首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 31 毫秒
1.
《Physics letters. A》1999,262(1):90-95
The controversial pinning dependence of the Hall conductivity (σxy) is studied in the vortex-liquid phase of high-Tc superconducting thin films. A strong pinning dependence of σxy is found to be triggered by a crossover from a regular liquid to the glassy liquid (GL) where vortices remain coupled in ab-plane. This result suggests that a non-linear effect in the GL region needs to be considered to account for the behavior of σxy in the whole vortex-liquid phase.  相似文献   

2.
《Nuclear Physics B》1996,469(3):419-444
The pressure and the energy density of the SU(3) gauge theory are calculated on lattices with temporal extent Nτ = 4, 6 and 8 and spatial extent Nσ = 16 and 32. The results are then extrapolated to the continuum limit. In the investigated temperature range up to five times Tc we observe a 15% deviation from the ideal gas limit. We also present new results for the critical temperature on lattices with temporal extent Nτ = 8 and 12. At the corresponding critical couplings the string tension is calculated on 324 lattices to fix the temperature scale. An extrapolation to the continuum limit yields Tc/√σ = 0.629(3). We furthermore present results on the electric and magnetic condensates as well as the temperature dependence of the spatial string tension. These observables suggest that the temperature dependent running coupling remains large even at T ≅ 5Tc. For the spatial string tension we find √σs/T=0.566(13)g22(T) with g2 (5Tc) ≅ 1.5.  相似文献   

3.
Temperature changes associated with adiabatic pressure changes (?T/?P)s have been measured for sodium and potassium at room temperature (297 K) under hydrostatic pressures up to 32 kbar. For both metals a large decrease in the value of (?T/?P)s is observed as the pressure increases. The Grüneisen parameter γ is related to (?T/?P)s by γ = Bs(?T/?T)s/T where Bs is the adiabatic bulk modulus. Available data for the pressure dependence of Bs and the isothermal bulk modulus BT are used to predict the pressure and volume dependence of γ.  相似文献   

4.
This paper generalises the theorem already obtained [Solid State Commun. 127 (2003) 505] for the high mobility, dissipationless, integer quantum Hall systems at T=0 K to the T>0 K situations. The results obtained are again suitable at both microscopic and macroscopic scales. In comparison [Solid State Commun. 127 (2003) 505], this generalised form gives a universal explicit expression for the Hall conductance σxy(μ,T) between any two points selected in such a system as a function of chemical potential and temperature. Further, thermal deviation Δσxy(μ,T) from the exact quantised values of σxy(μ,T) and the minimum slopes of Hall plateaux in the T>0 cases, observed already in experiments, are also derived in theory. Similar to those in the T=0 K case [Solid State Commun. 127 (2003) 505], the overall quantum Hall behaviour of the system can again be obtained from this theory by simply selecting two points on the two Hall contacts.  相似文献   

5.
Energy separation ΔEc between Λ and L minima of GaSb conduction band is deduced from temperature dependence of tunneling current in pn junctions. ΔEc is found to inceasing vx. temperature with a coefficient d(ΔEc/dT) of about - 2.10-4eV/dgK.  相似文献   

6.
For a 2D electron system in silicon, the temperature dependence of the Hall resistance ρxy(T) is measured in a weak magnetic field in the range of temperatures (1–35 K) and carrier concentrations n where the diagonal resistance component exhibits a metallic-type behavior. The temperature dependences ρxy(T) obtained for different n values are nonmonotonic and have a maximum at Tmax ~ 0.16TF. At lower temperatures T < Tmax, the change δρxy(T) in the Hall resistance noticeably exceeds the interaction quantum correction and qualitatively agrees with the semiclassical model, where only the broadening of the Fermi distribution is taken into account. At higher temperatures T > Tmax, the dependence ρxy(T) can be qualitatively explained by both the temperature dependence of the scattering time and the thermal activation of carriers from the band of localized states.  相似文献   

