Narrow bandgap mid-infrared photodetectors based on InAsSbP quantum dots

The results of investigations of mid-infrared photodetectors based on InAsSbP quantum dot (QD) grown on InAs(100) substrate by modified liquid phase epitaxy are presented. The atomic force microscope measurements have shown that the surface density of grown QDs is (4–8) × 10⁹ cm^?2. Also, the morphology and crystalline quality of grown QDs are investigated by a scanning tunneling microscope. Photodetectors based on n-InAs(100) substrate with InAsSbP QDs on its surface were fabricated in the form of a photoconductor cell. The photoresponse spectrum extended up to 4 μm was observed. The optical properties of fabricated structures were investigated under He–Ne laser irradiation with wavelength of 1.15 μm. It was found that the relative surface conductance increases by 16% at power density of 0.15 W/cm². Capacitance hysteresis with maximal remnant capacitance of 2.17 nF at 10³ Hz was observed as well.     

Polarized photodetectors based on two-dimensional semiconductors

Since the successful preparation of graphene in 2004[1],two-dimensional materials have been rapidly developed[2-4].In recent years,high-performance photodetectors based on two-dimensional(2D)semiconductors have emerged and covered a broad spectral band ranging from ultraviolet to infrared light[5-7].Among them,the polarization-sensitive photodetectors based on anisotropic semiconductors introduce the polarization state into photodetection,which effectively increases the dimension of detection and obtain more comprehensive and accurate information of the detected objects.     

Mid-infrared optical resonances in quantum dot photodetectors coupled with metallic gratings with different aperture diameters

The paper is devoted to optical testing of mid-infrared Ge/Si photodetectors obtained by stacking of self-assembled Ge quantum dots in multilayer structures, which are near-field coupled to the adjacent nanoplasmonic arrays of subwavelength holes in metallic films. It is shown that photocurrent and near-field spectra consist of several sets of peaks, which are attributted to surface plasmon waves, localized surface plasmon modes or diffractive Rayleigh anomaly depending on the hole diameter and the angle of incidence θ. We find that for small holes the greatest contribution to the photocurrent enhancement is due to the excitation of the surface plasmon-polariton waves for all θ. As the hole diameter is increased and becomes comparable with the array periodicity, the normal-incident photoresponse improvement is provided by the Rayleigh anomaly. With the increase of incident angle, the photocurrent enhancement is supposed to arise from coupling of the localized shape resonance and propagating plasmon modes.     

黑砷磷室温太赫兹探测器

由于太赫兹波与众多物质之间存在着丰富的相互作用,太赫兹技术在众多领域均有应用需求。因此,基于独特物理机制和优异材料特性的高灵敏度、便携式太赫兹探测器的研制刻不容缓。黑砷磷是一种新型二维材料,其带隙和输运特性随化学组分可调,在光电探测领域被广泛关注。目前基于黑砷磷的研究集中在红外探测方面,而对于太赫兹探测的应用未见报道。本文介绍了一种基于黑砷磷的天线耦合太赫兹探测器。实验结果表明,在探测过程中存在两种不同的探测机制,并且两者之间存在竞争关系。通过改变黑砷磷的化学组分可以定制不同的探测机制,使其达到最优响应性能。在平衡材料带隙和载流子迁移率的情况下,探测器实现了室温下对0.37 THz电磁波的灵敏探测,其电压响应度和噪声等效功率分别为28.23 V/W和0.53 nW/Hz1/2。     

Schottky barrier UV photodetectors based on zinc selenide

The results of investigations of the properties of UV photodetectors based on zinc selenide are presented. The influence of the parameters of the diode structure, the temperature, and the voltage on the main characteristics and parameters of the photodetectors is considered. Zh. Tekh. Fiz. 68, 123–125 (September 1998)     

基于苯并二噻吩聚合物所制备的三元光电探测器的特性

本文采用P3HT:PTB7:PC61BM为活性层,制备了覆盖可见光范围的三元体异质结有机光电探测器(organic photodetectors,OPDs).利用原子力显微镜、紫外可见吸收光谱和荧光光谱等手段研究了PTB7添加到P3HT:PC61BM体系中对OPDs光学和电学性质的影响,发现当P3HT:PTB7:PC6...     

