Dielectric characteristics of cation deficient TbMnO3

Cation deficient polycrystalline Tb_1−xMnO₃ (x= 0.05, 0.10) and TbMn_1−yO₃ (y =0.05, 0.10) samples were fabricated by conventional solid-state reaction. The complex dielectric properties of the cation deficient TbMnO₃ were investigated as the function of temperature (77 K≤T≤350 K) and frequency (100 Hz≤ f≤ 200 kHz) separately. Compared to the parent TbMnO₃, the cation deficient TbMnO₃ samples exhibit not only high dielectric constant but also low dissipation factor. Nyquist plots of complex impedance show that the dielectric properties originate from two main relaxation sources, i.e. bulk contributions and grain boundary effects.     

Fabrication, characterization and photoelectrochemical properties of Fe2O3 modified TiO2 nanotube arrays

TiO₂ nanotube (NT) arrays modified by Fe₂O₃ with high sensibility in the visible spectrum were first prepared by annealing anodic titania NTs pre-loaded with Fe(OH)₃ which was uniformly clung to the titania NTs using sequential chemical bath deposition (S-CBD). The photoelectrochemical performances of the as-prepared composite nanotubes were determined by measuring the photo-generated currents and voltages under illumination of UV-vis light. The titania NTs modified by Fe₂O₃ showed higher photopotential and photocurrent values than those of unmodified titania NTs. The enhanced photoelectrochemical behaviors can be attributed to the modified Fe₂O₃ which increases the probability of charge-carrier separation and extends the range of the TiO₂ photoresponse from ultraviolet (UV) to visible region due to the low band gap of 2.2 eV of Fe₂O₃.     

Microwave dielectric properties of (1 − x)(Mg0.95Co0.05)TiO3–x(Na0.5La0.5)TiO3 ceramic system

The microstructures and the microwave dielectric properties of the (1 − x)(Mg_0.95Co_0.05)TiO₃–x(Na_0.5La_0.5)TiO₃ ceramic system were investigated. Two-phase system was confirmed by the XRD patterns and the EDX analysis. A co-existed second phase (Mg_0.95Co_0.05)Ti₂O₅ was also detected. The microwave dielectric properties are strongly related to the density and the matrix of the specimen. A new microwave dielectric material 0.88(Mg_0.95Co_0.05)TiO₃–0.12(Na_0.5La_0.5)TiO₃, possessing an excellent combination of dielectric properties: ε_r  22.36, Q × f  110,000 GHz (at 9 GHz), τ_f  2.9 ppm/°C), is proposed as a candidate dielectric for GPS patch antennas.     

Upconversion emission enhancement of TiO2 coated lanthanide-doped Y2O3 nanoparticles

To investigate the upconversion emission,this paper synthesizes Tm3+ and Yb3+ codoped Y2O3 nanoparticles,and then coats them with TiO2 shells for different coating times.The spectral results of TiO2 coated nanoparticles indicate that upconversion emission intensities have respectively been enhanced 3.2,5.4,and 2.2 times for coating times of 30,60 and 90 min at an excitation power density of 3.21×102 W.cm 2,in comparison with the emission intensity of non-coated nanoparticles.Therefore it can be concluded that the intense upconversion emission of Y2O3:Tm3+,Yb3+ nanoparticles can be achieved by coating the particle surfaces with a shell of specific thickness.     

Effect of TiO2/Al2O3 film coated diamond abrasive particles by sol-gel technique

The diamond abrasive particles were coated with the TiO₂/Al₂O₃ film by the sol-gel technique. Compared with the uncoated diamonds, the TiO₂/Al₂O₃ film was excellent material for the protection of the diamonds. The results showed that the incipient oxidation temperature of the TiO₂/Al₂O₃ film coated diamonds in air atmosphere was 775 °C, which was higher 175 °C than that of the uncoated diamonds. And the coated diamonds also had better the diamond's single particle compressive strength and the impact toughness than that of uncoated diamonds after sintering at 750 °C. For the vitrified bond grinding wheels, replacing the uncoated diamonds with the TiO₂/Al₂O₃ film coated diamonds, the volume expansion of the grinding wheels decreased from 6.2% to 3.4%, the porosity decreased from 35.7% to 25.7%, the hardness increased from 61.2H_RC to 66.5H_RC and the grinding ratio of the vitrified bond grinding wheels to carbide alloy (YG8) increased from 11.5 to 19.1.     

