三类硬磁畴的形成及静态特性

本文提出畴壁中含有大量VBL的石榴石磁泡材料的三类硬磁畴的分类标准,描述了它们的形成方法和静态特性,并示出典型照片。从形成条件可以合理地推论,畴壁中VBL数目的增加导致硬磁畴静态特性的质的变化。 关键词：     

面内场对三类硬磁畴的影响

采用直流偏场整形的方法,研究了面内场对石榴石磁泡薄膜中三类硬磁畴的影响.得到面内场作用下三类硬磁畴畴壁中垂直布洛赫线(VBL)是逐步解体的,而且三类硬磁畴具有相同的临界面内场范围［H¹_ip,H²_ip］,其中H¹_ip是硬磁畴中VBL开始丢失时的临界面内场,H²_ip是VBL完全丢失 关键词： 硬磁畴 整形 垂直布洛赫线     

直流偏场和面内场联合应用下第二类哑铃畴的自发收缩

实验研究了第二类哑铃畴在直流偏场和面内场联合应用下的自发收缩现象，发现第二类哑铃畴的自发收缩不仅与面内场的大小有关，而且不与第二类哑铃畴在面内场中所处方向有关。采用照相法形象地揭示出：当第二类哑铃畴与面内场垂直时最容易发生自发收缩；当第二类哑铃畴与面内场平行时最难发生自发收缩。     

脉冲偏场作用下石榴石磁泡薄膜中布洛赫线的形成

实验研究了石榴石磁泡薄膜中不同脉冲宽度下产生的硬磁畴的动态特性.结果表明：由零偏场下产生的枝状畴收缩而成的哑铃畴均逆时针转动,与产生枝状畴时所用的脉冲偏场的脉冲宽度无关.而固定直流偏场下由软畴段硬化而成的哑铃畴的转动状态,则与所用的硬化脉冲偏场的脉冲宽度有关.低脉冲宽度下硬化成的哑铃畴均逆时针转动,随硬化脉冲宽度的升高,出现混合转动向顺时针转动的过渡.由此揭示了直流偏场和脉冲偏场在石榴石磁泡薄膜中形成正、负垂直布洛赫线的作用. 关键词： 磁畴 磁泡 垂直布洛赫线     

磁性材料的磁结构、磁畴结构和拓扑磁结构

首先简要地介绍了磁性材料中磁结构、磁畴结构和拓扑磁结构以及相互之间的关系. 一方面, 磁畴结构由材料的磁结构、内禀磁性和微结构因素决定; 另一方面, 磁畴结构决定了材料磁化和退磁化过程以及技术磁性. 拓扑学与材料物理、材料性能的联系越来越紧密. 最近的研究兴趣集中在一些拓扑磁性组态, 如涡旋、磁泡、麦纫、斯格米子等. 研究发现这些拓扑磁结构的拓扑性质与磁性能密切相关. 然后从尺寸效应、缺陷、晶界三个方面介绍国际学术界在磁结构、磁畴结构和拓扑磁结构方面的进展. 最后介绍了在稀土永磁薄膜材料的微观结构、磁畴结构和磁性能关系、交换耦合纳米盘中的拓扑磁结构及其动力学行为方面的工作. 通过对文献的评述, 得到以下结论: 开展各向异性纳米复合稀土永磁材料的研究对更好地利用稀土资源具有重要的意义. 可以有目的地改变材料的微结构, 可控地进行磁性材料的磁畴工程, 最终获得优秀的磁性能. 拓扑学的概念正在应用于越来越多的学科领域, 在越来越多的材料中发现拓扑学的贡献. 研究磁畴结构、拓扑磁性基态或者激发态的形成规律以及动力学行为对理解量子拓扑相变以及其他与拓扑相关的物理效应是十分重要的. 也会帮助理解不同拓扑学态之间相互作用的物理机制及其与磁性能之间的关系, 同时拓展拓扑学在新型磁性材料中的应用.     

