La_4Ga的超导电性

用高速液相淬火方法获得了非晶态La_4Ga。然后在80千巴高压下对非晶样品进行不同温度的退火处理,在450℃获得了一个单相的La_4Ga化合物,其T_c值为6.5。     

Mn_3Ga的晶体结构

本文用X射线粉末法,测定了Mn_3Ga的晶体结构。Mn_3Ga属六角晶系。26.8at.%Ga的合金在20℃的点阵常数是:a=5.4065A,c=4.3537A,c/a=0.8053。空间群为D_(6h)~4/mmc。每个单胞含两个化合式量,其中6个Mn原子占据6(h)的位置,原子参数x_h=0.837,2个Ga原子占据2(c)的位置。这是一个畸变型的DO_(19)有序密堆积超结构。Mn-Ga采内相当于这个结构的均匀范围并不包括理想成分在内,而偏移在富Ga的一边。     

Theoretical study on structures of Ga3N, GaN3, Ga3N2 and Ga2N3 clusters

The structures of Ga_3N, GaN_3, Ga_3N_2 and Ga_2N_3 clusters are studied using the full-potential linear-muffin-tin-orbital molecular dynamics (FP-LMTO MD) method. Four structures for Ga_3 N, five structures for GaN_3, nine structures for Ga_3N_2 and nine structures for Ga_2N_3 have been obtained. The most stable structures of these clusters are planar ones. A strong dominance of the N－-N bond over the Ga－-N and Ga－-Ga bonds appears to control the structural skeletons, supporting the previous result obtained by Kandalam and co-workers. The most stable structures of these small GaN clusters displayed semiconductor-like properties through the calculation of the HOMO－LUMO gaps.     

高掺杂Ga对ZnSe:Ga,Cu晶体中深中心发射的影响

本文研究了高掺杂Ga对ZnSe:Ga,Cu晶体中深中心光致发光谱带的影响。首次在高掺杂ZnSe:Ga,Cu中观察到了Cu-G带峰值位置随Ga浓度增大向长波方向移动的现象,并把它归因于高浓度的Ga和Cu相互作用,产生了谱峰为5580Å的新发射带,其半高宽(FWHM)大于Cu-G谱带的半高宽。此外还得到,随着Cu浓度增加,Cu-G带与Cu-R带强度之比减小。文中指出,Ga浓度较低时,ZnSe:Ga,Cu晶体与ZnSe:Cu晶体有相同的Cu深中心发射规律,即随着Cu浓度增大,Cu-G带与Cu-R带的强度比增大,由Cu-R发射带占优势逐渐过渡到Cu-G发射带占优势。     

Ga梯度分布对Cu(In,Ga)Se_2薄膜及太阳电池的影响

传统制备Cu(In,Ga)Se2(CIGS)手段之一是共蒸发三步法,工艺中通过Cu,In,Ga,Se 4种元素相互扩散、作用形成抛物线形的Ga梯度分布.本文通过调整Ga源温度制备了Ga梯度分布不同的CIGS薄膜及电池.利用多种测试方法,研究了Ga梯度分布不同对CIGS薄膜表面及背面结构性质及电性质的影响,计算分析了表面导带失调值及背面电场对电池性能的影响,从而获得了合适的Ga梯度分布,提高了电池光谱相应,获得了较好的电池性能参数.     

GaN及其Ga空位的电子结构

用团簇埋入自洽计算法对宽禁带半导体GaN的电子结构进行了自旋极化的、全电子、全势场的从头计算,得到了与实验值符合的GaN晶体禁带宽度以及价带中N2p带、N2s带和Ga3d带之间的相对位置.在此基础上Ga空位计算(无晶格畸变)显示,Ga空位周围的费米面显著高于正常GaN晶格的费米面.因此Ga空位周围N原子的处于费米面上的2p电子很易被激发成正常晶格处的传导电子 关键词： GaN 电子结构 团簇埋入自洽计算     

La—Ga二元系相图

本文用X射线衍射和差热分析方法对La-Ga二元系相图的富Ga部份进行了研究。发现在La-Ga系相图的富Ga部份存在着一包晶反应,形成一新的金属互化物,其均匀范围很窄。确定了这一新化合物为LaGa₆,属四方晶系,空间群为P4/nbm,点阵常数α=6.1041?,c=7.7052?。另外还发现LaGa₂这一金属互化物存在着一个相区,其均匀范围为66.7A/0 Ga到71.6A/0 Ga。在这一相区内,点阵常数α随Ga含量的递增而增大,c随之减少。论证了这一固溶体系由一对Ga原子无序地替代一个La原子的结果。 关键词：     

Magnetic and mechanical properties of Ni–Mn–Ga/Fe–Ga ferromagnetic shape memory composite

A ferromagnetic shape memory composite of Ni–Mn–Ga and Fe–Ga was fabricated by using spark plasma sintering method. The magnetic and mechanical properties of the composite were investigated. Compared to the Ni–Mn–Ga alloy,the threshold field for magnetic-field-induced strain in the composite is clearly reduced owing to the assistance of internal stress generated from Fe–Ga. Meanwhile, the ductility has been significantly improved in the composite. A fracture strain of 26% and a compressive strength of 1600 MPa were achieved.     

MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs

A microwave monolithic integrated circuit （MMIC） C-band low noise amplifier （LNA） using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors （CC-HEMTs） has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm ×100 μm device showed very high-dynamic range with decent gain and noise figure.[第一段]     

扩散Nb_3Ga样品的实验观察

本文报道了扩散Nb_3Ga带样的X光金相分析和超导转变温度的测试结果。     

C-ZnSe:Ga的室温蓝色注入式发光

本文首次报导了C-ZnSe:Ga的室温蓝色注入式发光,测量了有关特性并讨论了发光机理.电致发光光谱具有强的4800A的蓝峰和弱的6300A的红峰.随着正向电压的增加,6300A的自激活发射相对减弱,而4800A的蓝色边缘发射逐渐增强.因此,当电压增加时,发光颜色由红色经黄色和绿色,逐渐变成纯蓝色.在明亮的房间里可以观察到鲜明的蓝色发射.文末提出了ZrSe多色显示的设想.     

Zn在Ga1-xAlxAs中的扩散规律

本文论述了在720℃～750℃的温度下,Zn在Ga1-xAlxAs,GaAs中的扩散。研究了结深x1,随片子表面Al组份x值的变化规律。实验表明在同一扩散条件下,Ga1-xAlxAs与GaAs两种材料的结深xj并不相同。在此基础上获得了Al组份x=0.34的最佳扩散条件。     

Ba8Ga16Si30与Sr8Ga16Ge30电子特性和热性质的研究

采用基于密度泛函理论和平面波赝势技术的CASTEP程序计算了笼状化合物Ba8Ga16Si30与Sr8Ga16Ge30的电子结构,并以此为基础进一步研究了它们的热性质。态密度和布居分析显示,Ba8Ga16Si30中笼上原子间成键趋于共价性,Sr8Ga16Ge30中笼上原子间成键趋于离子性,可以认为Ba8Ga16Si30的稳定性比Sr8Ga16Ge30强。带结构显示Ba8Ga16Si30与Sr8Ga16Ge30均为金属。热性质研究中提出一个新的模型,模型中认为Ba8Ga16Si30的笼内Ba原子和笼上Ga原子做爱因斯坦振荡,笼上Si原子做德拜运动,这种模型能够更好地描述Ba8Ga16Si30的热导。     

Growth Control of High-Performance In As/Ga Sb Type-Ⅱ Superlattices via Optimizing the In/Ga Beam-Equivalent Pressure Ratio

The performance of type-II superlattice(T2 SL) long-wavelength infrared devices is limited by crystalline quality of T2 SLs. We optimize the process of growing molecular beam epitaxy deposition T2 SL epi-layers on Ga Sb(100)to improve the material properties. Samples with identical structure but diverse In/Ga beam-equivalent pressure(BEP) ratio are studied by various methods, including high-resolution x-ray diffraction, atomic force microscopy and high-resolution transmission electron microscopy. We find that appropriately increasing the In/Ga BEP ratio contributes to improving the quality of T2 SLs, but too large In BEP will much more easily cause a local strain,which can lead to more In Sb islands in the In Sb interfaces. The In Sb islands melt in the In Sb interfaces caused by the change of chemical potential of In atoms may result in the "nail" defects covering the whole T2 SLs, especially the interfaces of Ga Sb-on-In As. When the In/Ga BEP ratio is about 1, the T2 SL material possesses a lower full width at half maximum of +1 first-order satellite peak, much smoother surface and excellently larger area uniformity.     

