Coalescence of nanobranches: a new growth mechanism for single crystal nanobelts

We report a fundamentally new growth mechanism for single crystalline nanobelts, namely, the growth and coalescence of nanobranches. The growth process of the nanobelts includes four typical steps such as nucleation and growth of the stem, nucleation and growth of the nanobranches at the expense of the stem, widening and geometrical coalescence of the nanobranches, and finally having nanobelts with perfect structure. The unique widening growth process of the nanobranches is apparently driven by the lattice distortion within the surface area of the stem. The continuous geometrical coalescence between the neighboring branches leads to the formation of the beltlike structures.     

Catalyst-assisted vapor-liquid-solid growth of single-crystal Ga2O3 nanobelts

Mass production of quasi-one-dimensional gallium oxide nanobelts is accomplished through graphite-thermal reduction of a mixture of gallium oxide powders and SnO2 nanopowders under controlled experimental conditions. Sn nanoparticles are located at or close to the tips of the nanobelts and served as the catalyst for the nanobelt growth by a vapor-liquid-solid mechanism. The morphology and microstructure of the nanobelts were characterized by scanning electron microscopy and high-resolution transmission electron microscopy. The Ga2O3 nanobelts grow along the [104] direction, the widths ranged from several tens to several hundreds of nanometers, and the lengths ranged from several tens to several hundreds of micrometers. The growth of Ga2O3 nanobelts is initiated by Sn nanoparticles via a catalyst-assisted vapor-liquid-solid process, which makes it possible to control the sizes of Ga2O3 nanobelts.     

Growth of SnO nanobelts and dendrites by a self-catalytic VLS process

This article reports on the growth of SnO nanobelts and dendrites by a carbothermal reduction process. The materials were synthesized in a sealed tube furnace at 1210 degrees C and at 1260 degrees C for 2 h, in a dynamic nitrogen atmosphere of 40 sccm. After synthesis, gray-black materials were collected downstream in the tube and the samples were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDX). The results showed that the gray-black materials were composed of nanobelts, which grew in the [110] direction of the orthorhombic structure of SnO. Some of the belts also presented dendritic growth. The dendrites grew in the (110) planes of the SnO structure, and no defects were observed at the junction between the nanobelts and the dendrites. A self-catalytic vapor-liquid-solid (VLS) process was proposed to explain the growth of the SnO nanobelts and dendrites.     

Single-crystalline CuO nanobelts fabricated by a convenient route

A reverse micelle-assisted route for preparing CuO nanobelts from precursor Cu(OH)2- 4 is reported. The reverse micelles were used as microreactors, which led to anisotropic growth crystals during a simple solvothermal process. The formation conditions of the CuO nanobelts were also studied.     

Chloride Assisted Growth of Aluminum Nitride Nanobelts and Their Enhanced Dielectric Responses

Aluminum nitride (AlN) nanobelts were successfully synthesized in high yield through a chloride assisted vapor-solid process. X-ray diffraction, transmission electron microscopy, and selected area electronic diffraction demonstrate that the as-prepared nanobelts are pure, structurally uniform and single crystalline, and can be indexed to hexagonal wurtzite structure. The micro observations show that there exist no defects in the obtained nanobelts. The growth direction of the nanobelts is along 0001. The frequency spectra of the relative dielectric constant and of the dielectric loss were measured in the frequency range of 50 Hz to 5 MHz. Analysis of these spectra indicates that the interface in samples has great influence on the dielectric behavior of samples. As compared with AlN micropowders, AlN nanobelts have much higher relative dielectric constant, especially at low frequencies at room temperature.     

Sn掺杂ZnO半导体纳米带的制备、结构和性能

在无催化剂的条件下, 利用碳热还原反应气相沉积法制备出了高产率单晶Sn掺杂ZnO纳米带. XRD和TEM研究表明纳米带为结晶完好的纤锌矿结构, 生长方向沿[0001], EDS分析表明纳米带中Sn元素含量约为1.9%. 室温光致发光谱(PL)显示掺锡氧化锌纳米带存在强的绿光发射峰和较弱的紫外发射峰, 谱峰峰位中心分别位于494.8 nm和398.4 nm处, 并对发光机制进行了分析. 这种掺杂纳米带有望作为理想的结构单元应用于纳米尺度光电器件领域.     

