Near Infrared Photoluminescence from Yb,Al Co-implanted SiO2 Films on Silicon

Intense room-temperature near infrared （NIR） photoluminescence （980 nm and 1032 nm） is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the ^2F5/2 and ^2F7/2 levels of Yb^3＋ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb^3＋ in SiO2. Photoluminescence excitation spectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb^3＋ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminescence of rare-earth ions in SiO2 is very effective.     

Investigating the formation and magnetic properties of the Dy0.75Fe1.25O3 orthoferrite prepared by sol-gel method

In this paper, the Dy_0.75Fe_1.25O₃ orthoferrite nanoparticles were synthesized successfully by sol-gel method. Dy_0.75Fe_1.25O₃ orthoferrite nanoparticles are obtained by calcining the flakes at 600 and 700 °C. The magnetic properties of the different samples are investigated using Quantum Design MPMS SQUID magnetometer and MS-500 Mössbauer spectrometer. Magnetic phase γ-Fe₂O₃ coexists in the samples calcined at 600 °C and orthoferrite phase is completely recovered in the samples calcined at 700 °C. Although excessive Fe³⁺ ions were introduced, none of these iron spins couple magnetically with Dy³⁺ ions.     

Flux-enhanced monochromator by ultrasound excitation of annealed Czochralski-grown silicon crystals

The neutron flux from monochromator crystals can be increased by ultrasound excitation or by strain fields. Rocking curves of both a perfect float-zone silicon crystal and an annealed Czochralski silicon crystal with oxygen precipitates were measured at various levels of ultrasound excitation on a cold-neutron backscattering spectrometer. We find that the effects of the dynamic strain field from the ultrasound and the static strain field from the defects are not additive. Rocking curves were also taken at different ultrasound frequencies near resonance of the crystal/ultrasound-transducer system with a time resolution of 1 min. Pronounced effects of crystal heating are observed, which render the conditions for maximum neutron reflectivity delicate. Received: 19 October 2001 / Accepted: 7 March 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. E-mail: andreas.magerl@krist.uni-erlangen.de     

High-dose carbon implantations into silicon: fundamental studies for new technological tricks

Depending on the implantation temperature, the implantation of carbon ions into silicon at high doses results in the formation of either amorphous SiC_x or crystalline 3C-SiC precipitates. Various aspects of the precipitation behaviour observed, such as the impeded nucleation, the limited growth and the resulting sensitivity to ballistic destruction are attributed to the large interfacial energy between crystalline silicon and 3C-SiC. Periodically arranged amorphous SiC_x nanoclusters, which are formed at lower temperatures, are shown to promote amorphisation by their surrounding stress field and to represent sinks for silicon self-interstitials, which can be activated by annealing at 900 °C. By control of the depth distribution of equally sized, oriented 3C-SiC precipitates formed at higher implantation temperatures, it is possible to establish suitable starting conditions for the formation of buried homogeneous, single-crystalline 3C-SiC layers during a post-implantation anneal. The properties of these ion-beam-synthesised SiC layers are described and attempts to combine them with insulating and metallic layers are reviewed. A survey is given of the emerging applications of ion-beam-synthesised buried SiC layers and microstructures in electronic, optical and micromechanical devices and as large-area SiC pseudosubstrates. Received: 11 November 2002 / Accepted: 12 November 2002 / Published online: 4 April 2003 RID="*" ID="*"Corresponding author. Fax: +49-821/598-3425, E-mail: lindner@physik.uni-augsburg.de     

Spectroscopy of YVO4:Ho3+ crystals

Crystals of YVO₄:Ho were grown by the Czochralski method. The structure of the low-energy levels of Ho³⁺ has been estimated experimentally. Intensity parameters, radiative lifetimes, and branching ratios have been calculated in the framework of the Judd–Ofelt theory. The influence of temperature on luminescence lifetimes has been investigated. The calculated nonradiative transition rate was compared with the energy-gap law. The potential laser gain for the ⁵ I ₇–⁵ I ₈ transition has been estimated. Received: 27 June 2001 / Final version: 10 December 2001 / Published online: 7 February 2002     

