分布式抽运连续光纤激光器研究

为了避免高功率光纤激光器中光纤端面出现热效应问题,依据多点级联结构的耦合器,对分布式抽运的光纤激光器进行了研究。首先,介绍了实验室自主研制的级联耦合器。然后,分析了耦合器插入对光纤激光器的影响。最后,选用自制的耦合器搭建了分布式抽运的光纤激光器。实验结果表明:对耦合器插入损耗的研究,能够促进高功率级联耦合器的实现。在光纤激光器结构中,975 nm泵浦功率注入1.1 k W时,1 080nm激光功率输出为770 W,光-光转换效率为77%。在主控振荡功率放大结构中,激光功率输出为635 W,放大级的光-光转换效率为78%。分布式抽运方式可以使泵浦光多点注入,避免了热量的集中,能够获得千瓦级的激光功率输出。     

掺镱全光纤激光器研究

依据速率方程和边界条件,对高功率多点抽运全光纤激光器进行了研究.通过自制的级联侧面泵浦耦合器搭建全光纤激光器,级联耦合器的单点泵浦效率为96%,泵浦传输损耗为10%,信号光损耗分别是0.18dB和0.87dB;线性谐振腔结构中:前向抽运的光-光转换效率为69%,低于后向抽运中70%的光-光转换效率,与理论分析一致;双向泵浦方式中,在单臂输入975nm泵浦功率为110 W的条件下,激光功率输出为311 W,中心波长为1 080nm,光谱宽度为1.6nm,光-光转换效率为70%,光束质量约为1.3.激光器性能稳定,若增加单臂泵浦功率或级联泵浦耦合器个数,可获得更高功率的激光输出.     

熔锥型微纳光纤耦合器的理论与实验研究

针对熔融拉锥系统制得的熔锥型微纳光纤耦合器,选择适当的连续函数描述其光场分布,采用归一化的三角分布和矩形分布的加权叠加,以及高斯分布和三角分布的加权叠加实现了模场沿耦合器区域的连续变化;利用局部模式耦合理论推导出腰区及腰区附近锥形区的耦合系数计算公式,并得到微纳光纤耦合器输出光功率随拉伸长度的变化曲线.计算结果表明,随着拉伸长度的增加,光能量在两臂中来回交替耦合的程度变小并且呈现包络样,直至腰区耦合功能消失.通过实时监测拉制微纳光纤耦合器的输出光功率,得到火焰扫描宽度以及氢气流量对双纤失去耦合效应拉伸长度的影响:火焰扫描宽度(均匀腰区)越宽,拉伸长度临界值越大;氢气流量(熔融度)越大,拉伸长度临界值越小.实验结果显示,当光纤耦合器腰区直径达到1.6μm时,耦合功能消失,两输出端口光功率相同且恒定,微纳光纤耦合器具备稳定的光学传输特性.     

掺铒光纤非线性耦合器的实验研究

提出一种耦合参量可用光调控的掺铒光纤非线性耦合器.用熔融拉锥法熔合两根掺铒光纤,拉制成工作波长为155nm的3dB掺铒光纤耦合器.通过调变输入耦合器一臂的980nm泵浦光功率,可以改变两臂的传播常量差,从而改变耦合器两臂信号光的相对输出功率.通过测量输入泵浦光功率和两臂信号光输出功率,得到直通臂耦合比依赖于泵浦光功率的实验曲线.实验研究表明,当泵浦光功率从0 mW变化至20 mW时,耦合比的变化可达到40％.与理论模拟的结果一致.     

大功率光纤激光合成功率突破1kW

2008年12月24日,中国兵器装备研究院大功率激光实验室成功完成了7路光纤激光组束合成实验,在7路光纤激光输出总功率为1 288 W的情况下,通过自制的7×1熔融拉锥耦合器成功实现激光合成输出1 002 W,其合成效率为77.8%.     

