Halides‐Assisted Low‐Temperature Synthesis of Hexagonal Boron Nitride Nanosheets

Hexagonal boron nitride nanosheets (hBNNS) have various promising applications in dielectric and thermal conductive materials. However, in the bottom‐up method, well‐crystallized hBNNS could only be attained at very high temperatures. In this paper, a facile halide‐assisted hydrothermal assembly (HAHTA) method for the low‐temperature synthesis of well‐crystallized hBNNS is prepared. In HAHTA, the lateral growth of hBNNS is enhanced by the halide addition in the precursor, and the dimension reaches several micrometers. In addition, the obtained hBNNS enhance the oxidization resistance of vanadium dioxide (VO₂) though the formation of a VO₂/hBN composite, which is meaningful in facilitating the potential applications of VO₂ as smart phase transition materials.     

Carbon‐Doped Metal Oxide Nanoparticles Prepared from Metal Nitrates in Supercritical CO2‐Enabled Polymer Nanoreactors

Various C‐doped metal oxide nanoparticles (NPs) are prepared from metal nitrates in poly‐(methyl vinyl ether‐co‐maleic anhydride) (PVM/MA) nanoreactors. The loading of metal nitrates in the nanoreactors is realized via a process of solution‐enhanced dispersion by supercritical CO₂. When the temperature exceeds the thermal decomposition temperature of the nitrates, the nitrates‐loaded nanoreactors transform into C‐doped metal oxide NPs. ZnO, NiO, and Co₃O₄ NPs as representative of the doped oxides are successfully fabricated. A precise control over the doping concentration and doping site in the lattice is achieved by changing the mass ratio between PVM/MA and metal nitrate. The controllable carbon doping avoids undesirable aggregation of carbon species and metal oxide NPs, endows the NPs with broad and strong absorption bands in the visible light region, and creates channels for separation of photo‐generated electrons and holes. In this regard, the resultant C‐doped metal oxide NPs exhibit excellent photocatalytic, photo‐induced antibacterial, and photothermal performances.     

Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(1 0 0)-2 × 1 surfaces

The growth of Pb films on the Si(1 0 0)-2 × 1 surface has been investigated at low temperature using scanning tunneling microscopy. Although the orientation of the substrate is (1 0 0), flat-top Pb islands with (1 1 1) surface can be observed. The island thickness is confined within four to nine atomic layers at low coverage. Among these islands, those with a thickness of six layers are most abundant. Quantum-well states in Pb(1 1 1) islands of different thickness are acquired by scanning tunneling spectroscopy. They are found to be identical to those taken on the Pb(1 1 1) islands grown on the Si(1 1 1)7 × 7 surface. Besides Pb(1 1 1) islands, two additional types of Pb islands are formed: rectangular flat-top Pb(1 0 0) islands and rectangular three-dimensional (3D) Pb islands, and both their orientations rotate by 90° from a terrace to the adjacent one. This phenomenon implies that the structures of Pb(1 0 0) and 3D islands are influenced by the Si(1 0 0)-2 × 1 substrate.     

Perturbation of Ge(1 1 1) and Si(1 1 1)√3α-Sn surfaces by adsorption of dopants

We test the response of the √3 × √3α reconstructions formed by 1/3 monolayer of tin adatoms on silicon and germanium (1 1 1) surfaces upon doping with electrons or holes, using potassium or iodine as probes/perturbers of the initial electronic structures. From detailed synchrotron radiation photoelectron spectroscopy studies we show that doping with either electrons or holes plays a complimentary role on the Si and Ge surfaces and, especially, leads to complete conversion of the Sn 4d two-component spectra into single line shapes. We find that the low binding energy component of the Sn core level for both Si and Ge surfaces corresponds to Sn adatoms with higher electronic charge, than the Sn adatoms that contribute to the core level high binding energy signal. This could be analyzed as Sn adatoms with different valence state.     

STM image visualization of Si(1 1 1) 7 × 7 surface (graphic simulation and implementation)

The possibilities of graphic STM image simulation of a clean Si(1 1 1) 7 × 7 surface at atomic level are indicated. The presented procedure takes into account various types of deformation on the surface near the Fermi level in order to classify them and explain their origin. It also gives a clear hint to insert relevant physical phenomena in a suggested analysis. This goal is achieved exploiting the results of DAS (dimmer adatom stacing fault) model by means of standard mathematical programmes. A clean Si(1 1 1) 7 × 7 surface is considered as the representative example, but similar evaluation is possible for another non-metal and metal surfaces.     

