Hall resistivity of granular metals

We calculate the Hall conductivity sigma(xy) and resistivity rho(xy) of a granular system at large tunneling conductance g(T)>1. We show that in the absence of Coulomb interaction the Hall resistivity depends neither on the tunneling conductance nor on the intragrain disorder and is given by the classical formula rho(xy)=H/(n*ec), where n* differs from the carrier density n inside the grains by a numerical coefficient determined by the shape of the grains. The Coulomb interaction gives rise to logarithmic in temperature T correction to rho(xy) in the range Gamma less or similar T less or similar min(g(T)E(c), E(Th)), where Gamma is the tunneling escape rate, E(c) is the charging energy, and E(Th) is the Thouless energy of the grain.     

Suppression of superconductivity in granular metals

We investigate the suppression of the superconducting transition temperature due to Coulomb repulsion in granular metallic systems at large tunneling conductance between the grains, g(T)>1. We find the correction to the superconducting transition temperature for 3D granular samples and films. We demonstrate that, depending on the parameters of superconducting grains, the corresponding granular samples can be divided into two groups: (i). the granular samples that belong to the first group may have only insulating or superconducting states at zero temperature depending on the bare intergranular tunneling conductance g(T), while (ii). the granular samples that belong to the second group in addition have an intermediate metallic phase where superconductivity is suppressed while the effects of the Coulomb blockade are not yet strong.     

Coulomb-blockade-induced bound quasiparticle states in a double-island structure

We determine the low temperature shape of the Coulomb-blockade staircase in a superconducting double-island device. For an odd number of electrons, in the ground state the intrinsic quasiparticle is bound to the tunneling contact. For a single channel contact the gap between the ground state and the continuum of excited states is of the order of the Josephson energy E(J). The temperature dependence of the Coulomb-blockade step width is nonmonotonic, with the minimal width occurring at T(i) approximately E(J)/ln(square root DeltaE(J)/delta), where Delta and delta are, respectively, the superconducting gap and mean level spacing in the island. For an even number of electrons, the Coulomb enhancement of the Josephson energy is shown to be significantly stronger than that for a single grain coupled to a lead. If the electrostatic energy favors a single broken Cooper pair, the resulting quasiparticles are bound to the contact at T=0.     

Thermal conductivity of a granular metal

Using the Kubo formula approach, we study the effect of electron interaction on thermal transport in the vicinity of a metal-insulator transition, with a granular metal as our model. For small values of dimensionless intergrain tunneling conductance, g<1, we find that the thermal conductivity surprisingly shows a phononlike algebraic decrease, kappa(T) approximately g2T3/E2c even though the electrical conductivity obeys an Arrhenius law, sigma(T) approximately ge-Ec/T ; therefore the Wiedemann-Franz (WF) law is seriously violated. We explicitly show that this violation arises from nonmagnetic bosonic excitations of low energy that transport heat but not charge. At large values of intergrain tunneling, we find it plausible that the WF law weakly deviates from the free-electron theory due to potential fluctuations. Implications for experiment are discussed.     

Quantum percolation in granular metals

Theory of quantum corrections to conductivity of granular metal films is developed for the realistic case of large randomly distributed tunnel conductances. Quantum fluctuations of intergrain voltages (at energies E much below the bare charging energy scale E(C)) suppress the mean conductance g (E) much more strongly than its standard deviation sigma(E). At sufficiently low energies E(*) any distribution becomes broad, with sigma(E(*)) approximately g (E(*)), leading to strong local fluctuations of the tunneling density of states. The percolative nature of the metal-insulator transition is established by a combination of analytic and numerical analysis of the matrix renormalization group equations.     

Acoustic properties of amorphous silica between 1 and 500 mK

We have made reliable measurements of the sound velocity delta v/v(0) and internal friction Q(-1) in vitreous silica at 1.03, 3.74, and 14.0 kHz between 1 mK and 0.5 K. In contrast with earlier studies that did not span as wide a temperature and frequency range, our measurements of Q(-1) reveal a crossover (as T decreases) only near 10 mK from the T(3) dependence predicted by the standard tunneling model to a T dependence predicted if interactions are accounted for. We find good fits at all frequencies using a single interaction parameter, the prefactor of the interaction-driven relaxation rate, in contrast to earlier claims of a frequency dependent power law. We also show that the discrepancy in the slopes d(delta v/v(0))/d(log(10)T) below and above the sound velocity maximum (1: -1 observed, 1: -2 predicted) can be resolved by assuming a modified distribution of tunneling states.     

