Crystallization kinetics in new Sb14As29Se52Te5 amorphous glass

Differential scanning calorimetry (DSC) under non-isothermal conditions is used to study the crystallization kinetics of Sb₁₄As₂₉Se₅₂Te₅ chalcogenide glass. In addition, two approaches are used to analyze the dependence of glass transition temperature (T_g) on the heating rate (α). One is empirical linear relationship between (T_g) and ln(α). The second approach is the use of straight line vs. 1/T_g for the evaluation of the activation energy for glass transition. The phases at which the alloy crystallizes after the thermal treatment have been identified by using X-ray diffraction. The diffractogram of the transformed material shows the presence of some crystallites of As, Te, AsSb, As₂Se₃, Sb₂Se₃ and AsSe_.5Te_.5 in the residual amorphous matrix.     

Effect of heat treatment on the optical and electrical transport properties of Ge15Sb10Se75 and Ge25Sb10Se65 thin films

The effect of heat treatment on the optical and electrical properties of Ge₁₅Sb₁₀Se₇₅ and Ge₂₅Sb₁₀Se₆₅ thin films in the range of annealing temperature 373-723 K has been investigated. Analysis of the optical absorption data indicates that Tauc's relation for the allowed non-direct transition successfully describes the optical processes in these films. The optical band gap (E_g^opt.) as well as the activation energy for the electrical conduction (ΔE) increase with the increase of annealing temperature (T_a) up to the glass transition temperature (T_g). Then a remarkable decrease in both the E_g^opt. and ΔE values occurred with a further increase of the annealing temperature (T_a>T_g). The obtained results were explained in terms of the Mott and Davis model for amorphous materials and amorphous to crystalline structure transformations. Furthermore, the deduced value of E_g^opt. for the Ge₂₅Sb₁₀Se₆₅ thin film is higher than that observed for the Ge₁₅Sb₁₀Se₇₅ thin film. This behavior was discussed on the basis of the chemical ordered network model (CONM) and the average value for the overall mean bond energy 〈E〉 of the amorphous system Ge_xSb₁₀Se_90−x with x=15 and 25 at%. The annealing process at T_a>T_g results in the formation of some crystalline phases GeSe, GeSe₂ and Sb₂Se₃ as revealed in XRD patterns, which confirms our discussion of the obtained results.     

Glass formation in the As2Se3-As2Te3-Sb2Te3 system

Chalcogenide glasses from the As₂Se₃-As₂Te₃-Sb₂Te₃ system were synthesized for the first time. The glass-forming region was determined by X-ray diffraction and electron microscopic analyses.The basic physicochemical parameters such as density (d), microhardness (HV) and temperatures of phase transformations (glass transition T_g, crystallization T_cr and melting T_m) were measured. Compactness and some thermomechanical characteristics such as volume (V_h) and formation energy (E_h) of micro-voids in the glassy network as well as the elasticity module (E) were calculated. The glass-forming ability was evaluated according to Hruby's criteria (K_G). The correlation between composition and properties of the (As₂Se₃)_x(As₂Te₃)_y(Sb₂Te₃)_z glasses was established and comprehensively discussed.     

Kinetic study of non-isothermal crystallization of BixSe100−x chalcogenide glasses

Results of differential thermal analysis (DTA) under non-isothermal conditions on four glasses of Bi_xSe_100−x (x=5, 10, 15 and 25 at%) are reported and discussed. The glass transition temperatures (T_g), the onset crystallization temperatures (T_c) and the peak temperatures of crystallization (T_p) were found to be dependent on the compositions and the heating rates. From the dependence on the heating rates of (T_g) and (T_p), the activation energy for glass transition, E_g, and the activation energy for crystallization, E_c, are calculated and their composition dependence is discussed. The crystalline phases resulting from DTA and scanning electron microscopy (SEM) have been identified using X-ray diffraction. According to the Avrami exponent (n), the results show a one-dimensional growth for the composition Bi₅Se₉₅ and two-dimensional growth for the compositions Bi₁₀Se₉₀, Bi₁₅Se₈₅ and Bi₂₅Se₇₅. The kinetic parameters determined have made it possible to discuss the glass-forming ability.     

