XP Power的AC／DC开关电源可设定任意所需电压

M／A-COM公司推出两款符合RoHS规范的开关产品MASW-007587和MASW-007588，适用于WiMAX和MESH等需要大功率、低插入损耗及高隔离度的应用。MASW-007587 dpdt开关可工作在DC至4GHZ频率范围内，PldB为40dBm，插入损耗为1dB，绝缘度达30dB。典型应用如需要发送和接收双天线的多开关线性系统。     

带Boost型PFC和单开关DC／DC变流器的优越的1000W AC／DC电源能够替代有多开关拓扑的电源

本文分析了一个由Boost型PFC和前向变流器组成的单开关SMPS的电能容量。由于使用了现代无源和有源设备（磁性材料，半导体），这种拓扑的电能应用范围延伸到了通常应用多开关拓扑的领域（大约1kW）。文章对现今关于简单SMPS拓扑的限制进行了理论分析，实际设计，并对一个变流器进行测试。文章最后提出了一些单开关电源拓扑的设计原则。     

具60V瞬态保护的36V输入降压型DC／DC转换器

LT3682具有3．6～36V输入电压范围和60V的瞬态电压承受能力,因而使其非常适合于汽车应用中常见的负载突降和冷车发动情况。性能特点：1A输出电流;低纹波（〈15mVp-p）突发模式工作：     

开关型电压变换器ADP3000的特性与应用

ADP3000是ANALOG DEVICES公司推出的微功耗开关型DC／DC变换芯片。可用于升压或降压。它具有固定输出和可调输出两种输出方式。其标准输出电流为150mA。同时具有转换效率高、电压适应性好、外围元件少等优点，特点适合于低功耗手持式设备及需要不同供电电压的电子设备等场合使用。文中介绍了ADP3000的主要特性、工作原理和应用电路。     

DC／AC三相软开关PWM逆变器的研究

常规的PWM逆变电路中，电力电子开关器件在大电压下导通，大电流下关断，处于强迫开关过程，因而存在开关损耗大，工作频率低，体积大及电磁干扰严重等缺点。本文在理论分析的基础上，将PWM调制技术与软开关技术相结合，利用单片机和大规模PWM集成芯片，设计了一个用于异步电机驱动的三相SPWM调制型的开环VVVF控制的软开关逆变器电路的控制方案，对几个关键性电路的工作原理作了较为详细的分析说明，给出了部分实际的电路形成和运行结果。     

飞兆半导体推出光隔离MOSFET栅极驱动器能够驱动工业应用中高达30A／1200V的MOSFET

FOD3180/FOD3181与京兆半导体领先业界的功率产品系列相辅相成,为设计人员提供由毫瓦至千瓦的完整功率解决方案     

具备60V瞬态保护的36V输入、双输出跟踪、3．5A（10UT）、2．25MHz、降压型DC／DC转换器

凌力尔特公司（Linear Technology Corporation）推出单片双输出降压型开关稳压器LT3692,该器件可提供每通道高达3．5A的连续输出电流。LT3692在3V至36V的输入电压范围内工作,并具有60V瞬态保护,使其可理想地用于汽车应用中负载突降和冷车发动的情况。每通道独立的输入、停机、反馈、软启动、限流和比较器引脚简化了复杂的电源跟踪／排序要求。     

A 30 V Self-Aligned Metal/Poly-Si Replacement Gate Planar DMOS for DC/DC Converters

In this letter, a novel self-aligned metal/poly-Si gate planar double-diffused MOS (DMOS) is proposed and demonstrated for high-switching-speed and high-efficiency dc/dc converter applications. The self-aligned metal/poly-Si gate is realized by a replacement gate technology. The fabricated metal/poly-Si gate planar DMOS has a breakdown voltage of 36 V and a threshold voltage of 2.1 V. The gate sheet resistance of the metal/poly-Si gate is around 0.2 Omega/square, which is 50 times lower than that of the polysilicon gate. The low sheet resistance reduces the switching time as well as the power loss of the device during switching. For a device with a drain current of 69 A/cm², the turn-on and turn-off times are reduced from 29 to 25 ns and from 36 to 31 ns, respectively. The turn-on and turn-off switching energy losses are reduced by 22% and 15%, respectively     

