Crossed Andreev reflection in graphene-based ferromagnet-superconductor structures

We report a theoretical investigation of the spin-polarized transport of relativistic electrons through a three-terminal graphene-based superconductor bipolar transistor with ferromagnetic leads. It is found that the magnetoresistance in such a system can be improved largely in comparison with that in the corresponding two-terminal structure due to the existence of the special crossed Andreev reflection, which is quite different from that in the conventional three-terminal ferromagnet-superconductor devices. The physical origination for such a phenomenon has also been analyzed. We also find that the non-local conductivity can not only exhibit different feature for parallel and antiparallel alignment, it is also easily tuned by the external magnetic field and the bias voltage.     

One-Dimensional Relativistic Dissipative System with Constant Force and its Quantization

For a relativistic particle under a constant force and a linear velocity dissipation force, a constant of motion is found. Problems are shown for getting the Hamiltonian of this system. Thus, the quantization of this system is carried out through the constant of motion and using the quantization on the velocity variable. The dissipative relativistic quantum bouncer is outlined within this quantization approach. PACS: 03.30.+p, 03.65.−w, 45.05.+x, 45.20Jj     

Response model of resistance-type microbolometer

There are certain limitations in the application of uncooled focal plane array (FPA) detectors owing to the shortage of the response model that transforms bias voltage to analog output voltage at a certain constant radiation power; Moreover, bias voltage affects the input radiation gain. In this study, we established a response model of a microbolometer through examining the detection theory of a microbolometer and the heat balance equation under the condition of the pulse voltage bias. In the establishment process, we simplified the heat balance equation in order to acquire a simple answer. The experimental data show that, in the full variable range of bias voltages, the biggest difference between the model data and the experiment data is about 0.7 K. This model can reflect the real responses of microbolometers with only small differences, which are acceptable in engineering applications.     

铁电薄膜可调带通滤波器

铁电薄膜的介电常数随外加电场强度的增加而减小.依据铁电薄膜的这一特性,提出了一种新颖的基于共面传输线结构的铁电薄膜可调带通滤波器.为了减小传输损耗,滤波器的导体部分由超导薄膜构成.滤波器的输入输出采用抽头线的方式分别与谐振器相接,外加电压通过输入输出端口直接施加到共面谐振器缝隙处的铁电薄膜上,用以改变铁电薄膜的介电常数,从而改变谐振器的谐振频率,实现带通滤波器通带频率的移动.这种新型可调带通滤波器具有结构紧凑、尺寸小及施加外加偏压容易等优点.仿真结果表明:铁电薄膜的介电常数在外加偏压下从250减小到150时,带通滤波器的传输特性曲线的形状基本保持不变,通带的中心频率从10.283GHz增加到10.518GHz,其3dB带宽保持在0.150GHz左右,反射损耗始终小于-17dB.     

偏压在隧道效应中的作用

从隧道扫描势垒模型出发。用量子力学导出隧道电流与针尖间的偏压、间距及它们的逸出功之间的关系,并从能带模型的角度导出样品与针尖的间距不变时,隧道电流与偏压成正比关系．指出偏压的作用主要是提高针尖上电子的能量,使针尖上的电子比样品上的电子更容易穿过势垒,从而形成隧道电流．     

Extended relativity: Mass and the fifth dimension

A self-consistent relativistic formalism is presented which postulates that mass is the eigenvalue of a fifth momentum operator component. Lorentz covariance is generalized so that a systematic program for covariant wave equations can be formed. The fifth dimension is identified with cosmic time, resulting in a bias toward matter over antimatter for the universe. A distinction between μ ande also seems possible through the space-time extension.     

超导SIS结偏置源电路的设计

针对超导SIS隧道结器件的传输特性,设计和制备了为超导SIS器件提供直流偏置的电路,该偏置源电路采用恒压源与恒流源合二为一的技术,恒压源采用了电压深度负反馈设计,恒流源采用了电流反馈法。并用MULTISIM10对电路进行仿真和参数验证。利用该偏置源对SIS结进行供电实测,取得了良好效果。实现了高稳定度、高精度、低噪声的电路设计。     

Enhancement of Resonant Activation by Constant Bias Current for Superconducting Junction

We consider a superconducting(Josephson) junction driven by the thermal noise with an ac drive current and a dc constant bias current in the overdamped case and in the underdamped case,respectively,and investigate the effect of the constant bias current on the evolution of the net voltage versus the driving frequency.It is shown that,with some suitably selected values of the system's parameters,suitably increasing the absolute value of the constant bias current can lead to the enhancement of resonant activation of the net voltage versus the driving frequency.This result can benefit the investigation for the Josephson junction subjected to the constant bias current(or voltage).     

