Recombination measurements at low energies with Ar16+ and Ar18+ ions in a dense, cold electron target

Recombination of multiply charged ions with electrons at very low relative energies has become a major topic of interest, due to the observation of rates which are enhanced beyond the expectations for radiative recombination. We present results for Ar¹⁶⁺ and Ar¹⁸⁺ ions from systematic measurements along the argon isonuclear sequence using a high density cold electron beam target (n_e = 7 × 10⁹ cm^-3) at the UNILAC of GSI. The transverse and longitudinal temperatures of the electron beam were determined from DR resonance features observed with metastable Ar¹⁶⁺ (2³S) ions. The rate at E_rel = 0 for radiative recombination of completely stripped Ar¹⁸⁺ calculated with electron beam temperatures kT_∥ = 0.002 eV, kT_⊥ = 0.2 eV amounts to α = 10^-9 cm³ s^-1. This is exceeded by nearly a factor of 10 by the rate measured in experiments with Ar¹⁸⁺ ions. This revised version was published online in August 2006 with corrections to the Cover Date.     

Electron-impact ionization and dissociation of C<Subscript>2</Subscript>D<Superscript>+</Superscript>

Absolute cross sections for electron-impact single ionization, dissociative excitation and dissociative ionization of the ethynyl radical ion (C₂D⁺)^+) have been measured for electron energies ranging from the corresponding reaction thresholds to 2.5 keV. The animated crossed electron-ion beam experiment is used and results have been obtained for the production of C₂D²⁺, C²⁺, C₂⁺_2^+ , CD⁺, C⁺ and D⁺. The maximum of the cross section for single ionization is found to be (2.01 ± 0.02) × 10^-17 cm², at the incident electron energy of 105 eV. Absolute total cross sections for the various singly charged fragments production are observed to decrease by a factor of almost three, from the largest cross-section measured for C⁺, over C₂⁺_2^+ and CD⁺ down to that of D⁺. The maxima of the cross sections are obtained to be (14.5 ± 0.5) × 10^-17 cm² for C₂⁺_2^+, (12.1 ± 0.1) × 10^-17 cm² for CD⁺, (27.7 ± 0.2) × 10^-17 cm² for C⁺ and (11.1 ± 0.8) × 10^-17 cm² for D⁺. The smallest cross section is measured to be (1.50 ± 0.04) × 10^-18 cm² for the production of the doubly charged ion C²⁺. Individual contributions for dissociative excitation and dissociative ionization are determined for each singly-charged product. The cross sections are presented in closed analytic forms convenient for implementation in plasma simulation codes. Kinetic energy release distributions of dissociation fragments are seen to extend from 0 to 6 eV for the heaviest fragment C₂⁺_2^+, up to 11.0 eV for CD⁺, 14.2 eV for C⁺ and 11.2 eV for D⁺ products.     

纳米FeAl合金的磁共振谱分析

在与晶粒组元相当的包裹纳米FeAl晶粒的无序界面或/和表面组元中,存在Fe-Al-Fe电子的超交换作用或/和Fe-Fe交换作用,使多晶FeAl合金因晶粒纳米化出现非磁性—磁性转变.X波段(频率为9.48GHz)的电子自旋共振(ESR)实验表明多晶FeAl合金没有磁共振信号.纳米晶样品的铁磁共振(FMR)信号是一个线宽ΔH_pp为8×10⁴A/m以上的宽峰.还观测到纳米晶体样品中Fe²⁺离子的ESR精细结构双峰,两峰间隔为1.316×10关键词：     

129Xe contact shift in oxygen gas

We have determined the temperature dependence of σ₁ of ¹²⁹Xe in oxygen gas. These results were obtained by measurement of the resonance frequency of ¹²⁹Xe in gas samples of known densities in Xe and O₂. The shift of the resonance frequency due to Xe-Xe interactions has been measured in pure Xe gas samples with improved precision. This allows the determination of σ₁(Xe-O₂) by subtracting out the known effect of Xe-Xe interactions in mixed Xe-O₂ samples. σ₁(Xe-O₂) values are reported here for the temperature range 220 to 440 K. The values of σ₁(Xe-O₂) are adequately described by the polynomial function in p.p.m. amagat^-1 σ₁(Xe-O₂) = - 1·061 + 3·64 × 10^-3τ - 2·19 × 10^-5τ² + 9·58 × 10^-8τ³ - 2·08 × 10^-10τ⁴, where τ = (T - 300 K). It is found that the temperature dependence of σ₁(Xe-O₂) can be interpreted in terms of a contact interaction between Xe and the paramagnetic O₂ molecule.     

