Two-photon lasers based on intersubband transitions in semiconductor quantum wells

We propose to make a two-photon laser based on intersubband (sublevel) transitions in semiconductor nanostructures. The advantages and feasibility of such a two-photon laser are analyzed in detail using the density matrix approach. Both one-photon and two-photon gains in a three subband quantum well structure are studied on the same footing to show how the two-photon gain can be maximized, while the competing one-photon gain is minimized. The results show that a sufficient two-photon gain can be achieved to overcome one-photon competition and the loss of a conventional semiconductor cavity, making intersubband transitions one of the very few feasible approaches to two-photon lasing.     

STRUCTURE STUDY OF MODULATION-DOPED Cd1-xMnxTe: In/CdTe STRAINED LAYER MULTIPLE QUANTUM WELLS

The photomodulated reflectivity (PR) spectroscopy of modulation-doped diluted mag-netic semiconductor Cd_1-xMn_xTe: In/CdTe multiple quantum wells has been measured at 20-300K. Several spectral features associated with intersubband transitions have been found. The band structure of Cd_1-xMn_xTe: In/CdTe has been calculated by the Hartree self-consistent method. The results show that the theory is in agreement with experiments. In addition, an abnormal transition intensity ratio of 22H (the second heavy hole subband to the second electroa subband) to 11H (the first heavy hole subband to the first electron subband) caused by electron filled effect has been reported. At low temperature, a feature associated with Fermi level is observed, which has not been reported before.     

The Electronic Structure of a Polar Semiconductor Film

The electronic structure of a polar semiconductor film is investigated by using the Green's function method. The tight- binding approximation is employed to model the polar semiconductor by a one-dimensional finite chain of altering s orbital and p orbital. The energy states and their intensities are calculated for different n (n is the number of the layers of semiconductor film). The results are compared with those of a semi-infinite crystal.     

Ultrafast dynamics of intersubband excitations in a quasi-two-dimensional hole gas

We present the first study of ultrafast hole dynamics after resonant intersubband excitation in a quasi-two-dimensional semiconductor. p-type Si0.5Ge 0.5/Si multiple quantum wells are studied in pump-probe experiments with 150 fs midinfrared pulses. Intersubband scattering from the second heavy-hole back to the first heavy-hole subband occurs with a time constant of 250 fs, followed by intrasubband carrier heating within 1 ps. Such processes give rise to a strong reshaping of the intersubband absorption line, which is accounted for by calculations of the subband structure, optical spectra, and hole-phonon scattering rates.     

STRUCTURE STUDY OF MODULATION-DOPED Cd1-xMnxTe: In/CdTe STRAINED LAYER MULTIPLE QUANTUM WELLS

The photomodulated reflectivity (PR) spectroscopy of modulation-doped diluted mag-netic semiconductor Cd_1-xMn_xTe: In/CdTe multiple quantum wells has been measured at 20-300K. Several spectral features associated with intersubband transitions have been found. The band structure of Cd_1-xMn_xTe: In/CdTe has been calculated by the Hartree self-consistent method. The results show that the theory is in agreement with experiments. In addition, an abnormal transition intensity ratio of 22H (the second heavy hole subband to the second electroa subband) to 11H (the first heavy hole subband to the first electron subband) caused by electron filled effect has been reported. At low temperature, a feature associated with Fermi level is observed, which has not been reported before.     

Peculiarities of electron spectrum rearrangement for the double-well heterostructure GaAs/AlGaAs with a variable dimensionality of electronic states in an external electric field

Peculiarities of the electron spectrum rearrangement for the double-well heterostructure GaAs/AlGaAs with a variable dimensionality of electronic states in an external electric field are investigated theoretically and experimentally. The structure is an important part of the active element of a quantum-well unipolar semiconductor laser proposed by the authors earlier. The possibility of controlling the dimensionality of the lower laser subband in such an active element by an external electric field is demonstrated.     