Cluster glass magnetism in the phase-separated Nd2/3Ca1/3MnO3 perovskite

A detailed study of the low-temperature magnetic state and the relaxation in the phase-separated colossal magnetoresistance Nd_2/3Ca_1/3MnO₃ perovskite has been carried out. Clear experimental evidence of the cluster-glass magnetic behavior of this compound has been revealed. Well defined maxima in the in-phase linear ac susceptibility χ′(T) were observed, indicative of the magnetic glass transition at T_g∼60 K. Strongly divergent zero-field-cooled and field-cooled static magnetizations and frequency dependent ac susceptibility are evident of the glassy-like magnetic state of the compound at low temperatures. The frequency dependence of the cusp temperature T_max of the χ′(T) susceptibility was found to follow the critical slowing down mechanism. The Cole–Cole analysis of the dynamic susceptibility at low temperature has shown extremely broad distribution of relaxation times, indicating that spins are frozen at “macroscopic” time scale. Slow relaxation in the zero-field-cooled magnetization has been experimentally revealed. The obtained results do not agree with a canonical spin-glass state and indicate a cluster glass magnetic state of the compound below T_g, associated with its antiferromagnetic–ferromagnetic nano-phase segregated state. It was found that the relaxation mechanisms below the cluster glass freezing temperature T_g and above it are strongly different. Magnetic field up to about μ₀H∼0.4 T suppresses the glassy magnetic state of the compound.     

New chalcogenide glasses in the Ag2Te-As2Se3-CdTe system

Chalcogenide glasses from the Ag₂Te-As₂Se₃-CdTe system were synthesized. The basic physicochemical parameters such as density (d), microhardness (HV) and the temperatures of phase transformations (the glass transition T_g, crystallization T_cr and melting T_m) were measured. Compactness and some thermomechanical characteristics such as volume (V_h) and formation energy (E_h) of micro-voids in the glassy network, as well as the module of elasticity E were calculated. The overall mean bond energy 〈E〉, the mean coordination number Z, the mean bond energy of the average cross-linking/atom and the average bond energy per atom of the “remaining matrix”— and , as well as the average heteropolar bond energy E_hb, the degree of “cross-linking/atom” P_p and the radial bond strength were determined.The correlation between the composition and properties of the Ag₂Te-As₂Se₃-CdTe glasses was established and comprehensively discussed.     

Observation of phase separation in some Se-Te-Sn chalcogenide glasses

Differential scanning calorimeter (DSC) and X-ray diffraction (XRD) techniques were employed here to investigate the glass transition behavior and crystallization kinetics of Se_80−x Te₂₀Sn_x (x=0.0, 2.5 and 5) alloys, which were prepared by the conventional melt quenching method. Two exothermic peaks have been observed in the DSC scans for the samples that contain Sn. Three crystalline phases (Se_7.68Te_0.32, SnSe and SnTe) were classified after heat treating the Se_77.5 Te₂₀Sn_2.5 glass at temperature corresponding to the second crystallization peaks for 3 h. All the characteristic temperatures such as glass transition temperature (T_g), crystallization temperature (T_c) and crystallization peak temperatures (T_p) were found to depend on both the heating rate and the composition. This dependence has been used to deduce the activation energy of the glass transition (E_g), the activation energy of crystallization (E_c), the Avrami exponent (n), thermal stability and the fragility index (F_i).     

