磁控溅射制备微球表面金属Mo涂层的研究

利用磁控溅射制备了各种工艺参数不同的微球表面金属Mo涂层样品,并通过白光干涉仪和扫描电子显微镜对样品的表面及剖面进行了系统的测试分析。分别探究了溅射工作气压和沉积制备时间对微球表面Mo涂层表面形貌以及结晶质量的影响规律。结果表明通过优化工艺参数可制备微球直径约为800μm、涂层厚度为3.5μm到14.1μm、厚度均匀性良好的微球表面Mo涂层。Mo涂层中的晶粒呈现出柱状结构致密堆积在一起,且随涂层的厚度增加晶粒间空隙增大。     

磁控溅射镀膜过程中非均匀磁场中电子的运动

讨论了磁控溅射过程中电子在非均匀电磁场中的运动规律,分析了靶材非均匀溅射及磁控溅射基片温升低、溅射速率高的原因.     

Formation of pyramid-like nanostructures during cobalt film growth by magnetron sputtering

Cobalt pyramid-like nanostructures with sharp tips were formed on the surfaces of cobalt thin films grown by magnetron sputtering only when a negative bias was applied. There are two types of pyramids, which grew on top of a columnar grain structure directly from Si(001) substrates. The formation of pyramid-like nanostructures is only selective to a -Co (hcp) thin film but not a -Co (fcc) thin film, where the basal plane is 101̄0 with several well-defined low-energy faceted planes. When grown on Si(111) substrates, the shape of the basal plane changes to a pentagon or other polygon. The island nucleation seems to depend on adatom energy, sputtering rate and the interface stress between the Co thin film and the substrate, but growth is significantly determined by the minimum surface configuration of the structure. PACS 61.10.Nz; 68.55.Ac; 68.37.Lp; 66.30.Pa; 68.35.Md     

Target voltage behaviour of a vanadium-oxide thin film during reactive magnetron sputtering

This paper simulates reactive magnetron-sputtering in constant current mode in a Vanadium-O 2 /Ar system equipped with a DC power supply by adopting both kinetics model and Berg’s model.The target voltage during the reactive sputtering has been investigated as a function of reactive gas flow.Both experiments and simulations demonstrate a hysteresis curve with respect to the oxygen supply.The time-dependent variation of the target mode is studied by measuring the target voltage for various reactive oxygen gas flows and pre-sputtering times.The presputtering time increases with the increased initial target voltage.Furthermore,a corresponding time-dependent model simulating target voltage changes is also proposed.Based on these simulations,we find some relationships between the discharge voltage behaviour and the properties of the formed oxide.In this way,a better understanding of the target voltage changes during reactive sputtering can be achieved.We conclude that the presented theoretical models for parameter-dependent case and time-dependent case are in qualitative agreement with the experimental results and can be used to comprehend the target voltage behaviour in the deposition of vanadium oxide thin films.     

High-pressure magnetron sputtering: Gas-phase processes

Thermalization of the energetic atoms emitted by a target at pressures up to 100 Pa causes heating and motion of the gaseous medium. The temperature and velocity of the gas have been measured as a function of the magnetron-discharge parameters. This paper presents the dependences of the deposition rate, the thickness profile, and the film structure on the pressure and the discharge power. It shows that they are well described by a simple diffusion model of the transport of the thermalized atoms of the target that takes into account the motion and heating of the gaseous medium. Zh. Tekh. Fiz. 68, 24–32 (July 1998)     

Effects of sapphire substrates surface treatment on the ZnO thin films grown by magnetron sputtering

The surface treatment effects of sapphire substrate on the ZnO thin films grown by magnetron sputtering were studied. The sapphire substrates properties have been investigated by means of atomic force microscopy (AFM) and X-ray diffraction rocking curves (XRCs). The results show that sapphire substrate surfaces have the best quality by CMP with subsequent chemical etching. The surface treatment effects of sapphire substrate on the ZnO thin films were examined by X-ray diffraction (XRD) and photoluminescence (PL) measurements. Results show that the intensity of (0 0 2) diffraction peak of ZnO thin films on sapphire substrates treated by CMP with subsequent chemical etching was strongest, FWHM of (0 0 2) diffraction peak is the narrowest and the intensity of UV peak of PL spectrum is strongest, indicating surface treatment on sapphire substrate preparation may improve ZnO thin films crystal quality and photoluminescent property.     

