Growth morphology of ultra-thin Ni films on Pd(1 0 0)

A series of thin Ni films, with thicknesses between 0.2 ML to 13 ML, were deposited on a Pd(1 0 0) substrate (a = 3.89 Å) at room temperature (RT). The growth morphology was investigated using scanning tunneling microscopy (STM). STM images indicate the existence of three different growth modes as a function of increasing coverage. Up to 6.5 ML, the films grow pseudomorphically, consistent with a face-centered tetragonal (fct) structure. From 6.5 ML to 10.5 ML a new apparent interlayer distance of 1.0 ± 0.1 Å is established. The new structure is accompanied by the appearance of an arrangement of filaments on the top layer surface. These filaments are presumably related to a strain relief mechanism of the fct films. Finally above 10.5 ML the Ni films recover the face-centered cubic (fcc) lattice constants. The filaments evolve, as a function of coverage, to form a net-like structure over the whole surface.     

Quantum-well states in bilayers of Ag and Au on W(1 1 0)

sp-Like quantum-well states (QWS) in thin monocrystalline bilayer films of Ag and Au on W(1 1 0) and of single Ag films were studied by angle-resolved photoemission. We find that the propagation of the electronic states in the bilayer films along [1 1 1] depends on the energy relative to the band edge of Au metal at the L point of the Brillouin zone. In particular, QWS with binding energies less than this band-edge energy (1.1 eV) are strongly confined to the Ag layer, while for higher binding energies the QWS extend across the whole bilayer film. This clearly demonstrates the weakness of the potential barrier at the Ag/Au interface in the context of QWS formation at energies where electronic states exist in both metals.     

Growth and thermal evolution of submonolayer Pt films on Ru(0 0 0 1) studied by STM

The growth of submonolayer Pt on Ru(0 0 0 1) has been studied with scanning tunneling microscopy. We focus on the island evolution depending on Pt coverage θ_Pt, growth temperature T_G and post-growth annealing temperature T_A. Dendritic trigonal Pt islands with atomically rough borders are observed at room temperature and moderate deposition rates of about 5 × 10⁻⁴ ML/s. Two types of orientation, rotated by 180° and strongly influenced by minute amounts of oxygen are observed which is ascribed to nucleation starting at either hcp or fcc hollow sites. The preference for fcc sites changes to hcp in the presence of about one percent of oxygen. At lower growth temperatures Pt islands show a more fractal shape. Generally, atomically rough island borders smooth down at elevated growth temperatures higher than 300 K, or equivalent annealing temperatures. Dendritic Pt islands, for example, transform into compact, almost hexagonal islands, indicating similar step energies of A- and B-type of steps. Depending on the Pt coverage the thermal evolution differs somewhat: While regular islands on Ru(0 0 0 1) are formed at low coverages, vacancy islands are observed close to completion of the Pt layer.     

A route to continuous ultra-thin cerium oxide films on Cu(1 1 1)

The growth and morphology of ultra-thin CeO₂(1 1 1) films on a Cu(1 1 1) substrate were investigated by means of low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). The films were grown by physical vapor deposition of cerium in an oxygen atmosphere at different sample temperatures. The preparation procedure is based on a modification of a previous method suggested by Matolin and co-workers [1], involving growth at elevated temperature (520 K). Here, LEED shows good long range ordering with a “(1.5 × 1.5)” superstructure, but STM reveals a three-dimensional growth mode (Vollmer-Weber) with formation of a closed film only at larger thickness. Using a kinetically limited growth process by reactive deposition at low sample temperatures (100 K) and subsequent annealing, we show that closed layers of ceria with atomically flat terraces can be prepared even in the regime of ultra-thin films (1.5 ML). Closed and atomically flat ceria films of larger thickness (3 ML) are obtained by applying a multistep preparation procedure, in which successive ceria layers are homoepitaxially grown on this initial film. The resulting overlayers show strong similarities with the morphology of CeO₂(1 1 1) single crystal surfaces, suggesting the possibility to model bulk ceria by thin film systems.     

