Cooperative emission study in ytterbium-doped Y2SiO5

Ytterbium ions infrared and visible cooperative luminescences, resulting from YAG laser and selective site excitations, in (6%) Yb-doped Y₂SiO₅ thin film are analyzed. Magnetically coupled Yb-Yb ion pairs seem to play a major role in energy transfer and cooperative emission, confirming the prevalence of superexchange mechanisms.     

Photoconductivity in the ordered vacancy compound CuIn5Se8

Thin films of the ordered vacancy compound CuIn₅Se₈ are deposited on glass substrates by multisource co-evaporation method and photoconductivity measurements are done on the films at various temperatures from 10 up to 300 K. The two photoactive bands that are identified in the spectral response spectra of CuIn₅Se₈ thin films at all measured temperatures are attributed to photoactive transitions between acceptor V_Cu to donor In_Cu and valence band to conduction band transitions respectively. From the spectra, a shift in band-to-band gap from 1.36 to 1.3 eV is observed with a temperature variation from 10 to 300 K. The non-exponential long-term decay observed in the transient photoconductivity spectra suggests a deep level trap-emptying process to be associated with the decay process and the decay constants are calculated by the differential life-time concept. From the steady state photocurrent analysis, a reduction in intergrain potential barrier on illumination has been noted as one reason for increase in conductivity on illumination. X-ray photoelectron spectroscopy analysis has been done to determine the binding energies of Cu, In and Se in the compound.     

Laser-excited spectra of Lu2SiO5:Ce scintillator

The emission spectra of Lu₂SiO₅:Ce single crystal under the excitation of 266 nm laser were investigated. The emission spectra of LSO single crystal show no temperature quenching from 20 to 300 K, under the excitation of 266 nm laser with 2 mJ pulse energy. With rising temperature, the Ce1 emission is slightly decreased, while the Ce2 emission is slightly increased. These results show the emissions of Ce1 and Ce2 is not only dependent on the concentration ratio but also influenced by the possible energy transfer processes, including Ce1 to Ce2, intrinsic STHs to Ce2 and the phonon-assisted transfer processes. The spectral thermal broadening and the spectral overlap become evident at high temperature, leading to the enhancement of energy transfer. When the excitation power lowers, the ratio of Ce1 and Ce2 emission increases, and is close to the Xe lamp ultraviolet (UV) excitation, suggesting that the energy transfer from Ce1 center to Ce2 center may be also dependent on the excitation power.     

Photoluminescence properties of the ZnO-CdO-TeO2 system doped with the Tband Yb ions

ZnO-CdO-TeO₂ was employed as a host of Tb³⁺ and Yb³⁺ ions. The matrix doped with Tb³⁺ presents a crystalline/amorphous structure, while the same matrix shows an amorphous structure when it is doped with Yb³⁺. Optical absorption spectra, measured by using photoacoustic (PA) spectroscopy, allowed to determine the band gap, which is localized in the range 3.47-3.60 eV. Both kinds of ions Tb³⁺ and Yb³⁺ in the ZnO-CdO-TeO₂ matrix show emissions that are characteristic of such ions. For Tb³⁺ the signals were allocated in 548, 586, 622 nm, respectively, while for Yb³⁺ only one signal was registered at 1000 nm.     

On photoluminescence in HgGa2S4

In this paper, we investigate the kinetics of photoluminescence in excited crystals of HgGa₂S₄ which have recently been proposed for implementing tunable luminescent devices. From photoluminescence experiments, performed at various temperatures and excitation powers, it appears that two kinds of radiative recombination processes take place during crystal excitation. These originate two bands in emission spectra which were resolved by means of a fitting procedure. The dependencies of these bands on temperature and excitation power density are explained by means of a specific kinetic model. A broad band, peaking at about 1.8 eV, is ascribed to electron-hole tunnel recombinations occurring in associated donor-acceptor pairs, according to a Prener-Williams scheme. The second narrow band, peaking at about 2.3 eV, is ascribed to electron-hole recombinations occurring in centres presenting short () and long-life () excited states. At room temperature, owing to thermally activated relaxation from short- to long-life states, these centres saturate under relatively low excitation powers. The tunability of photoluminescence is a consequence of competition between monomolecular and bimolecular recombination processes.     

