Deposition and characterization of transparent and conductive sprayed ZnO:B thin films

Highly transparent and conductive Boron doped zinc oxide (ZnO:B) thin films were deposited using chemical spray pyrolysis (CSP) technique on glass substrate. The effect of variation of boron doping concentration in reducing solution on film properties was investigated. Low angle X-ray analysis showed that the films were polycrystalline fitting well with a hexagonal wurtzite structure and have preferred orientation in [002] direction. The films with resistivity 2.54×10⁻³ Ω-cm and optical transmittance >90% were obtained at optimized boron doping concentration. The optical band gap of ZnO:B films was found ∼3.27 eV from the optical transmittance spectra for the as-deposited films. Due to their excellent optical and electrical properties, ZnO:B films are promising contender for their potential use as transparent window layer and electrodes in solar cells.     

Structural, electrical and optical properties of AgInS2 thin films grown by thermal evaporation method

Structural electrical and optical properties of AgInS₂ (AIS) thin films grown by the single-source thermal evaporation method were studied. The X-ray diffraction spectra indicated that the AIS single phase was successful grown by annealing above 400 °C in air. The AIS grain sizes became large with increasing the annealing temperatures. All polycrystalline AIS thin films were sulfur-poor from the electron probe microanalysis and indicated n-type conduction by the Van der Pauw technique. It was deduced that the sulfur vacancies were dominant in the films and enhanced n-type conduction.     

Changes in the optical properties of as-deposited plasma polymerized 2,6-diethylaniline thin films by iodine doping

In this study, plasma polymerized 2, 6-diethylaniline (PPDEA) thin films of different thicknesses were synthesized using a glow discharge plasma polymerization method. Scanning electron microscopy showed that the surface morphology of an as-deposited PPDEA thin film was comparatively smooth after iodine doping. The iodine-doped PPDEA was found to be thermally stable up to ca about 560 K, which was slightly lower than that observed for as-deposited PPDEA. Ultraviolet-visible spectroscopic analyses demonstrated that iodine doping resulted in a significant decrease in the optical energy gap. As the doping period increased, the direct optical transition energy gap was reduced from 3.56 to 2.79 eV and the indirect optical transition energy gap was decreased from 2.23 to 1.97 eV. Thus it is observed that, the optical parameters of as-deposited PPDEA thin films with different thicknesses can be modified with different iodine doping periods.     

Defect induced ferromagnetism in carbon-doped ZnO thin films

We report on room temperature ferromagnetism in C-doped ZnO thin films prepared by electron beam evaporation. Magnetization, Hall effect, X-ray photoemission spectroscopy (XPS) and X-ray diffraction studies have been conducted to investigate the source and nature of ferromagnetism in C-doped ZnO. The samples were observed to have n-type conduction with the carrier concentration increasing with C doping. XPS does not give any evidence for C substituted at the O site, and is more consistent with the formation of C-O bonds and with the presence of C primarily in the +4 state. It is suggested that the ferromagnetism originates in the development of Zn vacancies that are stabilized due to the incorporation of C in a high valence state (C⁴⁺).     

Electrosynthesis and characterization of CdSe thin films: Optimization of preparative parameters by photoelectrochemical technique

CdSe thin films have been electrodeposited potentiostatically onto stainless-steel and fluorine-doped tin oxide-coated glass substrates from an aqueous acidic bath using cadmium acetate ((CH₃COO)₂Cd·2H₂O) as a Cd ion source. Preparative parameters such as deposition potential, solution concentration, bath temperature, pH of the electrolytic bath and deposition time have been optimized by using photoelectrochemical (PEC) technique to obtain well adherent and uniform thin films. The electrodeposits were dark brown in colour. The films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques. XRD studies reveal that films are polycrystalline, with hexagonal crystal structure. SEM shows that the films are compact, with spherical grains. Optical absorption studies reveal that the material exhibits a direct optical transition having band gap energy ∼1.72 eV. PEC study shows that the films are photoactive.     