Bias stress effect in low-voltage organic thin-film transistors

The bias stress effect in pentacene organic thin-film transistors has been investigated. The transistors utilize a thin gate dielectric based on an organic self-assembled monolayer and thus can be operated at low voltages. The bias stress-induced threshold voltage shift has been analyzed for different drain-source voltages. By fitting the time-dependent threshold voltage shift to a stretched exponential function, both the maximum (equilibrium) threshold voltage shift and the time constant of the threshold voltage shift were determined for each drain-source voltage. It was found that both the equilibrium threshold voltage shift and the time constant decrease significantly with increasing drain-source voltage. This suggests that when a drain-source voltage is applied to the transistor during gate bias stress, the tilting of the HOMO and LUMO bands along the channel creates a pathway for the fast release of trapped carriers.     

High-performance optical modulators bias control system without dither

A software-based bias control system of push–pull Mach–Zehnder modulators (MZMs) without dither tone is described in this paper. The slope of the average optical output power respect to the bias voltage is used to control the operating bias points in the automatic control system. The paper analyses the theory of automatic bias control intensively and verifies the effectiveness of the proposed technique which is a modulation-format-free method under the RF signal through testing and contrasting the BER (bit error rate) between the new technique and manual measure on the experimental platform. Based on this, an automatic bias control system set up by an optical QPSK composed by double MZMS on the LabVIEW platform is described.     

Current-influenced voltage noise in bulk polycrystalline high-Tc superconductors

The 1/f voltage noise in bulk polycrystalline high-temperature superconductors (HTSC) under bias current and magnetic field has its origin in the noise current-dependence of the grain boundary junctions (GBJs), due in turn to the correlated effects of junction critical current and normal resistance fluctuations. The analogy between the results obtained by varying the bias current through the specimen and those performed with temperature as variable is evidenced. The noise maxima obtained in both sets of measurements turn out to be caused by the junction critical current fluctuations, which dominate when the currents flowing through the GBJs are close to the Josephson critical current. The anti-phase correlation between the normal resistance and the critical current fluctuations is responsible for the monotonical decrease of the noise at constant bias current, with the temperature exceeding the value corresponding to the noise maximum. In contrast, varying the bias current at fixed temperature, the voltage noise exhibits a local minimum followed by an increasing tendency after passing through the maximum.     

Coherent transmission of nodal Dirac fermions through a graphene-based superconducting double barrier junction

Transport characteristics of relativistic electrons through graphene-based d-wave superconducting double barrier junction and ferromagnet/d-wave superconductor/normal metal double junction have been investigated based on the Dirac–Bogoliubov–de Gennes equation. We have first presented the results of superconducting double barrier junction. In the subgap regime, both the crossed Andreev and nonlocal tunneling conductance all oscillate with the bias voltage due to the formation of Andreev bound states in the normal metal region. Moreover, the critical voltage beyond which the crossed Andreev conductance becomes to zero decreases with increasing value of superconducting pair potential α. In the presence of the ferromagnetism, the MR through graphene-based ferromagnet/ d-wave superconductor/normal metal double junction has been investigated. It is shown that the MR increases from exchange splitting h ₀=0 to h ₀=E _F (Fermi energy), and then it goes down. At h ₀=E _F, MR reaches its maximum 100. In contrast to the case of a single superconducting barrier, Andreev bound states also manifest itself in the zero bias MR, which result in a series of peaks except the maximum one at h ₀=E _F. Besides, the resonance peak of the MR can appear at certain bias voltage and structure parameter. Those phenomena mean that the coherent transmission can be tuned by superconducting pair potential, structure parameter, and external bias voltage, which benefits the spin-polarized electron device based on the graphene materials.     

The effect of bias voltage and working pressure on S/Mo ratio at MoS2-Ti composite films

S/Mo ratio has a crucial effect on the tribological properties of MoS₂-Ti composite films. The deposition parameters as such bias voltage and working pressure play a dominant role on the change of this ratio value. To determine the effect of working pressure and bias voltage on S/Mo ratio, MoS₂-Ti composite films were deposited on glass wafers by pulsed-dc magnetron sputtering (PMS). The deposition process was performed for nine different test conditions at various levels of target current, working pressure, and substrate voltage using the Taguchi L₉(3⁴) experimental method. It was observed that the chemical composition of MoS₂-Ti composite films was significantly affected by sputtering parameters. It was also observed that S/Mo ratio decreased as the bias voltage increased at a constant working pressure and S/Mo ratio increased with increasing working pressure at a constant bias voltage.     

