用深能级瞬态谱方法研究赝晶Si/Ge0.25Si0.75/Si单量子阱的价带偏移

应变的Ge_xSi_1-x层和未应变的硅层间的能带偏移主要是价带偏移。量子阱中载流子的热发射能与界面的能带偏移有着密切的关系。本文用深能级瞬态谱(DLTS)研究分子束外延生长的p型Si/Ge_0.25Si_0.75/Si单量子阱的价带偏移,阱宽为15nm,考虑到电场的影响和量子阱中第一子能级的位置,对从DLTS得到的热发射能进行适当的修正,可以计算出Si/Ge_0.25Si_0.75/S 关键词：     

ZnO薄膜的椭偏和DLTS特性

用射频磁控溅射在硅衬底上淀积氧化锌薄膜,并对样品分别作氮气、空气、氧气等不同条件下退火处理。为研究退火气氛对ZnO/Si薄膜中缺陷以及折射率的影响,由深能级瞬态谱(DLTS)以及椭偏测量方法进行了检测。椭偏测量结果表明相对原始生长的样品,在氮气和空气退火使ZnO薄膜折射率下降,但氧气中退火使折射率升高。我们对折射率的这种变化机理进行了解释。DLTS测量得到一个与Zni**相关的深能级中心E1存在,氧气气氛退火可以消除E1能级。在氮气退火情况下Zn*i*的存在对抑制VO引起的薄膜折射率下降有利。     

硅n+p结中金的两个深能级及相对浓度分布的测量

本文用深能级瞬态谱(DLTS)方法对p型单晶硅中n⁺p结掺金形成的两个深能级进行了实验研究,并对DLTS方法中传统计算深中心浓度分布的公式进行了改进,给出了深能级及相对浓度分布更为准确的测量结果。     

GaP发光二极管中深能级对发光强度的影响研究

应用深能级瞬态谱(DLTS)技术,研究了GaP发光二极管中Zn-O对深能级,并计算出了其能级的激活能。GaP红色发光二极管经过γ射线长时间辐照后,其Zn-O对的浓度和发光管发光强度发生了变化。结果表明,经γ射线辐照后,GaP红色发光二极管中的Zn-O对的浓度增大,发光强度增强。它为提高GaP红色发光二极管的发光效率提供了一种新的方法。     

Ni+注入n-GaPDLTS谱中Ni杂质能级的识别

在不同条件下退火的Ni+注入n-GaPDLTS谱中观测到表观激活能在0.60～0.70eV范围内的多个多子峰和少子峰。对各样品掺杂层内的能带弯曲及Ni杂质各荷电状态浓度空间分布在DLTS测量的零偏-反偏过程中的变化进行了计算。结合分析实测各能级热发射率数据,对其中起源于NiGa中心的DLTS峰作出了判断。     

注氮GaAs中的深能级及其对自由载流子的补偿

详细研究了注氮n型GaAs中深的和浅的杂质缺陷的电学性质。深能级瞬态谱(DLTS)技术测量表明,能量为140keV和剂量为1×10¹³cm^-2的氮离子注入并经800℃退火30min的GaAs中存在四个电子陷阱,E₁(0.111),E₂(0.234),E₃(0.415),E₄(0.669)和一个空穴陷阱H(0.545),而在能量为20keV和剂量为5×10^{14关键词：}     

注硅半绝缘GaAs的深能级

用深能级瞬态谱(DLTS)详细研究了硅离子注入Liquid-encapsulated Czochralski(缩写为LEC)半绝缘GaAs的深中心。结果表明,在注硅并经高温退火的有源区中观测到4个多子(电子)陷阱,E₀₁,E₀₂,E₀₃和E₀₄。它们的电子表观激活能分别为0.298,0.341,0.555和0.821eV。其中E₀₄与EL2有关,但不是EL2缺陷。E₀₄的电子 关键词：     

分子束外延生长的赝配高电子迁移率晶体管结构中深能级的研究

应用深能级瞬态谱(DLTS)技术详细研究分子束外延生长的Pseudomorphic—high electron mobility transistor(P-HEMT)结构中深能级行为。样品的DLTS表明,在P-HEMT结构的n-AlGaAs层里存在着较大浓度(10¹⁵-10¹⁷cm^-3和俘获截面(10^-16cm²)的高温电子陷阱。它们直接影响着器件性能。高温电子陷阱的产生可能与AlGaAs层里的氧     

p型硅MOS结构Si/SiO2界面及其附近的深能级与界面态

用深能级瞬态谱(DLTS)技术系统研究了Si/SiO₂界面附近的深能级和界面态。结果表明,在热氧化形成的Si/SiO₂界面及其附近经常存在一个浓度很高的深能级,它具有若干有趣的特殊性质,例如它的DLTS峰高度强烈地依赖于温度,以及当栅偏压使费密能级与界面处硅价带顶的距离明显小于深能级与价带顶的距离时,仍然可以观测到一个很强的DLTS峰。另外,用最新方法测量的Si/SiO₂界面连续态的空穴俘获截面与温度有关,而与能量位置无明显关系,DLTS测 关键词：     

