CO2 adsorption on Cr(1 1 0) and Cr2O3(0 0 0 1)/Cr(1 1 0)

We attempt to correlate qualitatively the surface structure with the chemical activity for a metal surface, Cr(1 1 0), and one of its surface oxides, Cr₂O₃(0 0 0 1)/Cr(1 1 0). The kinetics and dynamics of CO₂ adsorption have been studied by low energy electron diffraction (LEED), Aug er electron spectroscopy (AES), and thermal desorption spectroscopy (TDS), as well as adsorption probability measurements conducted for impact energies of E_i = 0.1-1.1 eV and adsorption temperatures of T_s = 92-135 K. The Cr(1 1 0) surface is characterized by a square shaped LEED pattern, contamination free Cr AES, and a single dominant TDS peak (binding energy E_d = 33.3 kJ/mol, first order pre-exponential 1 × 10¹³ s⁻¹). The oxide exhibits a hexagonal shaped LEED pattern, Cr AES with an additional O-line, and two TDS peaks (E_d = 39.5 and 30.5 kJ/mol). The initial adsorption probability, S₀, is independent of T_s for both systems and decreases exponentially from 0.69 to 0.22 for Cr(1 1 0) with increasing E_i, with S₀ smaller by ∼0.15 for the surface oxide. The coverage dependence of the adsorption probability, S(Θ), at low E_i is approx. independent of coverage (Kisliuk-shape) and increases initially at large E_i with coverage (adsorbate-assisted adsorption). CO₂ physisorbs on both systems and the adsorption is non-activated and precursor mediated. Monte Carlo simulations (MCS) have been used to parameterize the beam scattering data. The coverage dependence of E_d has been obtained by means of a Redhead analysis of the TDS curves.     

Surface phase transition and electronic structure of c(5√2 × √2)R45°-Pb/Cu(1 0 0)

The c(5√2 × √2)R45°-Pb/Cu(1 0 0) surface phase is investigated by means of angle resolved ultraviolet photoemission and low energy electron diffraction in the temperature range between 300 and 550 K. We identify and characterize a temperature-induced surface phase transition at 440 K from the room temperature c(5√2 × √2) R45° phase to a (√2 × √2)R45° structure with split superstructure spots. The phase transition is fully reversible and takes place before the two-dimensional melting of the structure at 520 K. The electronic structure of the split (√2 × √2)R45° phase is characterized by a metallic free-electron like surface band. This surface band is backfolded with c(5√2 × √2)R45° periodicity phase at room temperature, giving rise to a surface band gap at the Fermi energy. We propose that a gain in electronic energy explains in part the stability of the c(5√2 × √2)R45° phase.     

Growth of In nanocrystallite arrays on the Si(1 0 0)-c(4 × 12)-Al surface

Using scanning tunneling microscopy, growth of In nanoisland arrays on the Si(1 0 0)-c(4 × 12)-Al surface has been studied for In coverage up to 1.1 ML and substrate temperature from room temperature to 150 °C. In comparison to the case of In deposition onto the clean Si(1 0 0) surface or Si(1 0 0)4 × 3-In reconstruction, the In growth mode is changed by the c(4 × 12)-Al reconstruction from the 2D growth to 3D growth, thus displaying a vivid example of the Volmer-Weber growth mode. Possible crystal structure of the grown In nanoislands is discussed.     

A density-functional study on the atomic geometry and adsorption of the Cu(1 0 0) c(2 × 2)/N Surface