端面泵浦掺Yb3+双包层光纤激光器

从双包层光纤激光器的速率方程出发，得到了光纤中泵浦光与激光的功率分布、输出功率与泵浦功率的关系、腔镜反射率及光纤长度对输出功率的影响。研究结果表明：输出激光功率与光纤长度及后腔镜反射率有很强的依赖关系，存在一个输出功率最大的最佳光纤长度。后腔镜反射率越大，输出激光功率越小；当光纤长度较短时，在输出端放置反射镜使泵浦光高反射，可以提高输出功率和效率。通过对端面泵浦掺Yb3+双包层光纤激光器进行理论分析和实验研究，得到输出激光的中心波长为1088.3nm，斜率效率为33.7%，最大输出功率为1.75W。     

级联掺磷光纤喇曼激光器的解析优化

讨论了二级级联喇曼光纤激光器的解析解和优化设计.通过引入几何平均功率、增益因子和归一化光纤有效长度,将描述泵浦光和斯托克斯光沿喇曼增益光纤分布的微分方程组简化成代数方程组,在对泵浦光采用线性传播近似后,获得了二级级联喇曼激光器的解析解.所获得的解析解同数值模拟结果吻合得很好.利用该解析解可方便和快速地讨论级联喇曼激光器的优化设计,计算不同泵浦功率下的最佳光纤长度、输出光纤光栅反射率和转换效率.泵谱功率越大,最佳光纤长度越短,最佳输出光纤光栅反射率越小.     

2μm泵浦中红外硫化玻璃光纤拉曼激光器的理论分析与优化

根据2μm掺铥光纤激光泵浦中红外硫化玻璃光纤拉曼激光器的模型,采用非线性耦合方程组对激光器的性能进行了研究与分析。同时,对激光器各参数包括光纤长度、输出耦合器反射率、光纤散射损耗对激光器性能的影响进行了分析并给出了优化结果。数值仿真结果表明,在一定条件下,2μm泵浦硫化玻璃光纤产生拉曼激光的斜率效率可以超过85%。另外,光纤长度和输出耦合器反射率不仅对输出激光功率的影响很大,而且是相互影响的,必须同时进行优化。结果也表明,输出激光的功率随光纤散射损耗增加急剧线性下降。以上的结果可以用于硫化玻璃光纤级联拉曼激光器的实验指导和优化设计。     

大功率光纤激光合成功率突破3kW

2010年1月16日,中国兵器装备研究院大功率激光实验室成功完成了7路光纤激光组束合成实验,在7路光纤激光输出总功率为4 204 W的情况下,通过自制的7×1熔融拉锥耦合器成功实现激光合成输出3 434 W,其合成效率达到81.7%.     

强泵浦下掺Yb3+双包层光纤激光器输出特性数值分析和实验研究

对强泵浦下线形腔掺Yb3+双包层光纤激光器输出特性进行了理论和实验研究。通过数值模拟,分析了泵浦光及激光在光纤中的分布、输出功率与泵浦功率的关系、光纤长度及腔镜反射率对激光输出功率的影响。在实验中,利用D型掺Yb3+双包层光纤获得了输出功率10 6W的光纤激光输出,斜率效率达86%。测量了在不同输出耦合条件下的输出功率、阈值泵浦功率和斜率效率,理论分析与实验结果基本一致,为进一步提高光纤激光器功率提供了理论和实验依据。     

Al(111)/Al_3Li(111)的界面性质

运用基于第一性原理的平面波贋势法,计算研究了Al (111)/Al_3Li (111)的界面性质.结果表明:Al (111)/Al_3Li (111)的界面具有三种原子配位关系结构,其中界面处仍保持与基体Al一致的三明治堆垛构型的界面稳定性最好.计算表明,该结构界面最薄弱层,位于Al_3Li (111)内,其分离功最小(约1.53 J/m~2),强度最弱,而基体Al和Al_3Li内部的强度随着到界面距离的增大而逐渐增强.     

