Growth and thermal stability of Fe, Ni, Rh and Pd layers on the (111)W crystal face

LEED, AES and Δφ measurements were used to investigate the growth of Fe, Ni, Rh and Pd layers on the tungsten (111) surface. The thermal stabilities of the layers and of the substrate were also examined. Both were found to be thermally unstable at coverages above one monolayer. In addition, Rh and Pd were found to cause faceting of the substrate surface. In thick Fe layers, a non-wetting-wetting transition was observed.     

Growth and thermal stability of ultra-thin Ag and Au layers on Mo(1 1 1) surface

The influence of temperature on the growth process of ultra-thin Ag and Au layers on the Mo(1 1 1) surface was investigated. At 300 K growth of the Stranski-Krastanov type was found for Ag; for Au growth of the monolayer plus simultaneous multilayers type was found, where a base layer is one physical layer. The first three geometrical adsorbed layers for Ag are thermally stable. For annealed Au layers triangle features with base side length from 15 to 35 Å were formed for θ < 6 monolayer (ML), and for θ > 6 ML part of the Au formed a flat adlayer with Au atoms grouped in equilateral triangles with side length 7 Å. The presence of Au layers does not cause faceting, layers are not smooth which could be caused by the fact that Au does not wets the substrate. For Ag thick layers reversible wetting/non-wetting transition was observed at 600 K. Ag layers on Mo(1 1 1) surface did not lead to faceting.     

Adsorption of PTCDI on Au(1 1 1): Photoemission and scanning tunnelling microscopy

The adsorption of perylene-3,4,9,10-tetracarboxylic-3,4,9,10-diimide (PTCDI) on Au(1 1 1) has been studied using synchrotron-based X-ray photoelectron spectroscopy and in situ scanning tunnelling microscopy. Direct topographic and surface coverage information provided by the scanning probe measurements have enabled us to correlate peaks in the relatively complex carbon core-level photoemission to interactions of the surface with different parts of the PTCDI molecule. A strong interaction between the imide ends of the molecule with the underlying gold substrate is evidenced by a large chemical shift in the imide carbon peaks, which is observed only for the first adsorbed layer.     

Adsorption and thermal decomposition of N-methylaniline on Pt(1 1 1)

The adsorption and thermal decomposition of N-methylaniline (NMA) on the Pt(1 1 1) surface has been studied with reflection absorption infrared spectroscopy (RAIRS), temperature programmed desorption (TPD), and X-ray photoelectron spectroscopy (XPS). NMA adsorbs molecularly at 85 K through the nitrogen lone pair and is stable up to 300 K. At temperatures of 300–350 K it converts to two or more surface intermediates including the N-methyleneaniline (NMEA) species. This NMEA intermediate dissociates upon annealing to 450 K, and further annealing leads to the desorption of HCN and H₂, leaving only C on the surface at 800 K.     

Growth of Au thin film on Cu-modified Si(1 1 1) surface

Miniaturizing of electronic devices requires that conductive elements maintain advanced electrical characteristics upon reducing their geometrical sizes. For gold, which is valued for its high electrical conductivity and stability against ambient conditions, creation of extra-thin films on silicon is hampered by formation of the quite complex Au/Si interface. In the present work, by forming a Si(1 1 1)5.55 × 5.55-Cu surface reconstruction prior to Au deposition we formed Au films with smoother surface morphology and higher surface conductivity compared to Au film grown on a pristine Si(1 1 1)7 × 7 surface. Scanning tunnelling microscopy and four-point probe measurements were used to characterize the growth mode of the Au film on a Si(1 1 1)5.55 × 5.55-Cu reconstruction at room temperature.     