In this work we have performed total-energy calculations on the geometric structure and adsorption properties of Cu(1 0 0) c(2 × 2)/N surface by using the density-functional theory and the projector-augmented wave method. It is concluded that nitrogen atom was adsorbed on a FFH site with a vertical distance of 0.2 Å towards from surface Cu layer. The bond length of the shortest Cu-N bonding is calculated to be 1.83 Å. Geometry optimization calculations exclude out the possibilities of adsorbate induced reconstruction mode suggested by Driver and Woodruff and the atop structural model. The calculated workfunction for this absorbate-adsorbent system is 4.63 eV which is quite close to that of a clean Cu(1 0 0) surface. The total-energy calculations showed that the average adsorption energy per nitrogen in the case of Cu(1 0 0) c(2 × 2)-N is about 4.88 eV with respect to an isolated N atom. The absorption of nitrogen on Cu(1 0 0) surface yields the hybridization between surface Cu atoms and N, and generates the localized surface states at −1.0 eV relative to Fermi energy E_F. The stretch mode of the adsorbed nitrogen at FFH site is about 30.8 meV. The present study provides a strong criterion to account for the local surface geometry in Cu(1 0 0) c(2 × 2)/N surface.     

Adsorption of iso-butane on ZnO(0 0 0 1)-Zn

Presented are thermal desorption spectroscopy (TDS) and adsorption probability measurements of iso-butane on the Zn-terminated surface of ZnO. The initial adsorption probability, S₀, decreases linearly from 0.57 to 0.22 (±0.02) with impact energy, E_i = 0.74-1.92 eV, and is independent of adsorption temperature, T_s = 91-114 K (±5 K), indicating non-activated molecular adsorption. The coverage, Θ, dependent adsorption probabilities, S(Θ), show a cross-over from adsorbate-assisted adsorption (S increases with Θ) to Kisliuk-like dynamics at about the desorption temperature of iso-butane bi-layers (∼110 K). Thus, the adsorption dynamics are precursor-mediated. The enhanced (gas-surface) mass-match, caused by forming a second layer of the alkane, leads to adsorbate-assisted adsorption. A direct fitting procedure of the TDS data yields a pre-exponential factor of 2.5 × 10¹³/s and a coverage dependent heat of adsorption of E_d(Θ) = 39 − 6 ∗ Θ + 2.5 ∗ exp(−Θ/0.07) kJ/mol.     

Early stages of vanadium deposition on Si(1 1 1)-7 × 7

We investigate the low-coverage regime of vanadium deposition on the Si(1 1 1)-7 × 7 surface using a combination of scanning tunnelling microscopy (STM) and density-functional theory (DFT) adsorption energy calculations. We theoretically identify the most stable structures in this system: (i) substitutional vanadium atoms at silicon adatom positions; (ii) interstitial vanadium atoms between silicon adatoms and rest atoms; and (iii) interstitial vanadium - silicon adatom vacancy complexes. STM images reveal two simple vanadium-related features near the Si adatom positions: bright spots at both polarities (BB) and dark spots for empty and bright spots for filled states (DB). We relate the BB spots to the interstitial structures and the DB spots to substitutional structures.     

D2 layers on MgO(0 0 1): Simulation study

In response to recent helium atom scattering (HAS) and neutron scattering results, Monte Carlo simulations and perturbation theory calculations have been performed for D₂ on MgO(0 0 1). Monte Carlo simulations predict that D₂ molecules form a series of interesting structures, p(2 × 2) → p(4 × 2) → p(6 × 2), with coverages Θ = 0.5, 0.75, 0.83 respectively, and followed by a formation of a top layer of p(6 × 2) unit cell symmetry. The three types of mono-layers are stable up to 13 K, whereas the top layer still exists up to 10 K. This is in partial agreement with the neutron scattering and HAS results that report c(2 × 2), c(4 × 2) and c(6 × 2); they agree in terms of coverage and stability, but disagree in terms of symmetry. A quantum mechanical examination of the D₂ molecules’ rotational motion shows the molecular axes are azimuthally delocalized and hence the simulated structures are c-type rather than p-type. These calculations also indicate that ortho-D₂ and helicoptering para-D₂ prefer cationic sites, while cartwheeling para-D₂ prefers anionic sites.     

