共查询到16条相似文献,搜索用时 187 毫秒
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用自制常压MOCVD装置,在Si衬底上生长GaAs和AlGaAs外延层,在高温去除Si衬底表面氧化膜之后,采用两步法,即低温生长过渡层,再提高温度生长外延层。得到了表面镜面光亮的优质GaAs和AlGaAs外延层。X射线双晶衍射仪测试GaAs外延层,其回摆曲线半峰宽是200孤秒,GaAs和AlGaAs外延层在77K温度下,PL谱半峰宽分别是17meV和24meV。 相似文献
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提出了新型InGaAs/GaAs应变脊形量子线结构.这种应变脊形量子线结合了非平面应变外延层中沿不同晶向能带带隙的变化、非平面生长应变层In组分的变化,以及非平面外延层厚度的变化等三方面共同形成的横向量子限制效应的综合作用.在非平面GaAs衬底上用分子束外延生长了侧面取向为(113)的脊形AlAs/In GaAs/AlAs应变量子线.用10K光致荧光谱测试了其发光性质.用Kronig-Penney模型近似计算了这种应变脊形结构所具有的横向量子限制效应,发现其光致荧光谱峰位的测试结果,与计算结果相比,有10meV的“蓝移”.认为这一跃迁能量的“蓝移”是上述三方面横向量子限制效应综合作用的结果
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早先,我们曾报导过玻璃粘结的GaAs光阴极的工艺及性能。简言之,它的结构是:GaAs(基底)—AlGaAs—GaAs—AlGaAs—SiO_2—7056玻璃。半导体层以通常的液相外延形成。SiO_2以化学汽相沉积形成,它作为增透膜并防止与玻璃牯结的AlGaAs表面的氧化。 相似文献
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J. Novák S. Hasenöhrl I. Vávra M. Kučera 《Applied Physics A: Materials Science & Processing》2007,87(3):511-516
In this paper, we present a study of the influence of strain on the composition uniformity, phase separation and ordering
of compressive and tensile strained InGaP epitaxial layers grown on GaP and GaAs substrates. The paper demonstrates how strain,
caused by lattice mismatch, influences the spinodal-like decomposition and ordering in InGaP layers. We concentrated our efforts
on an alloy with the lattice mismatch close to a value of Δa/a=10-2. Transmission electron microscopy (TEM), low temperature photoluminescence and atomic force microscopy (AFM) were used to
demonstrate that epitaxial layers grown under compressive strain have additional properties in comparison to those ones grown
under tensile strain. The presence of ordering, spinodal-like decomposition and compositional fluctuations was studied in
relation to the sign of strain.
PACS 61.72.Lk; 68.35.Ct; 68.37.Lp; 68.35.Dv; 78.30.Fs 相似文献
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本文首次观察了用MOCVD方法生长的GaxIn1-xP外延层的能带隙移动,并给出了GaxIn1-xP外延层光荧光(PL)峰能量随组分x的变化关系,结果表明PL是探测混晶组分的简单而有效的方法之一。 相似文献
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J. Motohisa J. Takeda M. Inari J. Noborisaka T. Fukui 《Physica E: Low-dimensional Systems and Nanostructures》2004,23(3-4):298
We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar structures using selective area (SA) metalorganic vapor phase epitaxy (MOVPE). By performing growth on SiO2-masked (1 1 1)B GaAs substrates with circular or hexagonal hole openings, extremely uniform array of hexagonal GaAs/AlGaAs pillars consisting {1 1 0} vertical facets with their diameter of order of 100 nm were obtained. Unexpectedly, strong intense light emission was observed for the room temperature photoluminescence measurement of the pillar arrays in triangular lattice, which is promising for the application to the photonic crystals to enhance the light extraction efficiency from the materials with high refractive index. Furthermore, it was also found that hexagonal pillars with size 60 nm and large aspect ratio (>100) by reducing the size of initial hole size of mask, opening a possibility to grow nanowires using epitaxial growth. 相似文献
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We report on polarization dependent optical absorption for excitonic and interband transitions in lattice matched (GaAs/AlGaAs) and strained (biaxial tensile strain - GaAsP/AlGaAs; biaxial compressive strain - InGaAs/AlGaAs) multiquantum well structures in the presence of transverse electric fields. The hole states are solved by using the Kohn-Luttinger Hamiltonian and using an eigenvalue technique. The effect of heavy-hole and light-hole mixing due to the strain, electric field and quantization is studied. Under biaxial tensile strain the heavy-hole and light-hole transition can coincide, leading to interesting polarization dependent effects. Results are presented for excitonic and interband transitions. 相似文献