Surface disorder in c-Si induced by swift heavy ions

The disorders induced in crystalline silicon (c-Si) through the process of electronic energy loss in the swift heavy ion irradiation were investigated. A number of silicon <1 0 0> samples were irradiated with 65 MeV oxygen ions at different fluences, 1×10¹³ to 1.5×10¹⁴ ions/cm², and characterized by the Raman spectroscopy, the optical reflectivity, the X-ray reflectivity, the atomic force microscopy (AFM) and the X-ray diffraction (XRD) techniques. The intensity, redshift, phonon coherence length and asymmetric broadening associated with the Raman peaks reveal that stressed and disordered lattice zones are produced in the surface region of the irradiated silicon. The average crystallite size, obtained by analyzing Raman spectrum with the phonon confinement model, was very large in the virgin silicon but decreased to<100 nm dimension in the ion irradiated silicon. The results of the X-ray reflectivity, AFM and optical reflectivity of 200–700 nm radiation indicate that the roughness of the silicon surface has enhanced substantially after ion irradiation. The diffusion of oxygen in silicon surface during ion irradiation is evident from the oscillation in the X-ray reflectivity spectrum and the sharp decrease in the reflectivity of 200–400 nm radiation. The rise in temperature, estimated from the heat spike model, was high enough to melt the local silicon surface. The results of XRD indicate that lattice defects have been induced and a new plane <2 1 1> has been formed in the silicon <1 0 0>after ion irradiation. The results of the present study show that the energy deposited in crystalline silicon through the process of electronic energy loss ～0.944 keV/nm per ion is sufficient to induce disorders of appreciable magnitude in the silicon surface even at a fluence of ～10¹³ ions/cm².     

Optical and Structural Modifications in Heavy Ion Irradiated Polystyrene

Samples of polystyrene (PS) have been irradiated with ⁶⁴Cu (50 and 120 MeV) and ¹²C (70 MeV) ion beams (fluence=10¹¹ to 10¹³ ions cm^?2) in order to study the induced modifications using UV‐VIS and FTIR spectroscopy. UV spectra of irradiated samples reveal that the optical band gap decreases from 4.36 to 1.46 eV in PS. The decrease in optical band gap is more pronounced with the Cu‐ion beam due to high electronic energy loss as compared to the C ion beam. The effect of low energy (50 MeV) Cu ions on the optical properties of PS is larger than that due to high energy (120 MeV) Cu ions. The correlation between the optical band gap and the number of six member carbon rings inside the largest carbon clusters embedded in the network of polystyrene is discussed. FTIR spectra reveal the formation of hydroxyl, alkene, and alkyne groups in the Cu‐ion irradiated PS. Changes in the intensity of the absorption bands on irradiation with C‐ion relative to pristine samples have also been observed and are discussed.     

Carbon (70 MeV) and copper (120 MeV) ions irradiation effects in Makrofol-N

Makrofol-N polycarbonate was irradiated with carbon (70 MeV) and copper (120 MeV) ions to analyze the induced effects with respect to optical and structural properties. In the present investigation, the fluence for carbon and copper beams was kept in the range of 1×10¹¹– 1×10¹³ ions/cm² to study the swift heavy ion induced modifications. UV–VIS, FTIR and XRD techniques were utilized to study the induced changes. The analysis of UV–VIS absorption studies revealed that the optical energy gap was reduced by 17% on carbon irradiation, whereas the copper beam leads to a decrease of 52% at the highest fluence of 1×10¹³ ions/cm². The band gap can be correlated to the number of carbon atoms, N, in a cluster with a modified Robertson's equation. In copper (120 MeV) ions irradiated polycarbonate, the number of carbon atoms in a cluster was increased from 63 to 269 with the increase of ion fluence from 0 to 1×10¹³ ions/cm², whereas N is raised only up to 91 when the same polymer films were irradiated with carbon (70 MeV) ions under similar conditions. FTIR analysis showed a decrease in almost all characteristic absorption bands under irradiation. The formation of hydroxyl (? OH) and alkene (C?C) groups were observed in Makrofol-N at higher fluence on irradiation with both types of ions, while the formation alkyne end (R? C≡ CH) group was observed only after copper ions irradiation. The radii of the alkyne production of about 3.3 nm were deduced for copper (120 MeV) ions. XRD measurements show a decrease in intensity of the main peak and an increase of the average intermolecular spacing with the increase of ion fluence, which may be attributed to the structural degradation of Makrofol-N on swift ion irradiation.     

Meßanordnung zur Untersuchung der Radiothermolumineszenz von Polymeren

In the present work, an appliance for the measurement of the radiothermoluminescence of thin polymer layers irradiated at a temperature T = 80 K is described. The design of the electron beam source used for the irradiation as well as of both the cooling and the healing systems is presented in detail.