锰原子的二步多光子与三步三光子共振电离研究

激光共振电离技术是痕量分析中的重要手段之一。文章以速率方程理论为基础,对锰原子的激光共振电离过程进行了分析,讨论了电离过程中各级激发光功率密度及激光作用时间对电离效率的影响;提出了根据所要求的电离效率和激光作用时间计算所需要的各激发光或电离激光的功率密度的方法;得到了饱和激发或饱和电离的规律及阈值条件。研究发现,在激光作用时间为10 ns时,锰原子饱和电离的激光强度阈值基本都在108 W·cm-2的量级,只有“1+1”双色双共振低三个量级;而“1+1”和“1+1+1”饱和激发的激光强度阈值则在102～103 W·cm-2量级;并且随着激光作用时间的增加,各过程的饱和激发和饱和电离的激光强度阈值将单调减少。     

Two-photon photoemission from Ni (1 1 0) and (1 1 1) surfaces

Photoemission was observed when the samples were irradiated with photons in the energy range from 2.5 to 3.3 eV from a tunable dye laser with an intensity of 10⁸Wcm^?2. The emission shows a quadratic intensity dependence. The variation with angle of incidence and polarization is different for the two surfaces. The result obtained from the (1 1 0) surface is discussed with help of the band structure as a two-photon surface photoelectric effect.     

Comparing the band structure of Ag(1 1 1) monolayers on Ni(1 1 1) and Ni (0 0 1)

Ag(1 1 1) monolayers prepared on two substrates, Ni(1 1 1) and Ni(0 0 1), were studied with angle-resolved photoemission; their two-dimensional band dispersions were found to be identical within experimental uncertainties. Comparing the present results with those for Ag/Cu(0 0 1), the major difference is just a shift of 0.32 eV in all the binding energies. Thus the band topology of Ag overlayers in these systems is quite insensitive to the electronic and atomic structures of the substrates.     

Schottky barriers on diamond (1 1 1)

We have measured Schottky barrier heights Ø_B = 1.3 eV for Au and Ø_B = 1.5 eV for Al on (p-type) diamond(1 1 1)?(1 × 1) using photoelectron spectroscopy with synchroton radiation. These barrier heights yield a barrier index of S = 0.2, which is closer to the values for Si and Ge (S ～ 0.1) than to the value S = 0.4 calculated for jellium on an ideal diamond(1 1 1) surface. After reacting Al with the diamond surface by annealing to 800° C, we find that Ø_B decreases by 0.24 to 1.25 eV.     

Structure of the laser annealed Si(1 1 1)-(1 × 1) surface

LEED analysis of the laser annealed Si(1 1 1)-(1 × 1) surface shows that a model with a graphite-like top double layer of atoms with a spacing of 2.95±0.02 Å from the second double layer describes the LEED data as well as the Zehner model, but involves large displacements of the atoms normal to the surface as required by ion scattering results. It is suggested that this model provides a natural interpretation of the low energy He atom scattering data for the Si(1 1 1)-(7 × 7) surface.     

Contrasting ion neutralisation spectra of Ni(1 1 1) and W(1 1 0) surfaces

We present the results of an appropriate calculation of the ion neutralisation spectrum of W(1 1 0) exposed to a beam of very low energy He⁺ ions. The calculated spectrum shows considerable structure in contrast to the spectrum of Ni(1 1 1). It appears, therefore, that experimental data on W(1 1 0), presently non available, would be most useful in understanding the ion neutralisation process.     

Hanle lifetime measurements of SrI 1P1 and CaI 1P1 levels excited by a neutral beam of 1 1S0 helium atoms

A 0.8 keV He(1 ¹S₀) beam was used to coherently excite the ¹P₁ levels of Sr and Ca targets. The coherence appears as an alignment of the excited state with respect to the beam axis. We report here the results of a Hanle measurement, or a zero-field level-crossing experiment, performed on these coherently excited levels. The radiative lifetimes of the SrI ¹P₁ and CaI ¹P₁ levels were measured to be 4.7 ns and 5.3 ns, respectively. These values are in good agreement with conventional Hanle measurements.     

InAs/GaAs (1 1 1)A heteroepitaxial systems

We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (1 1 1)A substrates by molecular beam epitaxy. In contrast to conventionally used (0 0 1) surfaces, where Stranski–Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.