Formation of ultrasmall germanium nanoislands with a high density on an atomically clean surface of silicon oxide

The experimental results of an investigation into the initial stages of growth of a germanium film on an atomically clean oxidized silicon surface are reported. It is shown that the growth of the germanium film in this system occurs through the Volmer-Weber mechanism. Elastically strained nanoislands with a lateral size of less than 10 nm and a density of 2 × 10¹² cm^?2 are formed on the oxidized silicon surface. In germanium films with a thickness greater than 5 monolayers (ML), there also arise completely relaxed germanium nanoislands with a lateral size of up to 200 nm and a density of 1.5 × 10⁹ cm^?2.     

Femtosecond Third-Order Optical Nonlinearity of Au：Bi203 Nanocomposite Films

Ultrafast third-order optical nonlinearities of the as-deposited and annealed Au：Bi2O3 nanocomposite films deposited by magnetron cosputtering are investigated by using femtosecond time-resolved optical Kerr effect （OKE） and pump probe techniques. The third-order optical nonlinear susceptibility is estimated to be 2.6Ф×10^- 10 esu and 1.8 × 10.9 esu at wavelength of 800nm, for the as-deposited and the annealed film, respectively. The OKE signal of the as-deposited film is nearly temporally symmetrical with a peak centred at zero delay time, which indicates the dominant contribution from intraband transition of conduction electrons. For the annealed film, the existence of a decay process in OKE signal implies the important contribution of hot electrons. These characteristics are in agreement with the hot electron dynamics observed in pump probe measurement.     

Nanostructuring of the submonolayer carbon coatings deposited onto the surface of silicon single crystals in a low-pressure microwave discharge plasma

The surface nanostructuring of the submonolayer carbon coatings deposited onto (111) and (100) silicon wafers in a highly ionized ultrahigh-frequency low-pressure plasma is studied. The effect of the coating thickness and the main processing parameters on the mechanisms of morphological changes is studied with allowance for the reconstruction of a single-crystal silicon surface and the mechanical stresses that appear during the preparation of an atomically clean surface during plasma-chemical etching, heterogeneous condensation, and high-temperature annealing. Integral columnar nanosystems with a density of (4?C5) × 10⁹ cm^?2 and a height of 400 nm are formed on (100) silicon single crystals using nanostructured carbon aggregates as mask coatings and highly anisotropic plasma-chemical etching.     

Fabrication and applications of ultraflexible nanostructures using dielectric heating-assisted nanoimprint on PVC films

We developed dielectric heating-assisted nanoimprint method for rapid fabrication of ultraflexible nanostructures. Using spin-coating polyvinyl-chloride (PVC) film on the glass slide, the dielectric heating on PVC film helped the pattern transfer from the mold to PVC film in few seconds. Various kinds of nanostructures were successfully made on PVC films with about 20-μm thickness. We demonstrated the applications of ultraflexible metallic nanostructures for bending measurement using surface plasmon resonance (SPR) and surface enhanced Raman scattering (SERS) on the curved surfaces. For measuring bending angles using SPR on capped nanowire arrays, the minimum detection angle was 2.4 × 10⁻³ degree under 0.02 nm wavelength resolution. For SERS measurement, the nanorod arrays on a curved substrate can increase SERS signals for two times as compared to planar SERS substrate.     

Self-cleaning characteristics on a thin-film surface with nanotube arrays of anodic titanium oxide

Self-cleaning of a surface of nanotube arrays of anodic titanium oxide (ATO) is demonstrated. The ATO was prepared in fluoride ion containing sulfate electrolytes with a structure of 0.4 μm length, 100 nm pores diameter, 120 nm interpore distance, 25 nm pore wall thickness, a 8×10⁹ pores cm⁻² pore density, and 68.2% porosity. Prepared as thin films either directly from a Ti foil or on a glass substrate, these arrays have the property that water drops spread quickly over the surface of the films without irradiation. In contrast, a flat anatase TiO₂ film requires irradiation with UV light for several minutes before the contact angle decreases to zero. The observed self-cleaning behavior of the ATO thin films is due to the capillary effect of the nanochannel structure and the superhydrophilic property of the anatase TiO₂ surface inside the tube.     

Multilayer Au/TiO2Composite Films with Ultrafast Third-Order Nonlinear Optical Properties

We report on the ultrafast third-order optical nonlinearity in multilayer Au/TiO2 composite films fabricated on quartz substrates by pulsed laser deposition technique. The linear optical properties of the films are determined and optical absorption peaks due to surface plasmon resonance of Au particles are observed at about 590hm. The third-order optical nonlinearities of the films are investigated by z-scan method using a femtosecond laser （50 fs） at the wavelength of 800 nm. The sample showed fast nonlinear optical responses with nonlinear absorption coefficient and nonlinear refractive index being -3.66 × 10^-10 m/W and -2.95 × 10^-17 m^2/W, respectively. The results also show that the nonlinear optical effects increase with the increasing Au concentration in the composite films.     