An electrode system of oscillograph tubes is used as an election source yielding flux density I ≥ 10^?6 A/cm² with electron energy being variable from 5 keV to 25 keV. The appliance offers particular advantage by the aggregation of irradiation source, sample holder and SEV, rendering possible measurement of isothermal luminescence at low temperature immediately after irradiation.     

Synthesis,characterization and excellent photocatalytic activity of Ag/AgBr/MoO3 composite photocatalyst

A novel composite photocatalyst Ag/AgBr/MoO₃ was successfully synthesized via a simple precipitation method at room temperature. The obtained products were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy and UV–vis diffuse reflectance spectroscopy in detail. The photocatalytic activity of the samples was evaluated by monitoring the degradation of rhodamine B (RhB) solution under visible-light irradiation. The results showed that the photocatalytic activity of Ag/AgBr/MoO₃ composite significantly enhanced and the degradation ratio of RhB reached 97.7 % after 15 min only. The excellent photocatalytic activity might be closely related to the large surface area, porosity structure and efficient separation of photoinduced electron–hole pairs. The possible reaction mechanism was also discussed.     

Swift heavy ion provoked structural, optical and electrical properties in SnO2 thin films

SnO₂ thin films grown on glass substrates at 300 ^°C by reactive thermal evaporation and annealed at 600 ^°C were irradiated by 120 MeV Ag⁹⁺ ions. Though irradiation is known to induce lattice disorder and suppression of crystallinity, we observe grain growth at a certain fluence of irradiation. X-ray diffraction (XRD) revealed the crystalline nature of the films. The particle size estimated by Scherrer’s formula for the irradiated films was in the range 10–25 nm. The crystallite size increases with increase in fluence up to 1×10¹² ions?cm^?2, whereas after that the size starts decreasing. Atomic force microscope (AFM) results showed the surface modification of nanostructures for films irradiated with fluences of 1×10¹¹ ions?cm^?2 to 1×10¹³ ions?cm^?2. The UV–visible spectrum showed the band gap of the irradiated films in the range of 3.56 eV–3.95 eV. The resistivity decreases with fluence up to 5×10¹² ions?cm^?2 and starts increasing after that. Rutherford Backscattering (RBS) reveals the composition of the films and sputtering of ions due to irradiation at higher fluence.     

Swift ion beam irradiation on lithium niobate single crystals

Single crystals of lithium niobate were irradiated by 50 MeV Li³⁺ion irradiation at various ion fluences. The irradiated single crystals were subjected to various studies such as X-ray diffractometry, UV–VIS–NIR analysis and refractive index measurements. Atomic force microscopy patterns were recorded to study the surface changes after irradiation. Micro-Raman measurements were also recorded for irradiated specimens and the result of the measurements are discussed in detail.     

Effects of electron irradiation on the properties of GZO films deposited with RF magnetron sputtering

Transparent conductive GZO films were deposited on polycarbonate substrates by electron beam assisted radio frequency (RF) magnetron sputtering and then the influence of electron irradiation on the structural, optical and electrical properties of GZO films was investigated by using X-ray diffractometry, UV-vis spectrophotometry, four point probes, atomic force microscopy and UV photoelectron spectroscopy. Sputtering power was kept constant at 3 W/cm² during deposition, while electron irradiation energy varied from 450 to 900 eV.Electron irradiated GZO films show larger grain sizes than those of films prepared without electron irradiation, and films irradiated at 900 eV show higher optical transmittance in the visible wavelength region and lower sheet resistance (120 Ω/□) than other films. The work-function is also increased with electron irradiation energy. The highest work-function of 4.4 eV was observed in films that were electron irradiated at 900 eV.     

The effects of Xe irradiation on He and H co-implanted Si

A combination of X-ray diffraction, cross-sectional transmission electron microscopy (XTEM), and Raman spectroscopy was used to study the effects of irradiation with swift heavy ions on helium and hydrogen co-implanted silicon.<100>-oriented silicon wafers were co-implanted with 30 keV helium to a dose of 3×10¹⁶He⁺/cm² and 24 keV protons to a dose of 2×10¹⁶ H⁺/cm². Moreover, selected helium and hydrogen co-implanted Si wafers were irradiated with 94 MeV xenon. After He and H co-implantation and Xe-irradiation, the wafers were annealed at a temperature of 673 K for 30 min. The damage region of the wafers was examined by the XTEM analysis. The results reveal that most of the platelets are aligned parallel to the (100) plane in the He and H co-implanted Si. However, majority of the platelets lie in<texlscub>111</texlscub>planes after Xe irradiation. Blisters do not occur on the sample surface after Xe irradiation. Raman results reveal that the intensities of both SiH₂ and V₂H₆ modes increase with the increase in the dose of Xe. A possible explanation is that strong electronic excitation during Xe irradiation produces annealing effect, which reduces both lattice damage and the out-of-plane tensile strain.     

