Tuning stress-induced magnetic anisotropy and high frequency properties of FeCo films deposited on different curvature substrates

It is important to control magnetic anisotropy of ferromagnetic materials. In this work, FeCo thin films are deposited on the curving substrates by electrochemical deposition to adjust the stress-induced magnetic anisotropy. The compressive stress is produced in the as-deposited films after the substrates are flattened. A simplified theoretical model of ferromagnetic resonance is utilized to measure the intrinsic magnetic anisotropy field and saturation magnetization. The results show that the stress-induced magnetic anisotropy and the resonance frequency increase with the increase of substrate curvature. The induced easy axis is perpendicular to the compressive stress direction.     

Comparison of parallel and perpendicular ferromagnetic resonance in an exchange-biased bilayer

We have investigated the ferromagnetic resonance spectra of an exchange-biased Ni₈₀Fe₂₀/CoO bilayer between room temperature and 4 K. Primary attention has been paid to the effect of the antiferromagnetic CoO film on the temperature-dependent resonance field shift of the ferromagnetic Ni₈₀Fe₂₀ film with respect to that of an unbiased film. At low temperatures, the field shift with the magnetic field applied perpendicular to the plane was determined to be more than twice the magnitude of the parallel field shift, and of the same sign, while an unoxidized single ferromagnetic film has much smaller parallel and perpendicular low-temperature shifts (here defined with respect to room temperature) of opposite sign. This observation implies that the anisotropy axis can rotate with the applied field, provided that the primary cause of the anisotropy is the interaction between the adjacent ferromagnetic and antiferromagnetic films. Since the perpendicular shift is more than a factor of two larger than the parallel field shift, the rotatable anisotropy is, in fact, anisotropic in this bilayer.     

Magnetic properties of Fe/ZnSe/Fe trilayers

The magnetic properties of Fe/Zn/Fe trilayers have been studied by ferromagnetic resonance and magnetization measurements. These measurements have been used to investigate the magnetic anisotropy of the iron layers and the magnetic coupling across the semiconductor spacer. The angular dependence of the resonance spectra has been measured in-plane and out-of-plane in order to deduce magnetic anisotropy constants of the samples. Experimental data were fitted by using an energy-density expression that includes bulk cubic anisotropy, growth-induced uniaxial in-plane anisotropy and perpendicular-surface anisotropy terms. A small ferromagnetic coupling is observed in the trilayers with spacer thickness up to .     

垂直磁各向异性自旋阀结构中的铁磁共振

本文在理论上研究了垂直磁各向异性自旋阀结构中磁场激发和调节的铁磁共振. 通过线性展开包含自旋转移矩项的Landau-Lifshitz-Gilbert方程,获得了磁场激发和调节的铁磁共振谱. 给出了共振线宽、共振频率和共振磁场随直流电流密度大小和方向以及直流磁场的变化关系. 通过调节直流电流密度的大小和方向,系统的有效阻尼可以达到最小. 关键词： 自旋阀 自旋转移矩 垂直磁各向异性 铁磁共振     

垂直场下磁性薄膜中的铁磁共振现象

将铁磁共振频率看成外磁场的函数, 讨论了垂直场下磁性膜中的铁磁共振现象. 结果显示: 当外磁场平行于膜面, 并考虑磁膜具有垂直磁晶各向异性情形时, 其磁共振频率随外磁场的变化分为高频支和低频支两种情况, 具体的依赖关系取决于磁膜内磁晶的各向异性; 当外磁场垂直于膜面, 其磁共振频率随外磁场的关系仅存在一支, 一般地, 磁共振频率随外磁场的增加单调地非线性减小, 但当立方磁晶各向异性场H_k1 与单轴磁晶各向异性场H_a之比值介于2/3 < H_k1/H_a <1时, 其磁共振频率随外磁场的增加单调增加, 这与相关的实验结果一致. 研究结果表明: 磁薄膜中有无垂直于膜面的磁各向异性可以通过其磁共振谱的测量进行辨析.     

Phase separation effects in charge-ordered Pr<Subscript>0.5</Subscript>Ca<Subscript>0.5</Subscript>MnO<Subscript>3</Subscript> thin film

Compressed Pr_0.5Ca_0.5MnO₃ films (250 nm) deposited on LaAlO₃ have been studied by Electron Spin Resonance technique under high frequency and high magnetic field. We show evidences for the presence of a ferromagnetic phase (FM) embedded in the charge-order phase (CO), in form of thin layers which size depends on the strength and orientation of the magnetic field (parallel or perpendicular to the substrate plane). This FM phase presents an easy plane magnetic anisotropy with an anisotropy constant 100 times bigger than typical bulk values. When the magnetic field is applied perpendicular to the substrate plane, the FM phase is strongly coupled to the CO phase whereas for the parallel orientation it keeps an independent ferromagnetic resonance even when the CO phase becomes antiferromagnetic.     