具有条纹磁畴结构的NiFe薄膜的制备与磁各向异性研究

具有条纹磁畴结构的磁性薄膜表现出面内转动磁各向异性,对于解决高频电子器件的方向性问题起着至关重要的作用.本文采用射频磁控溅射的方法,研究了NiFe薄膜的厚度、溅射功率密度、溅射气压等制备工艺参数对条纹磁畴结构、面内静态磁各向异性、面内转动磁各向异性、垂直磁各向异性的影响规律.研究发现,在功率密度15.6 W/cm~2与溅射气压2 mTorr(1 Torr=1.33322×102Pa)下生长的NiFe薄膜,表现出条纹磁畴的临界厚度在250 nm到300 nm之间.厚度为300 nm的薄膜比250 nm薄膜的垂直磁各向异性场增大近一倍,从而磁矩偏离膜面形成条纹磁畴结构,并表现出面内转动磁各向异性.高溅射功率密度可以降低薄膜出现条纹磁畴的临界厚度.在相同功率密度15.6 W/cm~2下生长300 nm的NiFe薄膜,随着溅射气压由2 mTorr增大到9 mTorr,NiFe薄膜的垂直磁各向异性场逐渐由1247.8 Oe(1 Oe=79.5775 A/m)增大到3248.0 Oe,面内转动磁各向异性场由72.5 Oe增大到141.9 Oe,条纹磁畴周期从0.53μm单调减小到0.24μm.NiFe薄膜的断面结构表明柱状晶的形成是表现出条纹磁畴结构的本质原因,高功率密度下低溅射气压有利于柱状晶结构的形成,表现出规整的条纹磁畴结构,高溅射气压会导致柱状晶纤细化,面内转动磁各向异性与面外垂直磁各向异性增强,条纹磁畴结构变得混乱.     

铁磁/反铁磁双层膜系统中的磁畴动力学行为

比较了铁磁单层膜与铁磁/反铁磁双层膜结构中的磁畴演化行为, 发现由于反铁磁层膜对铁磁层膜的耦合作用使得系统的磁畴壁厚度、 磁畴壁等效质量、磁畴壁移动速度等发生了改变, 系统的矫顽场增强, 并出现了交换偏置场. 文章具体研究了反铁磁层耦合作用下其磁畴壁厚度、 等效质量以及磁畴壁移动速度等与反铁磁层的净磁化、 磁各向异性、界面耦合强度以及温度等的关系; 并研究了其对铁磁/反铁磁双层膜中的交换偏置场、矫顽场的影响. 进而 从磁畴结构的形成及其演化上揭示了铁磁/反铁磁双 层膜中出现交换偏置以及矫顽场增加的物理机制.     

磁畴壁手性和磁斯格明子的拓扑性表征及其调控

磁性斯格明子由于拓扑的保护性,具有很高的稳定性和较小的临界驱动电流,有望应用于未来的赛道存储器件中.而在中心对称体系,由于偶极作用的各向同性,磁泡的拓扑性和螺旋度都呈现出多样性的特征.其中非平庸的磁泡即等同于磁性斯格明子.我们通过近期实验结果,结合微磁学模拟的方法,发现在中心对称体系中磁斯格明子的拓扑性会受到体系垂直各向异性的调控.另外在加磁场的演变过程中,会很大程度上依赖于基态畴的畴壁特性.磁场的倾斜或者一定的面内各向异性也会改变磁斯格明子的形态.通过对材料的基态磁结构及磁各向异性的调节,辅助以面内分量的控制,可以对基态磁畴、进而对磁斯格明子的拓扑性实现调控.这对磁斯格明子在电流驱动存储器件中的应用具有重要意义.     

磁泡石榴石外延膜磁参数漂移的起因和抑制方法

本文研究了磁泡石榴石外延膜磁参数漂移的起因和抑制方法。我们认为石榴石外延膜磁参数漂移的主要起因是过饱和熔体的非自发成核和长大,并利用熔体营养料的有效浓度R_eff=R₄-R_n-R_e予以解释。外延过程熔体营养料浓度的消耗是R_n+R_e,而且R_n比R_e对石榴石外延膜磁参数的影响大得多。在回温控制过程中R_n=0,其熔体是相对稳定的。衬底的搅拌可加速熔体的非自发成核和长大。 关键词：     

电流驱动下磁畴壁快速运动的研究

在2011年第7期出版的Physics Today杂志上刊登了一篇关于自旋极化电流驱动磁畴壁运动的文章,介绍了该领域的最新进展.现对该文主要内容摘译如下:磁体具有净磁矩,但这并不意味着所有的非配对自旋指向同一方向.通常情况下,多个具有不同磁矩方向的磁畴同     

Analysis of the domain wall structures of the three kinds of hard domains in garnet bubble films

It was found experimentally that dumbbell domains of the second kind produced at high temperature can convert to dumbbell domains of the first kind at low temperature. And the ordinary hard bubbles produced at low temperature can convert to dumbbell domains of the first kind at high temperature. So we conclude that the domain wall structures of the three kinds of hard domains are the same. We also observe that the equilibrium separation between two neighboring vertical-Bloch lines is widened with the increasing temperature when the hard domains collapse under the effect of bias field.     