Self-regulated Ni cluster formation on the TiO2(1 1 0) terrace studied using scanning tunneling microscopy

We have studied the growth mode and morphology of Ni clusters on a TiO₂(1 1 0) surface with a wide terrace using scanning tunneling microscopy (STM) at a low coverage (less than 3 atoms nm⁻²). The Ni clusters are formed on the terrace at the low coverage of 0.2 atoms nm⁻². Their average dimensions are constant in three directions up to 1 atoms nm⁻². The Ni clusters have an oval shape with average sizes of 1.8 nm (along [0 0 1]) × 1.4 nm (along (in the [1 1 0] directions). Above the coverage of 1.0 atoms nm⁻², an increase in the cluster height occurs, retaining an almost constant lateral size. It is proposed that the interaction of the Ni cluster and the support surface regulates the Ni cluster size.     

Morphology of Ni ultrathin films on Mo(1 1 0) and W(1 0 0) studied by LEED and STM

The morphology of ultrathin Ni films on Mo(1 1 0) and W(1 0 0) has been studied by low-energy electron diffraction and scanning tunneling microscopy. Ni films grow pseudomorphically on Mo(1 1 0) at 300 K for a coverage of 0.15 ML. A (8 × 1) structure is found at 0.4 ML, which develops into a (7 × 1) structure by 0.8 ML. The film undergoes a structural change to fcc Ni(1 1 1) at 6 ML. The growth mode switches from layer-by-layer to Stranski-Krastanov between 4 ML and 6 ML. Annealing at around 850 K results in alloying of submonolayer films with the substrate, while for higher coverages the Ni agglomerates into nanowedge islands. Ni films grow pseudomorphically on W(1 0 0) up to a coverage of around 2 ML at 300 K, above which there is a structural change from bcc to hcp Ni with the epitaxial relationship . This is accompanied by the formation of orthogonal domains of uniaxial strain-relieving dislocations from the third layer of the film. For coverages up to 1 ML the growth proceeds by formation of two-dimensional islands, but shifts to three-dimensional growth by 2 ML with rectangular islands aligned along the 〈0 1 1〉 substrate directions. Annealing at around 550 K results in agglomeration of Ni into larger islands and increasing film roughness.     

Vibration-induced structures in scanning tunneling microscope light emission spectra of Ni(1 1 0)-streaky (1 × 2)-H

We have measured the scanning tunneling microscope (STM) light emission spectra of Ni(1 1 0)-streaky (1 × 2) surfaces. When the tip was fixed over atomic hydrogen adsorbed on the surfaces, two types of vibration-induced structure were observed in the STM light emission spectra. One is the periodic fine structures that were already reported in our previous paper [Y. Uehara, S. Ushioda, Phys. Rev. Lett. 92 (2004) 066102] and the other newly found in the present experiments is a stepwise structure that is located at the vibrational energy of hydrogen below the cutoff energy of the STM light emission. They are ascribed to different excitation mechanisms of the vibration in the STM light emission process; the periodic fine structures appear when the vibrating motion is directly excited by the electrons injected from the tip. Conversely, the stepwise structure is observed when it is excited by the electromagnetic fields confined in the tip-sample gap, i.e., by localized surface plasmons.     

Density functional theory investigation of CN on Cu(1 1 1), Ni(1 1 1) and Ni(1 0 0)

The adsorption of CN on Cu(1 1 1), Ni(1 1 1) and Ni(1 0 0) has been investigated using density functional theory (DFT). While experimental studies of CN on Cu(1 1 1) show the molecular axis to be essentially parallel to the surface, the normally-preferred DFT approach using the generalised gradient approximation (GGA) yields a lowest energy configuration with the C-N axis perpendicular to the surface, although calculations using the local density approximation (LDA) do indicate that the experimental geometry is energetically favoured. The same conclusions are found for CN on Ni(1 1 1); on both surfaces bonding through the N atom is always unfavourable, in contrast to some earlier published results of ab initio calculations for Ni(1 1 1)/CN and Ni(1 0 0)/CN. The different predictions of the GGA and LDA approaches may lie in subtly different relative energies of the CN 5σ and 1π orbitals, a situation somewhat similar to that for CO adsorbed on Pt(1 1 1) which has proved challenging for DFT calculations. On Ni(1 0 0) GGA calculations favour a lying-down species in a hollow site in a geometry rather similar to that found experimentally and in GGA calculations for CN on Ni(1 1 0).     