Ferromagnetic resonance in monocrystalline spin valves CoFeB/Ta/CoFeB and CoFeB films with perpendicular magnetic anisotropy

Orientation dependences of ferromagnetic resonance in a MgO/CoFeB/MgO/Ta film with one ferromagnetic layer (monolayer) and in a MgO/CoFeB/Ta/CoFeB/MgO/Ta spin valve containing two single-crystal ferromagnetic CoFeB layers divided by a nonmagnetic Ta layer (bilayer) were investigated. Analysis of the orientation dependences of the structures with perpendicular magnetic anisotropy allowed calculating constants of magnetic anisotropy and damping factors. Physical reasons underlying the differences between these parameters in one- and two-layered structures are discussed.     

铁磁共振法测磁各向异性

采用铁磁共振方法,研究了铁磁/反铁磁双层膜系统中,因交换耦合以及磁晶各向异性而产生的有效各向异性场.结果表明:被测系统有无交换偏置场以及其正负号性质等均能在共振谱中得到辨析.结果还显示:沿着不同结晶方向施加外磁场,共振场的行为与磁晶各向异性以及铁磁/反铁磁交换耦合作用而诱发的单向各向异性等密切相关.将共振频率的变化看成外磁场(包括其方向和大小)的函数,研究得到了单向各向异性,立方各向异性等对共振频率的影响,并同实验结果做了很好的比较. 关键词： 铁磁/反铁磁双层膜 交换耦合 铁磁共振 单向各向异性     

Interface biquadratic coupling and magnon scattering in exchange-biased ferromagnetic thin films grown on epitaxial FeF2

The magnetic anisotropy of ferromagnetic (FM) Ni, Co, and Fe polycrystalline thin films grown on antiferromagnetic (AF) FeF(2)(110) epitaxial layers was studied, as a function of temperature, using ferromagnetic resonance. In addition to an in-plane anisotropy in the FM induced by fluctuations in the AF short-range order, a perpendicular (biquadratic) magnetic anisotropy, with an out-of-plane component, was found which increased with decreasing temperature above the AF Neél temperature (T(N) = 78.4 K). This is a surprising result given that the AF's uniaxial anisotropy axis was in the plane of the sample, but is consistent with prior experimental and theoretical work. The resonance linewidth had a strong dependence on the direction of the external magnetic field with respect to in-plane FeF(2) crystallographic directions, consistent with interface magnon scattering due to defect-induced demagnetizing fields. Below T(N), the exchange bias field H(E) measured via FMR for the Ni sample was in good agreement with H(E) determined from magnetization measurements if the perpendicular out-of-plane anisotropy was taken into account. A low field resonance line normally observed at H ≈ 0, associated with domain formation during magnetization in ferromagnets, coincided with the exchange bias field for T < T(N), indicating domain formation with the in-plane FM magnetization perpendicular to the AF easy axis. Thus, biquadratic FM-AF coupling is important at temperatures below and above T(N).     

FMR and SMFMR investigation of epitaxial Fe/GaAs(0 0 1) thin films with Si and Ge overlayer

The magnetic anisotropy and magnetoelastic properties of epitaxial iron films prepared by DC magnetron sputtering on single crystal GaAs(0 0 1) substrate and covered with a protective Si or Ge layer have been investigated by means of the ferromagnetic resonance and strain-modulated ferromagnetic resonance. It has been shown that the uniaxial and cubic anisotropy constants as well as two magnetoelastic constants strongly depend on the thickness of the film. The surface components of the cubic anisotropy and magnetoelastic constants have been determined.     

Angular dependence of the photothermally modulated magnetic resonance in Gd thin films

In this paper we use electron spin resonance and photothermally modulated magnetic resonance techniques to investigate gadolinium thin films as a function of the orientation of the film surface with respect to the external magnetic field and of the temperature, around the magnetic phase transition temperature. We observe that, in the ferromagnetic phase, the resonance line is shifted up to higher external magnetic fields when the angle between the film surface and the field increases, revealing the magnetic anisotropy of the sample. At the same time, when the temperature is augmented to values higher than the phase transition temperature, the external field of the resonance collapses back to the expected value in the paramagnetic phase for all orientations. We also demonstrated that, even for the perpendicular orientation (magnetic field perpendicular to the sample surface), the photothermally modulated magnetic resonance signal is maximized near the magnetic phase transition temperature. Furthermore, in the ferromagnetic phase the photothermally modulated magnetic resonance intensity is very sensitive to the orientation, showing a significant enhancement in the perpendicular direction.     

Ferromagnetic resonance in metal films with angular dispersion of magnetic anisotropy

The specific features of the ferromagnetic resonance spectra of metal magnetic films due to the cubic crystalline anisotropy and induced uniaxial magnetic anisotropy have been studied using the statistical model of noninteracting blocks. It has been demonstrated that the inclusion of the angular dispersion of the fields of these magnetic anisotropies leads to a shift, asymmetry, and broadening of the integral resonance curve and to characteristic angular dependences of the resonance field and the resonance line width.     