MBE生长的垂直堆垛InAs量子点及HFET存储器件的应用

用MBE设备以Stranski-Krastanov生长方式外延生长了5个周期垂直堆垛的InAs量子点，在生长过程中通过对量子点形状，尺寸的控制来提高垂直堆垛InAs量子点质量和均匀性，用原子力显微镜（AFM）进行表面形貌的表征，并利用光致发光（PL）和深能级瞬态谱（DLTS）对InAs量子点进行观测。所用Al0.5Ga0.5As势垒外延层，对镶嵌在其中的InAs量子占粗很强的量子限制作用，并产生强量子限制效应，可以把InAs量子点的电子和空穴能级的热激发当作“深能级”的热激发来研究，这样可用DLTS方法进行测量，在垂直堆垛的InAs量子点的HFET器件中，由充电和放电过程的IDS－VGS曲线可以看到阈值电压有非常大的移动，这样便产生存储效应。     

Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots

We have studied the effects of thermal annealing on the electrical properties of InAs/InP self-assembled quantum dots (QDs) using deep level transient spectroscopy (DLTS). It was found from the DLTS measurements that the activation energy of the QD signal varied from 0.47 to 0.60 eV and the emission cross section changed from 1.01×10⁻¹⁵ to 9.63×10⁻¹⁴ cm² when the annealing temperature increased up to 700 °C. As a result of the thermal annealing process at the temperature ranging from 500 to 600 °C, the higher activation energy and the larger emission cross section of the QD related signal were observed for the annealed samples compared to those for the as-grown sample. On the basis of the capture barrier height for the QDs structure being lowered from 0.24 to 0.06 eV at the annealing temperature of 700 °C, thermal damage was considered as the reason. The appropriate annealing process can provide a clue for the engineering of the energy levels in the self-assembled QD structures.     

Effects of hydrostatic pressure on the donor impurity in a cylindrical quantum dot with Morse confining potential

The effects of hydrostatic pressure and size quantization on the binding energies of a hydrogen-like donor impurity in cylindrical GaAs quantum dot (QD) with Morse confining potential are studied using the variational method and effective-mass approximation. In the cylindrical QD, the effect of hydrostatic pressure on the binding energy of electron has been investigated and it has been found that the application of the hydrostatic pressure leads to the blue shift. The dependence of the absorption edge on geometrical parameters of cylindrical QD is obtained. Selection rules are revealed for transitions between levels with different quantum numbers. It is shown that for the radial quantum number, transitions are allowed between the levels with the same quantum numbers, and any transitions between different levels are allowed for the principal quantum number.     

An investigation of metal/GaAs(100) interfaces by deep level transient spectroscopy

In this work we investigate the ability of DLTS to detect the presence of interface states at metal/GaAs(100) (n-type) interfaces where the semiconductor surface has been prepared by two different procedures. A correlation is observed between the magnitude of the ideality parameter determined from the current-voltage (I-V) characteristic of the diode and presence in the DLTS spectrum of a feature attributable to interface states. Schottky diodes have been fabricated with both gold and iron contacts which exhibit near ideal behaviour (n<1.1). No interface states were detected by DLTS on either of these diodes. However, diodes fabricated on oxidised GaAs surfaces, with higher idealities (1.5 <n < 2), exhibit additional electron trap levels in the DLTS spectrum. For the case of iron, a deep level of activation energy 0.55 eV is observed in the conventional reverse bias pulse sequence mode of DLTS operation. In addition, for both gold and iron diodes, a spectral feature which can be attributed to a broad distribution of interface states within the deplation region is observed during a forward bias pulse sequence.     

Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs

The comprehensive optical-electrical-thermal-recombination self-consistent simulation of an operation of quantum-dot (QD) VCSELs is used to optimise their structure for GaAs-based oxide-confined QD VCSELs predestinated for the second-generation 1.3-μm optical-fibre communication. It has been found that, contrary to a general belief of lasing thresholds of QD lasers inversely proportional to their density, for any design of QD VCSELs, there exists an optimal QD density ensuring its lowest lasing threshold. Besides, in intentionally strongly detuned QD VCSELs, to reach the desired 1.30-μm radiation, it is superfluous to improve uniformity of their QDs because their lasing thresholds are surprisingly distinctly lower for less uniform QDs. Then for these devices more optimal are somewhat non-uniform QDs and a necessary optical gain may be achieved with the aid of an increasing QD density.     