Spray pyrolysis deposition of ZnO thin films on FTO coated substrates from zinc acetate and zinc chloride precursor solution at different growth temperatures

ZnO thin films were fabricated using zinc chloride and zinc acetate precursors by the spray pyrolysis technique on FTO coated glass substrates. The ZnO films were grown in different deposition temperature ranges varying from 400 to 550 °C. Influences of substrate temperature and zinc precursors on crystal structure, morphology and optical property of the ZnO thin films were investigated. XRD patterns of the films deposited using chloride precursor indicate that (1 0 1) is dominant at low temperatures, while those deposited using acetate precursor show that (1 0 1) is dominant at high temperatures. SEM images show that deposition temperature and type of precursor have a strong effect on the surface morphology. Optical measurements show that ZnO films are obviously influenced by the substrate temperatures and different types of precursor solutions. It is observed that as temperature increases, transmittance decreases for ZnO films obtained using zinc chloride precursor, but the optical transmittance of ZnO films obtained using zinc acetate precursor increases as temperature increases.     

Electrical and optical properties of Jäger-nickel (II)-based molecular-material thin films prepared by the vacuum thermal evaporation technique

Semiconductor molecular-material thin films of [6,13-Ac₂-5,14-Me₂-[14]-4,6,11,13-tetraenato-1,4,8,11-N₄] and the bidentate amines 1,4-diaminebutane, 1,12-diaminedodecane and 2,6-diamineanthraquinone have been prepared by vacuum thermal evaporation on corning glass substrates and crystalline silicon wafers. The films thus obtained were characterized by infrared (FTIR), ultraviolet-visible (UV-VIS) and photoluminescence (PL) spectroscopies. The surface morphology, thickness and structure of these films were analyzed by atomic force microscopy (AFM), ellipsometry and X-ray diffraction (XRD), respectively. IR spectroscopy showed that the molecular-material thin films exhibit the same intra-molecular bonds as the original compounds, which suggests that the thermal evaporation process does not significantly alter their bonds. The effect of temperature on conductivity was also measured in these samples; it was found that the temperature-dependent electric current is always higher for the voluminous amines with large molecular weights and suggests a semiconductor behavior with conductivities in the order of 10⁻⁶-10⁻¹ Ω⁻¹ cm⁻¹. Finally, the optical band gap (E_g) and cubic χ⁽³⁾ non-linear optical (NLO) properties of these amorphous molecular complexes were also evaluated from optical absorption and optical third harmonic generation (THG) measurements, respectively.     

Preparation of dielectric mirrors from high-refractive index contrast amorphous chalcogenide films

We report the preparation of planar 15-layer dielectric mirrors by a thermal evaporation of alternating high refractive index contrast amorphous chalcogenide Sb-Se and Ge-S layers, exhibiting a high-reflection band around 1.55 μm. The layer deposition quality and the thickness accuracy of such prepared chalcogenide multilayers were then checked using transmission electron microscopy. The layer thickness deviation of chalcogenide layers did not exceed ∼7 nm in comparison with the desired thicknesses. The width of Sb-Se/Ge-S layer boundary was approximately ∼3 nm, which is in good agreement with the surface roughness values of thermally evaporated Sb-Se and Ge-S single layers. The optical properties of the prepared 15-layer dielectric mirrors were consistent in temperature range of 20-120 °C; however, at higher temperatures there started apparent structural changes of Sb-Se films, which were followed by their crystallization. Excellent optical properties of chalcogenide materials in the infrared range make them interesting for applications, e.g., in optics and photonics.     

Preparation and characterization of ZrO2:Sm amorphous thin films by solid state photochemical deposition method

Thin films of ZrO₂ loaded with 10, 30 and 50 mol% Sm were prepared by a photochemical method using thin films of metal acetylacetonate complexes as precursors. The photolysis of these films induces the fragmentation of the acetylacetonate ligand and the partial reduction of metal ion together with volatile organic compounds. When the metallic complex is exposed to air, the product of the reaction is metal oxide. The photoreactivity of these films was monitored by FT-IR spectroscopy, followed by a post-annealing treatment process. The obtained films were characterized by X-ray photoelectron spectroscopy and atomic force microscopy.Photoluminescense studies of the films employed 400 nm radiation for excitation of the Sm ions present. The emission spectra showed signals arising from the ⁴G_5/2→⁶H_J (J=3/2, 7/2, 9/2) transitions, where the ⁴G_5/2→⁶H_3/2 transition has the highest intensity. The concentration dependence of the PL intensity was also studied. A maximum PL intensity was observed with 10 mol% Sm content but then diminished with higher Sm concentrations.     

