Ballistic transport in extended Datta-Das spin field effect transistors

The model of the Datta-Das spin field effect transistor [S. Datta, B. Das, Appl. Phys. Lett. 56 (1990) 665] is extended in several respects: (1) the Rashba effect and Dresselhaus effect coexist; (2) the incoming and outgoing leads are both ferromagnetic; (3) the interfacial scattering and band mismatch are taken into account. By using the Griffith boundary conditions, the transmission coefficients and, thus, the Landauer-Büttiker conductance are obtained analytically. The transmission probability and conductance of the spin field effect transistor are studied in detail.     

Kapitza conductance of Bi/sapphire interface studied by depth- and time-resolved X-ray diffraction

We present Kapitza conductance measurements of the bismuth/sapphire interface using depth- and time-resolved X-ray diffraction, for Bi film thicknesses ranging from 65 to 284 nm. Our measurements provide complementary information about heat transport in the films; we directly observe the thinnest film to be uniformly heated within 1 ns, whereas the thickest film sustains a large near-surface temperature gradient for several ns. The deduced Kapitza conductance is 1950 W/cm²/K. This value is close to the theoretical prediction using the radiation limit.     

Alternating current transport property for a two-channel interacting quantum wire

We study theoretically the alternating current (ac) transport property through a two-channel clean quantum wire of finite length in the presence of both inter-channel and intra-channel electron-electron (e-e) interactions. Using the bosonization technique and linear response theory, we have obtained analytical expressions of the ac conductance. Interestingly, the ac conductance oscillations, with two different frequencies, form a beat which governs the behavior of the transport property in the presence of inter-channel e-e interaction. This result provides us with a new way to control the transport property of narrow quantum wires by engineering the Fermi velocities in the two different channels, i.e., the electron density.     

Shot noise suppression in a series graphene tunnel barrier structure

The shot noise properties in a graphene-based multi-quantum well structure are investigated theoretically. It is found that when the number of the potential barriers (quantum wells) is big enough and the width of the barriers and the wells is shorter than the mean free path, another Dirac-like point at which the Fermi energy equals half of the barrier height appears. The transport is almost forbidden at this new Dirac-like point, the conductivity gets the minimum, and the Fano factor approaches 1/3. With the random potential barrier being taken into consideration, the conductance enhances clearly, meanwhile the Fano factor is suppressed much more.     

Quantum dots as scatterers in electronic transport: interference and correlations

Conductance through a system consisting of a wire with side-attached quantum dots is calculated. Such geometry of the device allows to study the coexistence of quantum interference, electron correlations and their influence on conductance. We underline the differences between ‘classical’ Fano resonance in which the resonant channel is of single-particle nature and ‘many-body’ Fano resonance with the resonant channel formed by Kondo effect. The influence of electron-electron interactions on the Fano resonance shape is also analyzed.     

Quantum Thermal Transport through Extremely Cold Dielectric Chains

In the framework of Green＇s function theory out of equilibrium, a Landauer-Buttiker （LB） formula for thermal conductance is derived. A simplified model for describing extremely cold dielectric chains is proposed for the first time. Further we apply the present LB formula for studying thermal conductance at low-lying modes, emerging in dielectric atom chains. We find that quantum thermal conductance undergoes an anomalous transition due to new quasiparticle excitations, resulting from nonlinear atom-atom interactions. This theoretical prediction is in excellent agreement with a high-accuracy measurement to thermal conductance quantum.     

Effect of triangle vacancy on thermal transport in boron nitride nanoribbons

Recently, triangle vacancy in hexagonal boron nitride is observed experimentally. Using nonequilibrium Green’s function method, we investigate thermal transport properties of boron nitride nanoribbons (BNNRs) with a triangle vacancy. The effect of triangle vacancy on the phonon transmission of zigzag-edged BNNRs (Z-BNNRs) is different from that of armchair-edged BNNRs (A-BNNRs). The triangle vacancy induces antiresonant dips in the spectrum of Z-BNNRs. Moreover, the boron-terminated triangle vacancy causes antiresonant zero-transmission dip and the number of the zero-transmission dip increases with the geometrical size of triangle vacancy. For the A-BNNRs with triangle vacancy, except some antiresonant dips, a resonant peak is found in the transmission. The antiresonant and resonant phenomena are explained by analyzing local density of states and local thermal currents. Although the antiresonant dip and the resonant peak are both originated from quasibound states, their distributions of local thermal currents are distinct, which leads to the transport discrepancy. In addition, the thermal conductance of BNNRs decreases linearly with increasing the vacancy size.     