Electronic structures of the suboxide films formed on TiC(1 0 0) and ZrC(1 0 0) surfaces: Density functional theory studies

Density functional theory (DFT) calculations have been performed to elucidate the electronic structures of the TiO-like film on TiC(1 0 0) and the ZrO-like film on ZrC(1 0 0), which are assumed to be monolayers of suboxide films with (1 × 1) periodicity with respect to the substrate (1 0 0) surfaces. It was revealed that the electronic structures of both films were characterized by the existence of a band around 6 eV and a band around the Fermi level. The former and latter bands were mostly composed of O 2p and metal d orbitals, respectively, indicating the substantial ionic nature of the film. The calculated DOS well reproduced the previously obtained photoelectron spectra. From the inspection of the optimized structures, it was found that the both suboxide films have rippled structures; the metal and oxygen atoms are displaced vertically downward and upward, respectively, maintaining the (1 × 1) structures.     

C-Fe chains due to segregated carbon impurities on Fe(1 0 0)

Bulk carbon impurities segregate at the Fe(1 0 0) surface and, upon thermal annealing, can form metastable surface phases with local and long range order and peculiar electronic properties. We present a surface science study of C-segregated Fe(1 0 0) with scanning tunneling microscopy, angle resolved photoemission, and ab initio calculations of the surface structure and electron states. In particular the c(3√2 × √2) structure, observed for 0.67 atomic layers of C segregated at the iron surface, is found to be due to self-organized carbon stripes made of zig-zag chains. The strong hybridization between C and Fe was observed in ARPES spectra.     

Epitaxial growth of ultra-thin NiO films on Cu(1 1 1)

The very first stages of the growth of NiO on Cu(1 1 1) is examined on a microscopic scale. The paper focuses on the morphological and structural characterization of nanostructures formed in the 0-1 Å thickness range. Ultra-thin NiO films, obtained through evaporation of a Ni rod under an oxygen atmosphere were grown at 550 K. In the early stages of the growth the oxide film morphology shows 10-30 nm large, monolayer high, islands with a partial incorporation of metallic Ni in the first Cu(1 1 1) surface plane. The first layer is formed by an epitaxial atomic layer exhibiting a STM contrast similar to the one observed on adsorbed oxygen on Cu(1 1 0). A NiO cluster nucleation and coalescence mechanism is proposed in order to explain the formation of the second NiO layer. A α-Ni₂O₃ hexagonal phase, or a structural distortion of the NiO(1 1 1)()R30° structure could both explain the complex LEED patterns.     

Growth and morphology of Cobalt thin films on Pd(1 1 1)

We report on the growth of thin Co films on Pd(1 1 1) at three different temperatures 180 K, 300 K, and 550 K. The structure and morphology was determined by scanning tunneling microscopy and low energy electron diffraction. The growth mode was found to vary with temperature. For 180 K and 300 K, we observed a tendency to double layer growth for the initial layers while at elevated temperatures, the initial film grows in single layer. For most conditions, non-ideal three-dimensional growth was observed. Two-dimensional growth was only found for growth temperature of 550 K and coverages above 5 ML. Depending on temperature, the Co islands at low coverages exhibit three principally different shapes: dendritic at 180 K, hexagonal at 300 K and triangular at 550 K. For growth at 550 K and coverages above 5 ML, the islands changed to an irregular shape. This transition is most likely responsible for the transition to 2D growth. Further, the large strain is relaxed by the creation of a dislocation network with mixed fcc and hcp stacking. Depending on the temperature and coverage, a hexagonal or a triangular network was observed. Finally, we have investigated the effect of annealing Co films prepared at 180 K and 300 K. Heating to 490 K leads to coarsening and intermixing.     

The comparative study of two dimensional condensation of Xe and Kr physisorbed on Ag(1 1 1) and Ag(1 0 0)

Adsorption isobars of Xe and Kr on Ag(1 1 1) and Ag(1 0 0) were observed simultaneously by an extremely-low-current low energy electron diffraction and an ellipsometry in the temperature range between 60 K and 90 K and in the equilibrium pressure range between 8 × 10⁻⁶ Pa and 2 × 10⁻⁴ Pa. Two dimensional condensation of the first layer of Xe on Ag(1 1 1) occurred at the temperature 0.3 ± 0.1 K higher than that on Ag(1 0 0). In the case of Kr on Ag(1 1 1) and Ag(1 0 0), the temperature difference was 0.2 ± 0.1 K. This temperature difference was discussed on the assumption that it is caused by the repulsive interaction between the dipoles induced in rare gas atoms. We estimated the difference of the induced dipole moment μ: μ of Xe atom on Ag(1 0 0) is 6% larger than that on Ag(1 1 1) and μ of Kr atom on Ag(1 0 0) is 14% larger than that on Ag(1 1 1).     