Photoluminescence investigations of Zn2SiO4 co-doped with Eu and Tb ions

Zinc silicate phosphors co-doped with Eu³⁺ ions and also with both Eu³⁺ and Tb³⁺ ions were prepared by high temperature solid state reaction in air or reducing atmosphere. The luminescence characteristics of the prepared phosphors were investigated. While in the samples prepared in air, Eu³⁺ emission was found to be dominant over Tb³⁺ emission, in the samples prepared in reducing atmosphere, intense Eu²⁺ emission at 448 nm was found to be predominant over narrow Tb³⁺ emission. Luminescence studies showed that Eu³⁺ ions occupy asymmetric sites in Zn₂SiO₄ lattice. The intense f-f absorption peak of Eu³⁺ at 395 nm observed in these phosphors suggests their potential as red emitting phosphors for near ultra-violet light emitting diodes.     

Raman scattering and optical absorption studies of an orbital ordered Ca2RuO4

We have reported the Raman scattering and infrared absorption results on a t_2g orbital ordered Ca₂RuO₄. At 10 K, a strong and clear peak was observed in Raman scattering near 1360 cm⁻¹ with x′x′ geometry. In contrast to optic phonon modes, the peak does not show any frequency shift but rapidly decreases with increasing temperature. In addition, the peak is not observed in infrared absorption measurement. By comparing the previous Raman scattering results for several transition metal oxides, we have discussed the possible origins and ambiguities of the intriguing peak in Ca₂RuO₄.     

Spectroscopic investigations of Nd-, Er-, Er/Yb-, and Tm-ions doped SiO2-Al2O3-CaF2-GdF3 glasses

This paper reports on the absorption, visible and near-infrared luminescence properties of Nd³⁺, Er³⁺, Er³⁺/2Yb³⁺, and Tm³⁺ doped oxyfluoride aluminosilicate glasses. From the measured absorption spectra, Judd-Ofelt (J-O) intensity parameters (Ω₂, Ω₄ and Ω₆) have been calculated for all the studied ions. Decay lifetime curves were measured for the visible emissions of Er³⁺ (558 nm, green), and Tm³⁺ (650 and 795 nm), respectively. The near infrared emission spectrum of Nd³⁺ doped glass has shown full width at half maximum (FWHM) around 45 nm (for the ⁴F_3/2→⁴I_9/2 transition), 45 nm (for the ⁴F_3/2→⁴I_11/2 transition), and 60 nm (for the ⁴F_3/2→⁴I_13/2 transition), respectively, with 800 nm laser diode (LD) excitation. For Er³⁺, and Er³⁺/2Yb³⁺ co-doped glasses, the characteristic near infrared emission bands were spectrally centered at 1532 and 1544 nm, respectively, with 980 nm laser diode excitation, exhibiting full width at half maximum around 50 and 90 nm for the erbium ⁴I_13/2→⁴I_15/2 transition. The measured maximum decay times of ⁴I_13/2→⁴I_15/2 transition (at wavelength 1532 and 1544 nm) are about 5.280 and 5.719 ms for 1Er³⁺ and 1Er³⁺/2Yb³⁺ (mol%) co-doped glasses, respectively. The maximum stimulated emission cross sections for ⁴I_13/2→⁴I_15/2 transition of Er³⁺ and Er³⁺/Yb³⁺ are 10.81×10⁻²¹ and 5.723×10^-21 cm². These glasses with better thermal stability, bright visible emissions and broad near-infrared emissions should have potential applications in broadly tunable laser sources, interesting optical luminescent materials and broadband optical amplification at low-loss telecommunication windows.     

Spectral analysis of Pr-, Sm- and Dy-doped transparent GeO2-BaO-TiO2 glass ceramics

In this paper, we present the photoluminescence properties of Pr³⁺-, Sm³⁺- and Dy³⁺-doped germanate glasses and glass ceramics. From the X-ray diffraction measurement, the host glass structure was determined. These glasses have shown strong absorption bands in the near-infrared (NIR) region. Compared to Pr³⁺-, Sm³⁺- and Dy³⁺-doped glasses, their respective glass ceramics have shown stronger emissions due to the Ba₂TiGe₂O₈ crystalline phase. For Pr³⁺-doped glass and glass ceramic, emission bands centered at 530 nm (³P₀→³H₅), 614 nm (³P₀→³H₆), 647 nm (³P₀→³F₂) and 686 nm (³P₀→³F₃) have been observed with 485 nm (³H₄→³P₀) excitation wavelength. Of them, 647 nm (³P₀→³F₂) has shown bright red emission. Emission bands of ⁴G_5/2→⁶H_5/2 (565 nm), ⁴G_5/2→⁶H_7/2 (602 nm) and ⁴G_5/2→⁶H_9/2 (648 nm) for the Sm³⁺:glass and glass ceramic, with excitation at ⁶H_5/2→⁴F_7/2 (405 nm) have been recorded. Of them, ⁴G_5/2→⁶H_7/2 (602 nm) has shown a bright orange emission. With regard to the Dy³⁺:glass and glass ceramic, a bright fluorescent yellow emission at 577 nm (⁴F_9/2→⁶H_13/2) has been observed, apart from ⁴F_9/2→⁶H_11/2 (667 nm) emission transition with an excitation at 454 nm (⁶H_15/2→⁴I_15/2) wavelength. The stimulated emission cross-sections of all the emission bands of Pr³⁺, Sm³⁺ and Dy³⁺:glasses and glass ceramics have been computed based on their measured full-width at half-maxima (FWHM, Δλ) and lifetimes (τ_m).     

