Surface photoemission in the 4d band from polycrystalline silver surfaces

Surface induced local d-band states in the upper 4d band between ～ 4 and ～ 5.2 eV below E_Fermi have been identified for polycrystalline silver films in photoemission experiments using synchroton radiation. A thin over-coat (10 å) by an Al film leads to a depression of these surface induced local states whereas a change from s- to p-polarized excitation leads to an enhancement. Deposition of additional silver (～ 3 Å) at 120 K induces additional emission 4.2 eV below E_F with a FWHM of only ～ 0.4 eV.     

Electroabsorption in TlInS2

Electroabsorption spectra of single crystals have been studied near the fundamental absorption edge at 77 and 300 K. At 300 K two positive peaks (2.34 and 2.42 eV) and a negative peak (2.38 eV) are observed in the electroabsorption spectrum. At liquid-nitrogen temperature a fine structure corresponding to the formation of a parabolic exciton (2.503 eV) is observed.Values of the width of the forbidden gap E_g, the n = 1 exciton positions, the exciton activation energy ΔE_b, the effective Bohr radius a_exc, the reduced effective mass of an electron-hole pair μ, and the exciton ionization field F(E_g = 2.535 eV, E_exc = 2.503 eV, E_b = 32 meV, $\text{a}{}_{\mathrm{<mtext>exc</mtext>}}\text{=}\text{28}\text{A}\text{A;}\text{;}$;, μ = 0.15 m₀, and F = 1.2 × 10⁵ V cm^-1) have been determined from the electroabsorption spectrum.     

Properties of single vacancies and of divacancies in copper

The electrical resistivity change at high temperatures due to vacancies was determined as a function of temperature. From the data E^F_1V=1.00 eV, E^B_2V=0.45 eV and about C^tot_V=4 × 10^-4 at the melting point results.     

Electron states on the (111) surface of copper

A calculation of electronic states at the (111)-surface of Cu in the energy region around E_F is presented. The calculation is based on the empirical pseudopotential method. A proper position of an abrupt potential barrier ensures overall charge neutrality. A surface state is found at 0.13 eV below E_F, being localized midway between atomic layers. The effective mass of the associate bands is 0.39m_e. Our results are in good agreement with directional photoemission data.     

Camel's back induced stabilization of electron-hole liquids : GaP

A camel's back-like nonparabolicity of the longitudinal electron mass enhances the density of states and strongly stabilized an electron-hole-liquid. In GaP therefore the EHL density is doubled to 8.6 × 18¹⁸cm^?3 and the Fermi energy ratio E_F^h/E_F^e changes from 1.9 to 4.9. The theoretical binding energy agrees with the experimental E_B=17.5±3meV interpreting the luminescence at 2.30 eV as a superposition of liquid and plasma recombination radiation.     

On directly measuring relative Fermi energies of noble metals and their alloys

We present the first evidence of direct measurement of relative Fermi energies in alloys and between pure metals. From applying the “atomic” concept of core hole final state screening, the Auger energy shift of noble metal A equals E_F^A?E_F(x). High resolution Auger shifts in P_1?x^tCu_x,Au_xCu_1?x and Au_xAg_1?x demonstrate experimental verification of this simple relation. We find E_F^CuE_F^Au ? ? 0.2 eV, and E_F^Pt ? E_F^Cu and E_F^Ag ? E_F^Au.     

Interpretation of photoemission from Na (1 1 0)

A self-consistent calculation of the electronic structure of the Na (1 1 0) surface, using an embedding method to treat the semi-infinite system, gives a prominent surface resonance peak at 0.75 eV above the Fermi energy. The tail of this resonance extends below E_F at the surface, and it is suggested that surface photoemission from this tail is responsible for the peak in the photocurrent at E_F observed experimentally, A photoemission calculation, with a non-self-consistent surface potential, reproduces the enhancement of the peak as a direct transition moves through it.     

On the problem of electron-emission mechanisms in the cathode spot of a vacuum arc discharge

A criterion for the F-type mechanism of electron emission in a vacuum-arc cathode spot is developed. It is shown that the implementation of F-electron emission in the cathode spot necessitates the fulfillment of three conditions: first, generation of the optimal electric field E _opt, second, implementation of atomic-ionic balance at which the E _opt field is generated and, third, retention of the cathode temperature lower than the inversion temperature of Nottingham’s effect. The calculations show that the heat of the evaporation of cathode atoms which meets these requirements does not exceed λ_a ～ 1.1–1.2 eV. Taking the possibility of F-T-emission into account, the evaporation heat can be slightly higher than λ_a ～ 1.5–1.6 eV. However, in this case, it turns out to be fairly small. Note that the number of such metals is not very large.     

