Structure and optical properties of ZnSe/SiO<Subscript>2</Subscript> layered nanocomposites

Structure and optical properties of ZnSe/SiO₂ layered nanocomposites obtained using microwave magnetron sputtering have been studied. The nanocomposites are X-ray amorphous at relatively small thicknesses of the zinc selenide layers. When the thickness of the zinc selenide layers exceeds 20 Å, ZnSe/SiO₂ films contain SiO₂ amorphous phase and zinc selenide cubic nanocrystallites. It has been demonstrated that the thickness of zinc selenide layers affects the microstresses, refractive index, and band gap.     

Characterizing ZnS x Se(1 − x) films of various compositions via EXAFS spectroscopy

ZnS _x Se_{(1 ? x)} (x = 0.36, 0.68, and 0.73) films of various compositions are prepared by the thermal deposition of a mixture of zinc sulfide and zinc selenide powders in ultrahigh vacuum. It is shown that the produced films and the source materials are close in chemical composition. The crystal structure of the films is studied via X-ray diffraction. The local atomic environment of selenium and zinc atoms is studied by means of EXAFS spectroscopy.     

Use of modified chemical route for ZnSe nanocrystalline thin films growth: Study on surface morphology and physical properties

The zinc selenide thin films have been deposited using modified chemical bath deposition (M-CBD) method. Zinc acetate and sodium selenosulphate were used as Zn²⁺ and Se²⁻ ion sources, respectively. The preparative parameters such as concentration, pH, number of deposition cycles have been optimized in order to deposit ZnSe thin films. The as-deposited ZnSe thin films are specularly reflective and faint yellowish in color. The as-deposited ZnSe films are annealed in an air atmosphere at 473 K for 2 h. The films are characterized using structural, morphological, compositional, optical and electrical properties.     

Effect of mixed cations in synergizing the performance characteristics of PVA-based polymer electrolytes for novel category Zn/AgO polymer batteries—a preliminary study

Thin films of polymer electrolytes comprising of PVA and KOH (A) with and without the addition of zinc salts, viz., zinc acetate (B) and zinc triflate (C) as mixed cations were prepared via. solution casting method. The thermal stability and ionic conductivity of PVA–KOH solid polymer electrolyte (A) were improved by the partial substitution of KOH with zinc salts. Among the two salts, zinc triflate was found to improve both the physical as well as electrochemical properties of the PVA–KOH films more significantly than zinc acetate. An attempt to optimize the ratio of various components of polymer electrolytes, viz., polymer: KOH: zinc salt was also made, based on the dimensional stability and ionic conductivity values. Finally, the select category polymer film containing PVA–KOH–zinc triflate (C) in an optimum ratio of 40:35:25 was deployed in coin cell fabrication and subjected to charge–discharge studies with a view to demonstrate the possible electrochemical reversibility characteristics. Based on the encouraging results obtained from the cycling study, C type films [PVA–KOH–zinc triflate] qualify themselves as potential polymer electrolytes for use in rechargeable Zn/AgO polymer batteries.     

Schottky barrier UV photodetectors based on zinc selenide

The results of investigations of the properties of UV photodetectors based on zinc selenide are presented. The influence of the parameters of the diode structure, the temperature, and the voltage on the main characteristics and parameters of the photodetectors is considered. Zh. Tekh. Fiz. 68, 123–125 (September 1998)     

Effect of deposition parameters on structural, optical and electrical properties of nanocrystalline ZnSe thin films

This paper presents the chemical bath deposition of zinc selenide (n-ZnSe) nanocrystalline thin films on non-conducting glass substrates, in an aqueous alkaline medium using sodium selenosulphate as Se²⁻ ion source. The X-ray diffraction studies show that the deposited ZnSe material is nanocrystalline with a mixture of hexagonal and cubic phase. The direct optical band gap ‘E_g’ for the as-deposited n-ZnSe films is found to be 3.5 eV. TEM studies show that the ZnSe nanocrystals (NCs) are spherical in shape. Formation of ZnSe has been confirmed with the help of infrared (IR) spectroscopy by observing bands corresponding to the multiphonon absorption. We demonstrate the effect of the deposition temperature and reactant concentration on the structural, optical and electrical properties of ZnSe films.     