Early stages of vanadium deposition on Si(1 1 1)-7 × 7

We investigate the low-coverage regime of vanadium deposition on the Si(1 1 1)-7 × 7 surface using a combination of scanning tunnelling microscopy (STM) and density-functional theory (DFT) adsorption energy calculations. We theoretically identify the most stable structures in this system: (i) substitutional vanadium atoms at silicon adatom positions; (ii) interstitial vanadium atoms between silicon adatoms and rest atoms; and (iii) interstitial vanadium - silicon adatom vacancy complexes. STM images reveal two simple vanadium-related features near the Si adatom positions: bright spots at both polarities (BB) and dark spots for empty and bright spots for filled states (DB). We relate the BB spots to the interstitial structures and the DB spots to substitutional structures.     

Double counting in LDA + DMFT—The example of NiO

An intrinsic issue of the LDA + DMFT approach is the so called double counting of interaction terms. How to choose the double-counting potential in a manner that is both physically sound and consistent is unknown. We have conducted an extensive study of the charge-transfer system NiO in the LDA + DMFT framework using quantum Monte Carlo and exact diagonalization as impurity solvers. By explicitly treating the double-counting correction as an adjustable parameter we systematically investigated the effects of different choices for the double counting on the spectral function. Different methods for fixing the double counting can drive the result from Mott insulating to almost metallic. We propose a reasonable scheme for the determination of double-counting corrections for insulating systems.     

Conformational analysis of N‐phenyl‐ and N‐trifyl‐4,4‐dimethyl‐4‐silathiane 1‐sulfimides

N‐Substituted 4,4‐dimethyl‐4‐silathiane 1‐sulfimides [R = Ph ( 1 ), CF₃ ( 2 )] were studied experimentally by variable temperature dynamic NMR spectroscopy. Low temperature ¹³C NMR spectra of the two compounds revealed the frozen ring inversion process and approximately equal content of the axial and equatorial conformers. Calculations of the 4‐silathiane derivatives 1 , 2 and the model compound [R = Me ( 3 )] as well as their carbon analogs, the similarly N‐substituted thiane 1‐sulfimides [R = Ph ( 4 ), CF₃ ( 5 ), Me ( 6 )] at the DFT/B3LYP/6–311G(d,p) level in the gas phase and in chloroform solution using the PCM model at the same level of theory showed a strong dependence of the relative stability of the conformer on the solvent. The electronegative trifluoromethyl group increases the relative stability of the axial conformer. Copyright © 2010 John Wiley & Sons, Ltd.     

An 8 × 10 Gbps parallel single-chip light-to-logic converter

An 8 × 10 Gbps direct light-to-logic converter for hybrid mounted Ge photodiodes is presented. The receiver is realized in standard 0.35 μm SiGe BiCMOS technology and the Ge photodetector is directly mounted on the top of the CMOS wafer. Each of the 8 channels includes a transimpedance amplifier, limiting amplifier stages and a 50 Ω CML output driver. The overall transimpedance is 275 kΩ and at a data rate of 10 Gpbs a sensitivity of − 23.1 dBm (BER = 10⁻⁹) is reached.     

Use of N‐chloro‐N‐methyl‐p‐toluenesulfonamide in N‐chlorination reactions

Second‐order rate constants (k₂) were determined for the addition of ten nitrogenous organic compounds (benzylamine, 2,2,2‐trifluoethylamine chlorhidrate, methylamine chlorhidrate, glycine ethyl ester chlorhidrate, glycine, glycylglycine chlorhidrate, morpholine, pyperidine, pyperazine and dimethylamine) to the N‐chloro‐N‐methyl‐p‐toluenesulfonamide (NCNMPT) in the formation reaction of N‐chloramines in aqueous solution at 25 °C and ionic strength 0.5 M. The series of nucleophiles considered is structurally very varied and covers five pK_a units. The kinetic behaviour is similar for all compounds, being the elementary step the transfer of chlorine from the NCNMPT molecule to the nitrogen of the free amino group. These reactions were found first order in both reagents. The values of the rate constants indicate that the more basic amines produce N‐chloramines more readily. Rate constants for the nucleophilic attack are shown to correlate with literature data for some of these nitrogenous organic compounds in their reaction with N‐methyl‐N‐nitroso‐p‐toluenesulfonamide. Both reactions involve that the rate determining step is the attack of nitrogenous compounds upon electrophilic centre (Cl or else NO group). NCNMPT is a particularly interesting substrate, for which has not hitherto been published kinetic information, that allows us to assess the efficiency and the competitiveness of this reaction and compare it with other agents with a Cl⁺ atom. Copyright © 2013 John Wiley & Sons, Ltd.     