Electronic structure of PdO studied by photoemission (XPS,UPS)

In this paper we present the results of photoemission studies (XPS and UPS) performed on a polycrystalline surface of PdO. The electron density of states (EDOS) deduced both from XPS and UPS (He_I and He_II) are very similar. The valence band of PdO, which differs significantly from the Pd one, can be built up by four structures located at 0.5 eV, 2.2eV, 4.5 eV and 6.5 eV below E_F. The various electronic contributions (p or d) in the band are considered and, in order to explain our spectra, we discuss several hypothesis taking into account the possible existence of satellite lines or crystal field effects. Our XPS and UPS spectra show that the energy bands of PdO are narrow (～ 2–3 eV), moreover the energy shift of the core levels (|ΔE^F_B| = 2 eV) is important : these results suggest that the correlations between the d electrons may be important in PdO.     

Electronic structure of the conduction band of the interface region of ultrathin films of substituted perylenedicarboximides and the germanium oxide surface

The results of the investigation of the electronic structure of the conduction band and the interfacial potential barrier during the formation of interfaces of dioctyl-substituted perylenedicarboximide (PTCDI-C₈) and diphenyl-substituted perylenedicarboximide (PTCDI-Ph) ultrathin films with the oxidized germanium surface have been presented. The experimental results have been obtained using the very low energy electron diffraction (VLEED) technique in the total current spectroscopy (TCS) mode at energies in the range from 5 to 20 eV above the Fermi level E_F. The positions of the maxima of the fine structure of total current spectra (FSTCS) of the PTCDI-C₈ and PTCDI-Ph films differ significantly in the energy range from 9 to 20 eV above the Fermi level E_F, which can be associated with the difference between the substituents of the chosen molecules, dioctyl- and diphenyl-, respectively. At the same time, the positions of the lowenergy maxima in the FSTCS spectra at an energy 6–7 eV above the Fermi level E_F for the PTCDI-C₈ and PTCDI-Ph films almost coincide with each other. It has been suggested that these maxima are attributed to the electronic states of the perylene core of the molecules under investigation. The process of the formation of interfacial potential barriers of the PTCDI-C₈ and PTCDI-Ph films with the oxidized germanium surface has been analyzed. It has been found that the work functions of the surface, E_vac–E_F, differ little from 4.6 ± 0.1 eV over the entire range of organic coating thicknesses from 0 to 6 nm.     

Some comments on the electronic properties of the surface space charge layer of copper phthalocyanine thin films

A simple analysis, using a theory of the surface space charge layer of semiconductors, of the published values of the work function φ and surface ionization energy Φ_s of copper phthalocyanine (CuPc) thin films was performed. Using a well known position of the Fermi level E_F within the band gap E_g the values of its absolute band bending eV_s and surface electron affinity X_s were determined. A small negative value of the absolute band bending eV_s = −0.17 ∓ 0.15 eV has been interpreted by the existence of the filled electronic surface states localized in the band gap below the Fermi level E_F. Such states were predicted theoretically for thin films and the crystalline surface of CuPc, and attributed to surface lattice defects of a high concentration.     

H2O interaction with clean and oxygen precovered Ni(110)

The interaction of water vapour with clean as well as with oxygen precovered Ni(110) surfaces was studied at 150 and 273 K, using UPS, ΔΦ, TDS, and ELS. The He(I) (He(II)) excited UPS indicate a molecular adsorption of H₂O on Ni(110) at 150 K, showing three water-induced peaks at 6.5, 9.5 and 12.2 eV below E_F (6.8, 9.4 and 12.7 eV below E_F). The dramatic decrease of the Ni d-band intensity at higher exposures, as well as the course of the work function change, demonstrates the formation of H₂O multilayers (ice). The observed energy shift of all water-induced UPS peaks relative to the Fermi level (ΔE_max = 1.5 eVat 200 L) with increasing coverage is related to extra-atomic relaxation effects. The activation energies of desorption were estimated as 14.9 and 17.3 kcal/mole. From the ELS measurements we conclude a great sensitivity of H₂O for electron beam induced dissociation. At 273 K water adsorbs on Ni(110) only in the presence of oxygen, with two peaks at 5.7 and 9.3 eV below E_F (He(II)), being interpreted as due to hydroxyl species (OH)^δ? on the surface. A kinetic model for the H₂O adsorption on oxygen precovered Ni(110) surfaces is proposed, and verified by a simple Monte Carlo calculation leading to the same dependence of the maximum amount of adsorbed H₂O on the oxygen precoverage as revealed by work function measurements. On heating, some of the (OH)^δ? recombines and desorbs as H₂O at ? 320 K, leaving behind an oxygen covered Ni surface.     

