All solid-state continuous-wave Nd:YAG laser at 1319 and 659.5 nm under direct 885 nm pumping

The continuous-wave high efficiency laser emission of Nd:YAG at the fundamental wavelength of 1319 nm and its 659.5-nm second harmonic obtained by intracavity frequency doubling with an LBO nonlinear crystal is investigated under pumping by diode laser at 885 nm (on the ⁴ F _3/2 → ⁴ I _13/2 transition). An end-pumped Nd:YAG crystal yielded 9.1 W at 1319 nm of continuous-wave output power for 18.2 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power is 0.55. Furthermore, 5.2 W 659.5 nm red light is acquired by frequency doubling, resulting in an optical-to-optical efficiency with respect to the absorbed pump power of 0.286. Comparative results obtained for the pump with diode laser at 808 nm (on the ⁴ F _5/2 → ⁴ I _13/2 transition) are given in order to prove the advantages of the 885 nm wavelength pumping.     

CW red light generated by intracavity frequency doubling of a 1329 nm Nd:CNGG laser with LBO

We report an efficient laser emission on the 1329 nm ⁴ F _3/2 to ⁴ I _13/2 transition in Nd:CNGG under the pump with diode laser at 885 nm. Continuous wave (CW) 3.37 W output power at 1329 nm is obtained under 17.4 W of incident pump power; the slope efficiency with respect to the incident pump power was 36.2%. Moreover, intracavity frequency doubling with LiB₃O₅ (LBO) nonlinear crystal yielded 822 mW of red light at 665 nm. An optical-to-optical efficiency with respect to the incident pump power was 4.7%.     

Efficiency intracavity frequency-doubled Nd:CNGG-LBO green laser at 530.5 nm under direct 885 nm pumping into the emitting level

We report an efficient laser emission on the 1061 nm ⁴ F _3/2 to ⁴ I _11/2 transition in Nd:CNGG under the pump with diode laser at 885 nm. Continuous wave (CW) 5.4 W output power at 1061 nm is obtained under 17.4 W of incident pump power; the slope efficiency with respect to the incident pump power was 36.2%. Moreover, intracavity frequency doubling with LiB₃O₅ (LBO) nonlinear crystal yielded 1.75 W of green light at 530.5 nm. An optical-to-optical efficiency with respect to the incident pump power was 10.1%.     

Diode-pumped continuous-wave Nd:YLF laser at 1313 nm

We present an efficiency Nd:LiYF₄ (Nd:YLF) laser operating at 1313 nm pumped directly into the emitting level ⁴ F _3/2. At the incident pump power of 10.3 W, as high as 3.1 W of continuous-wave output power at 1313 nm is achieved. The slope efficiency with respect to the incident pump power was 36.1%. To the best of our knowledge, this is the first demonstration of such a laser system. Comparative results obtained for the pump with diode laser at 806 nm, into the highly absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

Dual-Wavelength and Passively Q-Switched Nd :GdVO4 Lasers Operated at 1.34 μm Under 880 nm Diode Pumping

We report continuous-wave (CW) and passively Q-switched Nd :GdVO₄ lasers on ⁴F_3/2 → ⁴I_13/2 transition directly pumped by an 880 nm diode laser. A widely investigated Nd :GdVO₄ laser at about 1341 nm is operated with a maximum output power of 5.23 W and a slope efficiency of about 30.6%. Using an etalon for wavelength selection, we realize laser emission at about 1344 nm, for the first time to our knowledge, in a Nd :GdVO₄ laser, with a maximum output power of 4.19 W and a slope efficiency of 20.1%. Moreover, we achieve simultaneous dual-wavelength lasing at 1341 and 1344 nm with a maximum output power of 2.27 W and a slope efficiency of 13.5%, respectively. Using V³⁺ :YAG as a saturable absorber, stable Q switching is obtained at about 1341 nm with a maximum average output power of 1.15 W. The pulse width is 52.8 ns at a repetition rate of 279.8 kHz.

     

Efficiency intracavity frequency-doubled Nd:Y<Subscript>0.36</Subscript>Gd<Subscript>0.64</Subscript>VO<Subscript>4</Subscript>-LBO green laser at 532 nm with direct pumping

We report an efficient laser emission on the 1064 nm ⁴ F _3/2 to ⁴ I _11/2 transition in mixed vanadate crystal Nd:Y_0.36Gd_0.64VO₄ under the pump with diode laser at 880 nm. Continuous wave (CW) 10.7 W output power at 1064 nm is obtained under 17.8 W of incident pump power; the slope efficiency with respect to the incident pump power was 71.2%. Moreover, intracavity frequency doubling with LiB₃O₅ (LBO) nonlinear crystal yielded 4.6 W of green light at 532 nm. An optical-to-optical efficiency with respect to the incident pump power was 25.8%.     

