The growth of ultrathin Au films on Ni{1 1 1}: A study with medium energy ion scattering

The initial growth of Au on Ni{1 1 1} is strongly influenced by the 15.7% difference in bulk lattice parameter between the two fcc metals. At 400 K, the first monolayer of Au grows on the Ni{1 1 1} surface as a (9 × 9) overlayer with 8 Au-Au spacings being equivalent to 9 Ni-Ni spacings. Umezawa et al. [Physical Review B 57 (1998) 8842; Surface Science 426 (1999) 225] reported that the growth of Au overlayers can occur either via a reverse (R)-mode (i.e., incorporating a stacking fault at the Au-Ni interface) or a normal (N)-mode—the relative proportion of each mode being strongly sensitive to growth temperature. Using the technique of medium energy ion scattering, we examine the growth of Au on Ni{1 1 1} at 400 K. We conclude that, at this deposition temperature, there is a preference for growth via the R-mode (74 ± 9%). In addition, we find that the Au overlayer has a considerably higher density than bulk Au being contracted isotropically by 3.1% in the {1 1 1} plane and also by ∼7% perpendicular to the {1 1 1} plane. We discuss possible explanations for our findings.     

A scanning tunnelling microscopy investigation of gold island formation from an octanethiol self-assembled monolayer on Au(1 1 1)

The release of gold atoms from an octanethiol monolayer on Au(1 1 1) and the subsequent formation of single-layer-high gold islands have been investigated using a scanning tunnelling microscope (STM) in air. When the bias voltage between the STM tip and the sample is above the threshold for water electrolysis, reactive desorption of the thiol molecules takes place leading to the release of gold adatoms. The number of released atoms has been evaluated as a function of exposure to the tip current under both positive and negative bias voltages. Tip-induced ripening of the gold islands, and more interestingly, tip-induced disintegration of small islands are observed.     

Methylthiolate-induced reconstruction of Ag(1 1 1): A medium energy ion scattering study

Medium energy ion scattering (MEIS), using 100 keV H⁺ incident ions, has been used to investigate the structure of the Ag(1 1 1)(√7 × √7)R19° -CH₃S surface phase. The results provide the first direct evidence that this structure does involve substantial reconstruction of the Ag surface layer. The measured absolute scattered ion yields and blocking curves are in generally good agreement with a specific structural model of the surface based on a reconstructed layer containing 3/7 ML Ag atoms, previously suggested on the basis of scanning tunnelling microscopy (STM) and normal incidence X-ray standing wave (NIXSW) studies. However, the MEIS data indicate that any rumpling of the thiolate layer, is small, and probably ?0.2 Å. This value is smaller than the amplitude suggested in the STM and NIXSW studies, but could be entirely consistent with the earlier experimental data.     

Adsorption of PTCDI on Au(1 1 1): Photoemission and scanning tunnelling microscopy

The adsorption of perylene-3,4,9,10-tetracarboxylic-3,4,9,10-diimide (PTCDI) on Au(1 1 1) has been studied using synchrotron-based X-ray photoelectron spectroscopy and in situ scanning tunnelling microscopy. Direct topographic and surface coverage information provided by the scanning probe measurements have enabled us to correlate peaks in the relatively complex carbon core-level photoemission to interactions of the surface with different parts of the PTCDI molecule. A strong interaction between the imide ends of the molecule with the underlying gold substrate is evidenced by a large chemical shift in the imide carbon peaks, which is observed only for the first adsorbed layer.     

Scanning tunnelling microscopy and spectroscopy of the reduced TiO2(1 0 0) surface

Scanning tunnelling microscopy and current imaging tunnelling spectroscopy were used to study the topographic and electronic structure of a reduced TiO₂(1 0 0) surface. The STM results showed that the TiO₂(1 0 0) surface is capable to form (1 × 7) reconstruction which can transform to (1 × 3) reconstruction due to reoxidation of the surface. The CITS results showed that the (1 × 7) reconstruction is much more metallic in compared to the (1 × 3) reconstruction showing pronounced surface states at energy 1.3 eV and 0.8 eV below the Fermi level and at energy 1.0-1.2 eV above the Fermi level.     