Electrical and optical analyses of Er-doped silicon grown by liquid-phase epitaxy

We have studied the deep levels present in Er-doped silicon epilayers grown by the liquid-phase epitaxy method by deep level transient spectroscopy (DLTS) and optical DLTS, in order to identify the majority and minority carrier traps and a possible correlation between these traps and the observed photoluminescence (PL) and cathodoluminescence (CL) spectra. Capacitance–voltage analyses have been performed to analyze uniformity and depth distribution of the existing traps and marked differences have been observed between the luminescent and non-luminescent materials.The PL and depth resolved CL revealed the presence of dislocation-related emission lines which can possibly be correlated to the broadened peaks observed in DLTS analyses of luminescent material.     

Observation of Overhauser shift in a self-assembled InAlAs quantum dot

We report the polarization-dependent energy shift of excitonic emission in a self-assembled InAlAs/AlGaAs quantum dot (QD). The energy shift is well known as Overhauser shift and was observed in a naturally formed GaAs QD using monolayer fluctuation of a quantum well. However, there has been no observation so far in a self-assembled QD, which is suitable for formation of vertically coupled QDs. We demonstrate that the magnitude of the Overhauser shift is enhanced by the photo-injection of the highly polarized electron and is controllable by the polarization of the excitation light in a self-assembled InAlAs QD.     

Interface and propagating optical phonon mixing modes in a wurtzite GaN-based quantum dot

The polar optical phonon vibrating modes of a quasi-zero-dimensional (Q0D) wurtzite cylindrical quantum dot (QD) are solved exactly based on the dielectric continuum model and Loudon’s uniaxial crystal model. The result shows that there exist four types of polar mixing optical phonon modes in the Q0D wurtzite cylindrical QD systems, which is obviously different from the situation in blende cylindrical QDs. The dispersive equations for the interface-optical-propagating (IO-PR) mixing modes are deduced and discussed. It is found that the dispersive frequency of IO-PR mixing modes in wurtzite QD just take a series of discrete values due to the three-dimensional confined properties. Moreover, once the radius or the height of the QD approach infinity, the dispersive equations of the IO-PR mixing modes in the wurtzite Q0D cylindrical QD can naturally reduce to those of the IO and PR modes in Q2D QWs or Q1D QWWs systems. This has been analyzed reasonably from both physical and mathematical viewpoints. The analytical expressions obtained in the paper are useful for further investigating phonon influence on physical properties of the wurtzite Q0D QD systems.     

DLTS studies of deep levels in semiconducting N-CdTe single crystals

Deep levels created by annealing of Al-doped n-CdTe single crystals have been studied by the Deep Level Transient Spectroscopy (DLTS) technique. Eight levels have been detected in the energy range from 0.04 to 0.07 eV below the conduction band edge. The thermal ionization energies and the capture cross sections for electrons in these levels have been obtained. The dependence of concentrations of the levels on the Cd vapor pressure during annealing and on the cooling process after annealing has been determined.     

Anisotropy Effects on Polar Optical Vibrations in a Freestanding Wurtzite Cylindrical Quantum Dot

The properties of polar optical phonon vibrations in a quasi-zero- dimensional (Q0D) anisotropic wurtzite cylindrical quantum dot (QD) are analyzed based on the dielectric continuum model and Loudon's uniaxial crystal model.The analytical electrostatic potentials of the phonon vibrations in the systems are deduced and solved exactly. The result shows that there exist four types of polar mixing optical phonon modes in the Q0D wurtzite cylindrical QD systems. The dispersive equations and electron-phonon coupling function for the quasi-confined-half-space (QC-HS) mixing modes are derived and discussed. It is found that once the radius or the height of the QD approach infinity, the dispersive equations of the QC-HS mixing modes in the Q0D cylindrical QD can naturally reduce to those of the QC and HS modes in Q2D QWs or Q1D QWWs systems. This has been analyzed reasonably from both of physical and mathematical viewpoints.     

Anisotropy Effects on Polar Optical Vibrations in a Freestanding Wurtzite Cylindrical Quantum Dot

The properties of polar optical phonon vibrations in a quasi-zero- dimensional （QOD） anisotropic wurtzite cylindrical quantum dot （QD） are analyzed based on the dielectric continuum model and Loudon＇s uniaxial crystal model. The analytical electrostatic potentials of the phonon vibrations in the systems are deduced and solved exactly. The result shows that there exist four types of polar mixing optical phonon modes in the QOD wurtzite cylindrical QD systems. The dispersive equations and electron-phonon coupling function for the quasi-confined-half-space （QC-HS） mixing modes are derived and discussed. It is found that once the radius or the height of the QD approach infinity, the dispersive equations of the QC-HS mixing modes in the QOD cylindrical QD can naturally reduce to those of the QC and HS modes in Q2D QWs or Q1D QWWs systems. This has been analyzed reasonably from both of physicM and mathematical viewpoints.