Ferromagnetism of zinc oxide nanograined films

The reasons for the appearance of ferromagnetic properties of zinc oxide have been reviewed. It has been shown that ferromagnetism appears only in polycrystals at a quite high density of grain boundaries. The critical size of grains is about 20 nm for pure ZnO and more than 40 μm for iron-doped zinc oxide. The solubility of manganese and cobalt in zinc oxide increases significantly with a decrease in the size of grains. The dependences of the saturation magnetization on the concentrations of cobalt, manganese, and ion are nonmonotonic. Even if the size of grains is below the critical value, the ferromagnetic properties of zinc oxide depend significantly on the texture of films and the structure of amorphous intercrystallite layers.     

Ferromagnetism in transition-metal-doped semiconducting oxide thin films

A rather complete work on transition-metal (TM)-doped TiO₂ thin films has been done and room ferromagnetism (FM) is found in the whole series of Sc/V/Cr/Mn/Fe/Co/Ni-doped TiO₂ films. Not only is it remarkable that for the first time, FM at high temperature was achieved in TM-doped TiO₂, but also a very big magnetic moment of 4.2μ_B/atom could be obtained, and direct evidences of real ferromagnets with big domains were shown as well. A similar chemical trend was achieved in TM-doped In₂O₃ films, however, the observed magnetic moment is rather modest, with the maximal value is of only 0.7μ_B/atom for Ni-doped In₂O₃ films. As regards TM-doped SnO₂ films, observed magnetic moments could be very large, with the maximum saturation of 6μ_B per impurity atom for Cr-doped SnO₂ thin films, but it could be influenced very much depending on substrate types. On the other hand, results on TM-doped ZnO films interestingly have revealed that in these systems, the magnetism more likely resulted from defects and/or oxygen vacancies.     

Ferromagnetism in carbon-doped ZnO films from first-principle study

First-principle calculations based on density functional theory have been performed on the nonmagnetic 2p light element C-doped ZnO thin films. The total energies and magnetism of the system are calculated with a ten-layer slab along () direction. The results show that the C-doped ZnO thin films are ferromagnetic. A single C is preferable to occupy the subsurface site. As the concentration of C atoms increases, the ferromagnetic coupling among the dopants is more favorable, and they tend to form a cluster around the Zn atom at the film surface. The ferromagnetism is predicted to be mainly from a p-d exchange-like p-p coupling interaction and a p-d exchange hybridization. The p-p coupling interaction is the dominative mechanism.     

Ferromagnetism of 3He films in the low-field limit

We provide evidence for a finite-temperature ferromagnetic transition in two dimensions as H -->0 in thin films of 3He on graphite, a model system for the study of two-dimensional magnetism. We perform pulsed and cw NMR experiments at fields of 0.03-0.48 mT on 3He at areal densities of 20.5-24.2 atoms/nm(2). At these densities, the second layer of 3He has a strongly ferromagnetic tendency. With decreasing temperature, we find a rapid onset of magnetization that becomes independent of the applied field at temperatures in the vicinity of 1 mK. Both the dipolar field and the NMR linewidth grow rapidly as well, which is consistent with a large (order unity) polarization of the 3He spins.     

Ferromagnetism in carbon-doped In2O3 thin films

Carbon-doped In₂O₃ thin films exhibiting ferromagnetism at room temperature were prepared on Si (100) substrates by the rf-magnetron co-sputtering technique. The effects of carbon concentration as well as oxygen atmosphere on the ferromagnetic property of the thin films were investigated. The saturated magnetizations of thin films varied from 1.23 to 4.86 emu/cm³ with different carbon concentrations. The ferromagnetic signal was found stronger in samples with higher oxygen vacancy concentrations. In addition, deposition temperature and different types of substrates also affect the ferromagnetic properties of carbon-doped In₂O₃ thin films. This may be related to the oxygen vacancies in the thin film system. The experiment suggests that oxygen vacancies play an important role in introducing ferromagnetism in thin films.     