Application of high-frequency magnetron sputtering to deposit thin calcium-phosphate biocompatible coatings on a titanium surface

Thin calcium-phosphate coatings were deposited on titanium substrates by high-frequency magnetron sputtering. The elemental composition of coatings and types of chemical bonds were studied by Rutherford backscattering (RBS) and Fourier transform infrared spectroscopy (FTIR), respectively. An analysis of the IR spectra detected absorption bands caused by vibrations of phosphate PO ₄ ^3? groups and pyrophosphate H₂PO ₄ ^? anions, which are typical of apatites. The RBS results showed that the coating contains elements typical of calcium phosphates, i.e., Ca, P, and O; 45.4 ± 1.1, 3.6 ± 0.5, and 41.1 ± 0.7 at %, respectively. The Ca/P atomic ratio depends on sputtering conditions and varies in the range 1.7–4.0. The physicomechanical characteristics of the coatings and their solubility in a biological liquid were studied. The grown coatings can significantly reduce dissolution of substrates and extraction of dopants into the surrounding solution.     

射频磁控溅射制备氧化钒薄膜的研究

氧化钒（VOx）薄膜是一种广泛应用于红外热成像探测的薄膜材料,研究VOx薄膜的制备工艺、获取高电阻温度系数（TCR）的VOx薄膜具有重要意义。以高纯金属钒作靶材,采用射频磁控溅射的方法在室温下制备了VOx薄膜。主要研究了氩氧流量比以及功率等工艺参数对薄膜TCR的影响,获得了较好的工艺参数。采用万用表和X射线光电子能谱仪（XPS）分别测试了不同条件下射频磁控溅射法制备的VOx薄膜的电阻特性和薄膜成分,测试结果表明,采用所获得的较好工艺参数制备的VOx薄膜TCR值大于1.8%。     

GaN films deposited by middle-frequency magnetron sputtering

GaN films were deposited on Si (111) substrates by middle-frequency magnetron sputtering. X-ray diffraction revealed preferential GaN (0 0 0 2) orientation normal to the substrate surface for all the films deposited. The diffraction intensity and N contents were found to depend strongly on the total gas pressure. Good quality films were only obtained at pressures in the range of 0.4-1.0 Pa. Little diffraction of GaN (0 0 0 2) could be observed either at total pressures below 0.4 Pa or above 1.0 Pa. The GaN films produced under the optimized conditions have an N:Ga ratio of 1:1 as determined by energy-dispersive X-ray spectroscopy.     

YBCO step-edge SQUIDs by magnetron sputtering technique

Summary YBCO step-edge junction d.c. SQUIDs have been realized by using the Inverted Cylindrical Magnetron Sputtering (ICMS) technique. This last represents a novel technology for high-T _c Josephson junctions (HTSC). Steps are obtained by standard ion milling procedure on LaAlO₃ (100) substrates using Nb-masks patterned by reactive ion etching. Measurements of currentvs. voltage, maximum d.c. Josephson currentvs. magnetic field and SQUID voltage response measurements have been performed, also as a function of the temperature. Operating temperature as high as 77K has been achieved. At 4.2K the SQUIDs show a maximum voltage of flux transfer function (∂V/∂ϕ)_max=870 μV/Ф₀ and a good periodicity of theV-ϕ modulation up to 20Ф₀ without any sign of hysteresis. The ratio between the step height (h) and the film thickness (d) seems to play a fundamental role in determining Josephson properties of the bridges, these conditions being more severe with respect to most of the data available in literature. Paper presented at the ?VII Congresso SATT?, Torino, 4–7 October 1994.     

Evolution of the phase-structure state during annealing of Fe-ZrN films grown by magnetron sputtering

The evolution of the phase-structure state of Fe-ZrN films grown by RF magnetron sputtering and annealed at T = 200–650°C has been studied by transmission electron microscopy, high-resolution electron microscopy, and X-ray diffraction analysis. It has been found that the initial state of the film contains 1- to 5-nm crystallites of α-Fe-based solid solution supersaturated with nitrogen. The number of such crystallites increases, the concentration of nitrogen in them decreases and 2- to 10-nm nanocrystallites of ZrN and Fe2N nitride phases appear after annealing. The formation of zirconium nitride at the first stage (200–500°C) is associated with a decrease in the degree of supersaturation of the α-Fe lattice with nitrogen. At a higher annealing temperature (650°C), a decrease in the nitrogen concentration in the lattices of both the bcc Fe and zirconium nitride phase leads to the formation of iron nitride crystallites.     

