共查询到20条相似文献,搜索用时 78 毫秒
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提出了一种简单而高效的新型软启动电路,实现了输出电压平稳、快速的上升.该电路有效抑制了DC-DC开关电源启动过程中出现的浪涌电流,同时避免了传统软启动电路在软启动结束时出现的输出电压过冲.电路完全集成在芯片内部,避免使用额外电容而占用过多面积和增加功耗.经过对电路的Hspice仿真以及芯片样品的测试,在输入电压为3.3V的升压型开关电源芯片中,输出电压在500 μs内分两步平稳上升,避免了浪涌电流和过冲电压,符合设计指标. 相似文献
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松下2188,长城画龙8363,8173,康佳06系列等彩电均采用厚膜STR-S6307(或S6309)为核心,配以性能完善的稳压、待命电路,过压、过流保护电路,组成了一种较新型的彩电开关电源电路,有较好的发展前景。现以松下C150机心为例进行分析,其开关电源电路部分见图1。这种电路热板部分厚膜STR-S6307只有①脚有300V的输入电压,其余各脚电位均接近0V,比较安全。输出主电源采用了极好的稳压措施,即使在行部分不工作负载过轻时,电压也不会上升,且小电源输出端的输出电压反而会略有下降。由于… 相似文献
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本文阐述单端正谐振磁通复位电流控制型开关电源电路的工作原理和性能特点。重点阐述其工作(磁通复位)原理和电路的动态特征。 相似文献
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A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply(SMPS) is presented.An enhanced mode VDMOS transistor,the gate of which is biased by a floating pisland, is used to provide start up current and sustain high voltage.An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS.Simulation results indicate that the high voltage start up circuit can start and restart as designe... 相似文献
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设计一种基于DSP和LabVIEW的高压真空断路器智能在线监测系统。传感器与下位机构成系统现场监测模块,安装于断路器本体。下位机硬件平台以TMS320F2812型DSP为核心实现断路器行程、分合闸电流和振动等信号的采集和处理,并通过CAN总线将数据传送至上位机(采用LabVIEW软件),从而实现数据的存储和显示。 相似文献
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This paper presents a novel driving circuit for the high-side switch of high voltage buck regulators.A 40 V P-channel lateral double-diffused metal–oxide–semiconductor device whose drain–source and drain–gate can resist high voltage, but whose source–gate must be less than 5 V, is used as the high-side switch. The proposed driving circuit provides a stable and accurate 5 V driving voltage for protecting the high-side switch from breakdown and achieving low on-resistance and simple loop stability design. Furthermore, the driving circuit with excellent driving capability decreases the switching loss and dead time is also developed to reduce the shoot-through current loss. Therefore, power efficiency is greatly improved. An asynchronous buck regulator with the proposed technique has been successfully fabricated by a 0.35 m CDMOS technology. From the results, compared with the accuracy of16.38% of the driving voltage in conventional design, a high accuracy of 1.38% is achieved in this work. Moreover,power efficiency is up to 95% at 12 V input and 5 V output. 相似文献
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A novel high-voltage device structure with a floating heavily doped N~+ ring embedded in the substrate is reported,which is called FR LDMOS.When the N~+ ring is introduced in the device substrate,the electric field peak of the main junction is reduced due to the transfer of the voltage from the main junction to the N~+ ring junction, and the vertical breakdown characteristic is improved significantly.Based on the Poisson equation of cylindrical coordinates,a breakdown voltage model is developed.The numerical results indicate that the breakdown voltage of the proposed device is increased by 56%in comparison to conventional LDMOS. 相似文献
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