Surface and subsurface oxide formation on Ni(1 0 0) and Ni(1 1 1)

The oxidation of Ni(1 0 0) and Ni(1 1 1) at elevated temperatures and large oxygen exposures, typical of the methods used in the preparation of NiO(1 0 0) films for surface studies, has been investigated by medium energy ion scattering (MEIS) using 100 keV H⁺ incident ions. Oxide film growth proceeds significantly faster on Ni(1 1 1) than on Ni(1 0 0), but on both surfaces oxide penetration occurs to depths significantly greater than 100 Å with total exposures of 1200 and 6000 L respectively. The metal/oxide interface is extremely rough, with metallic Ni extending to the surface, even for much thicker oxide films on Ni(1 1 1). On Ni(1 1 1), NiO growth occurs with the (1 0 0) face parallel to the Ni(1 1 1) surface and the close-packed 〈1 1 0〉 directions parallel. On Ni(1 0 0) the MEIS blocking curves cannot be reconciled with a single orientation of NiO(1 0 0) (with the 〈1 1 0〉 directions parallel) on the surface, but is consistent with the substantial orientational disorder (including tilt) previously identified by spot-profile analysis LEED.     

Angle-resolved and resonant photoemission study of the ZrO-like film on ZrC(1 0 0)

Angle-resolved photoemission spectroscopy (ARPES) and resonant photoemission spectroscopy (RPES) have been used to study the electronic structure of the ZrO-like film formed on a ZrC(1 0 0) surface. It is found that, in addition to the O 2p band observed at 6-8 eV, states exist at 0.15 and 0.75 eV around the point. ARPES measurements show that the states at 0.15 and 0.75 eV disperse towards the lower binding energy side and cross the Fermi level along the direction. RPES measurements show that the former state shows a resonant behavior characteristic of the intra-atomic Zr 4d resonance, suggesting that the state includes substantial contribution of Zr 4d orbitals. On the other hand, the latter state shows a resonant behavior similar to that of the O 2p state in ZrO. The resonance is thought to be caused through the inter-atomic deexcitation mechanism involving the emissions of O 2p electrons, and thus the latter state is ascribed to that mostly composed of the O 2p component.     

Electronic structure of 1 ML NTCDA/Ag(1 1 1) studied by photoemission spectroscopy

We performed high-resolution photoemission experiments at different photon energies to investigate the valence band structure of 1 ML of 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) on Ag(1 1 1). Besides the known occupied molecular orbitals HOMO and HOMO − 1 we observe a new state close to the Fermi level, which results from the interaction between NTCDA and the substrate, partially filling the lowest unoccupied orbital of the free molecule (LUMO) in the monolayer system. By tuning the photon energy through the carbon K-edge, a resonance like change of the spectral intensity at the HOMO and HOMO − 1 energies is clearly revealed, which we use for an assignment of the individual spectral features to a predominant localization either at the naphthalene core or the anhydride group.     

Formation of ordered arrays of Ag nanowires and nanodots on Si(5 5 7) surface

The ordered arrays of Ag nanowires and nanodots have been grown in ultra-high vacuum on the Si(5 5 7) surface containing regular steps of three bilayer height. Formation of Ag nanostructures have been studied by scanning tunneling microscopy, low energy electron diffraction and Auger electron spectroscopy at room temperature. It was shown that a sample exposure in the vacuum before Ag growth affects the shape of the forming Ag islands. This effect is caused by oxygen adsorption on the silicon surface from the residual atmosphere in the vacuum chamber. When Ag is deposited on the clean silicon surface the islands, overlapping several (1 1 1) neighboring terraces, form. The arrays of silver nanowires elongated along steps and silver nanodots, arranged in lines parallel to the steps, can be formed on the Si(5 5 7) surface depending on the amount of adsorbed oxygen.     