Halogen chemisorption, the pairwise diffusion of I, and trapping by defects on Si(1 0 0)

Halogen molecules dissociatively chemisorb on Si(1 0 0)-(2 × 1), and the bonding structures that they adopt can be elucidated with scanning tunneling microscopy. Of the Cl, Br, and I group, Cl has the highest single atom diffusion barrier, and both single and paired adatoms are observed at 295 K. The barrier is smaller for Br, and the adatoms can interrogate the surface until they form pairs, which are then immobile, or are trapped at C-type defects. The barrier is smallest for I, allowing the formation of pairs and trapped states, but the pairs are mobile at ambient temperature. Their motion is thermally activated, the events are random, and the diffusivities along and across the dimer row are ∼0.42 and ∼0.17 Å²/s at 295 K. The respective energy barriers for pairwise diffusion are ∼0.76 and ∼0.82 eV, assuming an attempt frequency of 10¹² s⁻¹. Studies over long times reveal that pairwise diffusion at low coverage is ultimately quenched by the increasing density of C-type defects, i.e. the increasing amounts of dissociated H₂O.     

Atom geometry of nanostructured Fe films grown on c(2 × 2)-N/Cu(1 0 0) surface: An investigation by X-ray absorption spectroscopy with multishell analysis

We investigated the growth of Fe nanostructured films on c(2 × 2)-N/Cu(1 0 0) surface with Fe K-edge X-ray absorption fine structure (XAFS) in the near edge and in the extended energy region. The high photon flux of the incident X-rays allowed us to perform multishell analysis of the XAFS oscillations for Fe coverage Θ_Fe < 1 ML. This data analysis yields a detailed investigation of the atom geometry and some insights in the film morphology. At Θ_N < 0.5 ML (N saturation coverage) there is absence of contribution to XAFS from N atoms. First shell analysis of linearly polarized XAFS gives Fe-Fe (or Fe-Cu) bond length values varying between R₁ = 2.526 ± 0.006 Å at the highest Fe coverage (3 ML ) and R₁ = 2.58 ± 0.01 Å at Θ_Fe = 0.5 ML, Θ_N = 0.3 ML, with incidence angle Θ = 35°. These values are different from the case of bcc Fe (R = 2.48 Å), and compatible with fcc Fe (R₁ = 2.52 Å) and fcc Cu (R₁ = 2.55 Å). At the Fe lowest coverage (Θ_Fe = 0.5 ML) the dependence of R₁ on the incidence angle indicates expansion of the outmost layer. Near edge spectra and multishell analysis can be well reproduced by fcc geometry with high degree of static disorder. At N saturation pre-coverage (Θ_N = 0.5 ML) the XAFS analysis has to keep into account the Fe-N bonding. The results suggest two different adsorption sites: one with Fe in a fcc hollow site, surrounded by other metal atoms as nearest neighbours, and one resulting from an exchange with a Cu atom underneath the N layer.     

Coadsorption of CO and O on Ir(1 0 0): First principles calculations

Density functional theory (DFT) calculations with generalized gradient approximation (GGA) are performed to investigate the structural, electronic and energetic properties of Ir(1 0 0)-(mCO+nO), m=1, 2; n=1, 2 and 3, coadsorption systems. The stability of coadsorbed oxygen is not affected by the increase of CO coverage from 0.25 ML to 0.50 ML. However, the stability of CO increases by increasing O coverage from 0.25 ML to 0.50 ML and 0.75 ML as a result of the rumpling of the topmost Ir layer.     

Electrochemical scanning tunneling microscopy examination of the structures of benzenethiol molecules adsorbed on Au(1 0 0) and Pt(1 0 0) electrodes