Density of states of amorphous GdxSi1-x at the metal-insulator transition

We have determined the electronic density of states of amorphous Gd xSi (1-x), N(GdSi)(E), in the vicinity of the metal-insulator transition by measuring the tunneling conductance dI/dV across a Gd xSi (1-x)/oxide/Pb tunnel junction at low T (T approximately 100 mK). By applying a magnetic field we can tune through the metal-insulator transition and simultaneously measure the transport and N(E) on a single sample. We find a smooth transition from a metal with strong Coulomb interactions to a developing Coulomb gap in the insulating regime. In the metallic region N(GdSi)(0) scales approximately with sigma(2).     

多晶TaN1-δ薄膜的电输运性质研究

利用射频溅射法在石英玻璃基底上制备了一系列面心立方结构的多晶TaN_1-δ薄膜, 并对其晶体结构和2–350 K温度范围的电子输运性质进行了系统研究. 薄膜呈多晶结构, 并且平均晶粒尺寸随着基底温度的升高逐渐增大. 电输运测量结果表明, TaN_1-δ薄膜在5 K以下表现出类似超导体-绝缘体颗粒膜的电输运性质; 随着温度的升高, 薄膜在10–30 K表现出类似金属-绝缘体颗粒膜的性质; 在70 K以上, 热涨落诱导的遂穿导电机理主导着电阻率的温度行为. 我们的结果表明: TaN_1-δ多晶薄膜的类颗粒膜属性使其具有较高的电阻率和负的电阻温度系数.     

Electron transport in granular metals

We consider thermodynamic and transport properties of a long granular array with strongly connected grains (intergrain conductance g>1). We find that the system's conductance and differential capacitance exhibits activated behavior, approximately exp([-T(*)/T]. The gap T(*) represents the energy needed to create a long single-electron charge soliton propagating through the array. This scale is parametrically larger than the energy at which conventional perturbation theory breaks down.     

Atomic scale imaging and spectroscopy of a CuO(2) plane at the surface of Bi(2)Sr(2)CaCu(2)O(8+delta)

We have used a scanning tunneling microscope to demonstrate that a single CuO2 plane can form a stable and atomically ordered layer at the surface of Bi(2)Sr(2)CaCu(2)O(8+delta). In contrast to previous studies on high-T(c) surfaces, the CuO2-terminated surface exhibits a strongly suppressed tunneling conductance at low voltages. We consider a number of different explanations for this phenomena and propose that it may be caused by how the orbital symmetry of the CuO2 plane's electronic states affects the tunneling process.     

Tunnel window's imprint on dipolar field distributions

We have performed Monte Carlo simulations of interacting dipoles that relax through quantum tunneling. We aim to mimic tunneling experiments on crystals of magnetic clusters, such as Fe(8), at very low temperatures. Accordingly, we allow spin flips only if the corresponding energy change is less than some 2 delta h(hf). Time evolutions of the dipolar field distribution P(t)(H) are studied. As in experiments, a "hole" develops in P(t)(H). The half-width W of incipient holes of weakly polarized systems are, under certain conditions, simply related to delta h(hf). For k(B)T less than approximately 0.5 delta h(hf) and delta h(hf) smaller than approximately 1/10 of the half-width of the dipolar field distributions of disordered systems, W approximately equal to 0.75 delta h(hf).     

Absence of compressible edge channel rings in quantum antidots

We report resonant tunneling experiments in a quantum antidot sample in the integer quantum Hall regime. In particular, we have measured the temperature T dependence of the peak value of a conductance peak on the i = 2 plateau, where there are two peaks per magnetic flux quantum straight phi(0). We observe a T-1 dependence as expected when tunneling through only one electron state is possible. This result is incompatible with tunneling through a compressible ring of several degenerate states. We also observe, for the first time, three conductance peaks per straight phi(0) on the i = 3 plateau.     

Phase diagram of the electron-doped La2-xCexCuO4 cuprate superconductor from Andreev bound states at grain boundary junctions

We use quasiparticle tunneling across La2-xCexCuO4 grain boundary junctions to probe the superconducting state and its disappearance with increasing temperature and magnetic field. A zero bias conductance peak due to zero energy surface Andreev bound states is a clear signature of the phase coherence of the superconducting state. Hence, such a peak must disappear at or below the upper critical field Bc2(T). For La2-xCexCuO4 this approach sets a lower bound for Bc2(0) approximately 25 T which is substantially higher than reported previously. The method of probing the superconducting state via Andreev bound states should also be applicable to other cuprate superconductors.     

