Si1－xGex/Si量子阱发光材料的分子束外延生长及其结构研究

采用固源Si分子束外延,在较高的生长温度于Si(100)衬底上制备出Si1－xGex/Si量子阱发光材料。发光样品的质量和特性通过卢瑟福背散射、X射线双晶衍射及光致发光评估。背散射实验中观察到应变超晶格的反常沟道效应;X射线分析表明材料的生长是共度的、无应力释放的,结晶完整性好。低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合。并讨论了生长温度对量于阱发光的影响。     

Si_（1－x）Ge_x／Si量子阱发光材料的分子束外延生长及其结构研究

采用固源Ｓｉ分子束外延，在较高的生长温度于Ｓｉ（１００）衬底上制备出Ｓｉ１－ｘＧｅｘ／Ｓｉ量子阱发光材料．发光样品的质量和特性通过卢瑟福背散射、Ｘ射线双晶衍射及光致发光评估．背散射实验中观察到应变超晶格的反常沟道效应；Ｘ射线分析表明材料的生长是共度的、无应力释放的，结晶完整性好．低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合．并讨论了生长温度对量于阱发光的影响．     

MOCVD外延Hg1-xCdxTe/Cd1-yZnyTe薄膜的光致发光

利用Raman显微镜系统对两块用MOCVD方法在Cd_0.96Zn_0.04Te衬底上生长的Hg_0.8Cd_0.2Te外延薄膜样品在光谱范围50～5000cm^-1进行了测量,在其中的一块样品上首次发现了143eV至193eV范围内出现的具有周期结构的光致发光峰,该发光峰对应的能带中心位于Hg_0.8Cd_0.2Te外延层导带底上方173eV,在另外一块外延薄膜样品中仅观察到四个Raman散射峰,没有周期结构的发光峰。为了分析上述光致发光的起因,对两块样品进行了X射线的双晶回摆曲线样品结构分析,得出样品在143eV至193eV范围的光致发光峰是由于改进MOCVD生长工艺提高了样品的结构质量所致,通过分析指出该光致发光峰是来源于Hg_0.8Cd_0.2Te外延层中的阴性离子空位的共振能级。     

m面蓝宝石上ZnO/ZnMgO多量子阱的制备及发光特性研究

利用等离子体辅助分子束外延设备(P-MBE)在m面的蓝宝石(m-Al₂O₃)衬底上制备了ZnO/Zn_0.85Mg_0.15O多量子阱.反射式高能电子衍射谱(RHEED)图样的原位观察表明,多量子阱结构是以二维模式生长的.从光致发光谱中可以看到ZnO/Zn_0.85Mg_0.15O多量子阱在室温仍具有明显的量子限域效应.在290 K时阱宽为3 nm的ZnO/Zn_{0.85关键词： 等离子体辅助分子束外延 ZnO多量子阱 光致发光}     

组份变化的InGaAsSb/AlGaAsSb多量子阱结构对其X射线衍射及发光性质的影响

通过二元系和三元系结构参数计算四元系量子阱结构的晶格常数、禁带宽度等,设计了InGaAsSb/AlGaAsSb结构的MBE生长参数及工艺,利用X射线双晶衍射和PL谱研究了InGaAsSb/AlGaAsSb多量子阱结构特性和光学特性。X射线双晶衍射谱中出现了8条卫星峰,表明制备的InGaAsSb/AlGaAsSb多量子阱结构具有良好的结晶质量。利用光致发光光谱方法对制备的样品的光学性质进行了表征,结果表明,不同组份的InGaAsSb/AlGaAsSb多量子阱的发光峰波长随组份的变化在1.6~2.28 μm范围内可调,样品PL谱的半峰宽最窄可达22 meV。     

分子束外延生长的(GaAs1－xSbx/InyGa1－yAs)/GaAs量子阱光致发光谱研究

报道了(GaAs_1-xSb_x/In_yGa_1-yAs)/Ga As量子阱结构的分子束外延生长与光致发光谱研究结果.变温与变激发功率光致发光谱的研究表明了此结构 为二型量子阱发光性质.讨论了光谱双峰结构的跃迁机制.通过优化生长条件，获得了室温1 31μm发光. 关键词： 分子束外延 量子阱 二型发光     

锗硅量子阱结构带间吸收边研究

利用光电流谱的方法对锗硅量子阱结构的带间吸收边进行了研究.实验观察到了在不同的偏压和温度下,锗硅量子阱结构的带间吸收边谱线发生了有规律的变化.通过对锗硅量子阱材料的光电流谱的带间跃迁吸收边的拟合,得到了硅导带到锗价带的能带宽度分别为1.043 eV和1.050 eV.随着外加电场的增强,带边的吸收曲线向低能方向移动.通过理论计算得到了带间跃迁吸收边的漂移量与外加电场的关系,并与实验吻合较好.随着温度的降低,带间吸收边向高能方向偏移,对于这一现象给出了定性的解释,并通过拟合得到了禁带宽度随温度的变化率.     