A compounded rare-earth iron garnet single crystal exhibiting stable Faraday rotation against wavelength and temperature variation in the 1.55 μm band

The Bi, Tb and Yb partially substituted iron garnet bulk single crystals of Tb_3−x−yYb_yBi_xFe₅O₁₂ were grown by using Bi₂O₃/B₂O₃ as flux and accelerated crucible rotation technique for single-crystal growth. Faraday rotation (FR) spectra showed that the specific FR of the (Tb_0.91Yb_1.38Bi_0.71)Fe₅O₁₂ crystal under magnetic field at saturation was measured to be about −1617°/cm at λ=1.55 μm, Faraday rotation wavelength coefficient (FWC, 0.009%/nm) in the wavelength range of 1.50–1.62 μm and Faraday rotation temperature coefficient (FTC, 3.92×10⁻⁵/K) at λ=1.55 μm were even smaller than that of YIG. It is proven that through combining two types of Bi-substituted rare-earth iron garnets with opposite FWC and FTC signs, the compound rare-earth iron garnets with low FWC and FTC may be obtained due to the compensation effect. The saturation magnetization of (Tb_0.91Yb_1.38Bi_0.71) Fe₅O₁₂ crystal is 0.48×10⁶ A/M and is also much smaller than that of YIG. We have found empirically that there is a simple relationship between the FR θ_f(x) and Bi content x for Tb_3−x−yYb_yBi_xFe₅O₁₂, which is given by θ_f(x)=(−2759x+400)°/cm.     

Dopant diffusion and segregation in semiconductor heterostructures: Part 2. B in GexSi1-x/Si structures

x Si_1-x/Si heterostructures have been obtained. Here the chemical effects seem to be of less importance. The Fermi-level effect determines the ionized boron solubilities in Ge_xSi_1-x and in Si, as well as the thermal equilibrium concentration of the singly-positively-charged crystal self-interstitials I⁺ which governs the boron diffusion process. The junction carrier concentration affects the concentration of I⁺ and solubility of B in the region and hence controls B diffusion across the heterojunction. Received: 20 August 1998/Accepted: 23 September 1998     

Influence of Zn Ions Codoping on Luminescence Properties of PbWO4:RE(RE=La, Yb, Y)

Zn and RE (RE=La, Yb, Y) ions co-doped PbWO₄ (PWO) single crystal grown by the Czochralski technique are characterized by x-ray diffraction (XRD), opticaltransmission spectra, and photoluminescence (PL). The doping of Zn ions shows distinct effects on the properties of PWO:RE crystals. At low concentration of Zn ions (200ppm), the luminescence intensity is quite weak for (Zn,La)-doped PWO, but is substantially strong for (Zn,Yb)-doped PWO. The blue luminescence intensity is significantly enhanced with the increasing Zn ions doping for PWO:Y. The trivalent ions codoping can increase the ratio of the blue luminescence contributing to the fast components of light yield. Ybions can enhance efficiency of luminescence in PWO:Yb:Zn because they may act as a luminous sensitization agent which can be involved in the efficient energy transfer and storage of the radiative process.     

MeV Al+ and Al2+ ions implantation in Si(100): surface roughness and defects in the bulk

This paper deals with the implantation of high-energy (1.0–3.0 MeV) atomic and molecular Al⁺ ions in Si(100) to a fluence of 5×10¹⁴ Al atoms/cm² at room temperature. The molecular effect, i.e. the increase of the displacement yield compared with the sum of the atomic yields, and the damage formation as well as defect behaviour after annealing have been investigated. A detailed experimental study has been made of the evolution of extended secondary defects which form during thermal anneals of Al⁺ or Al₂ ⁺ irradiated silicon. The samples have been examined using combined Rutherford backscattering and channeling experiments together with transmission electron microscopy observations. The surface structure of the implanted wafers has been measured by atomic force microscopy. The results for the implantation-induced roughness at the Si surface, resulting from Al⁺ or Al₂ ⁺ irradiation at the same energy/atom, total atomic fluence, flux rate, and irradiation temperature, are presented and discussed. Received: 19 August 1999 / Accepted: 20 October 1999 / Published online: 23 February 2000     