Ultra-thin films and surface alloying of Pd on Cu(1 1 1) investigated by medium energy ion scattering

The structure of Pd films on Cu(1 1 1) and the alloying between the films and the substrate have been investigated by medium energy ion scattering (MEIS) using 100 keV H⁺ ions. Data are presented for the and alignments (nominal one- and three-layer alignments, respectively). It is found that beyond 1 ML the Pd grows in a twinned fcc structure, the incommensurate nature of which increases the visibility of the Cu(1 1 1) substrate to MEIS. Deposition of 0.2 ML of Pd produces a structure in which Pd mostly occupies the top two layers which have interlayer distances d₁₂ = 208 ± 4 pm and d₂₃ = 211 ± 4 pm. Some twinning is also present in this structure. Upon annealing 1.6 ML of Pd to 600 K for 1 min, the copper and palladium interdiffuse leaving around 0.4 ML of visible palladium. Energy plots show that there are several layers with an altered structure present over at least part of the surface. This may be due to large scale interdiffusion or alloy island formation. Incremental annealing to successively higher temperatures shows that the structural transformation begins around 500 K.     

Room and high-temperature scanning tunnelling microscopy and spectroscopy (HT-STM/STS) investigations of surface nanomodifications created on the TiO2(1 1 0) surface

High-temperature scanning tunnelling microscopy, scanning tunnelling spectroscopy and current imaging tunnelling spectroscopy (HT-STM/STS/CITS) were used to study the topographic and electronic structures changes due to surface modifications of the TiO₂(1 1 0) surface caused by the STM tip. In situ high-temperature STM results showed that the created modifications were stable even at elevated temperatures. The STS/CITS results showed the presence of energy gap below the Fermi level on the untreated regions. The disappearance of energy gap below the Fermi level on the modifications created by the tip was observed. It is assumed that the presence of the tip can change the chemical stoichiometry of the surface from TiO_2−x towards Ti₂O₃.     

Surface and subsurface oxide formation on Ni(1 0 0) and Ni(1 1 1)

The oxidation of Ni(1 0 0) and Ni(1 1 1) at elevated temperatures and large oxygen exposures, typical of the methods used in the preparation of NiO(1 0 0) films for surface studies, has been investigated by medium energy ion scattering (MEIS) using 100 keV H⁺ incident ions. Oxide film growth proceeds significantly faster on Ni(1 1 1) than on Ni(1 0 0), but on both surfaces oxide penetration occurs to depths significantly greater than 100 Å with total exposures of 1200 and 6000 L respectively. The metal/oxide interface is extremely rough, with metallic Ni extending to the surface, even for much thicker oxide films on Ni(1 1 1). On Ni(1 1 1), NiO growth occurs with the (1 0 0) face parallel to the Ni(1 1 1) surface and the close-packed 〈1 1 0〉 directions parallel. On Ni(1 0 0) the MEIS blocking curves cannot be reconciled with a single orientation of NiO(1 0 0) (with the 〈1 1 0〉 directions parallel) on the surface, but is consistent with the substantial orientational disorder (including tilt) previously identified by spot-profile analysis LEED.     

Sulfur-induced mobilization of Au surface atoms on Au(1 1 1) studied by real-time STM

The interaction of sulfur with gold surfaces has attracted considerable interest due to numerous technological applications such as the formation of self-assembled monolayers and as a chemical sensor. Here, we report on the interaction of sulfur with Au(1 1 1) at two different temperatures (300 K and 420 K) studied by real-time scanning tunnelling microscopy, low energy electron diffraction and Auger electron spectroscopy. In the low coverage regime (<0.1 ML), S adsorption lifts the herringbone reconstruction of the clean Au(1 1 1) surface indicating a lateral expansion of the surface layer. An ordered (√3 × √3)R30° sulfur adlayer develops as the coverage reaches ∼0.3 ML. At higher S coverages (>0.3 ML) gold surface atoms are removed from regular terrace sites and incorporated into a growing gold sulfide phase. At 300 K this process leads to the formation of a rough pit and mound surface morphology. This gold sulfide exhibits short-range order and an incommensurate, long-range ordered AuS phase develops upon annealing at 450-525 K. In contrast, formation of an ordered AuS phase via rapid step-retraction rather than etch pit formation is observed during S-interaction with Au(1 1 1) surfaces at 420 K. Our results shed new light on the S-Au(1 1 1) interaction.     