Ga掺杂δ-Pu的密度泛函理论计算

δ-Pu为Pu的高温相,掺杂少量的Ga即可使其在室温下稳定存在.本文采用密度泛函理论方法,对不同掺杂量体系进行晶体结构和电子结构计算,主要包括体系的晶格常数、密度、形成能、态密度、电荷密度和Mulliken布居分析.结果表明：在研究范围内,Ga掺杂后,体系晶格常数降低,密度增大,6.25%（原子百分比,下同）掺杂量体系的稳定性高于3.125%和12.5%掺杂量的体系;Ga掺杂使得Pu周围体系电子的局域性增强,成键能力增强,揭示了Ga稳定δ-Pu的电子机制.Ga和Pu之间为金属键,发生的作用主要由Pu的7s、6p、6d和Ga的4s、4p轨道电子贡献,但这种成键作用相对较弱,使得掺杂体系可以保持原有的力学性能和机械加工性能.Ga对δ-Pu的稳定作用主要在于改善Pu原子的成键性能,而不是与Pu原子直接成键.     

npnp Ga1-xAlxAs负阻发光二极管研究成功

采用多层异质液相外延技术,制出了具有开关、存储、发光等多种功能的npnp Ga1～sAl2As负阻发光二极管。其典型参数为阈值电压Vth:5～50v,阈值电流Ith<1mA,保持电压Vk～1.8v,保持电流Ik<3mA,反向击穿电压Vk40～100v,反向漏电流。     

一种液相外延Ga1-xAlxAs的新方法

本文报道了一种新的Ga1-xAlxAs液相外延方法.靠控制降温速度,可以在外延表面3-4μ处得到x值均匀甚至沿生长方向有上升趋势的外延层.其外延表面光亮、缺陷少、无机械损伤.由于上述过程都是在单一外延层上完成的,所以利用此方法可以大幅度降低成本,提高成品率.制成的器件在If=20mA时.总光通量一般为3-6mlum.予计效率还会进一步提高.     

Giant magnetostriction in rapidly quenched Fe–Ga?

Substituting Fe by nonmagnetic Ga causes a dramatic increase of the magnetostriction. The reason for this effect is related to structure and also due to softening of the elastic properties. Of special interest is that in literature “giant” magnetostriction values (up to 2100 ppm) for rapidly quenched Fe–Ga (15–20% Ga) ribbons were reported. In this work, careful investigations using a strain gauge method as well as a capacitance cell were performed. Especially for the case applying an external field perpendicular to the ribbon plane, it is demonstrated that bending effects can occur and they are difficult to avoid without introducing any stress into the sample. This effect leads to large signals in the strain gauge of more than ±3000 ppm, which sign depends on the occurrence of strain or stress. Experiments on a 25-μm-thin Fe foil leads to similar results. Avoiding bending by gluing ribbons or thin foils or splat-cooled thin pure Ni on a thin plastic plate, gave magnetostriction values close to those of polycrystalline bulk materials.     

Study of In0.49Ga0.51P/GaAs/In0.49Ga0.51P doubleδ-doped heterojunction bipolar transistor

A lattice-matched In_0.49Ga_0.51P/GaAs/In_0.49Ga_0.51P doubleδ -doped heterojunction bipolar transistor, prepared by low-pressure metal organic chemical vapor deposition (LP-MOCVD), is fabricated successfully and reported. Due to the insertion of δ -doped sheets and setback layers both at base–emitter (B–E) and base–collector (B–C) heterojunctions, the potential spikes are suppressed significantly. In addition, the electron blocking effect is removed and a dramatic improvement of current gain is obtained. A modified Ebers–Moll model is employed to study and analyse the device performances. The experimental results show that the common-emitter current gain over 210 at the collector current of 35 mA and an offset voltageΔV_CE smaller than 50 mV are obtained. Also, a lower knee-shaped voltage of 1.4 V at the collector current of 40 mA is observed. These results indicate that the device studied is a good candidate for high-speed and high-power circuit applications.     

Wiedemann effect of Fe—Ga based magnetostrictive wires

(Fe83Ga17)98Cr2 wires each with a diameter of 0.7 mm are prepared by hot swaging and warm drawing from the casting rods directly,because the ductility of Fe83Ga17 alloy is improved by adding Cr element.The Wiedemann twists and dependences on magnetostrictions of Fe83Ga17 and(Fe83Ga17)98Cr2 wires are investigated.The largest observed Wiedemann twists of 245 s·cm-1 and 182 s·cm-1 are detected in the annealed Fe83Ga17 and(Fe83Ga17)98Cr2 wires,respectively.The magnetostrictions of the annealed Fe83Ga17 and(Fe83Ga17)98Cr2 wires are 160 ppm and 107 ppm,respectively.The maximum of the Wiedemann twist increases with magnetostriction increasing.However the magnetostriction is just one important factor that affects the Wiedemann effect of alloy wire,and the relationship between magnetostriction and Wiedemann effect is a complex function rather than a simple function.