BaMgF4晶体电子结构及光学性质的第一性原理研究

运用CASTEP软件计算了完整的BaMgF4晶体的电子结构、介电函数和吸收光谱.采用剪刀算子进行修正,根据实验结果和计算结果比对,确定剪刀算子值为4.77 eV.计算结果显示完整的BaMgF4晶体在14.203～14.475 eV和21.480～21.767 eV两个区间有很明显的吸收峰,吸收边为10.337 eV,对应BaMgF4晶体的本征吸收边125 nm,计算结果与实验结果基本一致.     

Na、Lu掺杂Mg2Si的电子结构及光学性质的第一性原理计算

采用基于密度泛函理论的第一性原理赝势平面波方法,研究了未掺杂Mg2Si以及Na、Lu掺杂Mg2Si的电子结构和光学性质.计算结果表明:Na掺杂Mg2Si后,费米能级进入价带,呈p型导电;Lu掺杂Mg2Si后,费米能级进入导带,呈n型导电.未掺杂Mg2Si对于能量低于0.5eV的光子几乎不吸收,但Na、Lu掺杂的Mg2Si对于能量低于0.5eV的光子还存在较大的吸收,即Na、Lu掺杂改善了Mg2Si对红外光子的吸收.掺杂后,可见光区的吸收系数与反射率明显减小,这说明掺杂的Mg2Si在可见光区的透过率增大.计算结果为Mg2Si 基光电器件的设计与应用提供了理论依据.     

Ce、N共掺杂锐钛矿相TiO2光学性能的第一性原理研究

采用密度泛函理论研究了Ce、N共掺杂锐钛矿相TiO2的电子结构、态密度和光学特性.计算结果表明,不同位置Ce、N共掺杂对TiO2的杂质形成能、带隙和光学性质是有影响的.共掺杂带隙比单掺杂TiO2的更窄,导致电子从杂质能级激发到导带的概率增大,这会提高共掺杂TiO2的光量子效率.Ce、N共掺杂后TiO2吸收带边红移至可见光区的更远处,光学吸收系数比单掺杂时更强,这主要是由Ce、N共掺杂的协同效应引起的.带边位置的计算结果表明掺杂TiO2的强氧化还原能力得到保持.因此,Ce、N共掺后TiO2在可见光区具有良好的光催化性能.     

Ag,N共掺锐钛矿TiO2电子结构和光学性质的第一性原理研究

基于密度泛函理论(DFT)的第一性原理研究了未掺杂,Ag、N单掺杂及Ag-N共掺杂锐钛矿TiO2的晶体结构,电子结构及光学特性.研究结果表明,掺杂后锐钛矿TiO2晶胞膨胀,晶格发生明显畸变;Ag-N共掺杂TiO2禁带中引入新的杂质能级,导带下移,禁带宽度减小到1.34 eV,TiO2的光吸收带边发生明显红移,在紫外区和可见光区的吸收系数增大,提高了TiO2的光催化效率.     

不同价态稀土元素Eu掺杂锐钛矿相TiO2的电子结构及光学性质

基于密度泛函理论(DFT)的第一性原理的平面波超软赝势法对锐钛矿TiO2晶体和Eu3+,Eu2分别掺杂的锐钛矿TiO2晶体的晶格参数、能带结构、态密度、差分电荷密度以及吸收光谱进行了计算.结果表明:不同价态Eu掺杂后锐钛矿TiO2晶胞膨胀,晶格都发生畸变;同时引入了杂质能级,减小了锐钛矿相TiO2的禁带宽度,TiO2的光吸收带边发生明显红移,在紫外区和可见光区的吸收系数增大.     