Design of a nanoscale silicon laser

The recent observation of optical gain from silicon nanocrystals embedded in SiO₂ opens an opportunity to develop a nanoscale silicon-based laser. However, the challenge remains to design and develop a laser architecture using CMOS-compatible materials. In this paper we present two designs for a waveguide laser in which silicon nanocrystals embedded in SiO₂ are used as the optical gain media. One design employs a SiO₂ membrane containing encapsulated Si nanocrystals. Preliminary calculations given here show that a highly resonant laser cavity can be produced in a SiO₂ membrane using sub-wavelength structures. This photonic crystal architecture, used to guide and contain the light, can be combined with a gain medium of optically active Si nanocrystals synthesized in the SiO₂ membrane using ion implantation/thermal annealing to produce a Si-based laser. The laser cavity dimensions can be matched to the near-infrared wavelengths where optical gain has been observed from Si nanocrystals. The second design utilizes silicon nanocrystals embedded in a distributed-feedback laser cavity fabricated in SiO₂. Lasing action over a broad wavelength range centered at ∼770 nm should be possible in both of these configurations. Received: 20 December 2002 / Accepted: 7 January 2003 / Published online: 11 April 2003 RID="*" ID="*"Corresponding author. Fax: +1-434/982-2037, E-mail: supriya@virginia.edu     

Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation

The effect of gamma irradiation on the interface states of ion-implanted MOS structures is studied by means of the thermally stimulated charge method. 10-keV oxygen- or boron- (O⁺ or B⁺) implanted samples are gamma-irradiated with ⁶⁰Co. Gamma irradiation creates electron levels at the SiSiO₂ interface of the samples in a different way depending on the type of the previously implanted atoms (O⁺ or B⁺). The results demonstrate that the concentration of the shallower levels (in the silicon band gap) of oxygen-implanted samples increases more effectively after gamma irradiation. The same irradiation conditions increase more intensively the concentration of the deeper levels (in the silicon band gap) of boron-implanted samples. Received: 17 June 2002 / Accepted: 31 August 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +359-2/975-3236, E-mail: kaschiev@issp.bas.bg     

Extended defects in shallow implants

Extended defects are often found after ion implantation and annealing of silicon and they are known to affect dopant diffusion. The article reviews the structure and energetics of the most often found extended defects and describes the mechanisms by which all these defects grow in size and transform during annealing. Defects grow by interchanging the Si atoms they are composed of and thus maintain large supersaturations of free Si interstitials in the region. A model has been developped to describe such an evolution in presence of a free surface. It is shown that after low energy implantation, the surface of the wafer may recombine large amounts of these free Si interstitials, driving defects into dissolution before transformation into more stable forms. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +33-56/2257-999, E-mail: claverie@cemes.fr     

Interrelation of intrinsic and extrinsic defects – congruent, stoichiometric, and regularly ordered lithium niobate