Effect of thermal annealing on the structure of ZnSe/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> nanocomposite films

The ZnSe/Al₂O₃ nanocomposite films synthesized by laser evaporation followed by heat treatment are studied. X-ray diffraction and electron-microscopic investigations of the as-deposited films demonstrate the presence of ZnSe crystallites in an Al₂O₃ amorphous matrix. Annealing changes the structures of ZnSe and Al₂O₃, increases the ZnSe crystallite size, and causes the appearance of the ZnSeO₄ phase. The presence of aluminum oxide layers decreases the phase transformation temperature of zinc selenide.     

Electrophysical properties of doped epitaxial CdSe films

The electrophysical properties of epitaxial films of cadmium selenide doped with zinc or gallium are investigated. It is shown that in doped films intercrystalline barriers are absent, and the mechanism of electron scattering is close to the scattering mechanism in single crystals. It is suggested that the removal of the intercrystalline energy barrier is due to localization of part of the activator at intercrystallite boundaries and neutralization of acceptor states in neutral complexes. The difference between the doping effect of zinc and gallium is shown.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 52–56, March, 1977.     

Aqueous Synthesis of Water-Soluble Citrate-Modified Cadmium Selenide/Cadmium Sulfide/Zinc Sulfide Quantum Dots

Water-soluble cadmium selenide/cadmium sulfide/zinc sulfide core/shell/shell quantum dots were synthesized in aqueous solution using trisodium citrate as modifier. The crystal structure, morphology, component, and spectral properties of cadmium selenide/cadmium sulfide/zinc sulfide core/shell/shell quantum dots were characterized by X-ray power diffraction, transmission electron microscope, energy dispersive X-ray analysis, infrared spectrum, ultraviolet–visible absorption spectrum, and fluorescence spectrum. The results show that the spherical citrate-modified cadmium selenide/cadmium sulfide/zinc sulfide core/shell/shell quantum dots with diameter around 3.6 nm belong to the cubic zinc blende structure. The citrate-modified cadmium selenide/cadmium sulfide/zinc sulfide core/shell/shell quantum dots show a narrow, symmetric, and strong fluorescence emission spectrum band with narrow full width at half maximum of 53 nm, and the fluorescence quantum yield can reach up to 37.3%. The high-quality citrate-modified cadmium selenide/cadmium sulfide/zinc sulfide core/shell/shell quantum dots with good fluorescence properties have potential for application in biological fluorescence analysis.     

Pulsed laser ablation of zinc selenide in nitrogen ambience: Formation of zinc nitride films

Zinc nitride (Zn₃N₂) thin films are prepared using pulsed laser deposition (PLD) from zinc selenide (ZnSe) target at different nitrogen ambient pressures viz. 1, 3, 5, 7 and 10 Pa. The films prepared with nitrogen pressures 1 and 3 Pa are amorphous in nature, whereas the films prepared at 5, 7 and 10 Pa exhibit the presence of cubic bixbyite Zn₃N₂ structure with lattice parameter very close to bulk of Zn₃N₂. The particle size calculated by Debye Scherrer's formula is in the nano regime. Surface morphology of the films is studied by SEM and AFM analysis. Optical parameters such as band gap, refractive index and porosity of the films are calculated. Moreover, the present study confers an outlook about how do various factors such as substrate temperature, reactive supplementing gas and laser-target interaction influence the film developing process during pulsed lased deposition.     