The electrical properties of dielectric stacks of SiO2 and Al2O3 prepared by atomic layer deposition method

We produced dielectric stacks composed of ALD SiO₂ and ALD Al₂O₃, such as SiO₂/Al₂O₃, Al₂O₃/SiO₂, and SiO₂/Al₂O₃/SiO₂, and measured the leakage currents through the stacks in comparison with those of the single oxide layers. SiO₂/Al₂O₃ shows lowest leakage current for negative bias region below 6.4 V, and Al₂O₃/SiO₂ showed highest current under negative biases below 4.5 V. Two distinct electron conduction regimes are observed for Al₂O₃ and SiO₂/Al₂O₃. Poole-Frenkel emission is dominant at the high-voltage regime for both dielectrics, whereas the direct tunneling through the dielectric is dominant at the low-voltage regime. The calculated transition voltage between two regimes for SiO₂ (6.5 nm)/Al₂O₃ (12.6 nm) is −6.4 V, which agrees well with the experimental observation (−6.1 V). For the same EOT of entire dielectric stack, the transition voltage between two regimes decreases with thinner SiO₂ layer.     

高温无铅BaTiO_3-(Bi_(1/2)Na_(1/2))TiO_3正温度系数电阻陶瓷阻抗和介电谱分析

采用固相反应法制备了Y2O3施主掺杂的92 mol%BaTiO3-8 mol%(Bi1/2Na1/2)TiO3(BBNT8)高温无铅正温度系数电阻(positive temperature coe?cient resistivity,PTCR)陶瓷.利用透射电镜观察材料的显微结构,发现陶瓷的显微结构主要包括晶粒和晶界两部分,观察不到明显的壳层结构.进一步利用交流阻抗谱研究了陶瓷的宏观电学性能,发现陶瓷的总电阻是晶粒和晶界两部分的贡献,而晶粒电阻很小,在居里温度以上变化不大,材料的PTCR效应主要是晶界部分的贡献.当温度高于居里温度时,随着温度的升高,晶界介电常数逐渐减小,导致势垒增加,晶界电阻增大,从而产生正温度系数效应.最后,通过测试材料的介电频谱特性,研究计算了陶瓷的室温电阻率.     

纤维状TiO2/Bi2O3光催化剂的制备及其光催化性能

以C₁₆H₃₆O₄Ti和Bi(NO₃)·5H₂O为原料,以棉花纤维为生物模板,合成了系列纤维状TiO₂/Bi₂O₃光催化剂．采用XRD、SEM、UV-Vis等测试技术对样品的相结构、形貌和吸光性能等进行了表征分析．结果表明,样品中的Bi₂O₃为单斜相和四方相共存的混晶,纤维长度达到毫米级,     

Deposition and characterization of binary Al2O3/SiO2 coating layers on the surfaces of rutile TiO2 and the pigmentary properties

Binary Al₂O₃/SiO₂-coated rutile TiO₂ composites were prepared by a liquid-phase deposition method starting from Na₂SiO₃·9H₂O and NaAlO₂. The chemical structure and morphology of binary Al₂O₃/SiO₂ coating layers were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, TG-DSC, Zeta potential, powder X-ray diffraction, and transmission electron microscopy techniques. Binary Al₂O₃/SiO₂ coating layers both in amorphous phase were formed at TiO₂ surfaces. The silica coating layers were anchored at TiO₂ surfaces via Si-O-Ti bonds and the alumina coating layers were probably anchored at the SiO₂-coated TiO₂ surfaces via Al-O-Si bonds. The formation of continuous and dense binary Al₂O₃/SiO₂ coating layers depended on the pH value of reaction solution and the alumina loading. The binary Al₂O₃/SiO₂-coated TiO₂ composites had a high dispersibility in water. The whiteness and brightness of the binary Al₂O₃/SiO₂-coated TiO₂ composites were higher than those of the naked rutile TiO₂ and the SiO₂-coated TiO₂ samples. The relative light scattering index was found to depend on the composition of coating layers.     

Preparation of NaYF4:,Er3+/TiO2 composite and up-conversion luminescence properties under visible light excitation

The up-conversion luminescence composite NaYF 4:Er 3+ /TiO 2 is prepared using the sol-gel method.The specimen has good crystallinity and two shapes,i.e.,viereck and round,while the sizes of viereck and round particles are both micron-sized.The TiO 2 has an anatase structure,while the NaYF 4 has a hexagonal phase,which can be hardly obtained through the common sol-gel method.Due to the big particle size and the high crystallinity of pure NaYF 4:Er 3+,the composite has a small specific surface area that is less than Degussa P25 TiO 2.The NaYF 4:Er 3+ /TiO 2 composite shows several emission peaks at 211,237,and 251 nm under the excitation of 388 nm,at 395 nm and 411 nm under the excitation of 500 nm,and at 467,481,492,and 508 nm under the excitation of 570 nm.     