A new approach to the intrinsic and extrinsic defect subsystems, considering them as one integrated functional system, is developed for complex oxides. The strong interrelation of these subsystems becomes especially apparent when concentrations of both defect classes are comparable. A new parameter, reflecting the total intrinsic defect concentration, is introduced to determine the degree of crystal imperfection. The necessity of at least two calibrated samples – congruent and regularly ordered crystals – is substantiated. The accuracy by which the parameter can be determined can serve as a criterion in comparison of different methods of crystal characterisation. A procedure for crystal calibration by several physical characteristics is illustrated. Such a heuristic generalisation of the concept of mutual correlation of the whole defect system and the material only became possible on the basis of experimental and theoretical study of large numbers of LiNbO₃ crystals. The spectra of EPR, NMR, ENDOR, and other properties of crystals with different compositions, diverse modifiers (K, Mg,...), and various probe impurities have been analysed. It is found that crystals with vanishingly small concentration of intrinsic defects offer extraordinary informative opportunities. Their micro- and macroscopic properties are discussed. The developed ideas have a general character; therefore they should also be valid for other non-stoichiometric complex oxides. Received: 3 December 1998 / Revised version: 15 February 1999 / Published online: 12 April 1999     

X-ray diffraction imaging investigation of silicon carbide on insulator structures

A new process was recently developed to manufacture silicon carbide on insulator structures (SiCOI). The process consists of several steps: (i) hydrogen implantation into an oxidised SiC wafer, (ii) bonding the oxidised surface of this wafer to an oxidised silicon substrate and (iii) high temperature splitting of a thin SiC film from the SiC wafer at the depth of the maximum hydrogen concentration and further annealing of the splitted film. The defect generation occurring during this process was investigated by synchrotron radiation X-ray diffraction topography, with special emphasis on to the last two steps. Various X-ray topographic techniques were used to characterise the lattice defects inside the SiC wafer, to quantify the strong lattice distortion near the edges of the splitted SiC film and to reveal SiC film regions lost during the splitting process. Moreover, we show that the strain fields of dislocations, observed in the silicon substrate after high temperature splitting and annealing of the splitted structure, induce a corresponding deformation in the thin SiC overlayer, despite the presence of the sandwiched oxide film. The defect density is much lower in the central region of the SiCOI structure. Received: 29 June 2001 / Accepted: 8 November 2001 / Published online: 20 March 2002     

Single-frequency Ti:Er:LiNbO3 distributed Bragg reflector waveguide laser with thermally fixed photorefractive cavity

The first single-frequency Ti:Er:LiNbO₃ distributed Bragg reflector waveguide laser with two thermally fixed photorefractive gratings as resonator mirrors is reported. The optically pumped (λ_p=1480 nm,120-mW incident power) laser emits up to 1.1 mW at λ_s=1561.1 nm. The threshold pump power is 70 mW. Received: 7 June 2001 / Published online: 30 October 2001     

X-ray characterization of precipitates in cerium-doped PbTe and SnTe crystals

The homogeneity, solid solubility, and chemical bonds in the new materials PbTe, SnTe doped with Ce were investigated. Scanning electron microscope observation and electron probe microanalysis carried out on PbTe crystals doped with Ce, revealed three types of Ce-rich precipitates with following compositions: CeTe₂, Ce₃Te₇, Ce₂Te₅ and small admixture of PbTe in precipitates. The solubility of Ce in PbTe matrix was estimated as 0.5±0.1 at. %. The solubility of PbTe in CeTe₂ and Ce₃Te₇ was found to be 3±0.5 at. %, but 7±0.5 at. % in the case of Ce₂Te₅. In SnTe crystal doped with Ce only one kind of precipitate with composition Ce₂SnTe₅ was found. Cerium solubility in SnTe matrix was estimated to be 1±0.25 at. %. According to our knowledge this is the first report of the identification of Ce₂SnTe₅ compound. The similar compounds Ce₂SnS₅ and Ce₂SnSe₅ are known. Received: 9 December 1998 / Accepted: 9 February 1999 / Published online: 28 April 1999     

Photoluminescence of Er3+ ions in amorphous silicon layers under intensive laser excitation

Transients of the photoluminescence (1.54 μm) of Er³⁺ ions embedded in an amorphous silicon matrix excited with intensive laser pulses are simulated using a phenomenological model which takes into account both the defect-related excitation mechanism and stimulated optical transitions in the ions. The simulated transients are compared with the experimental ones observed in Er-doped amorphous silicon layers under pulsed laser excitation. The modeling and the experimental results demonstrate a possibility to realize a regime of superradiance in the system of Er³⁺ ions pumped via an electronic excitation of the amorphous matrix. Received: 7 August 2001 / Revised version: 1 November 2001 / Published online: 17 January 2002     