Thermal characterization of Se85−xSb15Snx (10≤x≤13) chalcogenide glasses

Results of crystallization kinetics, viscosity, specific heat, thermal stability, and glass forming ability of Se_85−xSb₁₅Sn_x (x=10, 11, 12.5, and 13) chalcogenide glasses, using differential scanning calorimeter (DSC), under non-isothermal condition have been reported and discussed. The variation of the peak temperature of crystallization T_p with the heating rate β has been used to investigate the growth kinetics using Kissinger, Takhor, and Augis-Bennet models. The activation energy of crystallization E_c has been found to increase with Sn content and the crystal growth occurs in one dimension. The increasing trend of E_c is interpreted in terms of enhancement of the degree of cross-linking due to the formation of SnSe_4/2 structural units of energies higher than that of Se-Se and Se-Sb bond energies. The viscosity η against 1/T curves has also been drawn and indicated that the atoms of ternary Se-Sb-Sn glasses required more energy, with the addition of Sn, to complete the transformation from amorphous to crystalline state. The demand for thermal stability has been ensured through the calculations of the enthalpy released ΔH_c during the crystallization process and S-parameter, while the obtained values of the reduced glass transition temperature T_rg and Hurby number H_R have been used to estimate the glass forming ability (GFA). Results reveal that, both thermal stability and GFA enhanced with increasing Sn content and the studied samples were prepared from strong glass-forming liquids. The obtained values for the specific heat difference ΔC_p, between the equilibrium liquid and the glass, have been found to decrease with increasing Sn content and are in support of the results of thermal stability and GFA.     

Relaxation Behaviors of Free Radicals From γ-Irradiated Black Pepper Using Pulsed EPR Spectroscopy

Using electron paramagnetic resonance (EPR) spectroscopy, we revealed the relaxation behaviors of free radicals in γ-irradiated black pepper. Upon γ-irradiation, typical doublet peaks were detected. Relaxation times (T ₁ and T ₂) were observed using pulsed EPR. We found that T ₁ and T ₂ values varied with the γ-irradiation dose levels and these values showed a dependence on the dose level of the γ-irradiation treatment.     

Anomalous X-ray scattering studies on superionic glassy (As2Se3)-(AgX) systems (X = halides)

Anomalous X-ray scattering experiments for glassy room-temperature superionic conductors (As₂Se₃)_0.4 (AgI)_0.6 and (As₂Se₃)_0.4(AgBr)_0.6 were performed close to the As, Se, Ag, and Br K edges using a third-generation synchrotron radiation facility, ESRF. The differential structure factors, Δ_iS(Q), were obtained from detailed analyses, indicating that Δ_AsS(Q) and Δ_SeS(Q) of both the glassy superionic semiconductors are similar to those of glassy As₂ Se₃ except the prepeak in Δ_SeS(Q). The Δ_AgS(Q) spectrum of (As₂Se₃)_0.4 (AgI)_0.6 looks molten salt-like. However, the Δ_Ag S(Q) of (As₂Se₃)_0.4(AgBr)_0.6 glass have quite different features from that of (As₂Se₃)_0.4 (AgI)_0.6 glass in the low Q range, and the Δ_BrS(Q) has even a pre-shoulder around 13 nm^? 1 unlike molten salts. In the differential pair distribution functions Δ_ig(r) obtained from the Fourier transforms of Δ_iS(Q), the first peaks of Δ_Asg(r) and Δ_Seg(r) show no correlation with those of Δ_Agg(r) and Δ_Brg(r), and vice versa. From these results, it can be concluded that a pseudo-binary mixture of the As₂Se₃ network matrix and AgX-related ionic conduction pathways is a good structural model for these superionic glasses. Differences between the AgBr- and AgI mixtures were found in the second-neighbor structures around the Ag atoms, which may reflect those in the crystal structures of the AgX salts.     

Radiation-induced physical ageing of the structure of an arsenic–selenide glass

The effect of γ-irradiation (Co⁶⁰ sources) on 20 years stored As₁₀Se₉₀ glass is studied using high-resolution X-ray photoelectron spectroscopy (XPS) technique. It is shown that high-energy irradiation treatment stimulates studied chalcogenide glasses (ChG) towards a more thermodynamically equilibrium state which cannot be attained when making glass by the conventional melt-quenching method.     