Low-temperature STM/STS studies on boron-doped (1 1 1) diamond films

We have performed scanning tunneling microscopy/spectroscopy (STM/STS) experiments on (1 1 1)-oriented epitaxial films of heavily boron-doped diamond (T_c∼5.4 K). We present that tunneling conductance spectra show temperature-dependent spatial variations. In the low-temperature region (T=0.47 K), the tunneling spectra do not show strong spatial dependence and a superconducting energy gap is observed independent of the surface morphology. In the high-temperature region (T=4.2 K), on the other hand, the tunneling conductance spectra show significant spatial dependence, indicating the inhomogeneous distribution of the superconducting property due to the distribution of boron atoms.     

Temperature and junction-type dependency of Andreev reflection in MgB2

We studied the voltage and temperature dependency of the dynamic conductance of normal metal-MgB₂ junctions obtained either with the point-contact technique (with Au and Pt tips) or by making Ag-paint spots on the surface of MgB₂ samples. The fit of the conductance curves with the generalized BTK model gives evidence of pure s-wave gap symmetry. The temperature dependency of the gap, measured in Ag-paint junctions (dirty limit), follows the standard BCS curve with 2Δ/k_BT_c=3.3. In out-of-plane, high-pressure point-contacts we obtained almost ideal Andreev reflection characteristics showing a single small s-wave gap Δ=2.6±0.2 meV (clean limit).     

Enhanced spin polarization in an asymmetric magnetic graphene superlattice

The authors investigate the spin-resolved transport through an asymmetrical magnetic graphene superlattice (MGS) consisting of the periodic barriers with abnormal one in height. To quantitatively depict the asymmetrical MGS, an asymmetry factor has been introduced to measure the height change of the abnormal barrier. It is shown that the spin filter effect is strongly enhanced by the barrier asymmetry both in the Klein and the classical tunneling regimes. In the presence of abnormal barrier, the conductance with certain spin direction is suppressed with respect to different tunneling regimes, and thus high spin polarization with opposite sign can be achieved.     

Contact conductance between graphene and quantum wires

The contact conductance between graphene and two quantum wires which serve as the leads to connect graphene and electron reservoirs is theoretically studied. Our investigation indicates that the contact conductance depends sensitively on the graphene-lead coupling configuration. When each quantum wire couples solely to one carbon atom, the contact conductance vanishes at the Dirac point if the two carbon atoms coupling to the two leads belong to the same sublattice of graphene. We find that such a feature arises from the chirality of the Dirac electron in graphene. Such a chirality associated with conductance zero disappears when a quantum wire couples to multiple carbon atoms. The general result irrelevant to the coupling configuration is that the contact conductance decays rapidly with the increase of the distance between the two leads. In addition, in the weak graphene-lead coupling limit, when the distance between the two leads is much larger than the size of the graphene-lead contact areas and the incident electron energy is close to the Dirac point, the contact conductance is proportional to the square of the product of the two graphene-lead contact areas, and inversely proportional to the square of the distance between the two leads.     

Conductance in normal metal/insulator/ferromagnetic superconductor tunnel junctions

In this paper, the superconducting order parameter and the energy spectrum of the Bogoliubov excitations are obtained from the Bogoliubov-de Gennes equation for a ferromagnetic superconductor (FS). In the framework of the Blonder-Tinkham-Klapwijk model, we present the differential conductance of the normal metal/insulator/FS junctions. It is shown that the exchange energy h in the FS can lead to the Zeeman splitting of the conductance peaks and the energy difference between the two splitting peaks is equal to 2h. The observation of such Zeeman splitting in the conductance spectrum can be taken as evidence for the coexistence between superconductivity and ferromagnetism.     

Anisotropic property in interacting quantum wires embedded in (110) plane

We investigate the theoretically combined effect of spin-orbit interactions and Coulomb interaction on the ground state and transport property of a quantum wire oriented along different crystallographic directions in the (110) plane. We find that the electron’s ground state exhibits phase transition among spin density wave, charge density wave, singlet superconductivity and metamagnetism, which can be controlled by changing the crystallographic orientation, the strengths of the spin-orbit interactions and the Coulomb interaction. The ac conductance exhibits a significant anisotropic behavior and a out-of-plane spin polarization which can be tuned by an in-plane electric field.     