Evidence for an alkali-like conduction band in alkali graphite intercalation compounds

The valence bands of pure graphite and several alkali graphite intercalation compounds (AGIC's) were studied by UPS (hv = 21.2 eV). The most significant observation is an intensity peak at the Fermi energy E_F in the intecalation compounds. This peak is mainly due to alkali-like s-states. The density of states at E_F is enhanced by a factor of 30 compared to pure graphite. The alkali-like conduction bands in the first stage AGIC's are similar to those of pure alkali metals.     

Hydrogen chemisorption on W {110}: Angle-resolved photoemission

Normal photoemission spectra (k_∥ = 0) from a W {110} surface reveal 2 major resonances during hydrogen chemisorption, at 2.0 and 4 eV below the Fermi level, E_F. The former appears at 300 K during filling of the low coverage β₂ state, and the latter grows as the β₁ state is filled. Detailed spectra obtained along the $\text{}\text{?}$gS and $\text{}\text{?}$gD azimuths are reported, showing additional resonances at ~0.5, 1,3,6 and ~7 eV below E_F. A structural model is proposed, based on a consideration of the present results in relation to RHEED and HRELS data, for the H-saturated surface in which a p(1 × 2) structure is formed, at a H: surface W ratio of unity, with β₁ adatoms occupying a close bridge position and β₂ adatoms in a 3-fold hollow site.     

An investigation of the adsorption of oxygen and oxygen containing species on platinum by photoelectron spectroscopy

It is shown that XPS can detect 0.01 monolayers of adsorbed carbon or oxygen and can identify the chemical state of the adsorbed atom(s). Two states of adsorbed oxygen were resolved by thermal desorption spectroscopy and by XPS. The O 1s binding energies (^FE_B) were 530.2 and 533 eV below the platinum Fermi level for the strongly and weakly adsorbed states respectively. (^FE_B) did not vary with coverage. The resulting apparent variation of (^VE_B), the vacuum level referenced value, is discussed in terms of a simple model for the work function Φ which was measured in situ. UPS indicated that the weakly adsorbed state is probably molecular, with levels at 6.1, 9.3, 10.4 and l2.4 eV below the Fermi level. The main change in the UPS spectra produced by the strongly adsorbed state was a reduction of a peak close to the Fermi level.     

Electronic structure of uranium monochalcogenides and uranium monopnictides

Single crystals of the uranium chalcogenides US, USe, UTe and the pnictides UAs and USb have been cleaved under high and ultrahigh vacuum conditions and the near normal incidence reflectivity has been measured in situ from 0.03 to 12 eV. In the case of US the spectral range of the measurement was further extended down to 0.0017 eV. The various optical functions (?₁, ?₂, σ, E_loss, n_eff) have been deduced by a Kramers-Kronig analysis. Typical features of all spectra are weak intraband contributions and the extension of strong interband transitions to very low photon energies. Highly damped plasmons are found at 4.25 eV for US, 3.5 eV for USe nad 2.2 eV for UTe. For the pnictides UAs and USb the corresponding values are 2 eV and 1.6 eV, respectively.The apparent contradiction between the presence of a large number of conduction electrons and only very weak intraband contributions is resolved within the spectral exclusion model of Keller. In this self-consistent cellular multiple scattering calculation the coupling of the narrow 5f states and the much wider 6d states produces a dip in the density of d states near E_F where the f electrons form a resonance state. Quantitative agreement is obtained between theory and experiment for US. For all investigated compounds empirical energy level schemes are derived.The reflectivity measurements down to 1.7 meV for US reveal the existence of a further excitation at 39 meV which is assigned to a transverse optical phonon mode. This unique observation of an optical phonon in a direct reflectivity measurement of a metal supports the picture of a small density of conduction electrons at E_F. Further arguments in favor of the spectral exclusion model are presented and the question of the localization of thr 5f electrons in various uranium compounds is discussed.     