Radiation damage and decay characteristics of zinc selenide emission bands and their equivalence to zinc sulphide emission bands

Irradiation of zinc selenide at ～ 20°K with electrons capable of displacing zinc atoms results in the production of cathodoluminescence emission bands at 610 and 630 nm. Enhancement of the 630 nm emission band by electron damage requires the presence of copper in the samples. These emissions have been shown to give a peak energy shift to lower energies after excitation, as is characteristic of donor-acceptor pair recombination. It is concluded that the 610 and 630 nm emission bands of zinc selenide are equivalent to the self-activated and copper green emission bands of zinc sulphide. The 530 nm emission band of zinc selenide is not sensitive to electron damage, shows no time shift and is thought to be equivalent to the copper blue emission of zinc sulphide.     

Diagnostic study of the roughness surface effect of zirconium on the third-order nonlinear-optical properties of thin films based on zinc oxide nanomaterials

Zinc oxide (ZnO) and zirconium doped zinc oxide (ZnO:Zr) thin films were deposited by reactive chemical pulverization spray pyrolysis technique on heated glass substrates at 500 °C using zinc and zirconium chlorides as precursors. Effects of zirconium doping agent and surface roughness on the nonlinear optical properties were investigated in detail using atomic force microscopy (AFM) and third harmonic generation (THG) technique. The best value of nonlinear optical susceptibility χ⁽³⁾ was obtained from the doped films with less roughness. A strong third order nonlinear optical susceptibility χ⁽³⁾ = 20.12 × 10⁻¹² (esu) of the studied films was found for the 3% doped sample.     

Novel Two-Step Approach for the Synthesis of Cadmium Selenide/Zinc Sulfide Core/Shell Nanocomposites with Precursor Injection Technique

This work describes the synthesis of cadmium selenide/zinc sulfide core/shell nanoparticles from the cadmium oxide precursor through a convenient, two-step approach. This modified novel synthesis procedure for cadmium selenide/zinc sulfide nanoparticles in trioctylphosphine oxide and trioctyl phosphine provides better control over growth dynamics. The outer zinc sulfide shell provides efficient confinement of electron and hole wave functions inside the nanocrystals as well as high photochemical stability. The materials have been characterized using a range of optical and structural techniques. The high resolution transmission electron microscope micrographs of the cadmium selenide/zinc sulfide core/shell nanoparticles show well-defined spherical particles with an increase in diameter as compared to the parent cadmium selenide material. Thus, the present simulation and its extension can give insight to the understanding of the formation of core/shell or other heterostructures in different kinds of self-assembled aggregates.     

Component effects on the vanadium oxide thin films phase transition character phenomenon observed

We present what is, to the best of our knowledge, how the components affect the phase transition character of the vanadium oxide thin films. The vanadium oxide thin films are prepared on zinc selenide by a DC magnet sputtering method for the first time; the components are achieved by the x-ray photoelectron spectroscopy (XPS). The films are annealed to tune their components. A spectral transmittance study has been made from 2.5 to 25.0 μm. We can see that, except for doping, different components can change the phase transition characters of the films. The components can affect the phase transition temperature, hysteresis cycle, and the transmittance.     

OMVPE硒化锌薄膜的生长与激光特性

本文叙述了在GaAs衬底上用有机金属气相外延(OMVPE)法生长单晶ZnSe薄膜的方法。研究了生长温度,硒锌比对外延膜光电性能的影响。发现生长温度在285℃可以得到表面光亮、结晶性好、低阻、高迁移率、深中心浓度低的外延层。以光泵浦作激发研究了OMVPE ZnSe薄膜的受激发射性质并测量其光学增益。利用ZnSe/GaAs的自然解理面形成的光反馈腔制成了激光器。该激光器的工作温度可以延续到150K。     

Properties of Hg1−xZnxSe (0.09 ⩽ x ⩽ 1.0) thin films prepared by flash evaporation technique