In situ electrochemical scanning tunneling microscopy (STM) has been used to examine the structures of benzenethiol adlayers on Au(1 0 0) and Pt(1 0 0) electrodes in 0.1 M HClO₄, revealing the formation of well-ordered adlattices of Au(1 0 0)-(√2 × √5) between 0.2 and 0.9 V and Pt(1 0 0)-(√2 × √2)R45° between 0 and 0.5 V (versus reversible hydrogen electrode), respectively. The coverage of Au(1 0 0)-(√2 × √5) is 0.33, which is identical to those observed for upright alkanethiol admolecules on Au(1 1 1). In comparison, the coverage of Pt(1 0 0)-(√2 × √2)R45° - benzenethiol is 0.5, much higher than those of thiol molecules on gold surfaces. This result suggests that benzenethiol admolecules on Pt(1 0 0) could stand even more upright than those on Au(1 0 0). All benzenethiol admolecules were imaged by the STM as protrusions with equal corrugation heights, suggesting identical molecular registries on Au(1 0 0) and Pt(1 0 0) electrodes, respectively. Modulation of the potential of a benzenethiol-coated Au(1 0 0) electrode resulted in irreversible desorption of admolecules at E ? 0.1 V (vs. reversible hydrogen electrode) and oxidation of admolecules at E ? 0.9 V. In contrast, benzenethiol admolecule was not desorbed from Pt(1 0 0) at potentials as negative as the onset of hydrogen evolution. Raising the potential rendered deposition of more benzenethiol molecules before oxidation of admolecules commenced at E > 0.9 V.     

Global SO(3) × SO(3) × U(1) symmetry of the Hubbard model on bipartite lattices

In this paper the global symmetry of the Hubbard model on a bipartite lattice is found to be larger than SO(4). The model is one of the most studied many-particle quantum problems, yet except in one dimension it has no exact solution, so that there remain many open questions about its properties. Symmetry plays an important role in physics and often can be used to extract useful information on unsolved non-perturbative quantum problems. Specifically, here it is found that for on-site interaction U ≠ 0 the local SU(2) × SU(2) × U(1) gauge symmetry of the Hubbard model on a bipartite lattice with N_a^D sites and vanishing transfer integral t = 0 can be lifted to a global [SU(2) × SU(2) × U(1)]/Z₂² = SO(3) × SO(3) × U(1) symmetry in the presence of the kinetic-energy hopping term of the Hamiltonian with t > 0. (Examples of a bipartite lattice are the D-dimensional cubic lattices of lattice constant a and edge length L = N_aa for which D = 1, 2, 3,... in the number N_a^D of sites.) The generator of the new found hidden independent charge global U(1) symmetry, which is not related to the ordinary U(1) gauge subgroup of electromagnetism, is one half the rotated-electron number of singly occupied sites operator. Although addition of chemical-potential and magnetic-field operator terms to the model Hamiltonian lowers its symmetry, such terms commute with it. Therefore, its 4^N_aD energy eigenstates refer to representations of the new found global [SU(2) × SU(2) × U(1)]/Z₂² = SO(3) × SO(3) × U(1) symmetry. Consistently, we find that for the Hubbard model on a bipartite lattice the number of independent representations of the group SO(3) × SO(3) × U(1) equals the Hilbert-space dimension 4^N_aD. It is confirmed elsewhere that the new found symmetry has important physical consequences.     

Adsorption and reaction of methanethiol on the Ru(0 0 0 1)-p(2 × 2)O surface: A TPD and XPS study

Methanethiol adsorbed on Ru(0 0 0 1)-p(2 × 2)O has been studied by TPD and XPS. The dissociation of methanethiol to methylthiolate and hydrogen at 90 K is evidenced by the observation of hydroxyl and water. The saturation coverage of methylthiolate is ∼0.15 ML, measured by both XPS and TPD. A detailed analysis suggests that only the hcp-hollow sites have been occupied. Upon annealing the surface, water and hydroxyl desorb from the surface at ∼210 K. Methylthiolate decomposes to methyl radical and atomic sulphur via C-S cleavage between 350 and 450 K. Some methyl radicals (0.05 ML) have been transferred to Ru atoms before they decompose to carbon and hydrogen. The rest of methyl radicals desorb as gaseous phase. No evidence for the transfer of methyl radical to surface oxygen has been found.     