A new approach to the problem of electron-atom collision cross section measurements in the low-energy range

Momentum-transfer cross sections for He and Ar have been determined in the energy ranges 5×10^-3?3 eV and 5×10^-3?0.6 eV, respectively using a modified effective-range analysis of the shape of experimental ECR-absorption lines, registered in the afterglows. The following values have been obtained for the scattering length: 1.17±0.01a³₀ for He and 1.53±0.01a³₀ for Ar.     

Shubnikov-de haas effect in n-CdSnAs2

Shubnikov-de Haas oscillations in the transverse magnetoresistance of single-crystalline n-type CdSnAs₂ have been recorded at temperatures between 2 and 25 K in magnetic fields up to 5T. The electron concentration of the samples ranged from 2 × 10¹⁷ to 2 × 10¹⁸ cm^?3. The angular dependences of the oscillation periods and cyclotron effective masses showed that the conduction band exhibits an energy dependent anisotropy, obeying the Kildal band structure model. For the low-temperature values of the band parameters we found: a band gap E_g = 0.30 eV, a spin-orbit splitting Δ = 0.50 eV, a crystal field splitting parameter δ = ?0.09 eV, and an interband matrix element P = 8.5 × 10^?8eV cm. This simple four-level model was found to be not adequate to describe quantitatively the observed electronic effective g-factor for a sample with low electron concentration.     

On the bound states in the muonic molecular ions

Absolute cross sections for electron impact ionization and dissociation of OH⁺ and OD⁺ leading to the formation of the OH²⁺, O⁺, O²⁺, O³⁺ and D⁺ ions have been measured by applying the animated electron-ion beam method in the energy range from the respective reaction thresholds up to 2.5 keV. The maximum of the single ionization cross section is found to be (0.95? ± ?0.02) × 10^?19 cm² at 155 eV. The maximum total cross sections for O⁺ and D⁺ fragments production are observed to be (15.7? ± ?0.2) × 10^?17 cm² at 95 eV and (10.8? ± ?0.5) × 10^?17 cm² at 95 eV, respectively. The cross sections for O²⁺ and O³⁺ are much smaller, (5.37? ± ?0.04) × 10^-18 cm² at 135 eV and (7.95? ± ? 0.23) × 10^-20 cm² at 315 eV, respectively. The collected data are analyzed in details in order to determine separately the contributions of dissociative excitation and of dissociative ionization to the O⁺ and D⁺ fragments production.     

Radiation defects in Si of high purity

Abstract

Radiation defects created by γ-irradiation of Co⁶⁰ and fast neutrons in high purity p-Si (p = 5×10³ to 4 × 10⁴ Ω.cm) and n-Si (p = 4 × 10² to 5 × 10³ Ω.cm) are investigated by measurements of Hall effect, resistivity and minority carrier lifetime. The oxygen concentration in the crystals is in the range of 5 × 10¹⁴ to 5 × 10¹⁵ cm^?3.

It is shown that stable γ-defects at 300 °K are divacancies and complexes of vacancies with donor or acceptor impurities. Divacancies introduced by γ-irradiation are the secondary defects. They become predominant after ‘exhaustion’ of the dopant. When divacancies become the predominant defects the Fermi level occupies its boundary position E_v +0.39 eV in the gap. At low doses (Φ<10¹⁶ photons/cm²) vacancy-impurity complexes and at heavy doses (Φ>10¹⁷ photons/cm²) divacancies play the main role in the recombination process.

In neutron irradiation disordered regions are introduced and the level at E_v +0.35 eV is observed. The Fermi level in both n- and p-Si shifts to the middle of the gap. At the annealing of disordered regions in the interval 200 to 250 °C the level at E_v +0.27 eV appears and Fermi level occupies its boundary position at E_v +0.39 eV. This indicates that divacancies become the predominant defects which can be formed as secondary defects at the destruction of the disordered regions.     