Three-Step Growth Optimization of AlN Epilayers by MOCVD

A three-step growth process is developed for depositing high-quality aluminium-nitride （AlN） epilayers on （001） sapphire by low pressure metalorganic chemical vapour deposition （LP-MOCVD）. We adopt a low temperature （LT） A1N nucleation layer （NL）, and two high temperature （HT） A1N layers with different V/Ⅲ ratios. Our results reveal that the optimal NL temperature is 840-880℃, and there exists a proper growth switching from low to high V/Ⅲ ratio for further reducing threading dislocations （TDs）. The screw-type TD density of the optimized AIN film is just 7.86×10^6 cm^-2, about three orders lower than its edge-type one of 2×10^9 cm^-2 estimated by high-resolution x-ray diffraction （HRXRD） and cross-sectional transmission electron microscopy （TEM）.     

Highly Strained Si Films with Ultra-low Dislocation Density Grown on Virtual Substrates of Thin Thickness

By using compositionally graded SiGe films as virtual substrates, tensile strained Si films with the strain of 1.5% and the threading dislocation density less than 1.0 × 10^5 cm-2 are successfully grown in micron size windows by molecular beam epitaxy （MBE）. The thickness of the virtual substrates was only 33Onto. On the surface of the s-Si films no cross-hatched lines resulting from misfit dislocations could be observed. We attribute these results to the edge-induced strain relaxation of the epitaxial films in windows, and the patterned virtual substrates with compositionally graded SiGe films.     

Effects of Proton Irradiation on a CMOS Image Sensor

We perform 9 MeV proton irradiation of a complementary metal oxide semiconductor （CMOS） image sensor at doses from 1 × 10^9 to 4 × 10^10 cm^-2. In general, the average brightness of dark output images increases with an increasing dose, and reaches the maximum at 1 × 10^10 cm^-2. The captured colour images become very blurry at 4 × 10^10 cm^-2. These can be explained by change of concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation programme with dose.     

Structural and phase transformations during initial stages of copper condensation on Si(001)

Auger-electron spectroscopy, electron-energy loss spectroscopy, low-energy electron diffraction, and atomic-force microscopy are employed to investigate the growth mechanism, composition, structural and phase states, and morphology of Cu films (0.1–1 nm thick) deposited on a Si(001)-2 × 1 surface at a lower temperature of Cu evaporation (900°C) and room temperature of a substrate. The Cu film phase is shown to start growing on the Si(001)⁻² × 1 surface after three Cu monolayers (MLs) are condensed. It has been revealed that atoms of Cu and Si(001) are mixed, a Cu₂Si film phase is formed, and, thereafter, Cu₃Si islands arise at a larger coating thickness. Annealing of the first Cu ML leads to reconstruction of the Si(001)-1 × 1-Cu surface layer, thereby modifying the film growth mechanism. As a consequence, the Cu₂Si film phase arises when the thickness reaches two to four MLs, and bulk Cu₃Si silicide islands begin growing at five to ten MLs. When islands continue to grow, their height and density reach, respectively, 1.5 nm and 2 × 10¹¹ cm⁻² and the island area is 70% of the substrate surface at a thickness of ten MLs.     

High-Sensitivity Sensor Based on Surface Plasmon Resonance Enhanced Lateral Optical Beam Displacements

We present a new optical sensor based on surface plasmon resonance （SPIt） enhanced lateral optical beam displacements. Compared with the traditional SPIt methods, the new method provides higher sensitivity to the sensor system. Theoretical simulations show that the refractive index （RI） detection sensitivity of the SPR sensor based on the displacement measurement has a strong dependence on the thickness of the metal film. When the optimal thickness of the metal film is selected, the RI resolutlon of the SPIt sensor is predicted to be 2.2 × 10^-7 refractive index units （RIU）. Furthermore, it is found that the incidence angle can be used as a parameter to adjust the operating range of the sensor to different refractive index ranges.     

AlGaN-Based Solar-Blind Schottky Photodetectors Fabricated on AlN/Sapphire Template

We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff- wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1× 10^-6A/cm^2 at the reverse bias of 5 V. The specific detectivity D＊ is estimated to be 3.3 × 10^12cmHz^1/2 W^-1 . To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current.     

石油醚在流体静高压下的超声声速、衰减、密度和绝热压缩系数

 专门设计了用脉冲-回波-重合法在不同静水压下测量液体声速的装置，并对石油醚在0.1~650 MPa流体静压力范围内测量了其超声声速和衰减系数。还通过测量体积压缩量和质量得到石油醚密度ρ随流体静压力的变化。最后，给出了石油醚的绝热压缩系数β与流体静压力的关系。     

Photoinduced Birefringence and Broadband All-Optical Photonic Switch in a Bacteriorhodopsin/Polymer Composite Film

Photoinduced birefringence with large optical nonlinearity in a bacteriorhodopsin/polymer composite film is observed. A high refractive index change of 8.5×10^-5 photoinduced by 476nm pumping beam is reached at the low intensity of 6.5mW/cm². Based on it, a broadband all-optical photonicswitch is realized with an optical controlling switch system. Because of controlling beam's selectivity in switching, the transporting beams of different wavelengths with different intensities and shapes can be modulated by adjusting the wavelength and intensity of the controlling beam.     