Diode pumped Nd:GSAG and Nd:YGG laser at 942 and 935 nm

Two new Nd³⁺ doped crystals show laser activity between the ⁴F_3/2 and ⁴I_9/2 levels. Diode pumped emission of Nd:GSAG at 942 nm wavelength with 950 mW output power and 14% optical to optical efficiency as well as laser emission of Nd:YGG at 935 nm with 700 mW output power and 11% efficiency have been obtained. These wavelengths are useful for water vapour absorption measurements.     

Efficient intracavity frequency-doubled Nd:YLiF<Subscript>4</Subscript>-LiB<Subscript>3</Subscript>O<Subscript>6</Subscript> red laser emission under diode pumping into the emitting level

We report for the first time (to our knowledge) an efficient compact red laser at 660.5 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode direct pumped Nd:YLiF₄ (Nd:YLF) laser on the ⁴ F _3/2 → ⁴ I _13/2 transition at 1321 nm. A LiB₃O₆ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an absorbed pump power of 16.2 W, as high as 1.5 W of continuous wave output power at 660.5 nm is achieved with 10-mm-long LBO. The optical-to-optical conversion efficiency is up to 9.3%. Comparative results obtained for the pump with diode laser at 806 nm, into the highly-absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

Infrared laser emission in two-photon pumped sodium vapour

We report infrared laser emission in the region of 3 to 5 μm from sodium vapour optically pumped by a pulsed dye laser with wavelengths ranging from 585 to 610nm. Twophoton excitation processes are believed to be responsible for the primary excitation. Both molecular transitions (4 to 5 μm) between high lying states, and atomic transitions (5² S _1/2−4² P _3/2,1/2 at 3.41 μm) have been identified.     

Diode-pumped short pulse passively Q-switched 912 nm Nd:GdVO<Subscript>4</Subscript>/Cr:YAG laser at high repetition rate operation

A diode-end-pumped passively Q-switched 912 nm Nd:GdVO₄/Cr:YAG laser is demonstrated for the first time. In a concave-piano cavity, pulsed 912 nm laser performance is investigated using two kinds of Cr:YAG crystal with different unsaturated transmission (T _U) of 95% and 90% at 912 nm as the saturable absorbers. When the T _U = 90% Cr:YAG is used, as much as 2.6 W average output power for short pulsed 912 nm laser is achieved at an absorbed pump power of 34.0 W, corresponding to an optical efficiency of 7.6% and a slope efficiency of 20.3%. Moreover, 10.5 ns duration pulses and up to 2.3 kW peak power is obtained at the repetition rate around 81.6 kHz.     

Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices

Structures containing silicon nanocrystals (nc-Si) are very promising for Si-based light-emitting devices. Using a technology compatible with that of silicon, a broader wavelength range of the emitted photoluminescence (PL) was obtained with nc-Si/SiO₂ multilayer structures. The main characteristic of these structures is that both layers are light emitters. In this study we report results on a series of nc-Si/SiO₂ multilayer periods deposited on 200 nm thermal oxide SiO₂/Si substrate. Each period contains around 10 nm silicon thin films obtained by low-pressure chemical vapour deposition at T=625°C and 100 nmSiO₂ obtained by atmospheric pressure chemical vapour deposition T=400°C. Optical and microstructural properties of the multilayer structures have been studied by spectroscopic ellipsometry (using the Bruggemann effective medium approximation model for multilayer and multicomponent films), FTIR and UV–visible reflectance spectroscopy. IR spectroscopy revealed the presence of SiO_x structural entities in each nc-Si/SiO₂ interface. Investigation of the PL spectra (using continuous wave-CW 325 nm and pulsed 266 nm laser excitation) has shown several peaks at 1.7, 2, 2.3, 2.7, 3.2 and 3.7 eV, associated with the PL centres in SiO₂, nc-Si and Si–SiO₂ interface. Their contribution to the PL spectra depends on the number of layers in the stack.     

LD side-pumped 41 W high beam quality acousto-optical Q-switched single-rod Nd:YAG laser

We report a LD side-pumped high beam quality (M _x ² = 1.20 and M _y ² = 1.19) acousto-optic (AO) Q-switched single-rod Nd:YAG laser with a TEM₀₀-mode dynamic stable cavity. At the pump power of 600 W, 41 W TEM₀₀-mode 1064 nm laser was achieved with electro-optical conversion efficiency of 7%. The repetition rate and pulse width were 30 kHz and 102 ns, respectively with pulse energy of 1.4 mJ and peak power of 13 kW. Up to 24 W of 532 nm green laser was generated by external frequency doubling, corresponding to 59% optical conversion efficiency.     

885 nm LD end-pumped 22.7 W high beam quality electro-optical Q-switched Nd:YAG laser

We report an 885 nm laser diode (LD) end-pumped high beam quality (M _x ² = 1.322, M _y ² = 1.235) electro-optical Q-switched Nd:YAG laser with TEM₀₀-mode output for the first time. At the absorbed pump power of 59.5 W, a 22.7 W 1064 nm laser was achieved at 10 kHz repetition rate with optical-to-optical efficiency of 38.1%. The maximum pulse energy and shortest pulse width were 5.1 mJ and 14.5 ns at 2 kHz repetition rate, and the calculated peak power was 352 kW.     