X- and gamma-ray irradiation effects on vanadium pentoxide thin films

Thickness and composition of thin films can be measured with X- and gamma-rays. In this work, thickness and composition of vanadium pentoxide thin films are investigated by energy dispersive and wavelength dispersive X-ray fluorescence systems. Also, the surface analysis of vanadium pentoxide thin films irradiated with Rhodium Kα X-rays and 59.54?keV gamma-rays emitted from 100?mCi and 5?Ci Americium-241 radioactive sources is performed by scanning electron microscope. It is observed that X- and gamma-rays are destructive for vanadium pentoxide thin films. Also, the composition of vanadium pentoxide thin films changes by irradiation with X- and gamma-rays.     

Non-contact subsurface temperature measurements following mid-infrared laser irradiation

A difficult challenge in laser processing at nanosecond time scales is monitoring substrate temperature in the laser focal volume, particularly for mid-infrared laser irradiation where the absorption depth is relatively large and the attained temperatures are often relatively low. Here, we describe time-dependent measurements of the subsurface temperature of a target material following absorption of pulsed mid-infrared (MIR) laser irradiation, by detecting the luminescence from micron-size ceramic phosphor particles (Gd-doped YAG:Ce) embedded in the target material at a concentration of up to 10 %. Temperature calibrations were obtained by measuring the luminescence decay of the probe particles in an oil-bath heater. A silica-nanoparticle film was irradiated by an Er:YAG laser operating in a free-running mode over a fluence range up to but below the ablation threshold, while the third harmonic of the Nd:YAG laser excited the luminescence of the probe particles. From the temperature calibrations, it was possible to infer the thermal history of the target as a function of time delay between the Er:YAG and Nd:YAG laser pulses.     

Effect of 100 MeV O7+ ion beam irradiation on structural,optical and electronic properties of SnO2 thin films

In this paper, we present the impact of swift heavy ion beam irradiation on the structural, optical and electronic properties of SnO₂ thin films. Thin films were deposited using the pulsed laser deposition technique on Al₂O₃ substrates. Atomic force microscopy, X-ray diffraction, UV–visible absorption and temperature-dependent resistivity measurements were performed to explore the morphological, structural, optical and electronic properties of the as-deposited and irradiated samples. The peak intensity of the (200) peak was found to decrease monotonously with increasing irradiation fluence. The band gap energy of the 1×10¹¹ ion/cm² irradiated sample was found to increase. The electrical resistivity of the samples showed a continuous increase with the irradiation fluence.     

532 nm纳秒激光辐照下的单晶硅表面微结构及荧光特性

采用Nd:YAG纳秒脉冲激光对单晶硅在空气中进行辐照,研究了表面微结构在不同能量密度和扫描速度下的演化情况。扫描电子显微镜测量表明,激光在相对较低能量密度下辐照硅表面诱导出鱼鳞状波纹结构,激光能量密度相对较大时,诱导出絮状多孔的不规则微结构。光致荧光谱（PL）表明,激光扫描区域在710 nm附近有荧光发射。用氢氟酸腐蚀掉样品表面的SiOx后,荧光峰的强度显著降低,说明SiOx在光致发光增强上起重要作用。能量色散X射线谱（EDS）表明氧元素的含量随激光能量密度的增大而增加。研究表明:纳秒激光的能量密度和扫描速度对微结构形成起着决定性作用,改变了硅材料表面微结构尺寸,增大了光吸收面积; 氧元素在光致发光增强上起重要作用,微构造硅和SiOx对光致荧光的发射都有贡献。     

Prebreakdown phase in atmospheric discharges

Pulsed X-ray radiation with quanta energy higher than 5 keV is recorded during the prebreakdown phase under discharges in atmospheric-pressure air at a maximum voltage from the 0.8?C1.2 MV range. The UV and X-ray generation region has been localized using collimated and time-resolved diagnostics. In the near-UV range, the maximum radiation intensity corresponds to the instant of X-ray generation.     