Preparation and characterization of ZnO thin films prepared by thermal oxidation of evaporated Zn thin films

In this paper, the experimental results regarding some structural, electrical and optical properties of ZnO thin films prepared by thermal oxidation of metallic Zn thin films are presented.Zn thin films (d=200–400 nm) were deposited by thermal evaporation under vacuum, onto unheated glass substrates, using the quasi-closed volume technique. In order to obtain ZnO films, zinc-coated glass substrates were isochronally heated in air in the 300–660 K temperature range, for thermal oxidation.X-ray diffraction (XRD) studies revealed that the ZnO films obtained present a randomly oriented hexagonal nanocrystalline structure. Depending on the heating temperature of the Zn films, the optical transmittance of the ZnO films in the visible wavelength range varied from 85% to 95%. The optical band gap of the ZnO films was found to be about 3.2 eV. By in situ studying of the temperature dependence of the electrical conductivity during the oxidation process, the value of about 2×10⁻² Ω⁻¹ m⁻¹ was found for the conductivity of completely oxidized ZnO films.     

Synthesis, microstructure, and photocatalysis of ZnO/CdS nano-heterostructure

ZnO/CdS nano-heterostructure with flower-like morphology is fabricated by a facile two-step precipitation method for use in photocatalytic degradation of organic dyes. The as-prepared samples were characterized by X-ray diffraction, scanning electron microscopy, and UV-vis spectroscopy, demonstrating that the microstructure of the ZnO/CdS nano-heterostructure is composed of flower-like ZnO modified by CdS nanoparticles. The photocatalytic performance of ZnO/CdS nano-heterostructure is evaluated by the photodegradation of rhodamine B under the simulated sunlight, and the result indicates that the ZnO/CdS nano-heterostructure exhibits an appreciable photocatalytic property, which can be attributed to the extended photo-response range and the increased charge separation rate in the heterostructure.     

Growth of InN thin films on ZnO substrate by plasma-assisted molecular beam epitaxy

We have studied the microstructure property of InN epitaxial films grown on ZnO substrate by plasma-assisted molecular beam epitaxy. We found that the In₂O₃ compound was produced on ZnO substrate and many pits were formed on the InN films when InN was directly grown on ZnO substrate with the N/In flux ratio less than 40. We demonstrated that the quality of InN film was significantly improved when the In₂O₃ layer was used as a buffer to prevent the reaction between In and the ZnO substrate.     

Electrochemical deposition of Bi2Te3-based thin films

The electrochemical reduction processes on stainless-steel substrates from an aqueous electrolyte composed of nitric acid, Bi³⁺, HTeO₂⁺, SbO⁺ and H₂SeO₃ systems were investigated using cyclic voltammetry. The thin films with a stoichiometry of Bi₂Te₃, Bi_0.5Sb_1.5Te₃ and Bi₂Te_2.7Se_0.3 have been prepared by electrochemical deposition at selected potentials. The structure, composition, and morphology of the films were studied by X-ray diffraction (XRD), environmental scanning electron microscopy (ESEM) and electron microprobe analysis (EMPA). The results showed that the films were single phase with the rhombohedral Bi₂Te₃ structure. The morphology and growth orientation of the films were dependent on the deposition potentials.     

Nanoscratch studies of SiGe epitaxial layer damage on the Si substrate

The present study evaluates the wear performance of silicon-germanium (SiGe) epitaxial growth of thin films, in which the in situ scratch profile is followed by ex situ atomic force microscopy (AFM) examinations. The wear evaluation of SiGe films was carried out at different constant loads (2000, 4000, and 6000 μN) with the same sliding speeds. The microstructural morphology was observed by means of transmission electron microscopy (TEM)Findings show that annealing treatments of SiGe films exhibit the highest scratch resistance at 400 °C compared to that of the as-deposited sample. The main characteristic of SiGe film is its ability to withstand wear resistance; observations show that moderate compressive residual is beneficial to the film, since it can suppress crack initiation. The annealing treatments of SiGe films revealed the resultant adhesive and cohesive failure mechanism.     

Effect of Gd2O3 on the hydrogen evolution property of nickel–cobalt coatings electrodeposited on titanium substrate

The effect of rare earth compound, Gd₂O₃, on the microstructure and the hydrogen evolution property of Ni–Co alloy electrode was studied. The morphology and microstructure were characterized by SEM and XRD, respectively, and the electrocatalytic efficiency was evaluated on the basis of electrochemical data obtained from steady-state polarization curves, Tafel curves and electrochemical impedance spectroscopy measurements carried out in 0.50 M Na₂SO₄+0.10 M H₂SO₄ solution. It was found that the embedded Gd₂O₃ particles largely enhanced the electrocatalytic activity of Ni–Co alloy electrode to hydrogen evolution reaction.     