Stability of the Relativistic Maxwellian in a Collisional Plasma

The relativistic Landau-Maxwell system is the most fundamental and complete model for describing the dynamics of a dilute collisional plasma in which particles interact through Coulombic collisions and through their self-consistent electromagnetic field. We construct the first global in time classical solutions. Our solutions are constructed in a periodic box and near the relativistic Maxwellian, the Jüttner solution.Acknowledgements The research is supported in part by NSF grants.     

The influence of strong bias voltage on the electrical and magnetic properties of the amorphous Gd-Co films

Some electrical and magnetic properties of Gd-Co films obtained by dc sputtering with bias voltage V_b are discussed. We observed a decrease in the compensation temperature and in the anomalous Hall resistivity with increasing bias voltage while the specific resistivity increases. The anisotropy constant, however, increases up to V_b = -200 V, where it reaches a maximum and then it decreases. Electrical conductivity of the films prepared with V_b greater than -100 V showed tunneling character. We conclude that not only resputtering of Gd atoms but also oxidation of Gd takes place during deposition when bias voltage is applied.     

相对论电子束在离子通道中的聚焦与输运

 基于单粒子理论,描述了相对论电子束在离子通道中的聚焦输运过程,讨论了离子-电子密度比、相对论因子、束加速电压和入射电流等系统参数对电子束的聚焦半径、纵向聚焦位置的影响。研究表明,离子通道对电子束具有强烈的聚焦效应,束流在离子通道内的传输是类周期波动传输,随传输距离增加,聚焦点处的半径逐渐增加,束流的波动幅度逐渐减小。选择适当的系统参数,可调节束聚焦点位置和聚焦点半径的大小,实现电子束的长距传输并且减少电子束的耗散。     

Study on typical behavior of transient nature (I-t) and hysterisis nature of I–V characteristics of dye doped solid state thin film photoelectrochemical cell

In this present investigation, we describe the steady state current voltage (I–V) characteristic of Crystal violet dye dispersed solid state photoelectrochemical cell (PEC). Typical behavior of dark current-voltage characteristic by increasing and decreasing external bias voltage has a similar form like hysterisis in nature. Although we have already observed this hysterisis nature in case of both forward and reverse bias condition, yet it is clear that the reverse hysterisis curve is more prominent than forward hysterisis. In this paper, we are getting double values of current (I) for a single value voltage, which is also helpful to understand the charge transport process through disordered materials. As the bias increases, the distribution of traps depth, which is exponential in nature, changes toward order state (resulting increase in disordered parameter α) This means that as α increases, it tends to reach the most order state of material. When external bias voltage is at 3.5 V, the value of disorder parameter becomes 1, and when bias voltage is beyond 3.5 V, the diffusion comes enhanced in nature.     

Path integral for the relativistic particle and harmonic oscillators

The action for a massive particle in special relativity can be expressed as the invariant proper length between the end points. In principle, one should be able to construct the quantum theory for such a system by the path integral approach using this action. On the other hand, it is well known that the dynamics of a free, relativistic, spinless massive particle is best described by a scalar field which is equivalent to an infinite number of harmonic oscillators. We clarify the connection between these two—apparently dissimilar—approaches by obtaining the Green function for the system of oscillators from that of the relativistic particle. This is achieved through defining the path integral for a relativistic particle rigorously by two separate approaches. This analysis also shows a connection between square root Lagrangians and the system of harmonic oscillators which is likely to be of value in more general context.     

Effect of Bias Voltage on Microstructure and Mechanical Properties of Nanocomposite ZrCN Films Deposited by Filtered Cathodic Vacuum Arc

Nanocomposite ZrCN films consisting of nanocrystalline ZrCN grains embedded in nitrogen-doped amorphous carbon film are deposited by filtered cathodic vacuum arc technology under different bias voltages ranging from 50to 400 V.The influence of bias voltage on the characterization and the mechanical properties of the ZrCN films are investigated by x-ray diffraction,x-ray photoelectron spectroscopy,scanning electron microscopy,transmission electron microscopy,Raman spectroscopy and nano-indentation.The bias voltage has a subtle effect on the ZrCN grain size,which is around 9.5 nm and keeps almost constant.A slight increase of the bias voltage induces a relatively high sp~3 fraction about 40%in N-doped amorphous C films but leads to the graphitization of the films under a higher voltage.The best mechanical property of the ZrCN film with the hardness of 41 GPa is obtained under the bias voltage of 200 V,indicating the positive effect of slight increase of ion bombardment on the hardness of the films.