Growth and characterization of thin PTCDA films on 3C-SiC(0 0 1)c(2 × 2)

The growth of thin 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) films on a 3C-SiC(0 0 1)c(2 × 2) substrate has been studied by means of photoelectron spectroscopy (PES) and atomic force microscopy (AFM). In the first monolayer the molecules interact with the substrate mainly through the O atoms in the end groups of the molecule. The O atoms have a higher binding energy in the first molecular layer compared to the following layers. No chemical shifts are observed in the Si 2p spectra or in the C 1s spectra from the perylene core of the molecules. From the VB spectra and LEED pattern we conclude that the substrate remains in the c(2 × 2) reconstruction after PTCDA deposition. For thicker films a Stranski-Krastanov film growth was observed with flat lying molecules relative to the substrate.     

Adsorption of hydrogen and of oxygen on an open metal surface-HREELS investigation at Ni(311)

The adsorption behavior of hydrogen and oxygen on the stepped Ni(311) surface has been investigated by HREELS. A series of metastable phases was found for hydrogen adsorption at low temperatures with a succession of different adsorption sites indicated by the following loss peaks: 55 and 149 meV for the threefold site, shifting with higher coverage to 65 and 155 meV, respectively; 40 and 90 meV for the fourfold site, shifting to 35 and 85 meV with coverage; and 110 and 124 meV for an additional site between close packed rows. Room temperature adsorption of hydrogen leads to the reconstruction of the surface with occupation of three- and fourfold sites, represented by loss peaks at 60 and 145 meV for the threefold site and 74 meV for the fourfold site. This phase is the thermodynamically stable one. Oxygen is most likely initially adsorbed on a bridge site (loss peak at 66 meV). The stepped surface is already oxidized at very low exposures to oxygen, as seen by the characteristic vibration for oxide islands at 55 meV and later by the Fuchs-Kliewer mode of NiO at 68 meV.     

Electronic properties of thin Zn layers on Pd(1 1 1) during growth and alloying

The growth and alloying of thin Zn layers on Pd(1 1 1) was investigated using X-ray and ultraviolet photoelectron spectroscopy as well as low energy electron diffraction and correlated with density functional calculations. At 105 K, the formation of a pseudomorphic Zn monolayer is observed. Upon heating this layer to 550 K or upon deposition of 1 ML at 550 K, an ordered p(2 × 1) PdZn surface alloy with a Pd:Zn ratio of ∼1:1 is formed, with a characteristic Pd 3d_5/2 peak at a binding energy of ∼335.6 eV. For deposition of 3 ML Zn at 550 K or by heating 3 ML, deposited at low temperature, to 500 or 600 K, a PdZn alloy with a Pd:Zn ratio of again ∼1:1 is found in the surface region, with a Pd 3d_5/2 peak at ∼335.9 eV; the direct preparation at 550 K leads to a more homogeneous and better ordered alloy. The valence band spectrum of this alloy with a low density of states at the Fermi level and pronounced maxima due to the “Pd 4d” band at ∼2.4 and 3.9 eV closely resembles the spectrum of Cu(1 1 1), in good agreement with the calculated density of states for a PdZn alloy of 1:1 stoichiometry. The shift of the “Pd 4d” band to higher binding energies as compared to Pd(1 1 1) indicates a charge transfer from Zn to the Pd 4d levels. Overall, the similarity between the ultraviolet photoelectron spectra for the PdZn alloy and for Cu(1 1 1) is taken as explanation for the similar chemical activity of both systems in methanol steam reforming.     

Adsorption of helical aromatic molecules: heptahelicene on Ni(1 1 1)

The adsorption of the helically shaped polyaromatic hydrocarbon heptahelicene (C₃₀H₁₈) on Ni(1 1 1) was studied by means of STM, TPD, LEED, ToF–SIMS, XPS, and AES at temperatures between 130 and 1000 K. The molecule in the monolayer remains intact up to 500 K. Above that temperature a stepwise decomposition into carbon and hydrogen occurs; the latter desorbing subsequently as H₂. At submonolayer coverages the molecules are adsorbed randomly. The saturated monolayer shows long-range order, but no differences between the structures generated by a pure enantiomer or the racemic mixture have been observed.     

