共查询到18条相似文献,搜索用时 156 毫秒
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GaAs/GaAlAs脊型波导交变式△β耦合器 总被引:1,自引:0,他引:1
研制了具有肖特基势垒电极的GaAs/GaAlAs双异质结脊型波导交变式△β耦合器。通过合理设计器件结构,降低波导层中载流子浓度和上、下包层中Al的含量,以及采用反应离子刻蚀和和剥离等技术,使器件总损耗降为10dB,消光比为26.8dB,器件在1.3μm下实现单模工作。 相似文献
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在理论分析设计的基础上,进行了GaAs/GaAlAs定向耦合器型波调制器试验,建立了器件行波电极微波特性的测试系统,由此系统进行实验确定器件最佳结构参数,完成器件的制作,器件采用共平面波电极,击穿电压28V。用1.06μmYAG激光器进行测试,开关电压8.5V。由微波网络分析仪测试器件行波电极的微波特性,测得电极中微波与波导中光波间的速率失配小于3%,且在30GHz下,微波传输损耗小于30dB表明 相似文献
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GaAs/GaAlAs定向耦合器型行波调制器:1.设计 总被引:1,自引:0,他引:1
从理论上重点分析和研究了器件行波电极的微波特性,在半绝缘GaAs衬底上设计了具有n^+重掺杂外延层和共平面电极的GaAs/GaAlAs定向耦合器型行波调制器,针对实验中发现的行波电极上微波的高传输损耗问题。分析了起因并提出了器件的改进设计方案,从而设计出可达到35GHz带宽的高速调制效应的光波导调制器。 相似文献
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GaAs中的离子注入技术 总被引:1,自引:0,他引:1
在GaAs集成电路和器件研制中,离子注入是关键技术之一.介绍了用离子注入GaAs形成n型和p型区,以及离子注入p型和n型GaAs形成绝缘层、形成n+GaAs深埋层等重要技术.对有关物理机制进行了讨论并提出了一些新见解;该离子注入新工艺已经应用于GaAs器件和集成电路的研制,获得了多种新型器件. Optical and electrical properties of Si GaAs wafers implanted with Si+, S+, Be+, Mg+, B+, O+ have been investigated in this paper. 相似文献
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集成光学TM模偏振器的制作 总被引:2,自引:0,他引:2
用扩钛和质子交换相结合的方法在x切y传LiBnO3衬底上制成了TM模集成光波导偏振器。质子交换区位于扩钛波导的末端两侧。在质子交换区域Δne〉0,Δn0〈0,因此TE模辐射进入衬底。偏振器工作于1.3μm波长,消光比优于47dB,光纤0-波导-光纤插入损耗3.5dB。 相似文献
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采用分子束外延技术生长含有大周期数的GaAs/GaAlAs多量子阶(MQW)及分布布喇格反射器(DBR)的PIN结构器件。研究了量子限制斯塔克效应(QCSE),分布布喇格反射及非对称腔模(ASFP)效应对光的反射调制作用及这三种效应的兼容性对光调制及逻辑器件的重要影响。给出我们研制的反射型光调制器及自电光效应器件的实验结果。对于常通型及常闭型调制器,其两态衬比度可达10dB。所研制的SEED器件,其导通光能耗低于10fJ/(μm) ̄2,实现其光学双稳态及R-S光触发器工作。 相似文献
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Acrylic-based asymmetric and variable couplers have been developed using a single structured Y-branch design with a high-index-contrast
waveguide taper and a void structure for fiber attenuation using the lateral displacement of two fibers. Device fabrication
is performed by producing the device structure on an acrylic block using a computer numerical control (CNC) machine tool.
The fabricated device has an excess loss of 5.85 dB, while the coupling ratios are 56.86 and 43.14% when the device is operated
as a 3 dB coupler. In the asymmetric coupler mode, the coupling ratio ranges from 44.84 to 8.01% for port 1 and 55.16 to 91.99%
for port 2. The excess loss of this device varies from 5.42 to 7.64 dB. In the variable coupler mode, the coupling ratio ranges
from 10.09 to 32.88% for port 1 and from 89.91 to 67.12% for port 2. The excess loss of the device varies from 5.85 to 8.49
dB. 相似文献
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Abang Annuar EHSAN Sahbudin SHAARI Mohd Kamil ABD.RAHMAN Kee Mohd Rafique KEE ZAINAL ABIDIN 《光子学报》2008,37(5):849-854
An optical code generating device for security access system application is presented. The code generating device constructed using asymmetric hollow optical waveguide coupler design provides a unique series of output light intensities which are successively used as an optical code. The design of the waveguide is made using two major components which are asymmetric Yjunction splitter and a linear taper. Waveguiding is done using a hollow waveguide structure. Construction of higher level 1×N hollow waveguide coupler is done utilizing a basic 1×2 asymmetric waveguide coupler design together with a cascaded design scheme. Nonsequential ray tracing of the asymmetric hollow optical waveguide couplers is performed to predict the optical transmission properties of the waveguide. A representation of the code combination that can be generated from the device is obtained using combinatory number theory. 相似文献
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Pruessner MW Khurgin JB Stievater TH Rabinovich WS Bass R Boos JB Urick VJ 《Optics letters》2011,36(12):2230-2232
We experimentally demonstrate a new type of add-drop filter incorporating an asymmetric Y-branch waveguide coupler and a shifted-grating mode-conversion cavity. The device relies on mode separation in the asymmetric Y-branch and wavelength-selective mode conversion upon reflection from the shifted-grating cavity. Add-drop functionality is demonstrated in a three-port integrated silicon-on-insulator device. 相似文献
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Lin ZhiLang Cheng XinLi Wang YongJin Cao GongBai Jia XiaoLin Zhang Feng 《Optics Communications》2004,240(4-6):269-274
A novel compact 3-dB coupler is proposed and fabricated in silicon-on-insulator. The new coupler provides large output waveguide spacing of 125.0 μm with short device length of 867.0 μm and large cross-section of 6.0 × 4.0 μm. The device length can be remained essentially unchanged even when the output spacing is further enlarged to realize the complex applications in photonic integrated circuits. The fabricated device exhibits excess loss of 6.3 dB and low imbalance of 0.26 dB. 相似文献
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The authors propose a high-performance 980 / 1550-nm wavelength multiplexer / demultiplexer based on the restricted-resonance self-imaging effect in a buried-type waveguide system. The device functions either as a multiplexer or a demultiplexer, depending upon the direction of light propagation. Using the modal propagation analysis (MPA), characteristics of the device are investigated. We carried out the design of the device and showed that the device performance can be optimized by appreciate selection of the coupler width. A demultiplexer with an insertion loss of 0.4 dB and contrast of 25.5 dB at wavelength 1550 nm and 32 dB at 980 nm is demonstrated. 相似文献
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跑道形玻璃波导谐振腔滤波器的研制 总被引:6,自引:5,他引:1
采用Ag+-Na+离子工艺,在K9玻璃上制备了跑道形波导谐振腔滤波器.测试得到该滤波器自由光谱范围为FSR=0.177 nm,对比对为Cr=7.5 dB.同时分析得到耦合器的耦合系数为κ=0.916,耦合器和环形腔的损耗因子分别为δ=0.55,γ=0.48.耦合器的两波导几乎相连、条波导边缘不规则和一次离子交换波导表面缺陷是造成该波导滤波器具有较大损耗的主要原因.通过改进工艺技术降低波导损耗,该滤波器可以用于光通信、传感等领域,也可与其它波导结构相结合实现新的功能. 相似文献