Structural and electrical properties of iron molybdenum phosphate glasses

Summary  Iron molybdenum phosphate glasses [xMoO₃ · (0.6 -x)P₂O₅ · 0.4Li₂O] :yFe₂O₃ with 0 ≤x ≤ 0.6 andy = 0.03 (mol%) prepared in ambient atmosphere using the melt quenching technique were studied by using DC electrical conductivity,⁵⁷Fe M?ssbauer and infrared spectroscopies. The DC conductivity depends on the MoO₃ concentrationx. It was observed that, with increasingx, the ratio Fe²⁺ /(Fe³⁺ + Fe²⁺) and the DC conductivity increase. Infrared spectroscopy and X-ray powder diffraction indicate that a Li₂ MoO₄ crystalline phase is present for high MoO₃ content samples (x = 0.5, 0.6). This work was partly sponsored by FINEP, CNPq (Brazilian agencies) and UECE (Universidade Estadual do Cearà).     

Unique electrical properties of nanostructured diamond cones

The preparation and electrical properties of diamond nanocones are reviewed, including a maskless etching pro- cess and mechanism of large-area diamond conical nanostructure arrays using a hot filament chemical vapor deposition （HFCVD） system with negatively biased substrates, and the field electron emission, gas sensing, and quantum transport properties of a diamond nanocone array or an individual diamond nanocone. Optimal cone aspect ratio and array density are investigated, along with the relationships between the cone morphologies and experimental parameters, such as the CH4/H2 ratio of the etching gas, the bias current, and the gas pressure. The reviewed experiments demonstrate the possi- bility of using nanostructured diamond cones as a display device element, a point electron emission source, a gas sensor or a quantum device.     

Structural, optical and scintillation properties of cerium cyclotriphosphates and polyphosphates

The cerium cyclotriphosphate CeP₃O₉·3H₂O and polyphosphate Ce(PO₃)₃ have been optically investigated for the first time. In both materials, excitation and emission spectra under UV and X-ray excitations as well as emission decays of Ce³⁺ were measured at room temperature. The spectroscopic results of anhydrous Ce(PO₃)₃, prepared by progressively heating the corresponding CeP₃O₉. 3H₂O, are discussed and correlated with the structural data.For the Ce(PO₃)₃ polyphosphate material, the Stokes shift of the d-f emission is very small (760 cm⁻¹), inducing an efficient ultraviolet luminescence and a new application as scintillator.     

Structural and electrical properties of granular metal films

Granular metal films (50–200,000 Å thick) were prepared by co-sputtering metals (Ni, Pt, Au) and insulators (SiO₂, Al₂O₃), where the volume fraction of metal, x, was varied from x = 1 to x = 0.05. The materials were characterized by electron micrography, electron and X-ray diffraction, and measurements of composition, density and electrical resistivity at electric fields ε up to 10⁶ V/cm and temperatures T in the range of 1.3 to 291 K. In the metallic regime (isolated insulator particles in a metal continuum) and in the transition regime (metal and insulator particles in a metal continuum) and in the transition regime (metal and insulator labyrinth structure) the conduction is due to percolation with a percolation threshold at x?0.5. Tunnelling measurements on superconductor-insulator-granular metal junctions reveals that the transition from the metallic regime to the dielectric regime (10–50 Å size isolated metal particles in an insulator continuum) is associated with the breaking up of a metal continuum into isolated metal particles. In the dielectric regime the temperature dependence of the low-field resistivity is given by ρL = ρo exp [2√(C/kT)], and the field dependence of the high-field, low-temperature resistivity is given by ρH = ρ∞ exp (εo/ε), where ρo, ρ∞, C, and εo are material constants. A simple theory based on the assumption that the ratio s/d (d-metal particle size and s-separation between particles) is a function only of composition yields expressions for ρ(ε, T) in excellent agreement with experiment. Furthermore, the theory predicts the experimental finding that the resistivity can be expressed in terms of a universal function of the reduced variables kT/C and ε/εo. The inter-relationship between all the important physical properties of granular metals and their structure is also discussed.     

Structural phase transition and elastic properties of cerium chalcogenides at high pressure

The structural and elastic properties of cerium chalcogenides (CeZ, Z = S, Se, Te) under high pressure have been investigated by using the potential model considered up to third nearest neighbor interaction. The computed values of B1-B2 phase transition pressure, equation of state (compression curve), bulk modulus, its first order pressure derivative and elastic constants in the case of cerium chalcogenides agree well with the experimental results. The present study shows the anomalous behavior of cerium chalcogenides in comparison to the alkaline earth chalcogenides, due to the presence of Kondo effect and reentrant valence behavior of Ce in cerium chalcogenides.     