Resonance absorption and fluorescence in argon

Absorption cross sections of argon for argon resonance radiation have been measured by several techniques. The apparent cross sections are small (0·1 to 1·6 × 10^-18 cm²) for resonance absorption and the values depend on the technique used for measurement. These observations are interpreted in terms of extensive reversal and broadening in the source. The excitation and quenching of resonance fluorescence was studied to provide information about the rates of the processes

The rate constants were estimated relative to k _r, the rate constant for radiation. Radiation imprisonment leads to a reduction of k _r from its natural value and observations of the decay of resonance fluorescence suggest that k _r ～ 1·5 × 10⁵ s^-1 in our system at [Ar] = 2 × 10¹⁷ atom cm^-3. Combining this value with the relative values for the quenching rate constants gives k ₁ < 1·5 × 10^-13, k ₁′(M = N₂) ～ 6 × 10^-12, k ₁′(M = NO) ～ 4 × 10^-10, in units of cm³ s^-1 molecule^-1.     

Anomalous temperature dependence of the band gap in AgGaSe2 and AgInSe2

The lowest band gaps of AgGaSe₂ and AgInSe₂ single crystals in the temperature range from 90 to 300 K were determined from photoconductivity measurements. Below (above ≈ 120 K in AgInSe₂ and ≈ 125 K in AgGaSe₂ the temperature coefficient of the band gap is +5 × 10⁻⁴ eV/K (−1.5 × 10⁻⁴ eV/K) and +1.1 × 10⁻⁴ eV/K (−4.28 × 10⁻⁴ eV/K), respectively. The positive value is explained with the lattice dilation effect being the dominant mechanism for the band gap variation at the temperatures less than ≈ 120–125 K.     

Absolute cross sections and kinetic energy release distributions for electron-impact ionization and dissociation of CD<Superscript>+</Superscript><Subscript>4</Subscript>

Absolute cross sections for electron-impact dissociative excitation and ionization of CD⁺ ₄ leading to formation of ionic products (CD²⁺ ₄, CD⁺ ₃, CD⁺ ₂, CD⁺, C⁺, D⁺ ₃, D⁺ ₂, and D⁺) have been measured. The animated crossed-beams method is applied in the energy range from the reaction threshold up to 2.5 keV. Around 100 eV, the maximum cross sections are found to be (3.8±0.2) ×10^-19 cm²,  cm², (7.1±0.8) ×10^-17 cm², (9.0±0.8) × 10^-17 cm² and (3.7±0.4) ×10^-17 cm² for the heavy carbonaceous ions CD²⁺ ₄, CD⁺ ₃, CD⁺ ₂, CD⁺ and C⁺ respectively. For the light fragments, D⁺ ₃, D⁺ ₂, and D⁺, the cross sections around the maximum are found to be (5.0±0.6) ×10^-19 cm², (1.7± 0.2) ×10^-17 cm² and (10.6±1.0) ×10^-17 cm², respectively. The cross sections are presented in closed analytic forms convenient for implementation in plasma simulation codes. The analysis of ionic product velocity distributions allows determination of the kinetic energy release distributions which are seen to extend from 0 to 9 eV for heavy fragments, and up to 14 eV for light ones. The comparison of present energy thresholds and kinetic energy release with available published data gives information about states contributing to the observed processes. Individual contributions for dissociative excitation and dissociative ionization are determined for each detected product. A complete database including cross sections and energies is compiled for use in fusion application.     

Piezoelectric and elastic properties of the nonlinear optical material bismuth triborate, BiB3O6

Piezoelectric, pyroelectric, dielectric, elastic and thermoelastic properties of BiB₃O₆, point group symmetry 2, are reported. The eight independent components of the piezoelectric tensor could be derived from first-order longitudinal and transverse electrostrictive effects, employing a Michelson interferometer. For the determination of the elasticity tensor ultrasonic resonances of plane-parallel plates of different orientations and, in addition, the resonant ultrasound spectra (RUS) of rectangular parallelepipeda were measured. For the evaluation of the elasticity tensor from these resonant frequencies the piezoelectric coupling had to be taken into account. BiB₃O₆ exhibits a maximum longitudinal piezoelectric effect of 39.5×10^-12 mV^-1 along the twofold axis, a value about 17 timeslarger than that of α-quartz. The longitudinal elastic stiffness attains a minimum of about 5×10¹⁰ N m^-2 along the same direction and a maximum perpendicular to the twofold axis of about 33×10¹⁰ N m^-2, one of the largest elastic anisotropies observed in ionic crystals. This behaviour corresponds to the earlier observed extreme anisotropy of thermal expansion. The phenomena can be qualitatively interpreted by structural details, especially the preferential orientation of the lone electron pair of Bi³⁺. PACS 62.20.Dc; 77.65.Bn; 77.70.+a     