7.
The dependence of the superconducting transition temperature Tc on Ce impurity concentration and the specific heat jump at Tc as a function of Tc are reported for the system (LaCe)Sn3. The experimental results are analyzed using a theory due to Kaiser concerning the effect on superconductivity of nonmagnetic localized resonant impurity states This analysis yields values for the intraatomic Coulomb repulsion parameter Ueff and the Ce local density of states at the Fermi level N? (EF). The results of low temperature normal state heat capacity and magnetic susceptibility measurements which give independent estimates of N? (EF) are also reported. A large pressure dependence of the Tc of (LaCe)Sn3 alloys was observed for pressures up to 20 kbar. This behavior is similar to that previously observed in several other superconducting matrix-Ce impurity systems in which the Ce solute 4f electron shell undergoes a continuous-pressure induced demagnetization.  相似文献   

8.
The second-order structural phase transition was observed by X-ray diffraction technique in (NbSe4)3I. The transition temperature (Tc) was 274.2 K. No evidence of the formation of the charge-density wave was found out. Temperature dependence of the intensity of (0,5,12) reflection obeys the Landau theory of the second kind of phase transition near Tc. Temperature dependence of the integral breadth of (0,0,12) reflection indicates the effect of the soft-phonon mode below Tc. The existence of the structural phase transition, probably not associated with charge-density-wave formation, suggests the unique nature of (NbSe4)Z3I in the new series of compounds (MSe4)xI (M=Nb, Ta).  相似文献   

9.
The carrier concentration (Ns) dependence of electron mobility in Si (100) inversion layers has been measured at temperatures T = 1.5?70K for high- and low-mobility MOSFETs. An extrinsic term is observed in the T-dependent part of the scattering probability, τ?1T. At T = 4.4 K, τ?1T depends on Ns as N?1.9s in low mobility samples. In high-mobility samples, τ?1T increases with increasing Ns in high Ns region while τ?1TN?1.6s in low Ns region. The Ns-dependence of τ?1T becomes weaker with increasing T in both of low- and high-mobility samples. At Ns = 3 × 1012 cm?2, τ?1T depends on T as T1.8 in low-mobility samples and τ?1TT2.0 in high- mobility samples at T 5 K.  相似文献   

10.
We report LDA calculated band structure, densities of states and Fermi surfaces for recently discovered Pt-pnictide superconductors APt3P (A = Ca, Sr, La), confirming their multiple band nature. Electronic structure is essentially three dimensional, in contrast to Fe pnictides and chalcogenides. LDA calculated Sommerfeld coefficient agrees rather well with experimental data, leaving little space for very strong coupling super-conductivity, suggested by experimental data on specific heat of SrPt3P. Elementary estimates show, that the values of critical temperature can be explained by rather weak or moderately strong coupling, while the decrease in superconducting transition temperature T c from Sr to La compound can be explained by corresponding decrease in total density of states at the Fermi level N(E F). The shape of the density of states near the Fermi level suggests that in SrPt3P electron doping (such as replacement Sr by La) decreases N(E F) and T c , while hole doping (e.g., partial replacement of Sr with K, Rb or Cs, if possible) would increase N(E F) and possibly T c .  相似文献   

11.
We report on the ac dielectric permittivity (ε) and the electric conductivity (σω), as function of the temperature 300?K?T4IO3. The main feature of our measured parameters is that, the compound undergoes a ferroelectric phase transition of an improper character, at (368?±?1)K from a high temperature paraelectric phase I (Pm21 b) to a low temperature ferroelectric phase II (Pc21n). The electric conduction seems to be protonic. The frequency dependent conductivity has a linear response following the universal power law (σ( ω )?=?A(T s (T)). The temperature dependence of the frequency exponent s suggests the existence of two types of conduction mechanisms.  相似文献   