Superconductivity in disordered thin films: giant mesoscopic fluctuations

We discuss the intrinsic inhomogeneities of superconductive properties of uniformly disordered thin films with a large dimensionless conductance g. It is shown that mesoscopic fluctuations, which usually contain a small factor 1/g, are crucially enhanced near the critical conductance g(cF) > 1 where superconductivity is destroyed at T = 0 due to Coulomb suppression of the Cooper attraction. This leads to strong spatial fluctuations of the local transition temperature and thus to the percolative nature of the thermal superconductive transition.     

Cascade of quantum phase transitions in tunnel-coupled edge states

We report on the cascade of quantum phase transitions exhibited by tunnel-coupled edge states across a quantum Hall line junction. We identify a series of quantum critical points between successive strong and weak tunneling regimes in the zero-bias conductance. Scaling analysis shows that the conductance near the critical magnetic fields B(c) is a function of a single scaling argument /B-B(c)/T(-kappa), where the exponent kappa=0.42. This puzzling resemblance to a quantum Hall-insulator transition points to the importance of interedge correlation between the coupled edge states.     

Evolution of transport regimes in carbon nanotube quantum dots

We study the evolution of conductance regimes in carbon nanotubes with doubly degenerate orbitals (shells) by controlling the contact transparency within the same sample. For sufficiently open contacts, Kondo behavior is observed for 1, 2, and 3 electrons in the topmost shell. As the contacts are opened more, the sample enters the "mixed valence" regime, where different charge states are strongly hybridized by electron tunneling. Here, the conductance as a function of gate voltage shows pronounced modulations with a period of four electrons, and all single-electron features are washed away at low temperature. We successfully describe this behavior by a simple formula with no fitting parameters. Finally, we find a surprisingly small energy scale that controls the temperature evolution of conductance and the tunneling density of states in the mixed valence regime.     

Quantum phase diagram of granular superconducting quantum dots array

We study the quantum phase diagram of granular superconducting quantum dots (GSQD) array. We implement the physics of granularity by considering site dependent Josephson couplings, on-site charging energies and the intersite interactions. We predict dimer density wave and staggered phases at the insulating state for higher order commensurability. Several parts of the quantum phase diagram of GSQD are in contrast with the clean superconducting quantum dots array. We also obtain the superconducting phase of GSQD. We develop the theory for weak tunneling conductance and the Coulomb energy is smaller than the superconducting gap.     

Full current statistics of incoherent "cold electrons"

We evaluate the full current statistics (FCS) in the low-dimensional (1D and 2D) diffusive conductors in the incoherent regime eV>E(Th)=D/L(2), E(Th) being the Thouless energy. It is shown that the Coulomb interaction substantially enhances the probability of big current fluctuations for short conductors with E(Th)>1/tau(E), tau(E) being the energy relaxation time, leading to the exponential tails in the current distribution. The current fluctuations are most strong for low temperatures, provided E(Th) approximately [(eV)(2)/Dnu(2)(1)](1/3) for 1D and E(Th) approximately (eV/g)ln(g for 2D, where g is a dimensionless conductance and nu(1) is a 1D density of states. The FCS in the "hot electron" regime is also discussed.     

Influence of phonon-associated tunneling rate on transport through a single-molecule transistor

We study the electronic transport through a single-molecule transistor (SMT) by considering the phonon-associated tunneling rate. We find that the electron-phonon interaction (EPI) changes the constant conductivities of the leads into a multi-channel structure of single vibration frequency. This interference of the multi-channel tunneling process results in a bias-dependent tunneling rate and obscures the conductance peaks at large bias voltage. The bias-dependent tunneling rate further causes a remarkable conductivity gap between the chemical potential of the leads (n=0) and the first phonon sideband (n=1). These anomalies are consistent with the experimental observations in transport experiments.     

Single electron tunneling at large conductance: The semiclassical approach

We study the linear conductance of single electron devices showing Coulomb blockade phenomena. Our approach is based on a formally exact path integral representation describing electron tunneling nonperturbatively. The electromagnetic environment of the device is treated in terms of the Caldeira-Leggett model. We obtain the linear conductance from the Kubo formula leading to a formally exact expression which is evaluated in the semiclassical limit. Specifically we consider three models. First, the influence of an electromagnetic environment of arbitrary impedance on a single tunnel junction is studied focusing on the limits of large tunneling conductance and high to moderately low temperatures. The predictions are compared with recent experimental data. Second, the conductance of an array of N tunnel junctions is determined in dependence on the length N of the array and the environmental impedance. Finally, we consider a single electron transistor and compare our results for large tunneling conductance with experimental findings. Received 2 February 2000