Controlled synthesis of gold nanobelts and nanocombs in aqueous mixed surfactant solutions

Well-defined gold nanobelts as well as unique gold nanocombs made of nanobelts were readily synthesized by the reduction of HAuCl4 with ascorbic acid in aqueous mixed solutions of the cationic surfactant cetyltrimethylammonium bromide (CTAB) and the anionic surfactant sodium dodecylsulfonate (SDSn). Single-crystalline gold nanobelts grown along the <110> and <211> directions were prepared in mixed CTAB-SDSn solutions at 4 and 27 degrees C, respectively. Furthermore, single-crystalline gold nanocombs consisting of a <110>-oriented stem nanobelt and numerous <211>-oriented nanobelts grown perpendicularly on one side of the stem were fabricated by a two-step process with temperature changing from 4 to 27 degrees C. It was proposed that the mixed cationic-anionic surfactants exerted a subtle control on the growth of gold nanocrystals in solution due to the cooperative effect of mixed surfactants. This synthetic strategy may open a new route for the mild fabrication and hierarchical assembly of metal nanobelts in solution. The obtained gold nanobelts showed good electrocatalytic activity toward the oxidation of methanol in alkaline solution; in particular, the electrode modified with the nanobelts obtained at 27 degrees C exhibited an electrocatalytic activity considerably higher than normal polycrystalline gold electrode. Moreover, the gold nanobelts were used as the surface-enhanced Raman scattering (SERS) substrate for detecting the enhanced Raman spectra of p-aminothiophenol (PATP) molecules, and the gold nanobelts obtained at 4 degrees C exhibited an unusual larger enhancement of the b2 modes relative to the a1 modes for the adsorbed PATP molecules.     

One-pot synthesis and self-assembly of copper phthalocyanine nanobelts through a water-chemical route

A water-chemical route to synthesize copper phthalocyanine (CuPC) is reported in this paper. The molecules were self-assembled into regular beta-CuPC single-crystal nanobelts simultaneously. The molecular structure of CuPC in the nanobelts was characterized by UV-vis absorption spectroscopy, MALDI-TOF-MS, and elemental analysis. The morphology and crystal phase of the nanobelts were investigated by electron microscopy and X-ray diffraction, respectively. Crucial factors for the formation of CuPC nanobelts were also investigated. The cooperative effect of the surfactant and copper powder was important for the formation of CuPC. The CuPC nanobelts were obtained through a self-assembly process. In addition, a phase transition process, which resulted in the formation of beta-CuPC single-crystal nanobelts, took place with prolonged time.     

Catalyst-nanostructure interfacial lattice mismatch in determining the shape of VLS grown nanowires and nanobelts: a case of Sn/ZnO

Vapor-liquid-solid (VLS) is a well-established process in catalyst-guided growth of nanowires. The catalyst particle is generally believed to be in liquid state during growth, and it is the site for adsorbing incoming molecules; the crystalline structure of the catalyst may not have any influence on the structure of the grown one-dimensional nanostructures. In this paper, using tin particle guided growth of ZnO nanostructures as a model system, we show that the interfacial region of the tin particle with the ZnO nanowire/nanobelt could be ordered (or partially crystalline) during the VLS growth, although the local growth temperature is much higher than the melting point of tin, and the crystallographic lattice structure at the interface is important in defining the structural characteristics of the grown nanowires and nanobelts. The interface prefers to take the least lattice mismatch; thus, the crystalline orientation of the tin particle may determine the growth direction and the side surfaces of the nanowires and nanobelts. This result may have important impact on the understanding of the physical chemical process in the VLS growth.     

