Strain-induced photoreflectance spectra in the vicinity of the E 0 transition in GaAs/Si and InP/Si heterostructures

A study is reported of the structure of photoreflectance (PR) spectra in the vicinity of the E ₀ transition from thin (d=1–5 μm) n-GaAs and n-InP films (n=10¹⁶–10¹⁷ cm⁻³) grown epitaxially on Si(001) substrates. A quantitative analysis of the spectra involving multi-component fitting shows that the electronic optical transition from the {3/2;±1/2} subband provides a dominant contribution to the intermediate-field electromodulation component in both systems. The splitting observed in the GaAS/Si PR spectra near the main peak are accounted for not by the strain-induced valence-band splitting but rather by a spectral superposition of the intermediate-field component due to the {3/2;±1/2} subband with a low-energy excitonic component. The analytically established transition energy E ₀ ^3/2;±1/2 is used to calculate biaxial strains in epitaxial films. Fiz. Tverd. Tela (St. Petersburg) 41, 725–731 (April 1999)     

Electromagnetic form factors of nucleons in a relativistic square-root potential model of independent quarks

The nucleon electromagnetic form factorsG _E ^P (q²),G _M ^P (q²) and the axial-vector form factor G_A(q²) are studied in a relativistic model of independent quarks confined by an equally mixed scalar-vector square root potentialV _q(r)=1/2(1+γ ⁰)(ar ^1/2+ν ₀) taking into account the appropriate centre-of-mass corrections. The respective root-mean-square radii associated withG _E ^P (q²) and G _A (q²) come out as [〈r ²〉 _E ^P ]^1/2=0.86 fm and 〈r _A ² 〉^1/2=0.88 fm. Restoration of chiral symmetry in this model is discussed to derive the pion-nucleon form factorG _πNN(q²) and consequently the pion-nucleon coupling constant is obtained asg _πNN(q²)=12.81 as compared tog _πNN(q²)_exp⋍13.     

Influence of disorder in compensation-doped germanium on the critical indices of the metal-insulator transition

We present a critical review of the present state of the critical exponent puzzle of the metal-insulator transition of doped semiconductors with emphasis on the role of meso-and macroscopic inhomogeneity caused by the disorder of intended or unintended acceptors and donors in crystals. By using both isotopic engineering and neutron transmutation doping (NTD) of germanium we found for low compensations (at K=1.4 and 12%) that the critical exponents of the localization length and the dielectric constant are nearly ν=1/2 and ζ=1, which double for medium compensations (at K=38 and 54%) to ν=1 and ζ=2, respectively. Fiz. Tverd. Tela (St. Petersburg) 41, 837–840 (May 1999) Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.     

Concerning the two magnetic correlation lengths above T c in an Invar iron-nickel alloy

The magnetic phase transition in the Invar alloy Fe₇₀Ni₃₀ is investigated by means of small-angle neutron scattering over a wide range of momentum transfer. This method was used to measure two magnetic correlation lengths R _c 1 and R _c 2 which coexist in the alloy above the phase transition temperature T _c . The critical correlations with correlation length R _c 1 are described well by an Ornstein-Zernicke expression, and the critical correlations with the second correlation length, an order of magnitude larger than R _c 2, are described well by a squared Ornstein-Zernicke expression. The temperature dependences obtained for the correlation lengths R _c 1 and R _c 2 satisfy the power law R _c ∼((T−T _c )/T _c ) ^−υ with critical exponents υ₁=0.65±0.05 and υ₂=1.3±0.1 for the shorter and longer scales, respectively. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 1, 53–57 (10 July 1997)     

Determination of the neutron electric form factor from the reaction 3 He(e,e'n) at medium momentum transfer