Mid-infrared laser with 1.2 W output power based on PPLT

The optical parametric oscillator (OPO) based on the periodically poled lithium tantalate (PPLT) crystal (40 mm×5 mm×1 mm) is fabricated. The OPO is pumped by a Q-switched Nd:YAG laser working at 1.064 μm. An average idler output power (around 3.8 μm) of 1.2 W and signal output power (around 1.48 μm) of 3 W are obtained when the pump power is 20 W.     

Single-photon emitters based on semiconductor nanostructures

Single-photon emitters based on semiconductor quantum dots are briefly reviewed. A design of an single-photon electrically driven emitter containing a single InAs quantum dot and a Bragg microcavity is analyzed. It is shown that the external quantum efficiency of such emitters can be as high as 78%. Original Russian Text ? V.A. Gaisler, 2009, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2009, Vol. 73, No. 1, pp. 83–86.     

Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

Ultraviolet(UV) photodetectors have attracted more and more attention due to their great potential applications in missile tracking, flame detecting, pollution monitoring, ozone layer monitoring, and so on. Owing to the special characteristics of large bandgap, solution processable, low cost, environmentally friendly, etc., wide bandgap oxide semiconductor materials, such as ZnO, ZnMgO, Ga_2O_3, TiO_2, and Ni O, have gradually become a series of star materials in the field of semiconductor UV detection. In this paper, a review is presented on the development of UV photodetectors based on wide bandgap oxide semiconductor films.     

Infrared photodetectors based on graphene van der Waals heterostructures

We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation from the GL valence band to the continuum states above the inter-GL barriers (either via tunneling or direct transitions to the continuum states). Using the developed device model, we calculate the photodetector characteristics as functions of the GL-vdW heterostructure parameters. We show that due to a relatively large efficiency of the electron photoexcitation and low capture efficiency of the electrons propagating over the barriers in the inter-GL layers, GLIPs should exhibit the elevated photoelectric gain and detector responsivity as well as relatively high detectivity. The possibility of high-speed operation, high conductivity, transparency of the GLIP contact layers, and the sensitivity to normally incident IR radiation provides additional potential advantages in comparison with other IR photodetectors. In particular, the proposed GLIPs can compete with unitravelling-carrier photodetectors.     

Magnetic nanoparticles separation based on nanostructures

This study describes a magnetic array, which consists of depositing Fe nanowires on a porous alumina membrane. Such a device can be used as a planar magnetic separator. Its performance for the collection of Fe₃O₄ nanoparticles is experimentally shown. For magnetization of such iron nanowires in the vertical direction, we propose equations to calculate the theoretical absorption ratio.     

Superhydrophobic nanostructures based on porous alumina

Superhydrophobic polytetrafluoroethylene (Teflon®, DuPont) sub-micro and nanostructures were fabricated by the dipping method, based on anodization process in oxalic acid. The polymer sticking phenomenon during the replication creates the sub-microstructures on the negative polytetrafluoroethylene nanostructure replica. This process gives a hierarchical structure with nanostructures on sub-microstructures, which looks like the same structures as lotus leaf and enables commercialization. The diameter and the height of the replicated nano pillars were 40 nm and 40 μm respectively. The aspect ratio is approximately 1000. The fabricated surface has a semi-permanent superhydrophobicity, the apparent contact angle of the polytetrafluoroethylene sub-micro and nanostructures is about 160°, and the sliding angle is less than 1°.     

基于连续激光的纳米结构研制

基于激光受激辐射损耗原理的远场光学超分辨成像技术,当圆形入射高斯激光经过涡旋相位板调制后,将转变为中心光强为零的圆环形光束,该形状的激光束与光敏聚合物作用,能够制备出具有一定功能的纳米结构。介绍了自主搭建的基于圆环连续激光光源的激光直写系统,以及利用该系统研制的复合纳米结构。当光源为532 nm连续激光输出时,与正性光刻胶作用,得到直径 < 50 nm的纳米柱复合结构,以及整齐均匀的纳米柱阵列结构;与负性光刻胶作用,得到直径 < 100 nm的纳米通道,以及整齐均匀的中央有纳米通道的微米柱复合结构阵列。当光源为405 nm连续光纤激光时,与正性光刻胶作用,也得到了直径小至153 nm的纳米柱复合结构及其阵列。这些纳米结构的基本单元尺寸都突破了光学“阿贝衍射极限”的限制,具有实用潜力。     

High performance photodetectors based on high quality InP nanowires

In this paper,small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method.Benefitting from the high crystallinity and large specific surface area of InP nanowires,the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W ~(-1) and an external quantum efficiency of2.8 × 10~5% with a fast rise time of 110 ms and a fall time of 130 ms,even at low bias of 0.1 V.The effect of back-gate voltage on photoresponse of the device was systematically investigated,confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation.A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors.These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics.     