Ferromagnetism of Dy films containing embedded Fe atoms and nanoparticles

We have studied the magnetic behaviour of polycrystalline dysprosium films grown in their pure state and containing Fe impurity. The films were grown by MBE in ultra-high vacuum and Fe impurity was introduced either as Fe atoms from a conventional MBE source or as 1.8 nm diameter Fe nanoparticles from a gas aggregation source. We show that with a suitable magnetothermal history it is possible to produce a large thermal hysteresis up to room temperature in all samples. In the Dy ferromagnetic state both types of Fe impurity cause a reduction in the observed magnetisation but the reduction of average moment observed in the case of the Fe nanoparticles is much greater than that for atoms for a similar quantity of Fe. Despite the low solubility of Fe in Dy EXAFS data clearly indicates alloying in the case of embedded Fe nanoparticles. We attribute the low moment in the Dy films containing nanoparticles to alloying within the particles producing a significant proportion of high-Fe-concentration Dy-Fe alloy.     

Ferromagnetism in polycrystalline Cr-doped ZnO films: Experiment and theory

Room-temperature ferromagnetism is found in polycrystalline Cr_xZn_1−xO (0≤x≤0.091) films prepared by magnetron sputtering. The saturated magnetization is 0.58 μ_B/Cr with x=0.012, and decreases with increased Cr dopant. The Curie temperatures of the samples are above 400 K. First principles calculations based on density functional theory predict that the electrons of Cr-doped ZnO films at Fermi level are 100% spin polarized when two Zn sites are substituted by Cr atoms in the nearest neighbour configuration. The spin polarized carriers and the p–d hybridization between Cr and its four neighbouring O atoms are responsible for observed ferromagnetism.     

Growth induced anisotropy of cobalt in cobalt/organic semiconductor films

We present the study of Co/organic semiconductor (OS) stacks both from the morphological and magnetic point of view. Co has been successfully used up to now as top contact of hybrid vertical devices. While the properties of Co grown on amorphous layers are well established, its deposition on soft materials presents critical aspects such as interfacial damage that affects its electrical and magnetic properties. In this work we focus on the influence of the morphology of the organic underlayer in the magnetic behavior of a Co thin film: tris(8-hydroxyquinoline) aluminum (Alq₃) grown in different conditions by molecular beam evaporation have been considered. A further considered aspect is the effect of the presence of a thin oxide barrier (Al₂O₃) on the Co magnetic properties.     

Ferromagnetism in noncompensated (Mn,Ga)-codoped ZnO films

Mn/Ga noncompensated codoped ZnO films were prepared on c-cut sapphire substrates via pulsed laser deposition. The structural, magnetic, transport, and optical properties of the films were then investigated. Addition of the Ga donor increases the electron concentration and enhances the magnetization in these films because of the net negative charge of the special noncompensated codoping, which can adjust the carrier concentration as well as the magnetic moment. Moreover, the Fermi level moves into the conduction band because of the increase in electron concentration, which results in an increase in the optical band gap value, from 3.28 eV for the undoped ZnO film to 3.61 eV for the (Mn,Ga)-codoped ZnO film.     

Ferromagnetism driven by cation vacancy in GaN thin films and nanowires

The first-principles calculations have been performed to understand the origin of magnetism in undoped GaN thin films. The results show that Ga vacancy, rather than that of N contributes the observed magnetism, and the magnetic moments mainly come from the unpaired 2p electrons at nearest-neighbor N atoms of the Ga vacancy. Calculations and discussions are also extended to bare and passivated GaN nanowires, We find that per Ga vacancy on the surface sites products the total magnetic moment of 1.0  while that inside of the nanowires can lead to the formation of a net moment of 3.0 . The coupling between two Ga vacancies is also studied and we found that the coupling is ferromagnetic coupling. The surface passivation with hydrogen is shown to strongly enhance the ferromagnetism. Our theoretical study not only demonstrates that GaN nanowire can be magnetic even without transition-metal doping, but also suggests that introducing Ga vacancy is a natural and an effective way to fabricate low-dimensional magnetic GaN nanostructures.     