Phosphorus and hydrogen atoms on the (0 0 1) surface of silicon: A comparative scanning tunnelling microscopy study of surface species with a single dangling bond

We present a comparative scanning tunnelling microscopy (STM) study of two features on the Si(0 0 1) surface with a single dangling bond. One feature is the Si-P heterodimer—a single surface phosphorus atom substituted for one Si atom of a Si-Si dimer. The other feature is the Si-Si-H hemihydride—a single hydrogen atom adsorbed to one Si atom of a Si-Si dimer. Previous STM studies of both surface species have reported a nearly identical appearance in STM which has hampered an experimental distinction between them to date. Using voltage-dependent STM we are able to distinguish and identify both heterodimer and hemihydride on the Si(0 0 1) surface. This work is particularly relevant for the fabrication of atomic-scale Si:P devices by STM lithography on the hydrogen terminated Si(0 0 1):H surface, where it is important to monitor the distribution of single P dopants in the surface. Based on the experimental identification, we study the lateral P diffusion out of nanoscale reservoirs prepared by STM lithography.     

Study of c(2 × 2)-MnAu(0 0 1) layers on Mn(0 0 1) by means of scanning tunneling microscopy/spectroscopy

Intermixing, growth, geometric and electronic structures of gold films grown on antiferromagnetic stacking body-centered-tetragonal manganese (0 0 1) films were studied by means of scanning tunneling microscopy/spectroscopy at room temperature in ultra-high vacuum. We found stable ordered c(2 × 2)-MnAu(0 0 1) alloy layers after depositing Au on pure Mn layers. Since at the fourth layer (5 × 23)-like Au reconstruction appears instead of the c(2 × 2) structure and local density of states peaks obtained on the c(2 × 2)-MnAu surface disappear, pure Au layers likely grow from the fourth layer.     

A scanning tunneling microscopy study of PH3 adsorption on Si(1 1 1)-7 × 7 surfaces, P-segregation and thermal desorption

PH₃ adsorption on Si(1 1 1)-7 × 7 was studied after various exposures between 0.3 and 60 L at room temperature by means of scanning tunneling microscopy (STM). PH₃-, PH₂-, H-reacted, and unreacted adatoms can be identified by analyzing empty-state STM images at different sample biases. PH_x-reacted rest-atoms can be observed in empty-state STM images if neighboring adatoms are hydrogen terminated. Most of the PH₃ adsorbs dissociatively on the surface, generating H- and PH₂-adsorbed rest-atom and adatom sites. Dangling-bonds at rest-atom sites are more reactive than adatom sites and the faulted half of the 7 × 7 unit cell is more reactive than the unfaulted half. Center adatoms are overwhelmingly preferred over corner adatoms for PH₂ adsorption. The saturation P coverage is ∼0.18 ML. Annealing of PH₃-reacted 7 × 7 surfaces at 900 K generates disordered, partially P-covered surfaces, but dosing PH₃ at 900 K forms P/Si(1 1 1)- surfaces. Si deposition at 510 K leaves disordered clusters on the surface, which cannot be reordered by annealing up to 800 K. However, annealing above 900 K recreates P/Si(1 1 1)- surfaces. Surface morphologies formed by sequential rapid thermal annealing are also presented.     

Temperature- and coverage-dependent evolution of the Au/Pd(1 1 0) surface structure

The morphology and the atomic scale structure of thin gold films (up to 2.5 ML) on Pd(1 1 0) were studied by means of scanning tunneling microscopy and surface X-ray diffraction. At room temperature the films exhibit a multilayer growth mode accompanied by the formation of highly anisotropic islands. Annealing above 500 K significantly increases the smoothness of the gold films, which are in registry with the substrate. Above a critical threshold of two monolayers a (1 × 2) missing-row reconstructed film is found. This reconstructed surface is well ordered after annealing at temperatures above 580 K. The specific gold film morphology is envisaged as a way to relax the strain caused by the mismatch between gold and palladium.     

Self-regulated Ni cluster formation on the TiO2(1 1 0) terrace studied using scanning tunneling microscopy

We have studied the growth mode and morphology of Ni clusters on a TiO₂(1 1 0) surface with a wide terrace using scanning tunneling microscopy (STM) at a low coverage (less than 3 atoms nm⁻²). The Ni clusters are formed on the terrace at the low coverage of 0.2 atoms nm⁻². Their average dimensions are constant in three directions up to 1 atoms nm⁻². The Ni clusters have an oval shape with average sizes of 1.8 nm (along [0 0 1]) × 1.4 nm (along (in the [1 1 0] directions). Above the coverage of 1.0 atoms nm⁻², an increase in the cluster height occurs, retaining an almost constant lateral size. It is proposed that the interaction of the Ni cluster and the support surface regulates the Ni cluster size.     

