Neutron-Transmutation Doping and Radiation Modification of Semiconductors: Current Status and Outlook

This review focuses on the development of neutron-transmutation doping (NTD) and radiation modification (RM) technologies for semiconductor materials (Si and III–V compounds) in Russia. The advantages of NTD and RM materials over growth-doped semiconductors are demonstrated. The main tasks and outlook for the development of radiation technologies based on research and commercial RBMK-reactors operated in Russia are discussed.     

Laser-Excited Volume Secondary Radiation in Wide-Gap Semiconductors and Dielectrics

Studies of the volume secondary radiation (photoluminescence and Raman scattering) in wide-gap semiconductors (GaP, ZnSe) and condensed dielectrics were carried out at various temperatures. The low-temperature variations of the dielectric constants were evaluated. The anti-Stokes photoluminescence from the sample bulk, resulting from interband and impurity recombination, was observed for the first time when exciting the spectra of secondary radiation by the continuous radiation of a low-power helium--neon laser with the lasing line in the transparency region of gallium phosphide. A similar effect was observed at low temperatures in zinc selenide excited by an argon laser. Photoluminescence from the sample bulk was also found for a number of condensed dielectrics (hydrocarbons and oil) at room temperature. The results obtained allow analysis of impurities in the bulk of semiconductors and dielectrics based on recording the volume photoluminescence spectra.     

Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at NiSi2/Si Interface

A new method is proposed to modify the Schottky barrier height （SBH） for nickel silicide/Si contact. Chemical and electrical properties for NiSi2/Si interface with titanium, scandium and vanadium incorporation are investigated by first-principles calculations. The metal/semiconductor interface states within the gap region are greatly decreased, which is related to the diminutions of junction leakage when Ti-cap is experimentally used in nickel silicide/Si contact process. It leads to an unpinning metal/semiconductor interface. The SBH obeys the Schottky-Mort theory. Compared to Ti substitution, the SBH for electrons is reduced for scandium and increases for vanadium.     

GEANT4SPE质子屏蔽和半导体材料辐射效应模拟

利用蒙特卡罗软件GEANT4模拟太阳宇宙射线中能量为1 MeV~10 GeV质子对航天飞行器的影响,透射质子对半导体材料的损伤效应,计算外壳铝层对质子能谱的屏蔽效应.模拟结果表明,质子在介质中的线性能量转移、射程等和参考数据吻合较好;沿质子轨迹纵向能量沉积出现Bragg峰,且非弹性作用是影响能量沉积Bragg曲线的重要因素;对于半导体Si材料,反冲原子主要分布在质子轨迹线周围,并沿轨迹线横向‘扩散’,浓度降低;Al层屏蔽使入射质子能谱硬化,当Al层厚度超过10 mm时,厚度增加对屏蔽效果的改善不明显,反而次级粒子辐射增强效应变大.     

Dynamics of Photoreactions in (CF3I)nXem Mixed Clusters Exposed to Femtosecond Ultraviolet Radiation Inducing Multiphoton Ionization

JETP Letters - The multiphoton ionization of (CF3I)nXem mixed clusters formed at the outflow of a mixture of CF3I and Xe from an ultrasonic pulsed nozzle by femtosecond ultraviolet radiation...     

The Electronic Structure of Pristine and Doped (100) Tilt Grain Boundaries in SrTiO3

To understand the electronic properties of doped grain boundaries, we reviewed the atomic scale techniques currently available to study the electronic structure at pristine SrTiO₃ grain boundaries. The knowledge gained from the pristine boundaries is used to interpret experimental and theoretical results from a Mn doped 5 SrTiO₃ grain boundaries. Mn atoms are shown to preferentially substitute at specific Ti sites at the grain boundary core. Furthermore, the formal oxidation state of the Mn atoms at the grain boundary core was found to be reduced compared to the Mn atoms substituting for Ti in the bulk. This change of valence did not, however, significantly affect the atomic structure of the grain boundary, as determined by Z-contrast imaging and electron energy-loss spectroscopy, which revealed similar fine-structure features at both the doped and pristine grain boundary. We conclude, therefore, that composition and atomic structure have different effects on the local electronic structure and should be treated separately in any segregation and electrical conductivity models for grain boundaries.     