Large-scale growth of millimeter-long single-crystalline ZnS nanobelts

Millimeter-long single-crystalline hexagonal ZnS nanobelts were grown on specific locations on a wafer scale. This is the first time that the millimeter-scale ZnS nanobelt has been synthesized. The longest nanobelts are about 3 mm. The as-grown nanobelts were characterized by means of field emission scanning electron microscopy, X-ray powder diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction. The results indicate that the ultra-long nanobelts are pure single-crystalline hexagonal ZnS. There are two kinds of ZnS nanobelts existing in the products. One is the nanobelts that have two smooth sides and grow along the [0 0 1] longitudinal direction, and the other is the nanobelts that have one smooth side and one saw-teeth-like side, namely nanosaws, and grow along the [2 1 0] longitudinal direction. A vapor-liquid-solid mechanism is suggested for the lengthwise growth of the ZnS nanobelts (nanosaws) and a vapor-solid mechanism for the side direction growth of the saw-teeth of the nanosaws.     

Solution-based synthesis of quaternary Cu-In-Zn-S nanobelts with tunable composition and band gap

We have demonstrated that quaternary Cu(x)In(x)Zn(2(1-x))S(2) nanobelts could be synthesized through a facile solution-based method. The composition and band gap of quaternary nanobelts can be tuned within the broad range by changing the relative ratio of precursors. The growth mechanism of quaternary nanobelts was deduced to be catalyst-assisted growth.     

高分子自组装Mn2O3花瓣状纳米带、纳米线的研究

通过控制热处理工艺条件, 利用Mn(CH3COO)2和具有特殊空间构型的聚乙烯醇(PVA), 在600 ℃合成了类花瓣状Mn2O3纳米带和纳米线结构. SEM, XRD表征分析证明Mn2O3纳米带结构为方铁锰矿晶型结构, 沿(222)方向择优生长. 分析了热处理工艺对一维纳米结构的影响机制. 初步探讨了Mn2O3一维纳米结构的生长机理.     

简易、可控制备硫化铅纳米带

以硝酸铅和硫代乙酰胺为前体,十二烷基苯磺酸钠（SDBS）扮演了前体和表面活性剂的双重角色,制备出硫化铅纳米带。 采用透射电子显微镜、X射线衍射和光致发光对所制备的纳米带进行了表征。 结果表明,中间产物PbSO4在水热条件下对PbS纳米带的进一步形成主要起到模板作用。 进一步考察了纳米带形成机理,结果表明,中间产物PbSO4对表面活性剂是有制约性的,而当改变中间产物保持条件不变的情况下,模板效应失控,只能得到不规则的微晶体。 实验结果表明,制备硫化铅纳米带反应速度较为缓慢,易于控制,为制备不同形貌纳米带提供了一种有效方法。     

High ethanol sensitivity of Palladium/TiO2 nanobelt surface heterostructures dominated by enlarged surface area and nano-Schottky junctions

TiO₂ nanobelts were prepared by the hydrothermal growth method. The surface of the nanobelts was coarsened by selective acid corrosion and functionalized with Pd catalyst particles. Three nanobelt samples (TiO₂ nanobelts, surface-coarsened TiO₂ nanobelts and Pd nanoparticle/TiO₂ nanobelt surface heterostructures) were configured as gas sensors and their sensing ability was measured. Both the surface-coarsened nanobelts and the Pd nanoparticle-decorated TiO₂ nanobelts exhibited dramatically improved sensitivity to ethanol vapor. Pd nanoparticle-decorated TiO₂ nanobelts with surface heterostructures exhibited the best sensitivity, selectivity, working temperature, response/recovery time, and reproducibility. The excellent ethanol sensing performance is attributed to the large surface area and enhancement by Schottky barrier-type junctions between the Pd nanoparticles and TiO₂ nanobelts.     

硼酸镁纳米带的制备、结构和生长机理

以晶态B和纳米MgO粉末为原料, 在1100 ℃含水的气氛下反应制备了新型准一维纳米材料硼酸镁纳米带. 采用多种表征方法, 如X射线衍射(XRD), 扫描电镜(SEM), 透射电镜(TEM), 能量色散谱仪(EDS)和傅立叶红外(FT-IR)等, 研究了产物的形貌和结构. 结果表明, 除了部分附着的Mg₂B₂O₅颗粒外, 产物主要为单晶的Mg₃B₂O₆纳米带. 其宽度在100～200 nm, 长度达到几十微米, 生长方向大致为[010]方向. 简要讨论了硼酸镁纳米带的生长机理和反应温度对产物的影响.     