Influence of Lu2O3 on electrical and microstructural properties of CaCu3Ti4O12 ceramics

In this work, the influence of Lu₂O₃ doped on the dielectric and electrical properties of CaCu₃Ti₄O₁₂ was reported. Lu₂O₃-doped CCTO was prepared by a conventional solid state technique using CuO, TiO₂, and CaCO₃ as starting materials. The samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM); dielectric measurements were measured in the 10² Hz–10⁷ Hz frequency range at room temperature; and the nonlinear behavior of all samples was measured. The doping of Lu₂O₃ resulted in an increase in the dielectric constant of CCTO, but decreased the stability of the frequency dependence. Increasing concentrations of Lu₂O₃ resulted in decreasing nonlinear coefficients.     

Structural, electrical and optical properties of TiO2 doped WO3 thin films

TiO₂ doped WO₃ thin films were deposited onto glass substrates and fluorine doped tin oxide (FTO) coated conducting glass substrates, maintained at 500 °C by pyrolytic decomposition of adequate precursor solution. Equimolar ammonium tungstate ((NH₄)₂WO₄) and titanyl acetyl acetonate (TiAcAc) solutions were mixed together at pH 9 in volume proportions and used as a precursor solution for the deposition of TiO₂ doped WO₃ thin films. Doping concentrations were varied between 4 and 38%. The effect of TiO₂ doping concentration on structural, electrical and optical properties of TiO₂ doped WO₃ thin films were studied. Values of room temperature electrical resistivity, thermoelectric power and band gap energy (E_g) were estimated. The films with 38% TiO₂ doping in WO₃ exhibited lowest resistivity, n-type electrical conductivity and improved electrochromic performance among all the samples. The values of thermoelectric power (TEP) were in the range of 23-56 μV/K and the direct band gap energy varied between 2.72 and 2.86 eV.     

Photoelectrocatalytic degradation of organic contaminants at Bi2O3/TiO2 nanotube array electrode

In the current work, TiO₂ nanotube array was prepared via electrochemical anode method. Then the Bi₂O₃ nanoparticles were deposited onto the TiO₂ nanotube array via dip-coating method from an amorphous complex precursor. The crystal structures were characterized via X-ray diffraction analysis. Their surface textures were observed via electron-scanning microscope. The prepared composite array electrode exhibited high photoelectrocatalytic activities towards degrading organic contaminants under visible light irradiation. High photoelectrocatalytic activities were also exhibited under UV light irradiation. The catalytic mechanism was discussed based on the analysis of electrochemical and degradation kinetics results. It is suggested a P (Bi₂O₃)-N (TiO₂) junction was formed to increase the catalytic activates. The stability of the electrode materials was confirmed finally.     

Influence of valence states and co-ordination of cobalt ions on dielectric properties of PbO-Bi2O3-As2O3:CoO glass system

The glasses of the composition (40−x) PbO-15Bi₂O₃-45As₂O₃-xCoO, with 0≤x≤0.6 mol% in the steps of 0.1 were synthesized. The dielectric properties viz., dielectric constant, loss and ac conductivity over moderately larger ranges of frequency and temperature were investigated. The results were analyzed with the aid of the data on optical absorption and IR spectra. The analysis indicated that there is an increase in the insulating strength of the glasses with increase in the concentration of CoO up to 0.4 mol%.     

Synthesis and photocatalytic oxidation of different organic dyes by using Mn2O3/TiO2 solid solution and visible light

Mn₂O₃/TiO₂ solid solution was prepared from two different oxides, manganese oxide (from KMnO₄ and ethanol) and TiO₂, these samples were characterized by BET, XRD, EDAX, SEM, FT-IR, ESR, XPS and UV–vis absorption spectroscopy. Photocatalytic activities of Mn₂O₃/TiO₂ powder was investigated by photooxidation of different dyes like Rhodamine B, thymol blue, methyl orange and Bromocresol green under visible light (300-W Xe lamp; λ > 420 nm). The results show that the alloy of TiO₂ with 1 mol% of Mn₂O₃ (MNT1) exhibit photocatalytic activity 3–5 times higher than that of P25 TiO₂ for oxidation of various dyes (RB, TB, MO and BG). The average particle size and crystallite size of MNT1 were found to be 100 nm and 12 nm measured from SEM and XRD, respectively. The EPR spectra of the Mn₂O₃/TiO₂ samples is a sharp five-line Mn(III) component centered on g_eff = 1.99.     