Cs-He混合蒸气中的辐射陷获效应和6P3／2能级有效辐射率的测量

测量了Cs-He混合蒸气中Cs(6P3/2)共振能级的有效辐射率,圆柱形样品池充入金属Cs和气压PHe为0~500Pa的He,样品池温度控制在330~370K之间,在池中产生1012~1013cm-3的Cs原子密度,使用单模半导体激光器(泵浦激光)将Cs原子激发至6P3/2态,另一调谐到6P3/2→8S1/2的单模激光束(检测激光)与泵浦束反平行通过样品池,并在池的直径方向平行移动,通过对检测激光束的吸收测定了激发态原子密度及其空间分布。由于辐射陷获存在,有效辐射率是自然辐射率与透射因子(发射的光子在探测区域内没有被吸收的平均概率,它与吸收截面及激发态原子密度和空间分布有关)的乘积。由6P3/2原子密度及其空间分布结合6P3/2←6S1/2跃迁线的碰撞增宽计算了透射因子,从而得到了不同He气压下,CsD2线的有效辐射率。从6P3/26→S1/2跃迁线强度I852的测量,得到的不同He气压下有效辐射率的比值与理论计算得到的比值相符。     

Clusters and magnetic anchoring points in (Ga,Fe)N condensed magnetic semiconductors

The stability and magnetic properties of Fe clusters in the (Ga,Fe)N magnetic semiconductor is investigated by using first-principles density functional theory and local spin density+Hubbard U theoretical methods. The present results reveal the existence of ferrimagnetic clusters formed by three or four peripheral Fe atoms neighboring a central Fe atom acting as a robust magnetic anchoring point. These clusters have magnetic moments 2 or 3 times that of a single Fe atom and, when connected by sharing peripheral Fe atoms, can form stable, ordered magnetic regions where all of the central atoms are ferromagnetically coupled. The formation of these ferrimagnetic clusters is proposed here to be at the origin of the ferromagnetic behavior observed in (Ga,Fe)N samples showing chemical phase separation.     

(BN)25团簇的结构与性能

采用密度泛函理论的杂化密度泛函（B3LYP）方法,在6-31G （d）基组水平上,对（BN）₂₅团簇进行结构优化和频率计算,得到基态构型,并对其稳定性、自然键轨道（NBO）、振动光谱和NICS进行计算.结果表明：（BN）₂₅团簇的能隙值较高,具有良好的化学稳定性;B原子和N原子的内部及原子之间都会发生s、p轨道杂化,原子之间有少量电荷转移;（BN）₂₅团簇的红外光谱和拉曼光谱都有较多振动峰;（BN）₂₅团簇具有芳香性.     

溶液浓度对CCl4费米共振的影响

测量了四氯化碳在苯中不同浓度的拉曼光谱,分析了不同浓度下四氯化碳v₁+v₄~v₃费米共振的变化。结果表明:随着浓度的降低,两费米双光谱强度比R增加,而频差Δ减小、费米共振耦合系数W减小、非谐力常数K增加。这种费米共振随浓度的变化是由溶剂效应引起的,即随着四氯化碳在苯中的浓度降低,其拉曼散射系数(光谱强度)增加,使两费米双线光谱强度增加而减弱了费米共振。     

(1+1)-Dirac bound states in one dimension, with position-dependent Fermi velocity and mass

We extend Panella and Roy’s [17] work for massless Dirac particles with position-dependent (PD) velocity. We consider Dirac particles where the mass and velocity are both position-dependent. Bound states in the continuum (BIC)-like and discrete bound state solutions are reported. It is observed that BIC-like solutions are not only feasible for the ultra-relativistic (massless) Dirac particles but also for Dirac particles with PDmass and PD-velocity that satisfy the condition m(x) v _F ² (x) = A, where A ≥ 0 is constant. Dirac Pöschl-Teller and harmonic oscillator models are also reported.     

Anisotropic Fermi Surfaces,Electrical Transport,and Two-Dimensional Fermi Liquid Behavior in Layered Ternary Boride MoAlB

We report a study of fermiology,electrical anisotropy,and Fermi liquid properties in the layered ternary boride MoAlB,which could be peeled into two-dimensional（2 D） metal borides（MBenes）.By studying the quantum oscillations in comprehensive methods of magnetization,magnetothermoelectric power,and torque with the firstprinciple calculations,we reveal three types of bands in this system,including two 2 D-like electronic bands and one complex three-dimensional-like hole band.Meanwhile,a large out-...