Oxidation of ultrathin indium layers on W(1 1 0)--a core-level photoemission study

We have studied the reaction of ultrathin In overlayers on W(1 1 0) with molecular oxygen at 300 K. At a coverage of 0.25 monolayers (ML) oxygen first chemisorbs dissociatively at free tungsten sites and oxidation of In occurs with some delay. At an In coverage of 1.2 ML complete oxidation of the closed overlayer is observed. Layers of 3 ML thickness first show rapid transformation from In to an In₂O₃-like species until an oxide monolayer is formed. Further oxidation occurs at much reduced rate. No oxygen-induced restructuring is observed for In at 300 K, in contrast to the response of Ag monolayers deposited on W(1 1 0).     

Growth, alloy formation and reaction with oxygen of Ag and Au submonolayers on W(1 1 0) studied by valence band and core level photoemission

We have studied epitaxial submonolayers of Ag and Au deposited one after another onto W(1 1 0) at room temperature and subsequently annealed at 600 K. Photoemission spectroscopy of valence bands and the Ag3d_5/2 core level has been used to monitor two-dimensional alloy formation. The extent of alloying depends on the order of deposition, composition and annealing. We have also studied the reaction of alloy surfaces to exposure of molecular oxygen at 300 and 600 K.     

The electronic structure of the interface between thin conjugated oligomer films and inorganic substrates with different work function

In this work, a comparison of the interfacial electronic properties between a semiconducting oligomer and a variety of substrates with different properties—metal, semiconductor and oxide layers—is reported. The interface formation was studied by X-ray and Ultraviolet photoelectron spectroscopies (XPS, UPS). High purity oligomer films with thickness up to 10 nm were prepared by stepwise evaporation on the clean substrates under ultrahigh vacuum (UHV) conditions. Analysis of the oligomer and substrate related XPS spectra clarified the interfacial chemistry and band bending in the semiconducting materials. The valence band structure and the interfacial dipoles were determined by UPS. The barriers for hole injection were measured at the interfaces of the organic film with all substrates. The interfacial energy band diagrams were deduced in all cases from the combination of XPS and UPS results. Emphasis was given on the influence of the substrate work function (eΦ) on the electronic properties of these interfaces.     

SiC formation on Si(100) via C60 precursors

The interaction between C₆₀ molecules and the Si(100) surface and the preparation of silicon-carbide thin films by thermal reaction of C₆₀ molecules with the Si(100) surface have been investigated using X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, reflection high-energy electron diffraction and atomic force microscopy measurements. The effects of annealing temperature and C₆₀ coverage on the SiC formation will be discussed. It is found that the C₆₀ molecules bond covalently with silicon, and the number of bonds increase upon increasing the annealing temperature. Annealing at T≥830°C entails the formation of stoichiometric silicon carbide clusters that coalesce to form a continuous SiC layer when the C₆₀ coverage is greater than one monolayer. Deep pits acting as silicon diffusion channels are present with dimensions that increase with the amounts of C₆₀.

The interaction of C₆₀ with the SiC surface was also investigated. It is found that a similar covalent interaction is present in the two systems C₆₀/Si and C₆₀/SiC.     

Observation of charge transfer states of F4-TCNQ on the 2-methylpropene chemisorbed Si(1 0 0)(2 × 1) surface

We have investigated the valence electronic states of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F₄-TCNQ) on the 2-methylpropene chemisorbed Si(1 0 0)(2 × 1) surface using valence photoelectron spectroscopy. Since the electron affinity of condensed F₄-TCNQ is 5.24 eV and the energy from the valence band maximum of the 2-methylpropene saturated Si(1 0 0)(2 × 1) surface to the vacuum level is 4.1 eV, spontaneous charge transfer would be expected in the present system. At sub-monolayer coverage of F₄-TCNQ, characteristic peaks are observed at 1.1 and 2.5 eV below Fermi energy. The former peak is assigned to a singly occupied affinity level, and the latter is ascribed to a relaxed highest occupied molecular orbital of adsorbed F₄-TCNQ. The work function change is increased up to +1.3 eV as a function of F₄-TCNQ coverage. These results support the occurrence of charge transfer into F₄-TCNQ on the 2-methylpropene saturated Si(1 0 0)(2 × 1) surface.     