Current-source parallel-resonant DC/AC inverter with transformer

This paper gives the theory and experimental results for a current-source parallel-resonant inverter with a transformer used to change voltage levels and provide isolation. The analysis is performed in the frequency domain using Fourier series techniques to predict output power, efficiency, DC-to-AC voltage transfer function, and component voltage and current stresses. The inverter consists of two switches, a large choke inductor, a transformer, and a parallel-resonant circuit. The magnetizing inductance of the transformer is used as the inductance of the parallel-resonant circuit, thereby requiring one less component. Each switch consists of a MOSFET in series with a diode. The MOSFETs have their sources grounded so there is no need for a complicated gate-drive circuit. An inverter was designed and constructed. The DC input voltage was 156 V and the output voltage was a sine wave with a peak value of 224 V at an operating frequency of 50 kHz. The output power at full load was 100 W     

Comparison of the electro-thermal constraints on SiC MOSFET and Si IGBT power modules in photovoltaic DC/AC inverters

This article presents a comparative study between SiC MOSFETs and Si IGBTs regarding changes in their junction temperature in a PV inverter application. The estimation of these variations is made by introducing the current mission profiles extracted from a photovoltaic plant over one year into a calculation tool. The latter is based on a losses model and a thermal model including a coupling between them. The calculation of the losses in SiC MOSFETs in the 3rd quadrant is detailed. The results are the mission profiles of the junction temperature of semiconductors, which allow for determining and comparing the thermal constraints in SiC MOSFET and Si IGBT power modules.     

Highly Power‐Efficient Rack‐Level DC Power Architecture Combined with Node‐Level DC UPS

This letter presents a highly efficient rack‐level DC power architecture combined with a node‐level DC uninterruptible power supply (UPS). The proposed system can provide almost the equivalent power efficiency of a high‐voltage DC data center without any change in the existing power infrastructure. The node‐level DC UPS combined with a power distribution board provides high power efficiency as well as lower UPS installation costs. Implemented on a rack, the entire power system can be monitored through a network.     

An AC/DC converter with high power factor

The television receiver often employs a capacitor-input-type rectifier. In this case, it is regulated as a class D piece of equipment. This paper presents a novel ringing-choke-converter-type switching regulator, which functions as an active filter. The proposed circuit features a simple circuit configuration and cost effectiveness. It achieves a high power factor of about 0.95 and reduces current harmonics (third, fifth, and seventh) in the AC input current to less than 40% of the limit value for class D. The voltage across the input smoothing capacitor does not show large variations and the components in the conventional ringing-choke converter can be used unmodified. Ripple content of the DC output voltage shows a slight increase and is the subject for future research.     

Single-switch AC/DC converter with power factor correction

A single-switch, one-stage power factor correction converter with output electrical isolation is proposed. To relieve the voltage spike caused by the leakage inductance of the power transformer, two bulk storage capacitors are used. The proposed converter has both a good power factor correction and excellent line and load regulation capabilities with an efficiency of 87%     

一种55 V输出小功率DC/DC变换器的设计

介绍了一种小功率混合集成DC/DC变换器的设计思想、实现方法及测试结果。设计的电路采用光隔离单端反激式拓朴结构和混合集成工艺技术制作,输出电压为55 V,输出功率小于2W,工作温度为-55~105℃,体积为27 mm×27 mm×6.5 mm。该电路具有电压稳定、精度高、纹波小、调整率优良和可靠性高等特点,可应用于各类精密电子设备中。     

一种非线性控制的PFC Cuk AC/DC变换器

主要分析了不连续导电(DCM)模式下，基于非线性单周期控制的Cuk有源PFC电路的工作原理，给出了设计实例和仿真结果，证明了理论分析的正确性。     

High frequency resonant AC/DC rectifier with unity power factor

A novel high frequency switching rectifier, termed the quantum boost series resonant rectifier (QBSRR), is proposed. This rectifier provides the input line AC with a unity power factor. With this proposed scheme, several advantages such as low switching loss and wide output voltage range can be obtained.<>