多晶Si0.9654Mn0.0346:B薄膜的磁性研究

利用磁控溅射和快速热处理的方法制备了Mn,B共掺的多晶硅薄膜(Si0.9654Mn0.0346:B).磁性和结构研究发现薄膜有两个铁磁相.低温铁磁相来源于杂相Mn4Si7,高温铁磁相(居里温度TC～250K)是由Mn原子掺杂进入Si晶格导致.晶化后的薄膜利用射频等离子体增强化学气相沉积系统(PECVD)进行短暂(4min)的氢化处理后发现,薄膜的微结构没有发生变化而饱和磁化强度却随着载流子浓度的增大而增大.样品的饱和磁化强度和载流子浓度密切相关为验证在硅基磁半导体中磁性是以空穴为媒介的这一理论提供了有力的证据.     

Ferromagnetism in epitaxial orthorhombic YMnO3 thin films

Epitaxial orthorhombic YMnO₃ thin films, (0 0 1) oriented, have been grown by pulsed laser deposition on (0 0 1)SrTiO₃ substrates. Their crystal structure and magnetic response have been studied in detail. Although bulk o-YMnO₃ is antiferromagnetic, our magnetic measurements reveal intriguing thermal hysteresis between the zero-field-cooled and field-cooled curves below the onset of the antiferromagnetic ordering temperature, thus signaling a more complex magnetic structure with net ferromagnetic moments. We discuss on the possible origin of this net magnetization and we have found a correlation of the magnetic response with the strain state of the films. We propose that substrate-induced strain modifies the subtle competition of magnetic interactions and leads to a non-collinear magnetic state that can thus be tuned by strain engineering.     

Ferromagnetism of MnAs studied by heteroepitaxial films on GaAs(001)

Thin epitaxial films of MnAs--promising candidates for the spin injection into semiconductors--are well known to undergo simultaneously a first-order structural and magnetic phase transition at 10-40 degrees C. The evolution of stress and magnetization of MnAs/GaAs(001), both measured quantitatively with our cantilever beam magnetometer at the coexistence region of alpha-MnAs and beta-MnAs, reveal an orthorhombically distorted unit cell of the ferromagnetic phase, which provides important clues on the origin of ferromagnetism in MnAs.     

Ferromagnetic resonance in thin cobalt films

The paper gives the results of measuring ferromagnetic resonance on thin cobalt films, vacuum deposited on unheated glass slides. The values of the (g-factor, the width of the curve, the effective stress and uniaxial induced anisotropy were determined as a function of the thickness of the film from measurements of the ferromagnetic absorption in a magnetic field normal and parallel to the surface of the film. Measurements were carried out on a frequency of 9200 MHz and on film thicknesses of 180 to 1800 Å. A qualitative explanation of the observed dependences is given.

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, . , , g-, , , . 9200 MHz 180–1800 Å. .

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The author thanks V. Kamberský and Z. Málek, C. Sc., for providing some of the cobalt films and for help in depositing and measuring the thicknesses, S. Kadeková and M. Polcarová for valuable advice in determining the structure of the films, J. Míová for carefully plotting the results of measurements and Z. Málek and O. tirand for carefully reading the paper and for valuable discussions.     

Adsorption of hydrogen on evaporated cobalt films

Hydrogen adsorption on evaporated Co films has been studied by means of measurements of the surface potential changes that occur during this process, and analysis of the desorption spectrum of hydrogen. It has been observed that hydrogen adsorbed at 78 K on Co films exists in three forms with essentially different electrical properties: atomic, electronegatively polarized β^? form; atomic, electropositively polarized β⁺ form and reversibly adsorbed, molecular, positively polarized α form. The β^? form is not homogeneous from the point of view of the bond energy with the metal surface and consists of the states β_s^? and β^? characterized by activation energy of desorption 10.0 and 18.8 kcal/mol H₂ correspondingly. The Activation energy of desorption of the β⁺ form is low, i.e. 2.1 $\text{kcal}\text{mol}$ H₂.