12.
The optical conductivity of CuO2 (copper-oxygen) planes in p- and n-type cuprates thin films at various doping levels is deduced from highly accurate reflectivity data. The temperature dependence of the real part σ1 (ω) of this optical conductivity and the corresponding spectral weight allow to track the opening of a partial gap in the normal state of n-type Pr2−xCexCuO4 (PCCO) but not of p-type Bi2Sr2CaCu2O8+δ (BSCCO) cuprates. This is a clear difference between these two families of cuprates, which we briefly discuss. In BSCCO, the change of the electronic kinetic energy Ekin—deduced from the spectral weight—at the superconducting transition is found to cross over from a conventional BCS behavior (increase of Ekin below Tc) to an unconventional behavior (decrease of Ekin below Tc) as the free carrier density decreases. This behavior appears to be linked to the energy scale over which spectral weight is lost and goes into the superfluid condensate, hence may be related to Mott physics.  相似文献   

13.
The theory of superconducting pairing due to antiferromagnetic exchange is considered. The strong dependence of the superconducting transition temperature T c on the lattice constant a observed recently in mercury superconductors is explained within the framework of this theory. Calculations have been performed based on the two-band p-d Hubbard model in the strong correlation limit. The large excitation energy Δpd for the antiferromagnetic exchange of two particles from different Hubbard subbands results in the suppression of the retardation effects and in the pairing of all the particles in the conduction subband with the Fermi energy E F pd:T c ?E F exp(?1/λ), where λ∝J. The dependence T c (a) and the isotope effect are explained by the dependence of the exchange interaction J on a and on zero-point vibrations of oxygen ions.  相似文献   

14.
Novel proton-conducting composites were prepared by incorporating molten CsHSO4 (CHS) into two types of mesoporous silica, MCM-41 with a one-dimensional (1-D) hexagonal structure and MCM-48 with a three-dimensional (3-D) cubic structure. Their proton conductivities (σ) were measured to examine effects of the incorporation and the dimensionality of the mesopores on their conductivity. Incorporation of proper amounts of MCMs maintained high proton conductivities as high as ~ 10? 3 S cm? 1 at temperatures above the superprotonic phase-transition temperature (Ts: 414 K) of CHS and improved the conductivity by 2 to 3 orders of magnitude at temperatures below Ts. In the case of MCM-41, more than 40 mol% mixing, however, caused steep drops in σ in both temperature ranges. On the other hand, the CHS/MCM-48 composite showed a linear increase in σ below Ts and a gradual decrease in σ above Ts with an increase in the MCM-48 content at least up to 60 mol%. X-ray diffraction (XRD) analysis revealed that CHS filled in the MCM mesopores became X-ray crystallographically amorphous and the amount of the amorphous phase increased with an increase in the MCM contents. In the case of the CHS/MCM-48 composites, the activation energy (Ea) for proton conduction below Ts drastically came close to that above Ts by mixing with MCM-48 up to 30 mol%. This indicates that the proton can transport similarly to the conduction mechanism in the superprotonic phase even below Ts. These results suggest that CHS adopts a highly proton-conducting amorphous phase in the mesopores at temperatures below Ts, and that MCM-48 with the 3-D cubic structure is more suitable for formation of high proton-conducting percolation paths.  相似文献   

15.
The experimental single-spin asymmetry (A N ) of charged pions produced in proton-proton and proton-nucleus collisions is analyzed phenomenologically as a function of kinematical variables. It is shown that the c.m. pion threshold energy (E 0 c.m. ) above which |A N | is positive depends on the reaction energy √s and on the particle-production angle θ c.m.. The dependence of the single-spin asymmetry on the kinematical variables in the region specified by the inequalities 0.7 < p T < 2.7 GeV/c and E c.m. > E 0 c.m. exhibits a scaling behavior. The dependence of A N on √s proves to be significant at moderate and low energies. Formulas that make it possible to predict the behavior of A N for charged pions over a broad region of kinematical variables are derived.  相似文献   