Grain boundary potential and charge density at grain boundaries of chemically prepared thin silver sulfide films

The grain boundary potential and interface state charge density at the grain boundaries of silver sulfide (Ag₂S) thin films prepared by chemical conversion of cadmium sulfide (CdS) films have been determined from the dc resistance of the material and are found to be sensitive to annealing. A reduction in the grain boundary potential and the grain boundary charge density of the film has been noticed when the source CdS film is annealed at different temperatures prior to chemical conversion. The variation in the grain boundary charge density of the grown Ag₂S film with source annealing temperature has been found to be similar to that of thin cadmium sulfide film, reported earlier. An additional low temperature heat treatment of the sample results in an enhancement in the charge density at the grain boundaries. The change in the silver vacancy and/or oxygen and sulfur content of the films as revealed from the energy dispersive spectra of the films suggests possible role of film composition on the grain boundary charge density.     

Effect of indium doping in CdO thin films prepared by spray pyrolysis technique

Preparation of transparent and conducting indium doped CdO thin films by spray pyrolysis on glass substrate is reported for various concentration of indium (2-8 wt%) in the spray solution. The electrical, optical and structural properties of indium doped CdO films were investigated using different techniques such as Hall measurement, optical transmission, X-ray diffraction and scanning electron microscope. X-ray analysis shows that the undoped CdO films are preferentially orientated along (2 0 0) crystallographic direction. Increase of indium doping concentration increases the films packing density and reorient the crystallites along (1 1 1) plane. A minimum resistivity of 4.843×10⁻⁴ Ω cm and carrier concentration of 3.73×10²⁰ cm⁻³ with high transmittance in the range 300-1100 nm were achieved for 6 wt% indium doping. The band gap value increases with doping concentration and reaches a maximum of 2.72 eV for 6 wt% indium doping from 2.36 eV of that of undoped film. The minimum resistivity achieved in the present study is found to be the lowest among the reported values for In-doped CdO films prepared by spray pyrolysis method.     

Yttrium nitride thin films grown by reactive laser ablation

Yttrium nitride thin films were grown on silicon substrates by laser ablating an yttrium target in molecular nitrogen environments. The composition and chemical state were determined with Auger electron, X-Ray photoelectron, and energy loss spectroscopies. The reaction between yttrium and nitrogen is very effective using this method. Ellipsometry measurements indicate that the films are metallic. We attribute this behavior to a small oxygen contamination. Each oxygen atom introduces two additional electrons to the unit cell, resulting in a complex semiconductor-ionic-metallic system. These results are corroborated by first principles total energy calculations of clean and oxygen doped YN.     

Mn doped ZnO nanostructured thin films prepared by ultrasonic spray pyrolysis method

Mn-doped ZnO thin films with different percentage of Mn content (0, 1, 3 and 5 at.%) and substrate temperature of 350 °C, were deposited by a simple ultrasonic spray pyrolysis method under atmospheric pressure. We have studied the structural and optical properties by using X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and ultra-violet visible near infrared (UV–Vis-NIR) spectroscopy. The lattice parameters calculated for the Mn-doped ZnO from XRD pattern were found to be slightly larger than those of the undoped ZnO, which indicate substitution of Mn in ZnO lattice. Compared with the Raman spectra for ZnO pure films, the Mn-doping effect on the spectra is revealed by the presence of additional peak around 524 cm⁻¹ due to Mn incorporation. With increasing Mn doping the optical band gap increases indicating the Burstein–Moss effect.     

Preparation and characterization of electrodeposited Sb2Se3 thin films from non-aqueous media

Semiconducting Sb₂Se₃ thin films have been prepared onto the stainless steel and fluorine doped tin oxide coated glass substrates from non-aqueous media using an electrodeposition technique. The electrodeposition potentials for different bath compositions and concentrations of solution have been estimated from the polarization curves. SbCl₃ and SeO₂ in the volumetric proportion as 1:1 with their equimolar solution concentration of 0.05 M form good quality films. The films are characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and optical absorption techniques. The SEM studies show that the film covers the total substrate surface with uneven surface morphology. The XRD patterns of the films obtained by varying compositions and concentrations show that the as-deposited films are polycrystalline with relatively higher grain size for 1:1 composition and 0.05 M concentration. The optical band gap energy for indirect transition in Sb₂Se₃ thin films is found to be 1.195 eV.