Switching phenomenon and optical properties of Se85Te10Bi5 films

Se₈₅Te₁₀Bi₅ films of different thicknesses ranging from 126 to 512 nm have been prepared. Energy-dispersive X-ray (EDX) spectroscopy technique showed that films are nearly stoichiometric. X-ray diffraction (XRD) measurements have showed that the Se₈₅Te₁₀Bi₅ films were amorphous. Electrical conduction activation energy (ΔE_σ) for the obtained films is found to be 0.662 eV independent of thickness in the investigated range. Investigation of the current voltage (I-V) characteristics in amorphous Se₈₅Te₁₀Bi₅ films reveals that it is typical for a memory switch. The switching voltage V_th increases with the increase of the thickness and decreases exponentially with temperature in the range from 298 to 383 K. The switching voltage activation energy (ε) calculated from the temperature dependence of V_th is found to be 0.325 eV. The switching phenomenon in amorphous Se₈₅Te₁₀Bi₅ films is explained according to an electrothermal model for the switching process. The optical constants, the refractive index (n) and the absorption index (k) have been determined from transmittance (T) and reflectance (R) of Se₈₅Te₁₀Bi₅ films. Allowed non-direct transitions with an optical energy gap (E_g^opt) of 1.33 eV have been obtained. ΔE_σ is almost half the obtained value of E_g^opt, which suggested band to band conduction as indicated by Davis and Mott.     

Structural relaxation and rigidity transition in aged and rejuvenated AsxSe100−x glasses

Differential scanning calorimetry (DSC) measurements were performed to investigate the kinetics of the structural relaxation in aged and unaged (rejuvenated) As_xSe_100−x glasses with 0≤x≤40. The activation energy of the glass transition (E_a) of the aged and rejuvenated glasses was determined from the variation of the glass transition temperature (T_g) with the heating rates (β). Significant effect of prolonged aging of the glasses on the values E_a was observed. Evidence of transition from floppy to rigid phase is presented. The observed significant physical aging in samples with composition x<40 indicates the absence of the intermediate phase. The compositional dependence of T_g for aged and rejuvenated data was analyzed using the stochastic agglomeration theory.     

Glass formation and properties of GeTe4-Ga2Te3-AgX (X = I/Br/Cl) far infrared transmitting chalcohalide glasses

A new family of Tellurium-based glasses GeTe₄-Ga₂Te₃-AgX (X = I/Br/Cl) has been investigated and the glass-forming region was determined. Properties measurements include XRD, DTA, vis-NIR, and IR transmission spectra. The amorphous nature of the glasses has been proved by X-ray diffraction. Among the three systems, the GeTe₄-Ga₂Te₃-AgI glass system shows superior glass-forming ability and thermal stability. The maximum value of ΔT (= T_x − T_g) lies at about 110 °C for the glass composition 60GeTe₄-2-20Ga₂Te₃-20AgI, while for 60GeTe₄-20Ga₂Te₃-20AgBr and 60GeTe₄-20Ga₂Te₃-20AgCl, the ΔT values are both only 88 °C. Most of the studied glasses have a wide optical transmission window from 1.8 to 25 μm.     

Study of PbO-SrO-TiO2-B2O3 glass and glass ceramics

The glasses with composition (50−X)PbO–XSrO-25TiO₂-25B₂O₃ (where X=0, 5, 10 and 15 mol%) were prepared using conventional quenching technique. The T_g, T_c, density and CTE of the glass samples were measured. The T_g observed to increase with increasing concentration of SrO, while the T_c first decreased and then increased. The glass samples were converted to glass ceramics by following two stage heat treatment schedule. The glass ceramic samples were characterized by XRD, SEM and dielectric measurements. The XRD results revealed the formation of ferroelectric lead titanate as a major crystalline phase in glass ceramics. Additional phases observed include Sr₂B₂O₅ and PbB₂O₄. The room temperature (RT) dielectric constant of glass and glass ceramics are in the range of 100–120 which is promising for capacitor application.     