Structural and optical properties of electrohydrodynamically atomized TiO2 nanostructured thin films

In this paper, we report an alternate technique for the deposition of nanostructured TiO₂ thin films using the electrohydrodynamic atomization (EHDA) technique using polyvinylpyrrolidone (PVP) as a stabilizer. The required parameters for achieving uniform TiO₂ films using EHDA are also discussed in detail. X-ray diffraction results confirm that the TiO₂ films were oriented in the anatase phase. Scanning electron microscope studies revealed the uniform deposition of the TiO₂. The purity of the films is characterized by using Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS), confirming the presence of Ti–O bonding in the films without any organic residue. The optical properties of the TiO₂ films were measured by UV-visible spectroscopy, which shows that the transparency of the films is nearly 85% in the visible region. The current–voltage (I–V) curve of the TiO₂ thin films shows a nearly linear behavior with 45 mΩ?cm of electrical resistivity. These results suggest that TiO₂ thin films deposited via the EHDA method possess promising applications in optoelectronic devices.     

Structural and electrical properties of evaporated Fe thin films

Series of Fe thin films have been prepared by thermal evaporation onto glass and Si(1 0 0) substrates. The Rutherford backscattering (RBS), X-ray diffraction (XRD), Scanning electron microscopy (SEM) and the four point probe techniques have been used to investigate the structural and electrical properties of these Fe thin films as a function of the substrate, the Fe thickness t in the 76-431 nm range and the deposition rate. The Fe/Si samples have a 〈1 1 0〉 for all thicknesses, whereas the Fe/glass grows with a strong 〈1 0 0〉 texture; as t increases (>100 nm), the preferred orientation changes to 〈1 1 0〉. The compressive stress in Fe/Si remains constant over the whole thickness range and is greater than the one in Fe/glass which is relieved when t > 100 nm. The grain size D values are between 9.2 and 30 nm. The Fe/glass films are more electrically resistive than the Fe/Si(1 0 0) ones. Diffusion at the grain boundary seems to be the predominant factor in the electrical resistivity ρ values with the reflection coefficient R greater in Fe/glass than in Fe/Si. For the same thickness (100 nm), the decrease of the deposition rate from 4.3 to 0.3 Å/s did not affect the texture and the reflection coefficient R but led to an increase in D and a decrease in the strain and in ρ for both Fe/glass and Fe/Si systems. On the other hand, keeping the same deposition rate (0.3 Å/s) and increasing the thickness t from 76 to 100 nm induced different changes in the two systems.     

Structural,electrical and catalytic properties of ion-implanted oxides

The potential application of ion implantation to modify the surfaces of ceramic materials is discussed. Changes in the chemical composition and microstructure result in important variations of the electrical and catalytic properties of oxides.     

Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films

We investigate the structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond(UNCD)films. Impedance spectroscopy measurements show that the impedance of diamond grains is relatively stable, while that of grain boundaries(GBs)(R_b) significantly increases after the C~+ implantation, and decreases with the increase in the annealing temperature(T_a) from 650℃ to 1000℃. This implies that the C~+ implantation has a more significant impact on the conductivity of GBs. Conductive atomic force microscopy demonstrates that the number of conductive sites increases in GB regions at T_a above 900℃, owing to the formation of a nanographitic phase confirmed by high-resolution transmission electronic microscopy. Visible-light Raman spectra show that resistive trans-polyacetylene oligomers desorb from GBs at T_a above 900℃, which leads to lower R_b of samples annealed at 900 and 1000℃. With the increase in T_a to 1000℃, diamond grains become smaller with longer GBs modified by a more ordered nanographitic phase, supplying more conductive sites and leading to a lower R_b.     

Structural and electrical properties of lanthanum-substituted lead titanate ceramics

The effect of lanthanum substitution on the structural, dielectric and piezoelectric properties of lead calcium titanate (PCT) ceramics is studied. Samples with compositional formula Pb_{0.76? x} La _x Ca_0.24Ti_0.98Mn_0.02O₃ (PLCT) (x?=?0–0.08, in steps of 0.02) were prepared by the conventional dry ceramic technique. Phase and structural analysis was carried out using XRD and SEM respectively. X-ray analysis confirmed the formation of single-phase compound with tetragonal crystal structure. Dielectric properties were studied in detail as a function of frequency and temperature. The Curie temperature (T _C) and tetragonality (c/a) was found to decrease with increase in lanthanum content. The Curie temperature was also confirmed from the thermal-expansion behaviour of the sintered samples. Piezoelectric coefficients (d ₃₃, d ₃₁, g ₃₃, g ₃₁, g _h, d _h, k _t and k _p) were measured at room temperature. From this study it is found that La³⁺ substitution helps in the improvement of electro-mechanical anisotropy.     