磁控溅射材料沉积速率的定标方法的研究

介绍了一种利用磁控溅射制备多层膜速率的定标方法。用高精度磁控溅射镀膜设备在同一块基片上先后镀制了两种周期的多层膜,用X射线衍射仪对其进行掠入射衍射测量,测量数据经线性拟合,可同时求得两种多层膜的周期,进而得到镀膜速率。与常用的定标方法相比,该方法不仅可以得到与常用定标方法相同的实验结果,而且提高了工作效率。     

双极性脉冲磁控溅射电源设计

双极性脉冲电源是磁控溅射系统中的关键设备之一。根据铌溅射处理装置的技术要求,研制了一套输出电压0~800 V可调、脉冲宽度20~200 μs可调、频率0~60 Hz可调、脉冲电流最大幅值约150 A的双极性脉冲电源,分别给出了该电源在水电阻负载和等离子体负载下的实验结果。设计上采用DSP控制开关电源的方式对储能电容器进行恒流充电;综合应用FPGA,PLC及触摸屏组成人机交互系统,控制输出光脉冲信号,经负压偏置驱动后使桥式结构的脉冲形成网络产生正负交替双极性脉冲。通过大量实验论证,该电源解决了等离子体负载放电打弧等问题,达到了理想的溅射效果,满足了指标要求。     

磁约束磁控溅射源的磁场设计

磁控溅射镀膜机中的磁场分布对靶材利用率有着重要影响。为了提高磁控溅射源的靶材利用率,设计组抛弃了传统的跑道环形式的磁场设计理念,而是将永磁体或电磁体分置溅射靶的两侧,使其在溅射靶表面上方产生磁约束(磁镜)磁场。本设计使用有限元分析方法对磁场进行仿真计算,通过模拟磁场计算结果和实测结果的比较,验证有限元方法的可靠性。Ansys有限元分析软件对磁场分布进行仿真模拟,大大简化了计算并缩短了设计周期。通过实验验证,磁约束磁场大大提高了靶材的利用率。     

直流磁控溅射制备AlN薄膜的结构和表面粗糙度

采用直流磁控反应溅射法,在Si(111)基底上成功制备了多晶六方相AlN薄膜.研究了溅射过程中溅射气压对薄膜结构和表面粗糙度的影响.结果表明:当溅射气压低于0.6 Pa时,薄膜为非晶态,在傅里叶变换红外光谱中,没有明显的吸收峰;当溅射气压不低于0.6 Pa时,薄膜的X射线衍射图中均出现了六方相的AlN(100)、(11...     

Superconducting MgB2 films obtained by magnetron sputtering

Superconducting MgB₂ films with a superconducting transition temperature of 24 K were obtained by magnetron sputtering. The high homogeneity of the films was demonstrated by the magneto-optical imaging of the magnetic flux penetration.     

Effect of sputtering power on surface topography of dc magnetron sputtered Ti thin films observed by AFM

Titanium films were deposited on glass substrates at room temperature by direct current (dc) magnetron sputtering at fixed Ar pressure of 1.7 Pa and sputtering time of 4 min with different sputtering power ranging from 100 to 300 W. Atomic force microscopy (AFM) was used to study topographic characteristics of the films, including crystalline feature, grain size, clustering and roughening. The amorphous-like microstructure feature has been observed at 100-150 W and the transition of crystal microstructure from amorphous-like to crystalline state occurs at 200 W. The increase in grain size of Ti films with the sputtering power (from 200 to 300 W) has been confirmed by AFM characterization. In addition, higher sputtering power (300 W) leads to the transformation of crystal texture from globular-like to hexagonal type. The study has shown that higher sputtering power results in the non-linear increase in deposition rate of Ti films. Good correlativity between the surface roughness parameters including root mean square (RMS) roughness, surface mean height (Ra) and maximum peak to valley height (P-V) for evaluating the lateral feature of the films has been manifested. Surface roughness has an increasing trend at 100-250 W, and then drops up to 300 W.