Efficient Nd:Y0.5Gd0.5VO4-KTiOPO4 green laser under diode pumping into the emitting level 4F3/2

We report a green laser at 532 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1064 nm Nd:Y_0.5Gd_0.5VO₄ laser under diode pumping into the emitting level ⁴ F _3/2. A KTiOPO₄ (KTP) crystal, cut for critical type-II phase matching at room temperature is used for second harmonic generation (SHG) of the laser. At an incident pump power of 17.8 W, as high as 4.21 W of cw output power at 532 nm is achieved. The optical-to-optical conversion efficiency is up to 23.6%, and the fluctuation of the green output power was better than 2.8% in the given 30 min.     

Characteristics of a copper bromide laser with flowing Ne-HBr buffer gas

The operating characteristics of a small self-heated copper halide laser (=510.6 and 578.2 nm) are described, where the copper lasant atoms are produced by electric-discharge dissociation of copper bromide that is generatedin situ by flowing Ne-HBr gas mixture over copper pieces in the laser tube. The excitation technique permits fast startup (<1 min to laser oscillation from cold), and rapid and simple control of the CuBr vapour pressure, simultaneously introducing H₂ to increase the efficiency. Specific laser output energies and average powers of 12J cm^–3 and 195 mW cm^–3, respectively, are almost a factor of 2 higher than those previously reported in the literature for multi-kilohertz copper bromide lasers. A maximum power of 7.8 W was obtained from the 40 cm³ active region. At its highest efficiency (0.8%) the laser produced 6.1 W.     

Continuous-wave Nd:GdVO<Subscript>4</Subscript>/LBO laser at 541.5 nm under diode pumping into the emitting level

We report a green laser at 541.5 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1083 nm Nd:GdVO₄ laser under 880 nm diode pumping into the emitting level ⁴ F _3/2. A LiB₃O₅ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 2.52 W of cw output power at 541.5 nm is achieved. The optical-to-optical conversion efficiency is up to 14.2%, and the fluctuation of the green output power was better than 3.6% in the given 30 min.     

5.3 W deep-blue light generation by intra-cavity frequency doubling of Nd:GdVO4

We report the efficient compacted deep-blue laser at 456 nm generation by intra-cavity frequency doubling of a continuous-wave (cw) laser operation of a diode-pumped Nd:GdVO₄ laser on the ⁴ F _3/2→⁴ I _9/2 transition at 912 nm. The different long LiB₃O₅ (LBO) crystals, cut for critical type I phase matching at room temperature, are used for second harmonic generation (shg) of the laser. At an incident pump power of 30 W, up to 5.3 W of cw output power at 456 nm is achieved with 15-mm-long LBO (3.8 W with 10 mm-long LBO). The conversion efficiency is 17.7% from pump diode input to second harmonic wave output.PACS 42.70.Hj; 42.55.Xi; 42.65.Ky     

All solid-state CW Nd:GdVO<Subscript>4</Subscript>-GdCOB laser at 670 nm

We report the efficient compact red laser at 670 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode pumped Nd:GdVO₄ laser on the ⁴ F _3/2 → ⁴ I _13/2 transition at 1340 nm. An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 18.2 W, as high as 1.32 W of continuous wave (CW) output power at 670 nm is achieved with 15-mm-long GdCOB. The optical-to-optical conversion efficiency is up to 7.3%, and the fluctuation of the red output power was better than 3.5% in the given 30 min.     

Continuous wave Nd:LuVO<Subscript>4</Subscript>-LBO blue laser under direct 888 nm diode laser pumping

We report the efficient blue laser at 458 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a diode pumped Nd:LuVO₄ laser on the ⁴ F _3/2 → ⁴ I _9/2 transition at 916 nm. An LiB₃O₅ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 18.2 W, as high as 1.73 W of continuous wave (CW) output power at 458 nm is achieved. The optical-to-optical conversion efficiency is up to 9.5%, and the fluctuation of the red output power was better than 3.5% in the given 30 min.     

A high efficiency Ho:YAlO<Subscript>3</Subscript> laser pumped by Tm:YLF laser with a Volume Bragg Grating

We report a CW Ho:YAlO₃ (Ho:YAP) laser at room temperature pumped by a Tm:YLF laser with a Volume Bragg Grating (VBG) instead of the conventional mirror. The Ho:YAP laser operated at 2117.9 nm with output power 9.12 W. The optical-to-optical conversion efficiency is 60.4% and slope efficiency is 71.2%. The Ho:YAP output wavelength is centered at 2117.9 nm with bandwidth of about 1 nm. The beam quality factor is M ² ∼ 1.29 measured by the traveling knife-edge method.