Humidity effect on electrical properties of layered α-zirconium phosphate

The electrical properties of alkali ions exchanged zirconium hydrogen phosphate Zr(HPO₄)₂·H₂O (α-ZrP) are investigated by impedance spectroscopy technique. Cole-cole plots are used to describe the characteristic changes of electrical properties with relative humidity. The evaluated bulk resistance from the equivalent circuit shows exponential dependence of relative humidity. The surface protons of layered (α-ZrP) contribute to electrical conduction. The largest sensitivity is obtained for K ion exchanged systems.     

Structural and electrical properties of (BEDT-TTF)(TCNQ)

An organic complex (BEDT-TTF)(TCNQ) (BEDT-TTF: bis(ethylene-dithio) tetrathiafulvalene, TCNQ: tetracyanoquinodimethane) crystallizes in two different phases: the monoclinic phase and the triclinic phase. In the triclinic phase the TCNQ molecules are stacked face to face, whereas the BEDT-TTF molecules are arranged side by side along the TCNQ stacks. This complex undergoes a metal-semiconductor transition a little above room temperature. The measurement of anisotropic thermoelectric power shows that the electron conduction on the TCNQ column is superior to the hole conduction on the BEDT-TTF only along the stacking direction of TCNQ and only above the phase transition. This result is consistent with the tight-binding band structure calculation.     

Structural and electrical properties of ZnO-doped 8 mol% yttria-stabilized zirconia

8 mol% Yttria-stabilized zirconia (8YSZ) powder was prepared by coprecipitation. ZnO (0.5, 1.0, 2.0, 5.0, 10.0 wt.%) was added to the YSZ powder through a mechanical mixing method. The densification , microstructure and electrical properties of the YSZ ceramics sintered at 1300 °C for 2 h, were investigated. It was found that the small addition of ZnO was effective in reducing the sintering temperature and promoting the densification rate of the ceramics. The 5.0 wt.% ZnO-doped YSZ has ∼ 96% relative density, as compared to ∼ 89% relative density for the undoped sample. The total conductivity of 8YSZ was evidently increased by doping small amount of ZnO. For the 0.5 wt.% doped sample, the total conductivity of 2.89 × 10^− 2 Ω^− 1 cm^− 1 and an increase of 120% in conductivity were observed at 800 °C, as compared to that of the undoped one. We also found that the grain boundary (GB) conductivity could be improved by small addition of ZnO. At intermediate temperature (∼ 300 °C), the maximum enhancement of GB conductivity was observed with 5.0 wt% ZnO dopant. Finally, the volume percentage of GB in the ceramics was estimated by the brick layer model. The possible mechanism related to the improved GB conduction of the YSZ due to the ZnO additions was discussed.     

Structural and electrical properties of VO2/ZnO nanostructures

We examined the structural and electrical properties of uniformly-oriented VO₂/ZnO nanostructures. VO₂ was deposited on ZnO templates by using a direct current-sputtering deposition. Scanning electron microscope and transmission electron microscope measurements indicated that b-oriented VO₂ were uniformly crystallized on ZnO templates with different lengths. VO₂/ZnO formed nanorods on ZnO nanorods with length longer than 250 nm. X-ray absorption fine structure at the V K edge of VO₂/ZnO showed M₁ and R phases of VO₂ at 30 and 100 °C, respectively, suggesting structural-phase transition occurring between the two temperatures. Temperature-dependent resistance measurements of VO₂/ZnO nanostructures revealed metal-to-insulator transition at 65 °C and 55 °C during a heating and a cooling, respectively, regardless of ZnO length. Asymmetry behavior of resistance curves from VO₂/ZnO nanostructure during a heating and a cooling was attributed from a strong bond of VO₂ and ZnO.     