Electronic structure study of reconstructed Au-SiC(0 0 0 1) surfaces

A study of surface and interface properties of reconstructed Au-SiC(0 0 0 1) surfaces is reported. Two reconstructions were prepared on SiC(0 0 0 1), a √3 × √3R30° and a Si-rich 3 × 3, before Au deposition and subsequent annealing at different temperatures. For the Si-rich 3 × 3 surface the existence of three stable reconstructions 2√3 × 2√3R30°, 3 × 3 and 5 × 5 are revealed after deposition of Au layers, 4-8 Å thick, and annealing at progressively higher temperatures between 500 and 950 °C. For the 2√3 surface two surface shifted Si 2p components are revealed and the Au 4f spectra clearly indicate silicide formation. The variation in relative intensity for the different core level components with photon energy suggests formation of an ordered silicide layer with some excess Si on top. Similar core level spectra and variations in relative intensity with photon energy are obtained for the 3 × 3 and 5 × 5 phases but the amount of excess Si on top is observed to be smaller and an additional weak Si 2p component becomes discernable.For the √3 surface the evolution of the core level spectra after Au deposition and annealing is shown to be distinctly different than for the Si-rich 3 × 3 surface and only one stable reconstruction, a 3 × 3 phase, is observed at similar annealing temperatures.     

Comparative investigation of the c(2 × 2)-Si/Cu(0 1 1) and (√3 × √3)R30°-Cu2Si/Cu(1 1 1) surface alloys using DFT

The electronic structure of the c(2 × 2)-Si/Cu(0 1 1) surface alloy has been investigated and compared to the structures seen in the three phases of the (√3 × √3)R30°Cu₂Si/Cu(1 1 1) system, using LCAO-DFT. The weighted surface energy increase between the alloyed Cu(0 1 1) and Cu(1 1 1) surfaces is 126.7 meV/Si atom. This increase in energy for the (0 1 1) system when compared to the (1 1 1) system is assigned to the transition from a hexagonal to a rectangular local bonding environment for the Si ion cores, with the hexagonal environment being energetically more favorable. The Si 3s state is shown to interact covalently with the Cu 4s and 4p states whereas the Si 3p state, and to a lesser extent the Si 3d state, forms a mixture of covalent and metallic bonds with the Cu states. The Cu 4s and 4p states are shown to be altered by approximately the same amount by both the removal of Cu ion cores and the inclusion of Si ion cores during the alloying of the Cu(0 1 1) surface. However, the Cu 3d states in the surface and second layers of the alloy are shown to be more significantly altered during the alloying process by the removal of Cu ion cores from the surface layer rather than by the addition of Si ion cores. This is compared to the behavior of the Cu 3d states in the surface and second layers of the each phase of the (√3 × √3)R30°-Cu₂Si/Cu(1 1 1) alloy and consequently the loss of Cu-Cu periodicity during alloying of the Cu(0 1 1) surface is conjectured as the driving force for changes to the Cu 3d states. The accompanying changes to the Cu 4s and 4p states in both the c(2 × 2)-Si/Cu(0 1 1) and (√3 × √3)R30°-Cu₂Si/Cu(1 1 1) alloys are quantified and compared. The study concludes with a brief quantitative study of changes in the bond order of the Cu-Cu bonds during alloying of both Cu(0 1 1) and Cu(1 1 1) surfaces.     

Spin-polarized scanning tunneling microscopy through an adsorbate layer: Sulfur-covered Fe/W(1 1 0)

Spin-polarized scanning tunneling microscopy and spectroscopy (SP-STM/STS) has been performed on clean and sulfur-covered three-dimensional Fe islands on W(1 1 0). Upon dosing with H₂S the island surface is covered with 1/3 ML S leading to a c(3 × 1) reconstruction. The characteristic magnetic vortex structure is observable before and after dosing, even though the electronic structure of the surface is modified as is shown by SP-STS.     

A perturbation theory study of H2 on LiF(0 0 1)

In response to recent helium atom scattering (HAS) results, Monte Carlo (MC) simulations and perturbation theory have been performed for H₂ on LiF(0 0 1). MC simulations predict that H₂ molecules form a series of structures, p(2 × 2), p(8 × 2), p(4 × 2) with coverages Θ = 0.5, 0.625 and 0.75, respectively, that are stable up to 8 K. This is in partial agreement with the HAS results that report c(2 × 2) and c(8 × 2) structures; they agree in terms of coverage and stability, but disagree in terms of symmetry. To reconcile the results of the simulations and experiments, the orientation of the adsorbed H₂ molecules was studied using perturbation theory. These calculations show that the adsorbed H₂ molecules are azimuthally delocalized and that the structures are c-type rather then p-type. The calculations also indicate that p-H₂ and helicoptering o-H₂ prefer cationic sites, while cartwheeling o-H₂ prefers anionic sites.     