In situ STM study of nanosized Ru and Os islands spontaneously deposited on Pt(1 1 1) and Au(1 1 1) electrodes

We provide an overview of structure and reactivity of selected bimetallic single crystal electrodes obtained by the method of spontaneous deposition. The surfaces that are described and compared are the following: Au(1 1 1)/Ru, Pt(1 1 1)/Ru and Pt(1 1 1)/Os. Detailed morphological information is presented and the significance of this work in current and further study of nanoisland covered surfaces in the catalytic and spectroscopic perspective is highlighted. All surfaces were investigated by in situ STM and by electroanalytical techniques. The results confirm our previous data that nanosized Ru islands are formed with specific and distinctive structural features, and that the Ru growth pattern is different for Au(1 1 1) and Pt(1 1 1). For Au(1 1 1), Ru is preferentially deposited on steps, while a random and relatively sparse distribution of Ru islands is observed on terraces. In contrast, for Ru deposited on Pt(1 1 1), a homogeneous deposition over all the Pt(1 1 1) surface was found. Os is also deposited homogeneously, and at a much higher rate than Ru, and even within a single deposition it forms a large proportion of multilayer islands. On Au(1 1 1), the Ru islands on both steps and terraces reach the saturation coverage within a short deposition time, and the Ru islands grow to multilayer heights and assume hexagonal shapes. On Pt(1 1 1), the Ru saturation coverage is reached relatively fast, but when a single deposition is applied, Ru nanoislands of mainly monoatomic height are formed, with the Ru coverage not exceeding 0.2 ML. For Ru deposits on Pt(1 1 1), we demonstrate that larger and multilayer islands obtained in two consecutive depositions can be reduced in size--both in height and width--by oxidizing the Ru islands and then by reducing them back to a metallic state. A clear increase in the Ru island dispersion is then obtained. However, methanol oxidation chronoamperometry shows that the surface with such a higher dispersion is less active to methanol oxidation than the initial surface. A preliminary interpretation of this effect is provided. Finally, we studied CO stripping reaction on Pt(1 1 1)/Ru, Au(1 1 1)/Ru and on Pt(1 1 1)/Os. We relate CO oxidation differences observed between Pt(1 1 1)/Ru and Pt(1 1 1)/Os to the difference in the oxophilicity of the two admetals. In turn, the difference in the CO stripping reaction on Pt(1 1 1)/Ru and Au(1 1 1)/Ru with respect to the Ru islands is linked to the effect of the substrate on the bond strength and/or adlayer structure of CO and OH_ads species.     

Supramolecular assembly of biphenyl dicarboxylic acid on Au(1 1 1)

We investigate the structure of submonolayer film of 4,4′-biphenyl dicarboxylic acid (BDA) molecules on Au(1 1 1)-22 × √3 reconstructed surface with the use of scanning tunneling microscopy (STM). The BDA molecules form ordered structures on Au(1 1 1) surface which are commensurate with the substrate. We have concluded that the molecule-molecule interaction is mainly through hydrogen bonding formed by a straight dimer of BDA molecules. The straight dimer can be expressed as 4s + 2t or its six crystallographic equivalents using the unit vectors of the gold substrate of s and t. The length of hydrogen bonding (O-H-O) is estimated to be 0.31 nm assuming nearest neighbor distance of gold atoms of 0.275 nm. The ordering shows a clear contrast with the case of BDA on Cu(1 0 0) surface [S. Stepanow, N. Lin, F. Vidal, A. Landa, M. Ruben, J.V. Barth, K. Kern, Nanoletters 5 (2005) 901] in which a square type of ordering of molecules is observed by the formation of hydrogen bonding between a carboxylate (COO) and a benzene ring. The clear difference of the ordered structure on Cu(1 0 0) and Au(1 1 1) surface demonstrates that the absence (presence) of deprotonation of carboxyl group of BDA molecule on Au(1 1 1) (Cu(1 0 0)) switches the straight and square type ordering of BDA molecules.     

Two-photon resonance in optical second harmonic generation from quantum well states in ultra-thin Ag films grown on Si(1 1 1) surfaces

We studied optical second harmonic generation (SHG) oscillations during the growth of Ag films on Si(1 1 1) 7 × 7 clean and H-terminated surfaces. In the growth on the 7 × 7 surfaces at room temperature, the second and third peaks of the oscillation shift towards the thinner side with an increase in pump photon energy. Our analysis revealed that these peaks are caused by two-photon resonant transitions from the n = 1 and 2 occupied quantum well states (QWSs) in the Ag film to the Ag/Si interface at 1.9 eV above the Fermi level (E_f). In Ag growth on the hydrogen-terminated surfaces, the SHG oscillation was similar to that on the 7 × 7 surfaces at room temperature. However, the QWS-related peak was suppressed in the growth at 300 °C. This is attributed to an inhibited intrusion of the interface state into the Ag layers.