16.
Neutrons and γ-rays following 60 MeV proton bombardment of 165Ho were measured in coincidence with discrete γ-rays characteristic of the reaction channels (residual nuclei). The cross sections for the (p, xcnγ) reactions with x = 2–6, the γ-ray multiplicities, and the energy and angular distributions of the emitted neutrons were analyzed in terms of the preequilibrium and equilibrium deexcitation processes. Characteristic behaviours of the preequilibrium process were found in the (p, 2nγ) and (p, 4nγ) reactions where the sum ET, = ∑xEi of the energies Ei of the emitted neutrons was large, while those of the equilibrium process were typical for the (p, 6ny) reaction with small ET. The reactions are well reproduced by the expression σ. ≈0.35∑xσ (2, x?2) + 0.4∑xσ(1, χ?1)+ 0.25∑xσ(0, x), where σ(np, nc) stands for emission of np neutrons at the preequilibrium stage followed by evaporation of nc neutrons at the equilibrium stage.  相似文献   

17.
The current-voltage characteristics (CVC) at different temperatures, the temperature dependence of electric conductivity [σ(T)] and the currents of thermostimulated depolarization (TSD) have been studied in GaSe <0.05 at.% Co> on a combined basis.The location depth (Et=0.57eV) and the concentration of traps (Nt=2.7x1012cm?3) have been determined from the temperature dependence of the trapping factor. In the course of TSD investigations, levels with location depths of 0.28±0.02 and 0.57±0.03 eV have been revealed. It is noted that traps with the energy of 0.57±0.03 eV are found both with TSD measurements and on the basis of the temperature dependence of the electric conductivity and the trapping factor.It has been established that the hole centres above the valence band are responsible for the CVC, σ(T) and TSD. The location depths, concentrations and trapping cross-sections of these centres have been determined.  相似文献   

18.
The ac conductivity (σac) and dielectric permittivity (?) are determined in the temperature range 300?K?T3 compound. The results indicated that the compound behaves as an improper ferroelectric and undergoes a ferroelectric phase transition from a high temperature rhombohedral phase I to a low temperature monoclinic phase II at T c?=?(486?±?1)?K. A second structural phase transition was observed around 345?K. The conductivity varies with temperature range and for T?>?428?K intrinsic conduction prevails. Different activation energies in the different temperature regions were calculated. The frequency dependence of σ(ω) was found to follow the universal dynamic response [σ(ω)∝(ω) s(T)]. The thermal behaviour of the frequency exponent s(T) suggests the hopping over the barrier model rather than the quantum mechanical tunneling model for the conduction mechanism.  相似文献   

19.
Using 20.5 GeV electrons on protons, we measured inclusive π0's (of transverse momentum, pT, from 0 to 1.4 GeV/c) produced by virtual photons of energy, ν, from 4 to 16.5 GeV and four-momentum squared, q2, from ?1.8 to ?8.5 (GeV/c)2. Comparing with charged pion data, we find σπ0 = 12π++ σπ?), supporting the quark model. Photon knockout of a quark is favored as the interpretation of these data because of scaling in z = Eπ/ν and similarity in z-dependence of other pion production data. Consistent with this interpretation are the dependence of 〈pT〉 on q2, the azimuthal dependence, and fits to the constituent interchange model. We also observe a possible pT?4 dependence at large |q2| over a limited pT range.  相似文献   

20.
Temperature dependences of the velocity of longitudinal sound V 1 and the internal friction Q ?1 are studied for a La0.8Sr0.2MnO3 single crystal in the temperature range 5–350 K. The latter includes the temperature of the structural phase transition T s ≈95 K (from the Pnma orthorhombic low-temperature phase to the $R\bar 3c$ rhombohedral high-temperature one) and the Curie point T c =308 K. Near the temperatures T s and T c , the curves V 1(T) and Q ?1(T) exhibit pronounced singularities. Outside the vicinities of T s and T c , the velocity of sound monotonically decreases with increasing temperature. A thermal hysteresis of giant width is observed in the aforementioned dependences. The hysteresis is attributed to the following mechanism: when the crystal under study is heated starting at temperatures T<T s , some regions occupied by the Pnma low-temperature phase are retained in the $R\bar 3c$ matrix up to the temperature T=350 K.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号