Surface structure of the missing-row reconstruction of VC0.8(1 1 0): a scanning tunneling microscopy analysis

Scanning tunnelling microscopy (STM) was used to study the (1 1 0) surface of a VC_0.8 sample. The surface shows a missing-row reconstruction, i.e., a grating structure with ridges and valleys oriented along the [0 0 1] direction and (1 0 0) and (0 1 0) facets. We did not find unreconstructed (1 1 0) terraces. The regular spacing of the ridges corresponds to a periodicity of (3 × 1) or (4 × 1), depending on preparation, presumably related to different concentrations of carbon vacancies. In the STM images, we can also observe apparent pairing of atoms in the rows, leading to the larger c(6 × 2) and (4 × 2) superstructure cells, which also show up in LEED. We attribute these additional periodicities to ordering of carbon vacancies in the surface rows.     

Phase transition of thiophene molecules on Au(1 1 1) in solution

The orientation and packing arrangement of thiophene molecules on a well-defined Au(1 1 1) surface in 0.1 M HClO₄ solution have been investigated as a function of applied potentials by in situ scanning tunneling microscopy (STM) and electrochemical method. Thiophene molecules are found to form highly ordered adlayers in the double layer region. High-resolution STM images reveal different adlayer structures. Thiophene molecules take flat-lying and vertical orientation at 0.3 and 0.6 V, respectively. Compared with the results of electrochemical measurement, we concluded that the phase transition of thiophene on Au(1 1 1) occurs as the potential is changed between 0.1 and 0.65 V.     

In situ scanning tunneling microscopy studies of bimetallic cluster growth: Pt-Rh on TiO2(1 1 0)

The growth of Pt on clusters on TiO₂(1 1 0) in the presence and absence of Rh was investigated by scanning tunneling microscopy (STM) for Pt deposited on top of 0.3 ML Rh clusters (Rh + Pt). In situ STM studies of Pt growth at room temperature show that bimetallic clusters are produced when Pt is directly incorporated into existing Rh clusters or when newly nucleated clusters of pure Pt coalesce with existing Rh clusters. Low energy ion scattering experiments demonstrate that Rh is still present at the surface of the clusters even after deposition of 2 ML of Pt, indicating that Rh atoms can diffuse to the cluster surface at room temperature. Rh clusters were found to seed the growth of Pt clusters at room temperature as well as 100 K and 450 K. Furthermore, clusters as large as 100 atoms were observed to be mobile on the surface at room temperature and 450 K, but not at 100 K. Pt deposition at 100 K exhibited more two-dimensional cluster growth and higher cluster densities compared to room temperature experiments due to the lower diffusion rate. Increased diffusion rates at 450 K resulted in more three-dimensional cluster growth and lower densities for pure Pt growth, but cluster densities for Pt + Rh growth were the same as at room temperature.     

Faceting of nanoscale fingers on the (1 1 1) surface of gold

Gold fingers, one atomic layer (0.25 nm) high, 4-5 nm wide, and several hundred nm long are formed on the (1 1 1) surface of gold at room temperature by a combination of atomic manipulation and surface self-organisation. Each finger has two parallel edges (type A and type B, respectively) running along its length. The type A step is found to have higher step energy and become nanofaceted when disturbed by either thermal energy or the electric field under the STM tip, leading to the transformation of fingers to “nano-knives”. Our findings reveal the important role of step energy in the process of nanostructure fabrication on surfaces. The gold fingers also provide an ideal system for the investigation of meta-stable nanostructures.     

Scanning tunneling microscopy and spectroscopy of Mo clusters grown on TiO2(1 1 0)

Molybdenum was deposited in two steps (3 eq. ML and 1 eq. ML) on the light blue rutile TiO₂(1 1 0) (1 × 1) surface at room temperature, each Mo deposition cycle being followed by an annealing up to 950-1000 K. This procedure was found to lead to formation of separated clusters having a size in very wide range (1-20 nm). Scanning tunneling microscopy showed a dependence of the cluster morphology as a function of the size. The scanning tunneling spectra of Mo clusters was studied as a function of cluster dimensions and discussed in comparison with photoelectron spectroscopy results previously obtained for homogeneous Mo films. The dI/dV curves do not display the valence band structure of deposited material, which could be explained by the Schottky barrier formation.