Nonadiabatic superconductivity in fullerene-based materials

Fullerene compounds have phonon frequencies up to ω_max=0.2 eV and a Fermi energy of the order E_F=0.3 eV. It is, therefore, expected that the adiabatic parameter λω_ph/E_F (where λ is the electron-phonon coupling constant and ω_ph is a typical phonon frequency) is not a priori negligible and the conventional theory of phonon-mediated superconductivity is inapplicable in this case. Here, we discuss how the conventional theory is inconsistent with a number of experimental data and provide a generalization of the theory in order to include nonadiabatic electron-phonon effects. We show that the inclusion of nonadiabatic channels in the electron-phonon interaction is a key element for the high values of T_c in these materials. We make several predictions regarding the superconducting and normal-state properties of fullerene compounds that can be tested experimentally.     

Adsorbate enhanced Ti-3d photoemission from layered TiSe2 surfaces

Angle resolved photoelectron spectra of 1T-TiSe₂ single crystals $\text{(}\text{h}\text{?}\text{ω = 21.2}\text{eV}\text{)}$ have been investigated as a function of exposure to H₂O, CO, N₂ and O₂ at room temperature. A significant enhancement of the Ti-3d emission near the Fermi energy E_F is observed for H₂O and CO exposures of several kL. As compared to the clean surface this emission extends over the entire Brillouin zone. The results indicate that by H₂O and CO adsorption the lowest d-subband is pulled below E_F possibly by local band bending. Additional relaxation effects at the surface associated with changes in d-band matrix elements may occur. The intensity of the Se-4p derived valence band emission down to 7 eV below E_F remains essentially unchanged.     

Investigation of crystal structure and new ellipsometric properties of hexagonal CdS epilayers

High quality hexagonal CdS epilayer was grown on GaAs (1 1 1) substrates by the hot-wall epitaxy method. The crystal structure of the grown CdS epilayers was confirmed to be the hexagonal structure by X-ray diffraction pattern and scanning electron microscopy image. The optical properties of the hexagonal CdS epilayers were investigated in a wide photon energy range between 2.0 and 8.5 eV using spectroscopic ellipsometry (SE) at room temperature. The data obtained by SE were analyzed to find the critical points of the pseudodielectric function spectra, 〈?(E)〉 = 〈?₁(E)〉 + i〈?₂(E)〉, such as E₀, E_1A, E_1B, E^0′, F₁, and two E₂ structures. In addition, the second derivative spectra, d²?(E)/dE², of the pseudodielectric function of hexagonal CdS epilayers were numerically calculated to determine the critical structures. Four structures, such as E^0′F₁, and two E₂ structures, from 6.0 eV to 8.0 eV were observed, for the first time, at 300 K by ellipsometric measurements for the hexagonal CdS epilayers.     

M-Zentrenbildung in röntgenbestrahlten KCl-Kristallen

The production of F- and M-centres in KCl by X-irradiation has been studied at temperatures between ?20 °C and 50 °C. The optical absorption measurements could be conducted without interrupting the X-irradiation. The results can be summarized as follows: 1. In Harshaw KCl crystals the number of F-centres created by the so-called fast coloration process was proportional to the height of the absorption band at 204 mμ prior to the irradiation. 2. The F-centres formed by the fast process did not contribute to the formation of M-centres. 3. In crystals with a strong absorption band at 204 mμ unstable M-centres were observed, which decayed rapidly after the cessation of the X-irradiation. Their concentration was found to be independent of the F-centre concentration. 4. At temperatures below 0 °C the relation between the concentration of the stable M-centres and the F-centre concentration could not any longer be represented by [M]=k ₁₂·[F₁]·[F₂]+k ₂₂·[F₂]², F₁ and F₂ referring to the F-centres created respectively by the fast and the slow coloration process. Except at very low F₂-centre concentrations however the relationship [M]=k ₀+k ₂·[F₂]² represented the experimental data at all temperatures between ?20 °C and 50 °C. At constant temperaturek ₂ varied withL, the X-ray energy absorbed per unit time and unit volume, according to 1/k ₂=a+bL+cL ². The temperature dependence ofa ^?1 b ^?1 andc ^?1 could be approximated by Boltzmann factors. The corresponding activation energies wereE _a=0.12 eV,E _b=0.53 eV,E _c=0.97 eV.