Current-voltage characteristics of poly(diphenylenephthalide) thin films

Charge transfer near the threshold of polymer film transition (induced by a low uniaxial pressure) to the high-conductivity state is studied in an attempt to tackle the question of how the energy band structure of a wide-gap organic insulator varies near this threshold. The I-V characteristics of poly(diphenylenephthalide) films of various thickness versus uniaxial pressure are analyzed. The results obtained are treated within the model of space-charge-limited injection currents. The parameters of the injection model, such as the equilibrium concentration of electrons, electron mobility, the occupation of traps, etc., are estimated. It is concluded that deep traps due to an excess charge may appear in the energy gap of the polymer near the imref. This probably causes a narrow subband to arise, and charge transfer via this subband increases the charge carrier mobility and, hence, conductivity.     

Observation of size quantization in CdS layer by surface plasmon spectroscopy

Surface plasmon spectroscopy is used to investigate the optical properties of CdS overlayers on Ag-substrates. The experimental data for the SP damping in the spectral region of the CdS interband transitions show a pronounced structure. This structure can be explained with a simple model for the 2D subband structure occuring due to the size quantization perpendicular to the layer. This is probably the first optical observation of a size quantization effect in a single semiconductor layer by surface plasmon spectroscopy.     

Influence of ultrasonic cavitation on passive film of stainless steel

The electrochemical behaviors of passive film of stainless steel 0Cr13Ni5Mo under the condition of static state (quiescence) and ultrasonic cavitation in the HCl solution have been studied by means of polarization curve, electrochemical impedance spectroscopy (EIS) and capacitance potential measurement. The results indicate that the passive film shows a multi layer structure distribution, and presents a p-type semiconductor property under the condition of quiescence. The stability of passive film decreases, the semiconducting property changes to an n-type semiconductor in the presence of cavitation. The amount of transition electrons from valence band because of cavitation is related to the height of Fermi level of passive film semiconductor.     

Electron states in inversion layers on the small-gap semiconductor Hg1−x Cd x Te

Summary The subband structure of the narrow-gap semiconductor Hg_1−x Cd _x Te is investigated theoretically at finite temperature by a modified sixbandk·p model based on the effective-mass approximation. A study of the complete surface energy spectrum is reported. The mobile, bound and resonant states are treated by considering energy states in a large quantum box. The theory is applied to cases with strong interband interaction when the resonant character of the subband states is prominent. The authors of this paper have agreed to not receive the proofs for correction.     

The variably spaced superlattice energy filter

A new superlattice device concept which provides for high energy injection of electrons into a semiconductor layer is presented. The device is based on resonant tunneling of electrons between adjacent aligned quantum well levels in a variably spaced superlattice structure. By a judicial choice of well and barrier widths the energy levels under reverse bias become aligned such that resonant tunneling of electrons through the structure can occur. Thus, electrons are injected into a semiconductor layer at an energy corresponding to the energy of the first subband in the last quantum well. This structure has significant advantages over the conventional method of producing hot electrons in that a nearly monoenergetic high-energy electron distribution is created at low reverse bias and with high efficiency, since energy loss to phonons is inhibited as a consequence of the channeling of electrons through a narrow band of quantum states. Applications of the VSSEF structure to avalanche photodiodes, IMPATT diodes and electroluminescent devices are discussed.     

掺杂浓度及掺杂层厚度对Si均匀掺杂的GaAs量子阱中电子态结构的影响

本文通过自洽地求解薛定鄂方程及泊松方程计算了在温度T=0, 有效质量近似下, Si均匀掺杂的GaAs/AlGaAs量子阱系统的电子态结构. 研究了掺杂浓度及掺杂层厚度对子带能量, 本征包络函数, 自洽势, 电子密度分布, 及费米能量的影响. 发现在给定掺杂浓度下, 子带能量随掺杂层厚度的增加单调递减, 自洽势的势阱变宽变浅, 电子密度分布变宽, 峰值变低; 在给定掺杂层厚度下, 随掺杂浓度的增加子带能量及费米能级单调递增, 自洽势阱变深变陡变窄, 电子密度分布的峰值变高, 集中在中心. 关键词： 掺杂 量子阱 电子结构 半导体GaAs     

Subband-level renormalization and absorptive optical bistability in semiconductor multiple quantum well structures

A microscopic theory of many-body effects in the lowest subbands of semiconductor multiple quantum well structures is presented. The renormalized subband levels are calculated for a broad temperature range and optical bistability due to induced absorption is predicted.     