Effect of Cd on the structural, magnetic and electrical properties of nanostructured Mn-Zn ferrite

Nanoparticles of Mn_0.5Zn_0.5−xCd_xFe₂O₄ (x=0.0, 0.1, 0.2 and 0.3) have been synthesized by a chemical co-precipitation method. The lattice constant increases with increasing Cd content. X-ray calculations indicate that there is deviation in the cation distribution in the nanostructured spinel ferrite. The dielectric constant and dielectric loss decrease for the samples with Cd content up to x=0.2. However the dielectric constant rises for x=0.3. This is due to an increase in the hopping process at the octahedral (B sites). The dielectric constant increases with increase in temperature, indicating a thermally activated hopping process. The DC resistivity increases with Cd content up to x=0.2 and decreases for Cd content x=0.3. The maximum magnetization of all the samples decreases with increase in Cd content.     

Effect of annealing on structural, optical and electrical properties of nanostructured Ge thin films

Ge thin films with a thickness of about 110 nm have been deposited by electron beam evaporation of 99.999% pure Ge powder and annealed in air at 100-500 °C for 2 h. Their optical, electrical and structural properties were studied as a function of annealing temperature. The films are amorphous below an annealing temperature of 400 °C as confirmed by XRD, FESEM and AFM. The films annealed at 400 and 450 °C exhibit X-ray diffraction pattern of Ge with cubic-F structure. The Raman spectrum of the as-deposited film exhibits peak at 298 cm⁻¹, which is left-shifted as compared to that for bulk Ge (i.e. 302 cm⁻¹), indicating nanostructure and quantum confinement in the as-deposited film. The Raman peak shifts further towards lower wavenumbers with annealing temperature. Optical band gap energy of amorphous Ge films changes from 1.1 eV with a substantial increase to ∼1.35 eV on crystallization at 400 and 450 °C and with an abrupt rise to 4.14 eV due to oxidation. The oxidation of Ge has been confirmed by FTIR analysis. The quantum confinement effects cause tailoring of optical band gap energy of Ge thin films making them better absorber of photons for their applications in photo-detectors and solar cells. XRD, FESEM and AFM suggest that the deposited Ge films are composed of nanoparticles in the range of 8-20 nm. The initial surface RMS roughness measured with AFM is 9.56 nm which rises to 12.25 nm with the increase of annealing temperature in the amorphous phase, but reduces to 6.57 nm due to orderedness of the atoms at the surface when crystallization takes place. Electrical resistivity measured as a function of annealing temperature is found to reduce from 460 to 240 Ω-cm in the amorphous phase but drops suddenly to 250 Ω-cm with crystallization at 450 °C. The film shows a steep rise in resistivity to about 22.7 KΩ-cm at 500 °C due to oxidation. RMS roughness and resistivity show almost opposite trends with annealing in the amorphous phase.     

Structural, electrical, electronic and optical properties of melanin films

We present thick, uniform and rather flat melanin films obtained using spray deposition. The morphology of the films was investigated using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). Temperature-dependent electrical resistance of melanin thin films evidenced a semiconductor-like character and a hysteretic behavior linked to an irreversible process of water molecule desorption from the melanin film. X-ray Photoelectron Spectroscopy (XPS) was carried out to analyze the role of the functional groups in the primary and secondary structure of the macromolecule, showing that the contribution of the 5,6-dihydroxyindole-2-carboxylic acid (DHICA) subunit to the molecule is about 35%. Comparison of the optical absorption of the thick (800nm) and thin (80nm) films showed a spectral change when the thickness increases. From in vacuum photoconductivity (PC) measured at controlled temperatures, we suggest that the melanin films exhibit a possible charge transport mechanism by means of delocalized states along the stacked planar secondary structure.     

Structural and electrical properties of tellurovanadate glasses containing Li2O

Glassy materials are promising intercalation compounds, due to their open network structure and absence of grain boundaries. Some glasses containing alkali ions and a high concentration of transition metal ions can present mixed ionic-electronic conductivity and are therefore potential candidates for application as cathode material in Li-ion batteries. The present work is devoted to the ternary system xLi₂O–(1 − x)[0.3V₂O₅–0.7TeO₂] with 0 ≤ x ≤ 0.4. These compounds were prepared by heat treatment in air at 800 °C followed by traditional quenching. Raman spectroscopy and ⁵¹V nuclear magnetic resonance measurements were performed in order to highlight the structural short range order modifications induced by the introduction of the Li₂O network modifier. These structural effects can be related to the electrical behaviour, as studied by complex impedance spectroscopy measurements.     

Structural and electrical properties of quasicrystalline Al-14 at% Mn alloy

Quasicrystalline Al-14 at. % Mn alloy was prepared by melt-spinning and its structural and electrical properties were studied. This alloy consists of icosahedral grains with sizes from 1 to 4 m and of crystalline aluminium phase. The electrical resistivity was almost temperature independent with a value of about 765 n gWm at 4·2 K.