Photoluminescence studies of red-emitting NaEu(WO4)2 as a near-UV or blue convertible phosphor

Sodium europium double tungstate [NaEu(WO₄)₂] phosphor was prepared by the solid-state reaction method. Its crystal structure, photoluminescence properties and thermal quenching characteristics were investigated aiming at the potential application in the field of white light-emitting diodes (LEDs). The influences of Sm doping on the photoluminescence properties of this phosphor were also studied. It is found that this phosphor can be effectively excited by 394 or 464 nm light, which nicely match the output wavelengths of near-ultraviolet (UV) or blue LED chips. Under 394 or 464 nm light excitation, this phosphor exhibits stronger emission intensity than the Y₂O₂S:Eu³⁺ or Eu²⁺-activated sulfide phosphor. The introduction of Sm³⁺ ions can broaden the excitation peaks at 394 and 464 nm of the NaEu(WO₄)₂ phosphor and significantly enhance its relative luminance under 400 and 460 nm LEDs excitation. Furthermore, the relative luminance of NaEu(WO₄)₂ phosphor shows a superior thermal stability compared with the commercially used sulfide or oxysulfide phosphor, and make it a promising red phosphor for solid-state lighting devices based on near-UV or blue LED chips.     

Mott-type hopping conduction in the ordered and disordered phases of LiCoO2

The temperature dependence of dc resistance was observed in the range of for layered-rock-salt (hexagonal structure, ordered distribution between Li and Co) and modified-spinel (cubic, random distribution) phases of LiCoO₂. The results suggest Mott-type hopping conduction arising from the localized Co-3d electrons in the valence band. The densities of states (DOS) at the Fermi energy (E_F) estimated from the slope of the resistance curves were 2.0×10²⁰ and 5.5×10¹⁹ cm⁻³ eV⁻¹ for the ordered and disordered phases, respectively. The relatively low DOS at E_F in the disordered phase suggests that E_F approaches the edge of the valence band as a result of the narrowing of Co-t_2g bands due to the higher lattice symmetry in the disordered phase.     

Electronic structure of HgGa2S4

The electronic structure and chemical bonding in HgGa₂S₄ crystals grown by vapor transport method are investigated with X-ray photoemission spectroscopy. The valence band of HgGa₂S₄ is found to be formed by splitted S 3p and Hg 6s states at binding energies BE=3-7 eV and the components at BE=7-11 eV generated by the hybridization of S 3s and Ga 4s states with a strong contribution from the Hg 5d states. At higher binding energies the emission lines related to the Hg 4f, Ga 3p, S 2p, S 2s, Hg 4d, Ga LMM, Ga 3p and S LMM states are analyzed in the photoemission spectrum. The measured core level binding energies are compared with those of HgS, GaS, AgGaS₂ and SrGa₂S₄ compounds. The valence band spectrum proves to be independent on the technological conditions of crystal growth. In contrast to the valence band spectrum, the distribution of electron states in the bandgap of HgGa₂S₄ crystals is found to be strongly dependent upon the technological conditions of crystal growth as demonstrated by the photoluminescence analysis.     