The electric form factor of the neutron G_En has been determined in double polarized exclusive ³ He(e,e'n) scattering in quasi–elastic kinematics by measuring asymmetries A _⊥, A _∥ of the cross section with respect to helicity reversal of the electron, with the nuclear spin being oriented perpendicular to the momentum transfer q in case of A_⊥ and parallel in case of A_∥. The experiment was performed at the 855 MeV c. w. microtron MAMI at Mainz. The degree of polarization of the electron beam and of the gaseous ³ He target were each about 50%. Scattered electrons and neutrons were detected in coincidence by detector arrays covering large solid angles. Quasi–elastic scattering events were reconstructed from the measured electron scattering angles ϑ_e, φ_e and the neutron momentum vector p _n ^′ in the plane wave impulse approximation. We obtain the result <G _En>_{(0.27 < Q2c2/GeV2 < 0.5)}= 0.0334 ± 0.0033_stat± 0.0028_syst which is averaged over the indicated range of Q ², the squared momentum transfer. This G _En value is significantly smaller than measured from the D(e,e'n) reaction under similar kinematical conditions. To what extent final state interactions in ³He quench the G _En result is subject of calculations currently in progress elsewhere. Received: 29 April 1999     

Nature of conduction via impurities in uncompensated silicon

The static conductivity σ(E) and photoconductivity (PC) at radiation frequencies ħω=10 and 15 meV in Si doped with shallow impurities (density N=10¹⁶−6×10¹⁶ cm⁻³, ionization energy ε₁≃45 meV) with compensation K=10⁻⁴−10⁻⁵ in electric fields E=10–250 V/cm are measured at liquid-helium temperatures T. Special measures are taken to prevent the high-frequency part of the background radiation (ħω>16 meV) from striking the sample. It is found that the conductivity σ(E) is due to carrier motion along the D ⁻ band, which is filled with carriers under the influence of the field E. In fields E<E _q (E _q ≃100–200 V/cm) the carrier motion consists of hops along localized D ⁻ states in a 10–15 meV energy band below the bottom of the free band (energy ε=ε₁); for E>E _q carriers drift along localized D ⁻ states with energy ε∞ε₁−10 meV. An explanation is proposed for the threshold behavior of the field dependence of the photo-and static conductivities. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 4, 232–236 (25 August 1997)     

Ferroelectric phase transition in LaBSiO5 crystals from results of thermal and dielectric measurements

The specific heat of the ceramic and the permittivity of a single-crystal sample of LaBSiO₅, a new ferroelectric in the stilwellite family, were measured in a temperature range which includes the phase transition point (T _C=140 °C). The excess entropy of the phase transition ΔS=1.05 J/mol · K and the Curie-Weiss constant C _C-W=3.2×10³ K were determined. The results indicate that the phase transition in this crystal is of a “mixed” nature and exhibits features of a displacement-type transition and an order-disorder transition. Fiz. Tverd. Tela (St. Petersburg) 40, 1310–1312 (July 1998)     

Quantum corrections to the conductance of n-GaAs films in a strong magnetic field

The conductance of doped n-GaAs films is studied experimentally as a function of magnetic field and temperature in strong magnetic fields right up to the quantum limit (ħω_c = E _F). The Hall conductance G _xy is virtually independent of temperature T until the transverse conductance G _xx is quite large compared with e ²/h. In strong fields, when G _xx becomes comparable to e ²/h, G _xy starts to depend on T. The difference between the conductances G _xx at the two temperatures 4.2 and 0.35 K depends only weakly on the magnetic field H over a wide range of magnetic fields, while the conductances G _xx themselves vary strongly. The results can be explained by quantum corrections to the conductance as a result of the electron-electron interaction in the diffusion channel. The possibility of quantization of the Hall conductance as a result of the electron-electron interaction is discussed. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 3, 201–206 (10 February 1998)     

Logarithmic temperature dependence of the conductivity of the two-dimensional metal

We report on the first observation and studies of a weak delocalizing logarithmic temperature dependence of the conductivity, which causes the conductivity of the 2D metal to increase as T decreases down to 16 mK. The prefactor of the logarithmic dependence is found to decrease gradually with density, to vanish at a critical density n _c , 2∼2×10¹² cm⁻², and then to have the opposite sign at n>n _c ,2. The second critical density sets the upper limit on the existence region of the 2D metal, whereas the conductivity at the critical point, G _c ,2∼120e ²/h, sets an upper (low-temperature) limit on its conductivity. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 6, 497–501 (25 September 1998) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Critical slowing of local fluctuations near the paraelectric-incommensurate phase transition in Rb2ZnCl4