希土离子对高功率铁磁共振的影响

本文利用关联函数方法(久保理论)来讨论高功率下铁磁共振中的非线性过程。对通常的铁磁晶体,目前的理论包含了由H.Suhl所发展起来的半经典理论的结果。对含希土离子的石榴石型铁氧体,给出了希土离子引起的自旋波的频率移动,附加的损耗,以及所谓纵向注入和横向注入的一级二级的非线性过程的临阈场。希土离子的存在使临阈场增大。一般而言,这一关系是很复杂的,但当希土离子含量很少的情形下,对临阈场的影响可归结为自旋波的损耗的增加,临阈场随温度的改变及各向异性完全与低功率下铁磁共振线宽的情况相似。对于现有的一些实验结果,理论作了定性的解释。     

Anisotropy and dynamic properties of Co2MnGe Heusler thin films

Co₂MnGe films of 30 and 50 nm in thickness were grown by RF-sputtering. Their magnetic anisotropies, dynamic properties and the different excited spin wave modes have been studied using conventional ferromagnetic resonance (FMR) and Microstrip line FMR (MS-FMR). From the in-plane and the out-of-plane resonance field values, the effective magnetization (4πM_eff) and the g-factor are deduced. These values are then used to fit the in-plane angular-dependence of the uniform precession mode and the field-dependence of the resonance frequency of the uniform mode and the first perpendicular standing spin wave to determine the in-plane uniaxial, the four-fold anisotropy fields, the exchange stiffness constant and the magnetization at saturation. The samples exhibit a clear predominant four-fold magnetic anisotropy besides a smaller uniaxial anisotropy. This uniaxial anisotropy is most probably induced by the growth conditions.     

Magnetic excitations in ferromagnetic semiconductors

Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors.     

“Switching” phase transition of the nanodomain state of the frustrated ferromagnet-antiferromagnet system

The phenomenon of switching of the domain walls generated by frustrations in a two-layer ferromagnet-antiferromagnet nanostructure has been studied theoretically taking into account the energy of the uniaxial anisotropy beyond the exchange approximation. This phenomenon manifests itself in the fact that, as the magnetic field increases, the ferromagnetic layer divided into nanodomains by domain walls perpendicular to the layer plane becomes single-domain, and the antiferromagnetic layer that is uniform in weak fields is divided into 180° domains by the domain walls perpendicular to the layer. The phase diagram of the two-layer nanostructure has been constructed in the variables “the magnetic field-the characteristic distance between atomic step edges at the interface between the layers.”     

Magnetic nanostructures as amplifiers of transverse fields in magnetic resonance

We introduce the concept of amplifying the transverse magnetic fields produced and/or detected with inductive coils in magnetic resonance settings by using the reversible transverse susceptibility properties of magnetic nanostructures. First, we describe the theoretical formalism of magnetic flux amplification through the coil in the presence of a large perpendicular DC magnetic field (typical of magnetic resonance systems) achieved through the singularity in the reversible transverse susceptibility in anisotropic single domain magnetic nanoparticles. We experimentally demonstrate the concept of transverse magnetic flux amplification in an inductive coil system using oriented nanoparticles with uni-axial magnetic anisotropy. We also propose a composite ferromagnetic/anti-ferromagnetic core/shell nanostructure system with uni-directional magnetic anisotropy that, in principle, provides maximal transverse magnetic flux amplification.     

Investigation of ferromagnetic resonance and damping properties of CoFeB

In this study, the influences of thin film thickness and post-annealing process on the magnetic properties of CoFeB thin films were investigated. The angular dependency and linewidth of the ferromagnetic resonance signal were used to explore the magnetic behavior of sputtered single-layer and trilayer thin film stacks of CoFeB. A micromagnetic simulation model was employed based on the metropolis algorithm comprising the demagnetizing field and in-plane induced uniaxial anisotropy terms with all relevant contributions. Our results reveal that the direction of magnetization changes from in-plane to out-of-plane as a result of the annealing process and induces a perpendicular magnetic anisotropy in the 1-nm thick CoFeB thin film. The ferromagnetic resonance (FMR) linewidth can be defined well by the intrinsic Gilbert damping effect and the magnetic inhomogeneity contribution in both as-grown and annealed samples. The difference between the linewidths of the single and trilayer film is mainly caused by the spin pumping effect on damping which is associated with the interface layers.     

Singularity in high-frequency susceptibility of thin magnetic films with uniaxial anisotropy

A sharp peak of magnetic susceptibility has been observed in the ferromagnetic resonance spectra of uniaxial magnetic films placed in a planar field directed orthogonal to the easy magnetization axis, along which a pumping high-frequency magnetic field has been oriented. The peak width is considerably narrower than the line width of the uniform ferromagnetic resonance, and its position in a field equal to the film anisotropy field does not depend on the pumping frequency. The nature of the peak is associated with a drastic increase in the static transverse susceptibility of the film in the vicinity of the anisotropy field. It is shown phenomenologically that the peak can be observed only for quality samples with small angular and amplitude dispersion of the uniaxial anisotropy.