金属及非金属元素掺杂(TiO2)12量子环的电子性质的密度泛函理论研究

采用基于密度泛函理论(DFT)中广义梯度近似(GGA)的PBE交换关联能函数,研究了新型(TiO2) 12量子团簇环结构.在此结构的基础上,分别采用过渡金属元素Cr、Mo、V、Nb与氧族元素S、Se、Te对其进行掺杂,计算并分析了掺杂前后量子环的几何结构、平均结合能、能级结构及电子云密度分布等属性.计算结果表明:除了Te的掺杂结果有轻微变形外,其它的掺杂结果结构都保持得较好,其中采用V和Nb掺杂的结构最为稳定,平均结合能最高.且所有掺杂结果能隙均有所减小,其中Te的掺杂结果能隙最小,仅为1.12 eV.除此之外,Cr和Mo的掺杂结果能隙也很小,均约为1.2 eV,且结构较为稳定.     

可见光响应型Fe掺杂SiO2/TiO2光催化材料的制备及降解水中腐殖酸的研究

采用溶胶凝胶法制备了可见光响应型Fe掺杂SiO2/TiO2光催化材料,并采用TG-DTA、XRD、UV-vis、TEM及XPS等手段对其进行了表征.以水中腐殖酸的降解为探针反应,考察了可见光照射下Fe-SiO2/TiO2的光催化活性.XRD结果表明,Fe离子掺杂可抑制催化剂晶粒尺寸,600℃焙烧后的Fe-SiO2/TiO2为锐钛矿相结构.Ur-vis吸收光谱分析可看出Fe离子掺杂提高了催化剂对可见光的吸收能力,并使催化剂的吸收带边产生了红移.XPS光谱表明,催化剂表面存在着Fe2+和Fe3+.实验结果表明,Fe-SiO2/TiO2在可见光下对腐殖酸的光催化降解率优于SiO2/TiO2和TiO2.Fe-SiO2/TiO2具有较高光催化活性的主要原因为:Fe离子掺杂不仅使SiO2/TiO2催化剂的粒径减小和对可见光的吸收增强,而且在催化剂表面产生了有利于光生e--h+对分离的Fe3+/Fe2+氧化还原循环电对.     

Na掺杂对TiO2基材料电子结构、电子迁移特性及光吸收性质的影响

在赝势法密度泛函理论的基础上,系统研究了Na掺杂对TiO2基材料电子结构、载流子迁移和光吸收性质的影响.纯的TiO2基晶态材料呈现宽的直接带隙,其带隙宽度达2.438 eV,Na掺杂降低了TiO2基晶态材料的带隙至1.976 eV.纯的TiO2电子主要形成五个能带,而Na掺杂TiO2主要形成七个能带.TiO2材料的载流子迁移率较Na掺杂TiO2材料高,而Na掺杂TiO2材料载流子有效质量较TiO2的高.Na掺杂在TiO2材料价带中引入空穴和新的能级.Na掺杂大大提高了TiO2材料的载流子浓度,Ti中的p态电子,Na中的p态电子和O中的p态电子在导电过程中起着关键作用.Na掺杂TiO2材料的低能量光吸收限降低.     

第一性原理研究InFeO3和In2FeCrO6的电子结构和光吸收性质

采用基于第一性原理的密度泛函理论和Hubbard修正方法(DFT+U)计算了多铁材料InFeO3和In2FeCrO6的电子结构和光吸收性质.计算结果表明,Cr掺杂InFeO3的形成能比BiFeO3要低,相对容易完成掺杂,In2FeCrO6带隙宽度相对本征InFeO3没有明显的变化,但能带的色散变小,促进了可见光吸收.通过态密度分析可知,In2FeCrO6中CBM的Fe-3d能级比InFeO3的CBM的Fe-3d能级占据数变小,局域化程度降低,能带变得比较平缓.在InFeO3和In2FeCrO6体系中,Fe和Cr的化合价约为1.7+,Fe-O和Cr-O之间的库伦作用和成键程度差异性不大,导致两者的带隙变化不明显.光吸收谱分析表明,在入射光能量2.1～2.75eV范围内,Cr的掺入改善了InFeO3的可见光的吸收性能.     