Asymmetric adsorption-site of potassium atoms in the (3 × 2)-p2mg structure formed on Cu(0 0 1)

The adsorption of K atoms on Cu(0 0 1) has been studied by low-energy electron diffraction (LEED) at room temperature (RT) and 130 K. At RT, a (3 × 2)-p2mg LEED pattern with single-domain was observed at coverage of 0.33, whereas the orthogonal two-domain was found at 130 K. At 130 K, a c(4 × 2) pattern with orthogonal two-domain was observed at coverage 0.25. Both the (3 × 2)-p2mg and c(4 × 2) structures have been determined by a tensor LEED analysis. It is demonstrated that K atoms are adsorbed on surface fourfold hollow sites in the c(4 × 2), while in the (3 × 2) structure two K atoms in the unit cell are located at an asymmetric site with a glide-reflection-symmetry. The asymmetric site is at near the midpoint between the exact hollow site and bridge-site but slightly close to the hollow site. A rumpling of 0.07 Å in the first Cu layer was confirmed, which might stabilize K atoms at the asymmetric site. Surface structures appearing in a coverage range 0.25-0.33 are discussed in terms of the occupation of the asymmetric site with increase of coverage.     

Coverage effects on phenol adsorption on Si(1 0 0)2 × 1 as: A first principle calculation

We investigated the adsorption of a 6-dimers Si(1 0 0)2 × 1 surface as a function of coverage and adsorption type (molecular/dissociative) by first principle calculations. In particular, we performed calculations on models with 2, 3, 4 and 6 phenol molecules, corresponding to coverage Θ = 0.34, 0.5, 0.67 and 1. We found that total adsorption energy, when at least one phenol is in a molecular state is lower than the sum of the corresponding singly adsorbed molecules. The dissociative adsorption of multiple molecules, both in parallel and switched configuration is most favoured for a coverage Θ = 0.34 (2.6 eV per adsorbed molecule). This values decreases to 2.0 eV and remains constant till the coverage 1 is reached.The energy barrier for the molecular-to-dissociated transition of a phenol molecule, in presence of another dissociatively adsorbed molecule is ∼0.008 eV and it is similar to the value in case of single adsorption. Possible hydrogen displacements were also considered.     

Interdiffusion of adsorbed Pb and Bi on Cu(1 0 0)

The impingement and interdiffusion of adsorbed Pb and Bi layers spreading from separated 3D pure bulk sources on Cu(1 0 0) has been studied, at T = 513 K, by in situ scanning Auger microscopy. When the leading edges of the pure Pb and Bi diffusion profiles impinge, they both consist of low-coverage lattice gas surface alloyed phases. In these low-coverage phases, Pb displaces surface alloyed Bi and the point of intersection of the profiles drifts towards the Bi source. These features lead to the conclusion that Pb atoms are more strongly bound at surface alloyed sites in Cu(1 0 0) than Bi atoms. Once the total coverage (Pb + Bi) on the substrate reaches about one monolayer, Pb and Bi are dealloyed from the substrate, and the interdiffusion profiles become essentially symmetric. Pb and Bi mix in all proportions, with an interdiffusion coefficient of ∼10⁻¹³ m²/s. This is considerably smaller than the self-diffusion coefficients previously observed for pure Pb and Bi in their respective high-coverage phases, indicating that the mechanism of interdiffusion is different from that of self-diffusion. As interdiffusion proceeds, the point of intersection of the Pb and Bi profiles reverses its drift direction, leading to the conclusion that binding of Bi atoms to the Cu(1 0 0) substrate is stronger than that of Pb atoms in the highest-coverage surface dealloyed layers.