Selectively dopedn-AlxGa1−xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors

In selectively dopedn-Al_xGa_1–xAs/GaAs heterostructures with high-mobility two-dimensional electron gas (2 DEG) at the heterointerface a second conductive channel exists, if the Al_xGa_1–xAs layer is not totally depleted from free carries. The occurrence of parallel conductance has a deleterious effect on the performance of high-electron mobility transistors (HEMTs) fabricated from this material. Although in principle computable, parallel conductance depends on a large number of design parameters to be chosen for the heterostructure, which are additionally affected by the presence of deep electron traps inn-Al_xGa_1–xAs of composition 0.25n-Al_xGa_1–xAs/GaAs heterostructures is shown.     

Modeling of a Silicon Nanowire pH Sensor with Nanoscale Side Gate Voltage

A silicon nanowire （Si-NW） sensor for pH detection is presented. The conductance of the device is analytically obtained, demonstrating that the conductance increases with decreasing oxide thickness. To calculate the electrical conductance of the sensor, the diffusion-drift model and nonlinear Poisson-Boltzmann equation are applied. To improve the conductance and sensitivity, a Si-NW sensor with nanoscaie side gate voltage is offered and its characteristics are theoretically achieved. It is revealed that the conductance and sensor sensitivity can be enhanced by adding appropriate side gate voltages. This effect is compared to a similar fabricated structure in the literature, which has a wire with a rectangular cross section. Finally, the effect of NW length on sensor performance is investigated and an inverse relation between sensor sensitivity and NW length is achieved.     

Transport properties of a double quantum dot molecule in the presence of impurity effects

In this Letter, we studied the electronic transport through a parallel-coupled double quantum dot (DQD) molecule including impurity effects at zero temperature. The linear conductance can be calculated by using the Green's function method. An obvious Fano resonance arising from the impurity state in the quantum dot is observed for the symmetric dot-lead coupling structure in the absence of the magnetic flux through the quantum device. When the magnetic flux is presented, two groups of conductance peaks appear in the linear conductance spectra. Each group is decomposed into one Breit-Wigner and one Fano resonances. Tuning the system parameters, we can control effectively the shapes of these conductance peaks. The Aharonov-Bohm (AB) oscillation for the magnetic flux is also studied. The oscillation period of the linear conductance with π, 2π or 4π may be observed by tuning the interdot tunneling coupling or the dot-impurity coupling strengths.     

Anderson transition in 1D systems with spatial disorder

A simple Kronig-Penney model for 1D mesoscopic systems with δ peak potentials is used to study numerically the influence of spatial disorder on conductance fluctuations and distribution at different regimes. The Lévy laws are used to investigate the statistical properties of the eigenstates. It is found that an Anderson transition occurs even in 1D meaning that the disorder can also provide constructive quantum interferences. The critical disorder W_c for this transition is estimated. In these 1D systems, the metallic phase is well characterized by a Gaussian conductance distribution. Indeed, the results relative to conductance distribution are in good agreement with the previous works in 2D and 3D systems for other models. At this transition, the conductance probability distribution has a system size independent shape with large fluctuations in good agreement with previous works.     

Single electron tunneling at large conductance: The semiclassical approach

We study the linear conductance of single electron devices showing Coulomb blockade phenomena. Our approach is based on a formally exact path integral representation describing electron tunneling nonperturbatively. The electromagnetic environment of the device is treated in terms of the Caldeira-Leggett model. We obtain the linear conductance from the Kubo formula leading to a formally exact expression which is evaluated in the semiclassical limit. Specifically we consider three models. First, the influence of an electromagnetic environment of arbitrary impedance on a single tunnel junction is studied focusing on the limits of large tunneling conductance and high to moderately low temperatures. The predictions are compared with recent experimental data. Second, the conductance of an array of N tunnel junctions is determined in dependence on the length N of the array and the environmental impedance. Finally, we consider a single electron transistor and compare our results for large tunneling conductance with experimental findings. Received 2 February 2000     

Andreev reflection in a quantum dot coupled to ferromagnetic and superconductor leads under magnetic fields

By employing the nonequilibrium Green's function, we investigate the spin-dependent linear Andreev reflection (AR) resonant tunneling through a quantum dot connected to a ferromagnetic lead and a superconducting lead, where the magnetization direction in the ferromagnetic lead can be tuned by one. We focus our attention on the effects of the magnetic fields on the AR conductance. One high conductance peak and one low conductance peak are developed in the linear AR conductance when a stronger magnetic field is considered. The interplay between the spin-flip scattering and the magnetic fields on the AR conductance are also studied.