Vibrationally-assisted dissociative adsorption of oxygen on Ru(0 0 0 1)-p(2 × 1)-O

Supersonic molecular beam technique combined with high resolution X-ray photoelectron spectroscopy using synchrotron radiation was applied to the study of the dynamics of dissociative adsorption of oxygen on Ru(0 0 0 1) surface in high coverage region. The Ru(0 0 0 1) surface pre-covered with oxygen atoms of 0.5 monolayer, which corresponds to the p(2 × 1)-O structure, was dosed to oxygen molecules with translational energy of 0.5 eV. Oxygen uptake was compared between the cases with and without the beam source heated in order to verify the effects of internal energy of oxygen. We found drastic enhancement in initial sticking probability of oxygen when the beam source was heated to 1400 K. We concluded that the enhancement of sticking probability is mainly caused by molecular vibrational excitation, indicating that dissociation barrier is located in the exit channel on potential energy surface.     

Olefin bonding mechanism and growth to (1 0 0)(2 × 1):H diamond

The bonding and growth mechanism of photochemically attached olefin molecules to (1 0 0)(2 × 1):H diamond is characterized using atomic force (AFM) and scanning tunneling microscopy (STM) experiments in combination with molecular orbital calculations. To identify growth schemas, diamond surfaces after 10, 40 and 90 min of photo-chemically stimulated growth have been characterized. These data show clearly island formation which is discussed taking into account a growth model from silicon. The island growth shows no directional properties which are attributed to arrangement and geometrical properties of hydrogen terminated carbon bonds at the surface of (1 0 0) oriented (2 × 1) reconstructed diamond.     

Conformational analysis of 3‐methyl‐3‐silathiane and 3‐fluoro‐3‐methyl‐3‐silathiane

The conformational equilibria of 3‐methyl‐3‐silathiane 5 , 3‐fluoro‐3‐methyl‐3‐silathiane 6 and 1‐fluoro‐1‐methyl‐1‐silacyclohexane 7 have been studied using low temperature ¹³C NMR spectroscopy and theoretical calculations. The conformer ratio at 103 K was measured to be about 5 _ax: 5 _eq = 15:85, 6 _ax: 6 _eq = 50:50 and 7 _ax: 7 _eq = 25:75. The equatorial preference of the methyl group in 5 (0.35 kcal mol^?1) is much less than in 3‐methylthiane 9 (1.40 kcal mol^?1) but somewhat greater than in 1‐methyl‐1‐silacyclohexane 1 (0.23 kcal mol^?1). Compounds 5–7 have low barriers to ring inversion: 5.65 (ax → eq) and 6.0 (eq → ax) kcal mol^?1 ( 5 ), 4.6 ( 6 ), 5.1 (Me_ax → Me_eq) and 5.4 (Me_eq → Me_ax) kcal mol^?1 ( 7 ). Steric effects cannot explain the observed conformational preferences, like equal population of the two conformers of 6 , or different conformer ratio for 5 and 7 . Actually, by employing the NBO analysis, in particular, considering the second order perturbation energies, vicinal stereoelectronic interactions between the Si–X and adjacent C–H, C–S, and C–C bonds proved responsible. Copyright © 2010 John Wiley & Sons, Ltd.     

High resolution X-ray photoelectron spectroscopy study on initial oxidation of 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface

An initial oxidation dynamics of 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface has been studied using high resolution X-ray photoelectron spectroscopy and supersonic molecular beams. Clean 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface was exposed to oxygen molecules with translational energy of 0.5 eV at 300 K. In the first step of initial oxidation, oxygen molecules are immediately dissociated and atomic oxygens are inserted into Si-Si back bonds to form stable oxide species. At this stage, drastic increase in growth rate of stable oxide species by heating molecular beam source to 1400 K was found. We concluded that this increase in growth rate of stable oxide is mainly caused by molecular vibrational excitation. It suggests that the dissociation barrier is located in the exit channel on potential energy hypersurface. A metastable molecular oxygen species was found to be adsorbed on a Si-adatom that has two oxygen atoms inserted into the back bonds. The adsorption of the metastable species is neither enhanced nor suppressed by molecular vibrational excitation.     

Synthesis and X‐ray structures of unexpected 2‐O‐(5‐deoxy‐1,2‐O‐isopropylidene‐α‐D‐glucofuranos‐5‐yloxy)quinoxalines

Reaction of 3‐methyl‐2(1H)‐quinoxalinone ( 4) and 2(1H)‐quinoxalinone ( 5) with 5,6‐anhydro‐1,2‐O‐isopropylidene‐ α‐D ‐glucofuranose 6 gives the unexpected O‐glucoquinoxalines derivatives by the intermediary novel intramolecular rearrangement of 5,6‐anhydro‐1,2‐O‐isopropylidene‐α‐D ‐glucofuranose to the corresponding 3,6‐anhydro form. The obtained O‐glucoquinoxalines 7,8 were identified by NMR spectroscopy. The X‐ray crystal structures have been determined at room temperature. Moreover, a solid–solid phase transition has been detected at 198.9 K for O‐glucoquinoxalines 7 and the structure of the low‐temperature phase has been solved at 188 K. Copyright © 2009 John Wiley & Sons, Ltd.