稀土元素(Ce/Nd/Eu/Gd)与N共掺金红石相TiO2的第一性原理研究

基于密度泛函理论的第一性原理平面波超软赝势计算方法,计算分析了纯金红石相TiO2,Ce、Nd、Eu和Gd四种稀土元素单掺杂金红石相TiO2,以及与N共掺金红石相TiO2的晶体结构、电子结构和光学性质.由掺杂前后的结果分析发现,掺杂后晶胞膨胀,晶格发生畸变;费米能级上移进入导带,导带底部引入杂质能级,提高了掺杂体系的电导率和对可见光的响应;光学性质、介电函数和吸收谱掺杂体系峰值比纯TiO2小,反射谱和能量损耗谱出现红移现象.     

含氧空位SrTiO3晶体电子结构研究

运用CRYSTAL-09软件计算得到了完整和含氧空位的SrTiO3晶体的电子态密度分布、能带结构和电荷密度分布。本文先通过分析完整SrTiO3晶体的电子结构,确定晶体化学键的组成。通过分析含氧空位的SrTiO3晶体的电子结构,发现禁带中出现一条新的缺陷带,缺陷带属于Σ轨道。通过缺陷能级的分析,结果表明SrTiO3晶体中2.4 eV的发光带可能是由Σ*-Σ之间的跃迁产生。     

第一性原理研究氧化锌晶体的电子结构和光学性质

为了研究氧化锌晶体的光学性质,本文采用密度泛函理论(DFT)的广义梯度近似(GGA)下的平面波赝势法计算了氧化锌晶体的电子结构、复数折射率、介电函数、光电导谱和吸收光谱.介电函数的虚部、吸收光谱、折射率等它们的峰值位置存在一一对应关系,这表明了它们之间存在着内在的联系,它们都与电子从价带到导带的跃迁吸收有关,这为从物理本质上理解氧化锌晶体的光学性质提供了重要的依据.计算结果与实验结果吻合得很好.     

Thermally activated de-excitation of the EL2 metastable state in GaAs

Measurements of absorption in the near infrared have been performed on n-type and undoped semi-insulating GaAs containing EL2 the main native defect in GaAs. The whole band of absorption related to EL2 disappeared after 1 μm light illumination when the crystal was cooled to helium temperatures. Measurements of the thermally activated recovery of EL2 absorption have been made. The rate of the de-excitation is well described by the formula: r = 1.7 · 10¹² · exp (−0.36 eV/kT) + 1.6 · 10⁻⁹ · n · exp (−0.085 eV/kT) s⁻¹ where n [cm⁻³] is the concentration of free electrons.     

Annealing temperatures induced optical constant variations of methyl violet 2B thin films manufactured by the spin coating technique

Spin coating technique has been successfully applied to deposit uniform methyl violet 2B (MV2B) thin films. X-ray diffraction and Fourier-transform infrared techniques were used to study the crystal and molecular structure of MV2B. The optical properties of the films have been studied by spectrophotometer measurements of transmittance and reflectance at normal incidence of light in the spectral range of 200–2500 nm. The absorption and refractive indices are independent of the film thickness. The absorption parameters such as molar extinction coefficient, oscillator strength and electric dipole strength have been reported before and after annealing. The type of electronic transition is indirect allowed transition with onset energy gap of 1.82 eV and optical energy gap of 3.65 eV. Annealing temperatures reduce structure disorder, remove trap level, increase values of the onset and optical energy gaps and decrease refractive index. The single oscillator model has been applied for calculating the dispersion parameters. The oscillator energy, the dispersion energy, the high frequency dielectric constant, the lattice dielectric constant and the ratio of free charge carriers' concentration to its effective mass were evaluated before and after annealing. The dielectric properties of the films were also determined.     

A study of absorption coefficient spectra in a-Si:H films near the transition from amorphous to crystalline phase measured by resonant photothermal bending spectroscopy

Optical absorption spectra of a widegap hydrogenated amorphous silicon film have been estimated by resonant photothermal bending spectroscopy. It is found that excess absorption exists over the photon energy region of 1.2–1.6 eV. This excess absorption decreases by light illumination and does not recover through thermal annealing. The decrease in the excess absorption may be due to oxidization of the film by light illumination.     