Spin gapless semiconductor like Ti2MnAl film as a new candidate for spintronics application

A novel Heusler ferrimagnet Ti₂MnAl film has been grown on Si(001) substrate using magnetron sputtering. Characteristics of its magnetic and transport properties reveal the spin‐gapless‐semiconductor (SGS) nature of the stoichiometric Ti₂MnAl, in agreement with theoretical prediction. The as‐grown SGS‐like Ti₂MnAl film demonstrated high Curie temperature, nearly compensated ferrimagnetic properties with small coercivity and low magnetization. It also showed semiconductor‐like behavior at room temperature allowing good compatibility with commercial Si‐based semiconductor. In this regards, Ti₂MnAl film is a potential candidate material for spintronics application, especially for the minimization of energy consumption of device. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Plasmon modes of a superlattice — Classical vs quantum limits

The collective plasmon excitations of a superlattice are investigated in both the classical and quantum limits. Using a model that is applicable to superlattices whose constituent layers are either semiconductor- semiconductor, semiconductor-metal, or metal-metal, we show that the surface plasmon interface modes of each layer (slab) couple via the long range Coulomb interaction into two bands of plasmons with dispersion along the superlattice axis. Results for plasmon dispersion are presented for the classical limit (de Broglie wavelength less than the layer width) where the response is treated via a solution of Maxwell's equations using the bulk 3-D dielectric constant to describe each intervening layer. These results are compared to the plasmon dispersion in the quantum regime where the wave-vector frequency dependent dielectric constant of the superlattice is calculated taking into account quantization effects (subband structure). The relationship between the modes in both limits is derived.     

Density-functional calculation of subband structure on semiconductor surfaces

The Hohenberg-Kohn-Sham theory of an inhomogeneous electron gas is applied to the calculation of subband structures of n-channel accumulation and inversion layers on a Si(100) surface. The exchange-correlation effect is shown to be very important and lower the subband energies considerably. In case of accumulation layers it changes the subband structure. The first excited subband becomes really a bound state in contrast to a result of the Hartree approximation. The agreement between the theory and experimental results of intersubband optical transitions is satisfactory. The effective mass and the g factor are also calculated.     

Signatures of discontinuity in the exchange-correlation energy functional derived from the subband electronic structure of semiconductor quantum wells

The discontinuous character of the exact-exchange-correlation (xc) energy functional of density functional theory is shown to arise naturally in the subband spectra of semiconductor quantum wells. Using an ab initio xc functional, including exchange exactly and correlation in an exact partial way, a discontinuity appears in the xc potential, each time a subband becomes slightly occupied. Exchange and correlation give opposite contributions to the discontinuity, with correlation overcoming exchange. The jump in the intersubband energy is in excellent agreement with experimental data.     

Electronic structure of two-dimensional semiconductor systems

The motion of two-dimensional carriers in semiconductor heterojunctions, quantum wells and superlattices is discussed, with emphasis on subband dispersion parallel to the interfaces and on quantization in a perpendicular magnetic field. The envelope function approximation is shown to provide an efficient and accurate method for the calculation of electronic states. It is shown that for states derived from degenerate or coupled bulk bands (valence bands, k . p-coupled conduction and valence bands in narrow-gap semiconductors) striking non-parabolicities of the subband dispersion and non-linearities of the Landau levels versus magnetic field occur. Results for GaAs-AlGaAs and InAs-GaSb systems are presented and compared with experiment.     

Field-effect transistor based on a combination of nanometer film and undoped semiconductor

The metal oxide nanometer film semiconductor field-effect transistor (MONSFET) is reported. In this device, a combination of undoped semiconductor and nanometer film serves as the active layer. When a negative gate-source voltage is applied, electrons from the nanometer film enter into the semiconductor layer to form the conducting channel, and the drain current increases without saturation. This structure makes more materials available for the active layer, and thus suggests a new route to enrich the applications as well as to enhance the performances.     

Electrical properties of semiconductor surfaces

The formation of space charge layers by the action of surface states and the influence of more than one bulk impurity level are treated. Special attention is given to compound semiconductors. Recent experimental results are reported of subband spectroscopy, work function measurements, and metal semiconductor junction investigations. Requirements for simultaneous surface conductivity and LEED measurements are given. The contribution of various scattering processes to the dc conductivity is discussed. Finally the relations between surface reactions and space charge layers are considered.