Field-induced structural transition and the related magnetic entropy change in Ni43Mn43Co3Sn11 alloy

Magnetic properties and magnetic entropy change ΔS were investigated in Heusler alloy Ni₄₃Mn₄₃Co₃Sn₁₁. With decreasing temperature this alloy undergoes a martensitic structural transition at T_M=188 K. The incorporation of Co atoms enhances ferromagnetic exchange for parent phases. Austenitic phase with cubic structure shows strong ferromagnetic behaviors with Curie temperature T_C^A at 346 K, while martensitic phase shows weak ferromagnetic properties. An external magnetic field can shift T_M to a lower temperature at a rate of 4.4 K/T, and a field-induced structural transition from martensitic to austenitic state takes place at temperatures near but below T_M. As a result, a great magnetic entropy change with positive sign appears. The size of ΔS reaches 33 J/kg K under 5 T magnetic field. More important is that the ΔS displays a table-like peak under 5 T, which is favorable for Ericsson-type refrigerators.     

The magnetic field dependence of the structural transition temperature in La3S4 and La3Se4

The magnetic field dependence of the structural transition temperature T_m from the cubic to the tetragonal phase has been determined for single crystals of La₃S₄ and La₃Se₄. The observed field dependence of T_m can be accounted for by the band Jahn-Teller model of the coupling of an e_g-band to the shear mode of the cubic lattice without invoking any coupling to acoustic or optical phonons.     

An energetic criterion to compare the evolution of thermally-excited surface disturbances and nanoindentation-induced defects on thin polymer films

A criterion is developed to predict the resulting evolution process of the following surface defects on thin (17 nm) polystyrene (PS) films on silicon (Si): (i) nanoindentation-induced indents which grow after being heated above the glass transition temperature of PS, T_g, leading to dewetting; (ii) nanoindentation-induced indents which level at temperatures above the T_g, resulting in a flat polymer surface and (iii) indents which are formed and grow spontaneously by thermal treatment above the T_g (thermal film break up). The criterion is based on the concept of the excess surface energy, ΔF_γ, which was introduced in previous reports for cases (i) and (ii). Here, a similar energetic term is used which corresponds only to the effect of the depressions, ΔF_γ(D). The effect of the rims which surround the depressions in cases (i) and (ii) is not taken into account. Measurements of ΔF_γ(D), performed by atomic force microscopy, prior to any treatment above the T_g suggest that growing depressions (cases i and iii) correspond to ΔF_γ(D) > 1.5 × 10⁻¹⁶ J while for healing depressions (case ii) ΔF_γ(D) < 1.8 × 10⁻¹⁶ J. A critical region of ΔF_γ(D) exists from 1.5 × 10⁻¹⁶ J to 1.8 × 10⁻¹⁶ J. Depressions which correspond to this, rather short, region can either grow or heal.     

γ-Irradiation effects on the thermal and optical properties of undoped and eosin doped 70/30 (wt/wt%) PVA/glycogen films

Differential scanning calorimetry (DSC), thermogravimetry analysis (TGA), UV/visible spectra and colour detection of pristine and γ-irradiated undoped and eosin-doped 70/30 (wt/wt%) PVA/glycogen has been measured. The kinetic parameters such as the activation energy, entropy, enthalpy and free energy for all investigated samples were determined using Coats–Redfern relation. The shift of T_g position towards lower temperatures with increasing γ-doses reflect that the degradation process is the predominant one. The values of absorbance and optical parameters in UV/visible range for γ-irradiated blend sample doped with eosin showed no significant variation with increasing γ-doses. This reflects that the addition of eosin to 70/30 (wt/wt%) PVA/glycogen makes it more resistant to γ-radiolysis. The calculated colour parameters such as L¹, U¹, V¹, C¹, hue and Y_e were found to be dependent on addition of eosin and γ-irradiation.