半磁半导体Cd1-xMnxTe光吸收边的压力效应

本文研究了室温下1—40kbar流体静压力范围内三元化合物半磁半导体Cd_1-xMn_xTe光吸收边的压力效应。实验结果给出:x<0.5的样品,吸收边随压力增加向高能方向以α=6—8×10^-3eV/kbar的速率漂移,并具有10^-5/kbar²量级的二级非线性系数;x≥0.5的样品,表观吸收边随压力增加向低能方向漂移,压力系数为α-5×10^-3eV/kbar。高压下所研究的样品均有一从闪锌矿结构到NaCl结构的相变发生。这一相变可以是不可逆的,相变压力与样品组分有关,大致在25—40kbar范围内。根据半导体能带畸变势效应和晶体场理论模型估计了压力系数的理论值,讨论了不同压力系数的物理原因。 关键词：     

Photoluminescence studies of ZnO thin films on R-plane sapphire substrates grown by sol–gel method

Zinc oxide (ZnO) thin films on R-plane sapphire substrates were grown by the sol–gel spin-coating method. The optical properties of the ZnO thin films were investigated using photoluminescence. In the UV range, the asymmetric near-band-edge emission was observed at 300 K, which consisted of two emissions at 3.338 and 3.279 eV. Eight peaks at 3.418, 3.402, 3.360, 3.288, 3.216, 3.145, 3.074, and 3.004 eV, which respectively correspond to the free exciton (FX), bound exciton, transverse optical (TO) phonon replica of FX recombination, and first-order longitudinal optical phonon replica of FX and the TO (1LO+TO), 2LO+TO, 3LO+TO, 4LO+TO, and 5LO+TO, were obtained at 12 K. From the temperature-dependent PL, it was found that the emission peaks at 3.338 and 3.279 eV corresponded to the FX and TO, respectively. The activation energy of the FX and TO emission peaks was found to be about 39.3 and 28.9 meV, respectively. The values of the fitting parameters of Varshni's empirical equation were α=4×10^?3 eV/K and β=4.9×10³ K, and the S factor of the ZnO thin films was 0.658. With increasing temperature, the exciton radiative lifetime of the FX and TO emissions increased. The temperature-dependent variation of the exciton radiative lifetime for the TO emission was slightly higher than that for the FX emission.     

Pressure dependence of the absorption edge for Cd1-xMnxTe

The effect of pressure on the optical absorption edge of mixed crystals Cd_1-xMn_xTe with different manganese concentrations is reported. The observed absorption edge shifts to higher energy with increasing pressure at a rate of α=7?8×10^?3 eV/kbar and a second order coefficient of β=-4×10^?5 eV/kbar² for x<0.5, to lower energy with increasing pressure at a rate of α=-5.0 ×10^?3 eV/kbar for x?0.5. A phase transition occurs for all the samples studied. The absorption edge of the new phase is outside the wavenumber range of the instrument. The physical origins of different pressure coefficients are discussed in the light of the deformation potentials of energy band states and the hybridization of the Mn²⁺ 3d levels with the p-like states in the valence band.     