A study is reported of the anomalous broadening of Mn²⁺ EPR lines on the high-temperature side of the paraelectric-incommensurate phase transition in Rb₂ZnCl₄ crystals. It is shown that the resonant-line broadening is inhomogeneous and due to the contribution of low-frequency fluctuations corresponding to the central peak in the elementary-excitation spectrum. The data obtained have permitted us to obtain the critical correlation-length exponent ν=0.64±0.02 corresponding to the 3d XY model of Heisenberg. Fiz. Tverd. Tela (St. Petersburg) 41, 122–125 (January 1999)     

Optical echo spectroscopy and phase relaxation of Nd3+ ions in CaF2 crystals

Accumulated photon echoes have been used to investigate the mechanisms of optical dephasing in CaF₂ crystals activated by Nd³⁺ ions. Tunable picosecond laser radiation, which permits the selective excitation of various Nd³⁺ optical centers in the ⁴ I _9/2→⁴ G _5/2, ² G _7/2 transition, is used. The optical phase relaxation times measured at temperatures from 9 to 50 K permit determination of the homogeneous widths of the transitions between the low-lying ⁴ I _9/2 Stark level and three excited ⁴ G _5/2, ² G _7/2 levels, and calculation of the constants of the inter-Stark relaxation transitions in the ground and excited multiplets for the rhombic N and M Nd³⁺ centers in CaF₂ crystals. An analysis of the temperature dependence of the homogeneous linewidth of the transitions between low-lying Stark levels of the ground and excited states shows that the mechanism of optical dephasing in the crystals investigated is described well by direct relaxation processes with resonant inter-Stark absorption of one phonon in the ground and excited states. At T=9 K, the homogeneous linewidth Γ_h in CaF₂ crystals is almost an order of magnitude smaller than Γ_h in disordered CaF₂-YF₃ crystals. This difference can be attributed to the significantly greater spectral phonon density of states in disordered crystals. Zh. éksp. Teor. Fiz. 113, 278–290 (January 1998)     

EPR and dielectric relaxation of Fe3+ in KTaO3

EPR and the method of dielectric losses have been used to investigate Fe³⁺ centers of axial and orthorhombic symmetry in KTaO₃ single crystals. The EPR spectrum of orthorhombic-symmetry Fe³⁺ obtained in the 8-mm wavelength range at T=77 K is described by the spin-Hamiltonian with parameters g _x=1.98, g _y=2.01, g _z=2.00, D=0.43 cm⁻¹, and E=5.87×10^t-2 cm⁻¹. From the dielectric measurement data we have obtained the following parameters of the relaxation of the orthorhombic Fe³⁺ centers in KTaO₃: characteristic relaxation frequency τ ₀ ⁻¹ =2.33×10¹² Hz and activation energy E _a=0.044 eV. A model of the orthorhombic Fe³⁺ center in KTaO₃ is discussed within the framework of the kinetic parameters obtained. Fiz. Tverd. Tela (St. Petersburg) 39, 861–864 (May 1997)     

Spin susceptibility of neutron-irradiation-disordered YBa2Cu3O6.9 in the normal and superconducting states

The spin-spin relaxation rate ⁶³ T ₂ ⁻¹ of ⁶³Cu nuclei in CuO₂ layers is measured in the normal and superconducting states of the compound YBa₂Cu₃O_6.9 (T _c ^onset =94 K) subjected to radiation-induced disordering by a fast-neutron flux Φ to T _c ^onset =68 K (Φ=7×10¹⁸ cm⁻²) and T _c ^onset <4 K (Φ=12×10¹⁸ cm⁻²). It is found that as the structural disorder increases, the contribution of the indirect spin-spin interaction ⁶³ T _2G ⁻¹ , which is related to the value of the spin susceptibility at the boundary of the Brillouin zone of the copper planes χ_s(q={π/a; π/a}), decreases slightly at the transition to the superconducting state for the initial sample and remains unchanged for the weakly disordered sample. This behavior of the short-wavelength contribution to the spin susceptibility attests to the stability of the x ²−y ² symmetry of the energy gap against structural disorder, in accordance with proposed theoretical models of Cooper pairing for high-T _c cuprates. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 3, 172–177 (10 February 1998)     