Synthesis and characterization of visible light responsive N-TiO2 mixed crystal by a modified hydrothermal process

N doped TiO₂ with anatase and rutile mixed crystal were prepared by using tetrabutyl titanate as the precursor via a modified hydrothermal process and calcination at 320 °C. The microstructure and morphology of samples were characterized by XRD, UV-vis-DRS, FTIR and XPS. The results showed that N-TiO₂ particles were crystallized to anatase and rutile mixed crystal structure; they were presented narrow particle size distribution, and the average particle size was ca. 13.5 nm calculated from XRD results. It was found that the N-doped TiO₂ particles showed strong visible-light absorption and high photocatalytic activity for the mineralization of Rhodamine B under irradiation by visible light (400-500 nm). The high visible-light photocatalytic activity of the obtained N-doped TiO₂ might result from the synergetic effect of nitrogen doping and the mixed lattice structure of N-TiO₂. Possible mechanism of N-TiO₂ mixed crystal formed under hydrothermal conditions was discussed.     

Polycrystalline Lead Tin Chalcogenide Thin Film Grown by Spray Pyrolysis

PbSnS₂ thin film has been prepared for the first time by spray pyrolysis technique on FTO substrate at 570K. The preliminary optical and structural characteristics of the film have been reported. The optical studies showed that the value of the fundamental absorption edge lies at 1.47eV and a low energy absorption band tail has been observed. The prepared film is p‐ type electrical conductivity, polycrystalline in nature and has an orthorhombic crystal structure. The value of an average grain size of the film is 350Å.     

Vacuum ultraviolet absorption spectrum of photorefractive Sn-doped silica fiber preforms

Vacuum ultraviolet (VUV) absorption data have been obtained up to 8.3 eV on Sn-doped silica fibre preforms. Measurements have been carried out before and after exposure to 248 nm radiation from KrF excimer laser. The absorption spectrum is composed of three structures peaking at about 4.9, 5.8 and 7 eV, with the absorption edge at about 8.2 eV. The main effect of 5 eV irradiation is the decrease of the spectral components at 4.9 and 7 eV, whereas a small increase of absorption intensity is only observed just below the band at 4.9 eV. According to the observed negative absorption changes in the whole region of point-defect bands one would expect a negative refractive index change, contrary to the positive change previously reported in optical fibres of the same composition. Structural modifications accompanying the defect photoconversion process are suggested to be responsible for positive refractive index changes.     

Optical characterization of thermally evaporated thin CdO films

Cadmium Oxide films have been prepared by vacuum evaporation method on a glass substrate at room temperature. Detailed structural, optical, and electrical properties of the films are presented at different annealing temperatures. The crystal structure of the samples was studied by X‐ ray diffraction. The spectral absorption coefficient of the CdO film at the fundamental absorption region (450‐650nm) was determined using the spectral data of transmittance. The direct and indirect band gap energies were determined and found to be 2.33 eV and 1.95 eV respectively. The third order optical nonlinearities χ(3) of CdO films has been measured used the z‐can technique. The real and imaginary parts of χ(3) have been measured at 514 nm and found to be 1.7x10^‐3 esu and 3.0x10^‐3 esu, respectively. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical and dielectric studies on succinic acid single crystals

Single crystals of ferroelectric succinic acid (SA) with very high degree of transparency were grown from aqueous solution by slow evaporation technique. Single crystal X‐ray diffraction analysis reveals that the crystal belongs to monoclinic system with the space group P2₁/c. Some physical parameters have been determined for grown crystal. The optical absorption study reveals the transparency of the crystal in the entire visible region and the cut off wave length was found to be 240 nm. The optical band gap is found to be 3.75 eV. The dependence of extinction coefficient (k) and refractive index (n) on the wavelength have also been reported. The presence of functional groups was determined qualitatively by using Fourier transform infrared spectrum (FTIR) from which force constant has been calculated. The dielectric constant was also studied as a function of frequency at room temperature and electrical conductivity has been calculated from the Cole‐Cole plot. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)