量子限制受主的光致发光研究

对一系列δ掺杂浅受主铍（Be）原子的GaAs/AlAs多量子阱和均匀掺杂Be受主的GaAs体材料中Be原子的能级间跃迁进行了光致发光（PL）研究.实验中所用的样品是通过分子束外延技术生长的均匀掺杂Be受主的GaAs外延单层样品和一系列GaAs/AlAs多量子阱样品,并在每量子阱中央进行了Be原子的δ掺杂,量子阱宽度为30 到200 ?.在4.2 K温度下测量了上述系列样品的光致发光谱,清楚地观察到了束缚激子的受主从基态1s_3/2（Γ₆）到第一激发态 关键词： 量子限制受主 光致发光 多量子阱 δ掺杂     

MOCVD外延Hg_(1-x)Cd_xTe/Cd_(1-y)Zn_yTe薄膜的光致发光

利用Raman显微镜系统对两块用MOCVD方法在Cd0 96Zn0 0 4 Te衬底上生长的Hg0 8Cd0 2 Te外延薄膜样品在光谱范围 5 0～ 5 0 0 0cm-1进行了测量 ,在其中的一块样品上首次发现了 1 4 3eV至 1 93eV范围内出现的具有周期结构的光致发光峰 ,该发光峰对应的能带中心位于Hg0 8Cd0 2 Te外延层导带底上方 1 73eV ,在另外一块外延薄膜样品中仅观察到四个Raman散射峰 ,没有周期结构的发光峰。为了分析上述光致发光的起因 ,对两块样品进行了X射线的双晶回摆曲线样品结构分析 ,得出样品在 1 4 3eV至 1 93eV范围的光致发光峰是由于改进MOCVD生长工艺提高了样品的结构质量所致 ,通过分析指出该光致发光峰是来源于Hg0 8Cd0 2 Te外延层中的阴性离子空位的共振能级。     

Si1-xCex/Si量子阱发光材料制备及特性研究

在si(100)衬底上用分子束外延成功生长了Si_(1-x)Ge_x/si量子阱发光材料,发现在生长过程中背景杂质含量直接影响材料的发光特性,用光致发光(PL)和卢瑟福背散射(RBS)对样品质量进行标定。在PL测量中观察到合金量子阱带边激子分辨峰,并对发光峰能和峰宽作了讨论。 关键词：     

Guided-Wave Two-Dimensional Acousto-Optic Scanner Using Proton-Exchanged Lithium Niobate Waveguide

Two-dimensional scanning of a 0.6328 mum guided-light beam has been realized using noncolinear acousto-optic (AO) coplanar Bragg diffraction together with colinear AO guided-mode to substrate radiation-mode conversion in a Z-cut Xpropagation LiNbO3 proton-exchanged (PE) waveguide. The two surface acoustic (SAW) waves utilized are at the center frequencies of 500 and 200 MHz, propagating in the Y and X axes, respectively. Two-dimensional scanning of approximately 720 resolvable light beam spots, namely, 18 40 (horizontal vertical) scanning, has been demonstrated using a light beam of 1.0 mm aperture. The total number of resolvable beam spots can be greatly increased from 720 by simply utilizing SAW transducers of larger bandwidth and a light beam of greater aperture. It should also be possible to significantly increase the diffraction efficiency from 3 % by optimizing the parameters of the PE waveguide and the SAWs.     

Hybrid Wavelength and Code Division Multiple Access in Optical Networks

A review of schemes for multiple access in fiber optic networks shows that a hybrid of wavelength and code division multiple access (WCDMA) combines the best features of both. In particular, the hybrid scheme retains the large information carrying capacity of wavelength division multiple access (WDMA) and flexibility of code division multiple access (CDMA). In this paper WDMA, optical CDMA (OCDMA), and WCDMA networks are discussed. In OCDMA networks, concept of incoherent and coherent coding including inverse decoding and matched filter is introduced. The delay performance of both WDMA and WCDMA networks, under the simple suboptimum access protocols based on cyclic search, is computed. It has been shown quantitatively that tuning delay significantly affects the delay performance of both WDMA and WCDMA networks. Futhermore, delay performance of WCDMA networks is always better than the WDMA networks for the same tuning delay, load, and number of users.     