Behavior of vertical-Bloch-line chains of hard domains in garnet bubble films

As a main micromagnetic structure of domain walls in garnet bubble films, vertical-Bloch-line (VBL) chains play an important role in the characteristics of hard domains. In the 1970s, their study progressed rapidly during the period in which bubble devices were developed. When ultra-high-density Bloch line memory (BLM) was proposed in 1983, VBL chain behavior again attracted attention. This review will introduce the early achivements focusing primarily on the results of the last decade. A convenient method of forming VBL chains, a new classification scheme of hard domains and the unsolved “number effect” of VBLs will be discussed. Various behaviors of VBL chains under static compression, and in-plane magnetic fields will also be presented. Finally, the temperature stability of VBL chains will be reported.     

Formation of three kinds of hard domains by low-bias-field method

The formation of three kinds of hard domains (HDs) at low bias field was studied experimentally. Low-bias-field method provides a simple way to produce the three kinds of HDs in different proportions. Also, the relationship between the shape of the multi-branched domains (MBDs) and the different kinds of domains was studied. Most branches of the MBDs correspond to the first kind of dumbbell domains or the second kind of dumbbell domains; in contrast, few branches of the MBDs correspond to the hard bubbles or soft bubbles.     

Nucleation of magnetic bubble domains in iron garnet films by means of an electric probe

The possibility of the local nucleation of magnetic bubble domains from a single-domain state in an arbitrary region of a iron garnet film ((210) crystallographic orientation) by means of an electrically charged tip electrode has been experimentally demonstrated. The size of magnetic bubble domains nucleated near the contact point between the probe and sample depends on the magnitude of a DC voltage supplied to the probe. After the removal of the voltage, magnetic bubble domains move away from the probe, decreasing to the equilibrium radius.     

Evolution of spiral dynamic magnetic domains in Anger states of iron garnet films

Dynamic domain structures in the Anger state of iron garnet films are analyzed by a video micrographic technique. Data are obtained on the evolution of individual spiral domains over the lifetime of each domain. A new mechanism for the destruction of this state is discovered. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 6, 453–456 (25 March 1996)     

Stripe domains in Permalloy films as observed by ferromagnetic resonance and magnetic force microscopy

We have studied the static and dynamic responses of three (62, 115 and 308 nm thick) Permalloy (Ni_0.81Fe_0.19) films by DC magnetization, ferromagnetic resonance and magnetic force microscopy. The thickest film presents very regular stripe domains with widths slightly smaller than the film thickness. Ferromagnetic resonance performed on the thinnest film shows one absorption peak when the field is applied along the film plane, and more than one in the other samples. These multiple absorptions are analogous to the high frequency susceptibility peaks observed at zero field in Permalloy films above the critical thickness reported previously by other authors.     

Formation of L10-FeNi hard magnetic material from FeNi-based amorphous alloys

L1₀-FeNi hard magnetic alloy with coercivity reaching 861 Oe was synthesized through annealing Fe₄₂Ni_41.3Si₈B₄P₄Cu_0.7 amorphous alloy, and the L1₀-FeNi formation mechanism has been studied. It is found the L1₀-FeNi in annealed samples at 400 ℃ mainly originated from the residual amorphous phase during the second stage of crystallization which could take place over 60 ℃ lower than the measured onset temperature of the second stage with a 5 ℃/min heating rate. Annealing at 400 ℃ after fully crystallization still caused a slight increase of coercivity, which was probably contributed by the limited transformation from other high temperature crystalline phases towards L1₀ phase, or the removal of B from L1₀ lattice and improvement of the ordering quality of L1₀ phase due to the reduced temperature from 520 ℃ to 400 ℃. The first stage of crystallization has hardly direct contribution to L1₀-FeNi formation. Ab initio simulations show that the addition of Si or Co in L1₀-FeNi has the effect of enhancing the thermal stability of L1₀ phase without seriously deteriorating its magnetic hardness. The non-monotonic feature of direction dependent coercivity in ribbon segments resulted from the combination of domain wall pinning and demagnetization effects. The approaches of synthesizing L1₀-FeNi magnets by adding Si or Co and decreasing the onset crystallization temperature have been discussed in detail.     

超晶格中电场单极畴与偶极畴的形成和输运

采用分立漂移模型,数值模拟和分析直流偏压下超晶格中单极电场畴和偶极电场畴的形成和输运.随着超晶格两端接触层掺杂浓度和阱中掺杂浓度的不同,可以得到单极畴、偶极畴以及单极畴与偶极畴共存 关键词： 超晶格 单极畴 偶极畴 电流自激振荡     

相对论电子束在角向磁场中产生硬X射线的实验研究

在闪光二号加速器上用相对论电子束在低压气体和角向磁场中传输打靶的方法,进行了硬X射线产生的实验研究。在47cm传输距离上,电子束与钽靶作用,获得了面积积分剂量率为2.1×1010Gy·cm2/s的硬X射线辐射（能谱范围为20～120keV）,在总的辐照面积上(4π方向)面积积分剂量达1 843Gy·cm2,X射线转换率达到108Gy·cm2/kJ。