Mid-infrared tunable dual-wavelength generation based on a quasi-phase-matched optical parametric oscillator

We report an efficient optical parametric oscillator (OPO) of dual idler wave output based on periodically poled MgO:LiNbO₃ with a periodically-phase-reversed grating structure, which is pumped by a Q-switched 1.064 μm laser with a repetition rate of 50 kHz. 0.98 W of dual idler-waves at 3.824 μm and 3.731 μm is achieved at room temperature, leading to a 12.9% conversion efficiency. The crystal temperature tuning provides output tunability of the dual idler wavelengths. In addition, the sum frequency generation of the dual signal waves is simultaneously observed in the OPO cavity.     

Mid-infrared upconversion spectroscopy based on a Yb:fiber femtosecond laser

We present a system for molecular spectroscopy using a broadband mid-infrared laser with near-infrared detection. Difference frequency generation of a Yb:fiber femtosecond laser produced a mid-infrared (MIR) source tunable from 2100–3700 cm⁻¹ (2.7–4.7 μm) with average power up to 40 mW. The MIR spectrum was upconverted to near-infrared wavelengths for broadband detection using a two-dimensional dispersion imaging technique. Absorption measurements were performed over bandwidths of 240 cm⁻¹ (7.2 THz) with 0.048 cm⁻¹ (1.4 GHz) resolution, and absolute frequency scale uncertainty was better than 0.005 cm⁻¹ (150 MHz). The minimum detectable absorption coefficient per spectral element was determined to be 4.4×10⁻⁷ cm⁻¹ from measurements in low pressure CH₄, leading to a projected detection limit of 2 parts-per-billion of methane in pure nitrogen. In a natural atmospheric sample, the methane detection limit was found to be 30 parts-per-billion. The spectral range, resolution, and frequency accuracy of this system show promise for determination of trace concentrations in gas mixtures containing both narrow and broad overlapping spectral features, and we demonstrate this in measurements of air and solvent samples.     

Room-temperature infrared photodetectors with hybrid structure based on two-dimensional materials

Two-dimensional(2D) materials, such as graphene, transition metal dichalcogenides(TMDs), black phosphorus(BP),and related derivatives, have attracted great attention due to their advantages of flexibility, strong light–matter interaction,broadband absorption, and high carrier mobility, and have become a powerful contender for next-generation infrared photodetectors. However, since the thickness of 2D materials is on the order of nanometers, the absorption of 2D materials is very weak, which limits the detection performance of 2D materials-based infrared photodetectors. In order to solve this problem, scientific researchers have tried to use optimized device structures to combine with 2D materials for improving the performance of infrared photodetectors. In this review, we review the progress of room-temperature infrared photodetectors with hybrid structure based on 2D materials in recent years, focusing mainly on 2D–nD(n = 0, 1, 2) heterostructures, the integration between 2D materials and on-chip or plasmonic structure. Finally, we summarize the current challenges and point out the future development direction.     

基于graphene条带的硅纳米结构

采用分子动力学模拟方法研究了graphene条带上生长硅纳米结构的过程,分析了不同温度下硅原子在graphene条带边沿生成的新型纳米结构.研究表明,随机分布的硅原子吸附到锯齿型graphene条带边沿在不同的温度T下可生成不同类型的硅纳米结构：300K≤T<2000K时形成无规则的团簇,2000K≤T≤2800K时形成单原子链结构,2800K<T<3900K时形成含缺陷的硅链结构,T≥3900K时硅原子逐渐替代条带边沿的碳原子直至graphene条带破坏.而硅原子吸附到扶手椅型graphene条带边沿在300K≤T<3000 K内仅能形成非链状的不定型的硅纳米结构. 关键词： graphene 硅 纳米结构 分子动力学模拟     

Spin-tunneling magnetoresistive elements based on multilayered nanostructures

Technical Physics - The results of studies of characteristics of spin-tunneling magnetoresistive (STMR) elements fabricated from multilayered nanostructures using a mask technique have been...