Effect ofγ-radiation on the spectral luminescence characteristics of impure cadmium tungstate crystals

Results of a study of the effect of γ-radiation on the spectral luminescence properties of cadmium tungstate crystals doped with silver, bismuth, and molybdenum cations are presented. Spectral characteristics of the nondnnnoped crystals are briefly described. Absorption and photo and X-ray luminescence spectra of the crystals taken before and after exposure to γ-radiation (5.5·10⁴ Gy) are compared. It is found that the spectral characteristics of the crystals doped with silver, bismuth, and molybdenum cations do not change markedly after the exposure. The relation between the type of impurity-induced defects, individual characteristics of the impurity cations, and the character of the effect of γ-radiation on the spectral luminescence properties of impure crystals is analyzed (preliminarily). Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 1, pp. 55–60, January–February, 1997.     

Femtosecond Transform-Limited Pulse Generation by Compensating for the Linear Chirp of SPM Spectra in Dispersion Shifted Fibers

A simple technique of pulse compression, based on the linear chirp compensation of self-phase modulation (SPM) spectra in dispersion shifted fibers, is demonstrated. The optimization procedure is carried out, for a short span of a single-mode fiber, using a parabolic law, which describes the behavior of the squared output pulse width versus the pump peak power in the case of Gaussian pulses. The experimental results give a minimum pulse duration of 233 fs, which is in good agreement with the model. Shorter and coherent pulses, down to 90 fs, have been obtained by inserting an interference filter at the optical output.     

Sorting of bending magnets for the SSRF booster

The Shanghai Synchrotron Radiation Facility(SSRF)booster ring,a full energy injector for the storage ring,is deigned to accelerate the electron beam energy from 150MeV to 3.5GeV that demands high extraction efficiency at the extraction energy with low beam loss rate when electrons are ramping.Closed orbit distortion(COD)caused by bending magnet field uniformity errors which affects the machine performance harmfully could be effectively reduced by bending magnet location sorting.Considering the affections of random errors in measurement,both ideal sorting and realistic sorting are studied based on measured bending magnet field uniformity errors and one reasonable combination of bending magnets which can reduce the horizontal COD by a factor of 5is given as the final installation sequence of the booster bending magnets in this paper.     

Measurement of nonlinear coefficient of optical fiber based on small chirped soliton transmission

We measure the waveform and phase curves of short optical pulses before and after transmission over different lengths of fibers by use of the pulse analyzer with the frequency-resolved optical gating (FROG),and numerically simulate pulse evolution under the experimental conditions.The nonlinear coefficient of the fiber is given by comparing the experimental results with the numerical ones.Difference between the experiment and numerical simulation is analyzed.     

Resonance scattering of canonical elastic shells in absorbing fluid medium

Resonance scattering of elastic spherical shell and cylindrical shell while the surrounding fluid medium has absorption is studied. The normal mode solution derived using exact elastic theory and the separation of variables is still applicable. However, the scattering form function has to be modified for the absorbing medium, otherwise the unreasonable result would be obtained. The backscattering form function in the absorbing medium is redefined, and the form function of elastic spherical and cylindrical shell with vacuum or solid matter filled is calculated in various absorption conditions. The results show that the absorption of surrounding fluid leads to notable attenuation of the coincidence resonances in the mid-frequency, but it has a little influence on the low-frequency resonance scattering induced by the filler inside the shell.     

Single-beam self-referenced phase-sensitive surface plasmon resonance sensor with high detection resolution

A versatile and low-cost single-beam self-referenced phase-sensitive surface plasmon resonance(SPR)sensing system with ultra-high resolution performance is presented.The system exhibits a root-mean-square phase fluctuation of ±0.0028.over a period of 45 min.i.e.a resolution of±5.2×10-9 refractive index units.The enhanced performance has been achieved through the incorporation of three design elements:a true single-beam configuration enabling complete self-referencing so that only the phase change associated with SPR gets detected,a differential measurement scheme to eliminate spurious signals not related to the sensor response,and the elimination of retardation drifts by incorporating temperature stabilization in the liquid crystal phase modulato .Our design should bring the detection sensitivity of non-labeling SPR biosensing closer to that achievable by conventional fluorescence-based techniques.     

Influences of SiO2 protective layers and annealing on the laser-induced damage threshold of Ta2O5 films

Ta2O5 films are prepared on BK7 substrates with conventional electron beam evaporation deposition.The effects of SiO2 protective layers and annealing on the laser-induced damage threshold (LIDT) of the films are investigated.The results show that SiO2 protective layers exert little influence on the electric field intensity(EFI)distribution,microstructure and microdefect density but increase the absorption slightly.Annealing iS effective on decreasing the microdefect density and the absorption of the films.Both SiO2 protective layers and annealing are beneficial to the damage resistance of the films and the latter is more effective to improve the LIDT.Moreover,the maximal LIDT of Ta2O5 films is achieved by the combination of SiO2 protective layers and annealing.