氧化铟八面体、纳米带、锯齿状纳米线和纳米链的可控合成

在N₂/H₂O混合气流中将硅片上金覆盖的金属铟颗粒加热到800 ℃制备出了不同形貌的In₂O₃纳米结构, 在距铟源不同距离处依次得到In₂O₃的八面体、纳米带、锯齿状纳米线和纳米链. 采用拉曼光谱、扫描电镜、X射线衍射和透射电镜对产物进行了表征分析. 结果表明, 八面体、纳米带、锯齿状纳米线和纳米链均为立方相单晶结构的In₂O₃. 基于气-固和气-液-固生长机理详细分析了八面体、纳米带、锯齿状纳米线和纳米链的生长过程, 提出了不同形貌In₂O₃纳米结构的生长模式.     

图案化锥形氧化锌纳米带的原位热氧化法制备与发光性质

采用光刻技术制备出图案的锌膜,所得锌膜与纯氧在700℃氧化反应10 min,在锌膜的表面上原位生长出具有图案的锥形ZnO纳米带阵列,实现了ZnO纳米带生长位置的可控生长。锌膜上得到的锥形ZnO纳米带为单晶六方纤锌矿结构,长度在1～4μm,纳米带根部和顶部的宽度分别在300～700 nm和100～300 nm。提出了锥形ZnO纳米带的可能生长机理。在波长为300nm光的激发下,发现了锌膜上锥形ZnO纳米带具有发光峰位于395 nm弱的紫外光发光和510 nm强的蓝绿光发光,它们分别起源于ZnO宽带隙的激子发射以及表面上离子化氧空位中的电子与价带中光激发的空穴之间的复合。     

单晶CoV2O6·2H2O纳米带的合成及其电化学性质研究

本文描述了在反应体系中不加入任何表面活性剂或模板的情况下,以水热法合成正交相的CoV2O6.2H2O纳米带;烧结反应得到其脱水盐,即单斜相CoV2O6。通过X射线粉末衍射法(XRD),场发射扫描电子显微镜(FE-SEM),透射电子显微镜(TEM)和X射线光电子能谱(XPS)等研究了这些产物的物相、形貌和化学组成等,并通过热重分析研究了CoV2O6·2H2O纳米带的热稳定性。此外,还观察了CoV2O6.2H2O纳米带的形成过程,认为其遵循一个经典的固-液-固的形成机制。最后,通过锂离子电池实验研究了CoV2O6.2H2O纳米带及其脱水盐的电化学性质,发现其放电容量分别达到980和675 mAh·g-1。     

Polymer micelle-directed growth of BaCO(3) spiral nanobelts

We discovered that micelles of a thermo-responsive polypeptide-based copolymer are able to direct growth of barium carbonate (BaCO(3)) in the form of nanobelts. The BaCO(3) nanobelts tend to grow around a formed crystal, and curl into a spiral superstructure.     

Property–Performance Control of Multidimensional,Hierarchical, Single‐Crystalline ZnO Nanoarchitectures

Diverse morphologies of multidimensional hierarchical single‐crystalline ZnO nanoarchitectures including nanoflowers, nanobelts, and nanowires are obtained by use of a simple thermal evaporation and vapour‐phase transport deposition technique by placing Au‐coated silicon substrates in different positions inside a furnace at process temperatures as low as 550 °C. The nucleation and growth of ZnO nanostructures are governed by the vapour–solid mechanism, as opposed to the commonly reported vapour–liquid–solid mechanism, when gold is used in the process. The morphological, structural, compositional and optical properties of the synthesized ZnO nanostructures can be effectively tailored by means of the experimental parameters, and these properties are closely related to the local growth temperature and gas‐phase supersaturation at the sample position. In particular, room‐temperature photoluminescence measurements reveal an intense near‐band‐edge ultraviolet emission at about 386 nm for nanobelts and nanoflowers, which suggests that these nanostructures are of sufficient quality for applications in, for example, optoelectronic devices.