Effect of laser annealing using high repetition rate pulsed laser on optical properties of phosphorus-ion-implanted ZnO nanorods

The effect of high repetition rate pulsed laser annealing with a KrF excimer laser on the optical properties of phosphorus-ion-implanted zinc oxide nanorods has been investigated. The recovery levels of phosphorus-ion-implanted zinc oxide nanorods have been measured by photoluminescence spectra and cathode luminescence images. Cathode luminescence disappeared over 300 nm below the surface due to the damage caused by ion implantation with an acceleration voltage of 25 kV. When the annealing was performed at a low repetition rate of the KrF excimer laser, cathode luminescence was recovered only in a shallow area below the surface. The depth of the annealed area was increased along with the repetition rate of the annealing laser. By optimizing the annealing conditions such as the repetition rate, the irradiation fluence and so on, we have succeeded in annealing the whole damaged area of over 300 nm in depth and in observing cathode luminescence. Thus, the effectiveness of high repetition rate pulsed laser annealing on phosphorus-ion-implanted zinc oxide nanorods was demonstrated.     

Mössbauer-type photoluminescence spectra of irradiated germamum

A Mössbauer-type structure has been observed in the 15°K spectra of germanium crystals irradiated at room temperature by Co⁶⁰ γ-rays and 700 keV electrons. The spectra consist of an intense band peaking at 0.688 eV accompanied by mainly TA-phonon-assisted lower energy sidebands. The transition producing the luminescence is believed to be the annihilation of an exciton bound to a defect center by forces of shorter range than coulombic attraction. The dependence of the new spectra upon irradiation temperature and certain sample characteristics indicate that the center contains both primary defect(s) and an unknown impurity.     

110keV铁离子束辐照L(+)–半胱氨酸的分子改性研究

用110keVFe离子注入L(+)-半胱氨酸薄膜样品,然后通过傅里叶变换红外光谱、紫外-可见光谱和核磁共振氢谱分析表明,L(+)-半胱氨酸在接受Fe离子束辐照后受到了严重损伤,在样品中产生了新的分子基团.ESR波谱分析表明在辐照产物中存在一种长寿命自由基.ESI质谱分析进一步支持了低能离子束辐照所致生物分子改性的发生.     

Surface modification study of low energy electron beam irradiated polycarbonate film

The effect of low energy electron beam irradiation on polycarbonate (PC) film has been studied here. The PC film of thickness 20 μm was exposed by 10 keV electron beam with 100 nA/cm² current density. The irradiated film was characterized by mean of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and residual gas analyzer (RGA). Formation of unsaturated bonds and partial graphitization of the surface layer are measured by XPS. Results of the AFM imaging shows electron implantation induce changes in surface morphology of the polymer film. The residual gas analyzer (RGA) spectrum of PC is recorded in situ during irradiation. The results show the change in cross-linking density of the polymer at the top surface.     

Interplay of native defect-related photoluminescence response of ZnO nanosticks subjected to 80 keV Ar ion irradiation

We report on the effect of 80 keV Ar⁺ ion irradiation on the luminescence response of zinc oxide (ZnO) nanosticks synthesized using a simple microemulsion route. The formation of nanoscale rods was confirmed from the transmission electron microscopy, whereas the hexagonal wurtzite phase of the nanorods was detected in an X-ray diffraction pattern. The photoluminescence pattern of the nanorods was dominated by various native defect states of ZnO, which are responsible for the quenching of the typical band edge emission of ZnO. Under Ar⁺ ion irradiation at a fluence of 1×10¹³ ions/cm², the band edge emission was recovered owing to the suppression of oxygen vacancy defects. In addition, the formation of new zinc vacancy and ionized zinc interstitial defects were also evident. Conversely, the band edge emission was found to be quenched as a result of the creation of more oxygen vacancy (V_O) defects due to ion irradiation (fluence: 1×10¹⁵ ions/cm²). The nuclear energy loss of the Ar⁺ ions in ZnO is responsible for the formation of point (vacancy-related) defects, while relatively small amount of electronic energy loss of the Ar⁺ ion results in the ionization of the neutral zinc interstitial (Zn_i) defects. The energy deposition scheme of the energetic ions has been elaborated with the help of theoretical modeling that explains the observed features quite satisfactorily.     

Luminescence of undoped β-Ga2O3 single crystals excited by picosecond X-ray and sub-picosecond UV pulses

Undoped β-Ga₂O₃ single crystals were grown using the floating zone technique under a pressure of 2 atm oxygen. Luminescence spectra of the crystals were measured with steady-state X-ray (<15 keV) and UV (258 nm, 4.8 eV) sources. The X-ray excitation produced a spectrum with a peak at 390 nm (3.2 eV) whereas the UV excited spectrum had a peak at 430 nm (2.9 eV). The luminescence rise and decay were also examined by using picosecond X-ray and sub-picosecond UV pulses. It was found that the X-ray pulse excitation gave a slower rise and a faster decay of the luminescence compared with the UV pulse excitation. These results suggest that X-ray excitation generates high energy electrons, building up luminescent states until those electrons lose their kinetic energies, giving rise to the formation of local hot spots in the gallium oxide crystals.