硅的低温电学性质

本文在20°—300°K研究了室温载流子浓度2×10¹²—1×10²⁰cm^-3含硼或磷(砷)Si的电学性质。对一些p-Si样品用弱场横向磁阻法及杂质激活能法进行了补偿度的测定,并进行了比较。从霍尔系数与温度关系的分析指出,对于较纯样品,硼受主能级的电离能为0.045eV,磷施主能级为0.045eV,在载流子浓度为10¹⁸—10¹⁹cm^-3时发现了费米简并,对载流子浓度为2×10¹⁷—1×10¹⁸cm^-3的p-Si及5×10¹⁷—4×10¹⁸cm^-3的n-Si观察到了杂质电导行为。从霍尔系数与电导率计算了非本征的霍尔迁移率。在100°—300°K间,晶格散射迁移率μ满足关系式AT^-a,其中A=2.1×10⁹,α=2.7(对空穴);或A=1.2×10⁸,α=2.0(对电子)。另外,根据我们的材料(载流子浓度在5×10¹¹—5×10²⁰cm^-3间),分别建立了一条电阻率与载流子浓度及电阻率与迁移率的关系曲线,以提供制备材料时参考之用。     

Elastic constants of LaB6 at room temperature

Measurements have been made of the transit times of pulses of longitudinal and transverse ultrasonic waves propagating in single crystal LaB₆ at room temperature. A unique set of values for the three independent elastic constants has been calculated from the resultant velocities and is; C₁₁ = (45.33 ± 0.11) × 10¹¹dynecm^-2, $\text{C}{}_{12}\text{= (1.82 ± 0.17) × 10}{}^{11}\text{dyne}\text{cm}{}^2$ and C₄₄ = (9.01 ± 0.05) × 10¹¹dyne/cm². The Debye temperature of LaB₆ from these measurements is 773 K, which agrees relatively well with the X-ray Debye temperature, however, differs much from the calorimetric and electrical resistance Debye temperatures.     

Hydrogen peroxide yield in gamma‐irradiated air-saturated ice at 77 °K

The concentration of hydrogen peroxide formed in thawed γ-irradiated air-saturated ice has been studied as a function of dose over the range: 3.8 × 10¹⁷ eV/ml-5.6 × 10¹⁹ eV/ml. The concentration dose data do not fit a linear plot. Three empirical equations have been tried to fit the experimental data. Of these equations, the one of the form C = [(1+αD) - 1]/β is found to fit the data very closely, and also predicts log C to vary linearly with log D at high doses as found experimentally. By extrapolation of this equation to zero dose G _H2O2 is evaluated to be 0.32.     

EPR, Optical Absorption and Superposition Model Study of Fe3+-Doped Ammonium Dihydrogen Phosphate Single Crystals

X-band electron paramagnetic resonance (EPR) studies are carried out on Fe³⁺ ions doped in ammonium dihydrogen phosphate (ADP) single crystals at room temperature. The crystal field and spin Hamiltonian parameters are evaluated from the resonance lines obtained at different angular rotations. The obtained values of spin Hamiltonian and zero-field parameters of the Fe³⁺ ion in ADP are: g = 1.994 ± 0.002, |D| = (220 ± 5) × 10^?4 cm^?1 and a = (640 ± 5) × 10^?4 cm^?1. On the basis of EPR data, the site symmetry of the Fe³⁺ ion in the crystal is discussed. The Fe³⁺ ion enters the lattice substitutionally replacing the NH₄ ⁺ sites. The optical absorption of the crystal is also studied at room temperature in the wavelength range of 195–925 nm. The energy values of different orbital levels are calculated. The observed bands are assigned as transitions from the ⁶ A _1g (S) ground state to various excited quartet levels of the Fe³⁺ ion in a cubic crystalline field. From the observed band positions, Racah interelectronic repulsion parameters (B and C), cubic crystal field splitting parameter (D _q ) and Trees correction are calculated. There values are: B = 970, C = 1,923, D _q  = 1,380 cm^?1 and α = 90 cm^?1, respectively. On the basis of EPR and optical data, the nature of bonding in the crystal is discussed. The zero-field splitting (ZFS) parameters are also determined theoretically using B _kq parameters estimated from the superposition model. The values of ZFS parameters thus obtained are |D| = (213 ± 5) × 10^?4 cm^?1 and |E| = (21 ± 5) × 10^?4 cm^?1.     

Li1+xGe2-xAlxP3O12系统的相关系和电导

本文研究了Li_1+xGe_2-xAl_xP₃O₁₂系统的相组成和电导的关系。发现用LiGe₂P₃O₁₂作为基体化合物,通过离子置换可以得到好的锂离子导体。用Al³⁺置换LiGe₂P₃O₁₂中的Ge⁴⁺,在0关键词：