Flash evaporated mercury zinc selenide films are observed to grow as single phase ternary alloys of the type Hg_1−xZn_xSe in the composition range 0.09 ⩽ x ⩽ 1.0, with a f.c.c./sphalerite structure on substrates maintained at T_s between 30°C and 175°C. The grain size is observed to increase with increase in T_s for all compositions. The films are observed to have a direct optical band gap which increases from 0.01 to 2.60 eV as the Zn concentration x is varied between 0.09 and 1.0. The band gap V_scomposition shows a bowing, typical of pseudobinary solid solutions. Zn rich films were observed to be p-type whereas Hg-rich films were n-type. Room temperature resistivity was observed to increase with Zn concentration x, which can be attributed to the increase in the band gap of the semiconductors. Higher resistivity in films deposited at high substrate temperatures is due to the decrease in contribution to conduction from the highly conducting grain boundaries.     

Remote Measurement of Motorcycle Exhaust Using Fourier Transform Infrared System

Abstract

We have explored the basic theory and quantitative methods for the measurement of motorcycle exhaust using a Fourier transform infrared interferometer system. Remote sensing direct measurements were made and the species carbon monoxide, carbon dioxide, nonmethane paraffinic carbon(CH^x) and unburned additional harmful species in motorcycle exhaust were determined. Typical concentrations observed in absorption for carbon monoxide, carbon dioxide and nonmethane paraffinic carbon were about 1.11%, 1.91%, 0.54% respectively. Furthemore, this paper describes the remote sensing Fourier transform infrared spectrometer system. The system covers the infrared spectral region from 700 to 6000 cin^?1 at a maxim resolution of 0.06 cm^?1 for beamsplitter of gerrniuiirun coated zinc selenide and receiver telescope with zinc selriide leis. For air multipollutant monitoring the analytica1 methods have the potential and become important. The remote measurements usirig the Fourier transform inf raid spectroscopy could become niore practical.     

Structural,morphological, composition and optical properties of undoped zinc oxide thin films prepared by spray pyrolysis method: effect of solution concentrations

Abstract

The aim of this paper is the study of transparent undoped zinc oxide thin films obtained by spray pyrolysis technique on glass substrates heated at 350?°C from 0.1 to 0.4?mol solution concentrations using zinc acetate dehydrate as precursor. The X-ray diffraction patterns and Raman spectrometry with respect to Urbach energy and wurtzite structure, show that the maximum value of the high frequency intensity E₂ and the optimal value of the optical gap are obtained at 0.2?mol concentration. Furthermore, an appropriate transparency is obtained and that makes these films suitable for photovoltaic windows layer cells.     

Effects of deposition temperature on the surface roughness and the nonlinear optical susceptibility of sprayed deposited ZnO:Zr thin films

Zirconium doped zinc oxide thin films were deposited by reactive chemical pulverization spray pyrolysis technique on heated glass substrates at 400 °C, 450 °C and 500 °C using zinc and zirconium chlorides as precursors. The effect of zirconium dopant and surface roughness on the nonlinear optical properties was investigated using atomic force microscopy (AFM) and third harmonic generation (THG). The best value of susceptibility χ⁽³⁾ was obtained from the doped films with less roughness. A strong third order nonlinear optical susceptibility χ⁽³⁾ = 20.49 × 10⁻¹² (esu) of the studied films was found for the 5% doped sample at 450 °C.     

Novel chemical synthetic route and characterization of zinc selenide thin films

Zinc selenide (ZnSe) thin film have been deposited using chemical bath method on non-conducting glass substrate in a tartarate bath containing zinc sulfate, ammonia, hydrazine hydrate, sodium selenosulfate in an aqueous alkaline medium at 333 K. The deposition parameter of the ZnSe thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption, electrical measurements, atomic absorption spectroscopy (AAS). The ZnSe thin layers grown with polycrystalline zinc blende system along with some amorphous phase present in ZnSe film. The direct optical band gap ‘E_g’ for the film was found to be 2.81 eV and electrical conductivity in the order of 10⁻⁸(Ω cm)⁻¹ with n-type conduction mechanism.