Electronic changes of dysprosium and tungsten during growth of Dy on W(100)

Dy growth on W(100) has been studied with W 4f_7/2 core-level shift (CLS) and Dy/W(100) valence band analysis. CLS measurements of the W 4f_7/2 peaks during the growth resulted in three Dy-induced features at 31.24±0.02, 30.92±0.02 and 30.74±0.02 eV binding energies. The shift in the W 4f_7/2 peak is consistent with the reconstruction seen in the Dy thin film. Valence band study of Dy/W(100) showed an interfacial hybridization between Dy and W(100) which may be responsible for the high thermal stability of Dy superstructures on W(100). The same direction of shift in Dy 4f levels and the W 4f_7/2 level during growth suggest that these shifts are mainly strain dependent. Increasing the Dy overlayer thickness to more than 2 ML resulted in Dy 5d–6s hybridization which has been attributed to the formation of islands of Dy.     

Growth of manganese silicide films by co-deposition of Mn and Si on Si(1 1 1): A spectroscopic and morphological investigation

MnSi is a ferromagnetic compound with a Curie temperature of 29 K. Recent theoretical studies predict that 2 ML of MnSi epitaxially grown on Si show a ferromagnetic metallic ground state with spin polarization of about 50%. This would allow the development of spintronic devices based on the injection of spin-polarized current from a ferromagnetic metal into a semiconductor.In this context the possibility of growing in situ MnSi on the Si(1 1 1) surface has been explored. Thermal reaction, crystalline structure and electronic properties of the grown films have been studied in situ by photoemission spectroscopy (PES), X-ray absorption spectroscopy (XAS), and low energy electron diffraction (LEED). Depositing a thin film of Mn on Si(1 1 1) the formation of ordered islands (with dimensions dependent on the amount of deposited Mn) is driven by annealing at selected temperatures, as already observed. Our preliminary studies show that by simultaneously depositing Mn and Si in 1:1 stoichiometry on Si(1 1 1) a large improvement in the homogeneity of the MnSi films is achieved.     

A photoelectron diffraction investigation of vanadyl phthalocyanine on Au(1 1 1)

Scanned-energy mode photoelectron diffraction using the O 1s and V 2p emission perpendicular to the surface has been used to investigate the orientation and internal conformation of vanadyl phthalocyanine (VOPc) adsorbed on Au(1 1 1). The results confirm earlier indications from scanning tunnelling microscopy that the VO vanadyl bond points out of, and not into, the surface. The VO bondlength is 1.60 ± 0.04 Å, not significantly different from its value in bulk crystalline VOPc. However, the V atom in the adsorbed molecule is almost coplanar with the surrounding N atoms and is thus pulled down into the approximately planar region defined by the N and C atoms by 0.52 (+0.14/−0.10) Å, relative to its location in crystalline VOPc. This change must be attributed to the bonding interaction between the molecule and the underlying metal surface.     

Chemisorption and reactivity of furan on Pd{111}

XPS, HREELS, ARUPS and Δø data show that furan chemisorbs non-dissociatively on Pd{111} at 175 K, the molecular plane being significantly tilted with respect to the surface normal. Bonding involves both the oxygen lone pair and significant π interaction with the substrate. The degree of decomposition that accompanies molecular desorption is a strong function of coverage: 40% of the adsorbate desorbs molecularly from the saturated monolayer. Decomposition occurs via decarbonylation to yield CO_a and H_a followed by desorption rate limited loss of H₂ and CO. It seems probable that an adsorbed C₃H₃ species formed during this process undergoes subsequent stepwise dehydrogenation ultimately yielding H₂ and C_a.