Appearance of a band of delocalized D − states in uncompensated silicon in an electric field

The impurity photoconductivity spectra of uncompensated silicon at liquid-helium temperatures under conditions of strongly suppressed background radiation (background) are studied in different electric fields E. It is established that the delocalization arising in the D ⁻ band as E increases is not associated with any changes of the fluctuation potential and is due to the direct action of the field E. A delocalization band of finite width appears abruptly at a critical value E _c (∼100 V/cm) of E. The critical field E _c increases with the density of charged centers in the sample. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 1, 56–59 (10 January 1997)     

Observation of a shift of the mobility threshold in the D − band of silicon in an electric field according to the photoconductivity spectra

We have discovered that the extrinsic photoconductivity spectrum of doped, uncompensated crystalline Si at liquid-helium temperatures is qualitatively different in electric fields E above a critical value E _c . Specifically, the red edge of the photoconductivity, associated with photoionization of a neutral impurity, is shifted strongly to lower frequencies. This result is explained by the appearance of a mobility threshold in the D ⁻-band (upper Hubbard band) and the shift of this threshold as E increases. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 2, 89–94 (25 January 1996)     

Dielectric nonlinearity of crystalline Li2−x NaxGe4O9 (x≈0.23)

The dielectric nonlinearity of ferroelectric Li_2−x Na_xGe₄O₉ (x≈0.23) crystals is measured in the neighborhood of the phase transition temperatures. The magnitude of the nonlinear coefficient β is estimated from the shift in T _c and the reduction in ɛ _max under the influence of E ₌, from the dielectric nonlinearity in the paraphase, and from the temperature dependence of P _s in crystalline Li_2−x Na_xGe₄O₉ (x≈0.23). The resulting values of β are 1.87, 1.26, 2.17, and 1.17×10⁻⁹ (CGSE cm²)⁻², respectively. The mechanism for the phase transition in crystalline Li_2−x Na_xGe₄O₉ (x≈0.23) is discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 1070–1072 (June 1999)     

Ferroelectric properties of SrTiO3-PbTiO3 solid solutions

Dielectric properties of ceramic samples of Sr_1−x Pb_xTiO₃ solid solutions for x varying from 0 to 0.3 have been studied. The ferroelectric phase transition in this system has been established to persist down to x=0.005. Within the x values of 0.002 to 0.05, the ferroelectric transition temperature is shown to follow the relation T _c=A(x−x _c)^1/2, with A=440 K and x _c=0.002. Fiz. Tverd. Tela (St. Petersburg) 39, 714–717 (April 1997)     

Lifetimes and configuration mixing in 110Cd

Lifetimes of excited states in ¹¹⁰Cd have been measured by the Doppler shift attenuation method in the reaction (α,2nγ) at E _α= 25 MeV. Lifetime values for 8 states and lifetime limits for 3 states were obtained. The band structures of ¹¹⁰Cd have been interpreted in terms of a modified version of the interacting boson model (IBM + 2 q.p.). The calculations explain well the excitation energies and electromagnetic transition probabilities up to J ^π= 16⁺, except for the 10⁺ ₁ state. The structural features are discussed in terms of collective and two quasiparticle excitations. Received: 20 March 1999 / Revised version: 28 May 1999     

Poisson–Lie T-Duality¶for Quasitriangular Lie Bialgebras

We introduce a new 2-parameter family of sigma models exhibiting Poisson–Lie T-duality on a quasitriangular Poisson–Lie group G. The models contain previously known models as well as a new 1-parameter line of models having the novel feature that the Lagrangian takes the simple form , where the generalised metric E is constant (not dependent on the field u as in previous models). We characterise these models in terms of a global conserved G-invariance. The models on G=SU ₂ and its dual G ^* are computed explicitly. The general theory of Poisson–Lie T-duality is also extended, notably the reduction of the Hamiltonian formulation to constant loops as integrable motion on the group manifold. The approach also points in principle to the extension of T-duality in the Hamiltonian formulation to group factorisations D=G⋈M, where the subgroups need not be dual or connected to the Drinfeld double. Received: 22 August 1999 / Accepted: 4 February 2000