2.0-MeV Er+ implanted in silicon: depth distribution, damage profile and annealing behaviour

Si crystals were implanted with 2.0- MeV Er⁺ at the doses of 5×10¹² ions/cm², 1×10¹⁴ ions/cm², 5×10¹⁴ions/cm², 1×10¹⁵ ions/cm² and 2.5×10¹⁵ ions/cm². Conventional furnace thermal annealing was carried out in the temperature range from 600 °C to 1150 °C. The depth distribution of Er, associated damage profiles and annealing behavioar were investigated using the Rutherford backscattering spectrometry and channelling (RBS/C) technique. A proper convolution program was used to extract the distribution of Er from the experimental RBS spectrum. The obtained distribution parameters, projected range R_p, projected range straggling ΔR_p and skewness SK were compared with those of TRIM96 calculation.The experimental R_p and SK values agree well with the simulated values, while the experimental ΔR_p is larger than TRIM 96 simulated value by a factor of 18%. The damage profile of silicon crystal induced by 2.0-MeV Er⁺ at a dose of 1×10¹⁴ ions/cm² was extracted using the multiple-scattering dechannelling model based on Feldman’s method, which is in a good agreement with the TRIM96 calculation. For the samples with dose of 5×10¹⁴ ions/cm² and more, an abnormal annealing behavioar was found and a qualitative explaination has been given. Received: 11 October 1999 / Accepted: 28 March 2000 / Published online: 5 July 2000     

High resolution quantitative SIMS analysis of shallow boron implants in silicon using a bevel and image approach

Secondary ion mass spectrometry (SIMS) is frequently used as the preferred tool for dopant profiling due to its sensitivity and depth resolution. However, as dopant profiles become shallower most, if not all of the implant profile lies in the pre-equilibrium or transient region of an SIMS depth profile. In this region sputter yield and ionisation rate vary making accurate quantification of the implant profile very difficult. These problems can be reduced through the use of much lower beam energies or oxygen flooding of the sample. However, most SIMS instruments do not have these capabilities. In this paper an alternative technique for producing an accurate depth profile of a shallow implant, using existing SIMS technology is presented.Through the fabrication of bevels with very small slope angles on a shallow boron implanted silicon via a chemical etch, SIMS ion imaging is performed on the exposed surface. Ion image data is then summed, and in conjunction with accurate measurement of the bevel morphology, a shallow boron implant profile produced. The ‘bevel-image’ profile compares very well with a profile obtained using a 1 keV oxygen beam. To ensure a good dynamic range on the ‘bevel-image’ profile it is important to clean the bevel with a HF etch, prior to imaging.     

Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

2 and Si lattices at 380 °C, which was defined as zero-mismatch temperature. The implantation was conducted with a metal vapor vacuum arc (MEVVA) ion implanter at an extraction voltage of 45 kV. Based on a thermal conduction estimation, a temperature rise of 380 °C required the Ni-ion current density to be 35 μA/cm². For the Si(111) wafers, the high conducting NiSi₂ layers were indeed directly formed after Ni-ion implantation with this specific current density to a normal dose of 2×10¹⁷ ions/cm² and the resistivity was as low as 9 μΩ cm. For the Si(111) wafers pre-covered with a 10-nm Ni overlayer, the resistivity of the NiSi₂ layers obtained under the same conditions decreased down to about 6 μΩ cm. The superior electrical property of the NiSi₂ was thought to be related to its formation temperature, i.e. at a zero-mismatch temperature of 380 °C, which resulted in minimizing the stress and stress-induced defects involved in its formation as well as cooling process. Received: 27 April 1998 / Accepted: 26 October 1998