Structural and optical properties of a-Si1−xCx:H films synthesized by dc magnetron sputtering technique

Hydrogenated amorphous SiC films (a-Si_1−xC_x:H) were prepared by dc magnetron sputtering technique on p-type Si(1 0 0) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H-SiC). The deposited a-Si_1−xC_x:H film was realized under a mixture of argon and hydrogen gases. The a-Si_1−xC_x:H films have been investigated by scanning electronic microscopy equipped with an EDS system (SEM-EDS), X-ray diffraction (XRD), secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), UV-vis-IR spectrophotometry, and photoluminescence (PL). XRD results showed that the deposited film was amorphous with a structure as a-Si_0.80C_0.20:H corresponding to 20 at.% carbon. The photoluminescence response of the samples was observed in the visible range at room temperature with two peaks centred at 463 nm (2.68 eV) and 542 nm (2.29 eV). In addition, the dependence of photoluminescence behaviour on film thickness for a certain carbon composition in hydrogenated amorphous SiC films (a-Si_1−xC_x:H) has been investigated.     

Photoluminescence and Raman studies of Xe ion-implanted diamonds: Dependence on implantation dose

We report on photoluminescence and Raman studies of Xe ion-implanted diamond. Several natural and high-purity artificial diamonds implanted within the wide dose range of 10¹⁰-5×10¹⁴ ion/cm² were studied. The room temperature luminescence of the Xe center consists of two zero phonon lines, at 813 nm (strong) and 794 nm (weak). The dose dependences of photoluminescence and Raman spectra were studied. For doses less than 10¹³ ion/cm², the luminescence intensity grows with the implantation dose linearly. The defect-induced photoluminescence quenching was observed for doses equal or more than 10¹³ ion/cm². Possible models of the Xe center will be discussed. The nature of damages induced by ion implantation at different doses was analyzed using micro-Raman spectroscopy.     

Influence of co-doping different rare earth ions on CaGa2S4: Eu, RE(RE=Ln) phosphors

Photoluminescent phosphors CaGa₂S₄: Eu²⁺, RE³⁺ (RE³⁺ including all rare earth ions except for Sc³⁺, Pm³⁺, Eu³⁺ and Lu³⁺) were prepared by sintering at high temperature in a reductive atmosphere, and their luminescent properties were studied intensively. The influences of co-doping rare earth ions on their luminescent properties were also investigated. No remarkable differences were found from excitation spectra of co-doped phosphors CaGa₂S₄: Eu²⁺, RE³⁺ in contrast with that of phosphor CaGa₂S₄: Eu²⁺, but there were a few differences in emission spectra of Ce³⁺, Pr³⁺ or Ho³⁺ co-doped phosphors. Phosphors CaGa₂S₄: Eu²⁺, RE³⁺ (RE=Ce, Pr, Gd, Tb, Ho and Y) had persistent afterglow, and very short afterglow was shown for Nd³⁺ or Er³⁺ co-doped phosphors, but no long afterglow appeared when auxiliary activator was La³⁺, Sm³⁺, Dy³⁺, Tm³⁺ or Yb³⁺. Among the phosphors with long-lasting phosphorescence, in our experiments, CaGa₂S₄: Eu²⁺, Ho³⁺ had the longest and the highest brightness long yellow afterglow. Thermo-luminescence of all co-doped phosphors was measured to find the answer of different influences from different rare earth auxiliary activators.     

Photoluminescence at room temperature in polycrystalline BaxSr1−xTiO3 ceramics obtained by solid-state reaction method

Stoichiometric Ba_xSr_1−xTiO₃ ceramics (x=0.7, 0.8, and 0.9) have been prepared by solid-state reaction method. It has been observed in our experiments that the photoluminescence (PL) spectra in such samples at room temperature were centered around 800 nm; the results have been found to differ from observations in current literature. An explanation of this phenomenon was given, and the origin of such photoluminescence is ascribed to certain defects existing in these compounds, such as oxygen vacancies.     

Preparation and spectroscopic properties of Nb2O5 nanorods

Nb₂O₅ nanorods have been prepared using water/ethanol media. The samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-visible absorption and photoluminescence spectroscopy. The as-prepared Nb₂O₅ nanorods appeared to be single pseudohexagonal (TT-Nb₂O₅) phase. From the photoluminescence spectrum, two emission bands at 407 and 496 nm, respectively, were observed. The origin of the luminescence was discussed in detail.     

Structure and optical properties of films of the ternary compound CuGa5Se8

We have used a laser deposition method to obtain films of the ternary compound CuGa₅Se₈. We have studied their composition and structure. We have established that both the crystals and the films of the indicated compound crystallize in a defect-containing chalcopyrite structure. We have determined the energy and nature of the optical transitions from the transmission spectra in the region of the intrinsic absorption edge. We have calculated the valence-band crystal-field (Δ_CF) and spin–orbit (Δ_SO) splitting energies according to Hopfield’s quasicubic model for the ternary compound CuGa5Se8.