Effect of CaO-B2O3-SiO2 glass on the magnetic and dielectric properties of NiCuZn ferrites

NiCuZn ferrites with different contents of CaO-B₂O₃-SiO₂ glasses were synthesized by a conventional ceramic technology and sintered at 1050 °C. It was found that the addition of CaO-B₂O₃-SiO₂ influenced the magnetic and dielectric properties of the ferrites. The saturation magnetization increased at first and reached its maximum with the sample of 2 wt% CaO-B₂O₃-SiO₂, and then decreased. The initial permeability decreased with the content of CaO-B₂O₃-SiO₂ but the cut-off frequency increased. The quality factor decreased first and then increased; the maximum quality factor was obtained in the sample with 3 wt% CaO-B₂O₃-SiO₂. With increasing content of CaO-B₂O₃-SiO₂, the permittivity increased sharply. The possible reasons responsible for these changes are explained.     

Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric

La₂O₃ grown by atomic layer deposition (ALD) and thermally grown GeO₂ are used to establish effective electrical surface passivations on n-type (1 0 0)-Ge substrates for high-k ZrO₂ dielectrics, grown by ALD at 250 °C substrate temperature. The electrical characterization of MOS capacitors indicates an impact of the Ge-surface passivation on the interfacial trap density and the frequency dependent capacitance in the inversion regime. Lower interface trap densities can be obtained for GeO₂ based passivation even though a chemical decomposition of the oxidation states occur during the ALD of ZrO₂. As a consequence the formation of a ZrGeO_x compound inside the ZrO₂ matrix and a decline of the interfacial GeO₂ are observed. The La₂O₃ passivation provides a stable amorphous lanthanum germanate phase at the Ge interface but also traces of Zr germanate are indicated by X-ray-Photoelectron-Spectroscopy and Transmission-Electron-Microscopy.     

Structural, photochemical and photocatalytic properties of zirconium oxide doped TiO2 nanocrystallites

Composite photocatalysts composed of TiO₂ and ZrO₂ have been prepared via the sol-gel method. The as-prepared nanocomposites are characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-vis spectrometry and fluorescence emission spectra. The results shows that TiO₂/ZrO₂ nanocomposites are composed of mainly anatase titania and tetragonal ZrO₂. Incorporating TiO₂ particles with ZrO₂ plays an important role in promoting the formation of nanoparticles with an anatase structure and leads to decreased fluorescence emission intensity. Most of the TiO₂/ZrO₂ nanocomposites exhibited comparable photocatalytic activity compared with commercial TiO₂ for the degradation aqueous methyl orange (MO) under ultraviolet irradiation, while the composite with Zr/Ti mass ratio of 15.2% shows the highest photocatalytic performances. Furthermore, the as-prepared nanocomposites can be reused with little photocatalytic activity loss. Without any further treatment besides rinsing, the photocatalytic activity of TiO₂/ZrO₂ (15.2%) composites is still higher than after five-cycle utilization.     

Y掺杂Al2O3高k栅介质薄膜的制备及性能研究

利用射频反应共溅射方法制备了Y掺杂Al₂O₃电介质薄膜，用掠入射x射线衍射检测了薄膜的结构，用高分辨率扫描电子显微镜(HRSEM)、原子力显微镜(AFM)观察了薄膜断面和表面形貌，用高频C-V和变频C-V及J-V测量了样品的电学特性. 结果表明，Y的掺入使电介质薄膜的介电常数k有了很大提高(8.14—11.8)，并体现出了较好的介电特性. 分析认为：与氧具有较大电负性差的Y离子的加入，增大了薄膜中的金属—氧键(M—O)的强度；同时，Y的加入使Al₂O₃的结构和原子配位发生了改变，从而提高了离子极化对薄膜介电常数的贡献. 退火前后的XRD谱均显示薄膜为非晶态；HRSEM断面和AFM形貌像显示所制备的薄膜非常平整，能够满足器件要求. 关键词： 高k栅介质 掺杂氧化铝 射频反应溅射     

Improving microwave dielectric properties of La2.98/3Sr0.01(Mg0.5Sn0.5)O3 ceramics with CuO additive

The microwave dielectric properties of CuO-doped La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics were investigated with a view to their application in microwave devices. CuO-doped La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics were prepared by the conventional solid-state method. The X-ray diffraction patterns of CuO-doped La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics exhibited no significant variation of phase with sintering temperature. By adding 0.75 wt.% CuO, a dielectric constant of 20.07, a quality factor (Q × f) of 63,000 GHz, and a temperature coefficient of resonant frequency τ_f (−77.0 ppm/°C) were obtained when La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics were sintered at 1500 °C for 4 h.