Ultra-Stable Rubidium-Stabilized External-Cavity Diode Laser Based on the Modulation Transfer Spectroscopy Technique

We construct an ultra-stable external-cavity diode laser via modulation transfer spectroscopy referencing on a hyperfine component of the ST Rb D2 lines at 780 nm. The Doppler-free dispersion-like modulation transfer signal is obtained with high signal-to-noise-ratio. The instability of the laser frequency is measured by beating with an optical frequency comb which is phase-locked to an ultra-stable oven controlled crystal oscillator. The Allan deviation is 3.9 × 10-13 at I s averaging time and 9.8 ×10-14 at 90s averaging time.     

Novel and low reflective silicon surface fabricated by Ni-assisted electroless etching and coated with atomic layer deposited Al2O3 film

In this paper, nickel nanoparticles (Ni NPs) were deposited on planar silicon and pyramidal silicon wafers by the magnetron sputtering method, and then these Ni NP-covered samples were etched in a hydrofluoric acid, hydrogen peroxide, and deionized water mixed solution at room temperature to fabricate a low reflective silicon surface. An alumina (Al₂O₃) film was then deposited on the surface of the as-etched pyramidal sample by atomic layer deposition to further reduce the reflectance. The morphologies and compositions of these samples were studied by using a field emission scanning electron microscope attached to an energy-dispersive X-ray spectrometer. The surface reflectance measurements were carried out with a UV-Vis-NIR spectrophotometer in a wavelength range of 200–1100 nm. The SEM images show that the as-etched planar and pyramidal silicon samples were covered with many rhombic nanostructures and that some nanostructures on the planar silicon surface were ready to exhibit a flower-like burst. The reflectances of the as-etched planar and pyramidal silicon samples were 5.22 % and 3.21 % in the wavelength range of 400–800 nm, respectively. After being coated with a 75-nm-thick Al₂O₃ film, the etched pyramidal silicon sample showed an even lower reflectance of 2.37 % from 400 nm to 800 nm.     

Electrical and optical properties of indium tin oxide thin films grown by pulsed laser deposition

Indium tin oxide (ITO) thin films (200-400 nm in thickness) have been grown by pulsed laser deposition (PLD) on glass substrates without a post-deposition anneal. The electrical and optical properties of these films have been investigated as a function of substrate temperature and oxygen partial pressure during deposition. Films were deposited at substrate temperatures ranging from room temperature to 300 °C in O₂ partial pressures ranging from 0.1 to 100 mTorr. For 300 nm thick ITO films grown at room temperature in oxygen pressure of 10 mTorr, the electrical conductivity was 2.6᎒^-3 Q^-1cm^-1 and the average optical transmittance was 83% in the visible range (400-700 nm). For 300 nm thick ITO films deposited at 300 °C in 10 mTorr of oxygen, the conductivity was 5.2᎒^-3 Q^-1cm^-1 and the average transmittance in the visible range was 87%. Atomic force microscopy (AFM) measurements showed that the RMS surface roughness for the ITO films grown at room temperature was ~7 Å, which is the lowest reported value for the ITO films grown by any film growth technique at room temperature.     

Large Storage Window in a-SiNx/nc-Si/a-SiNx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

An a-SiNx/nanocrystalline silicon [（nc-Si）/a-SiNx] sandwiched structure is fabricated in a plasma enhanced chemical vapour deposition （PECVD） system at low temperature （250℃）. The nc-Si layer is fabricated from a hydrogen-diluted silane mixture gas by using a layer-by-layer deposition technique. Atom force microscopy measurement shows that the density of nc-Si is about 2 ×10^11 cm^-2. By the pretreatment of plasma nitridation, low density of interface states and high-quality interface between the Si substrate and a-SiNs insulator layer are obtained. The density of interface state at the midgap is calculated to be 1 ×10^10 cm^-2eV^-1 from the quasistatic and high frequency C - V data. The charging and discharging property of nc-Si quantum dots is studied by capacitance-voltage （C- V） measurement at room temperature. An ultra-large hysteresis is observed in the C - V characteristics, which is attributed to storage of the electrons and holes into the nc-Si dots. The long-term charge-loss process is studied and ascribed to low density of interface states at SiNx/Si substrate.     

Measurement of the KLL Dielectronic Recombination Resonances in He-like to C-like Kr Ions

The KLL dielectronic recombination processes of highly charged He-like to C-like Kr ions have been studied experimentally. The measurement was performed on the newly developed Shanghai electron beam ion trap （Shanghai-EBIT） facility. Characteristic x-rays from both dielectronic recombination and radiative recombination are detected as the electron beam energy is scanned through the resonances. The KLL resonant strengths obtained are 5.41×10^-19, 4.33×10^-19, 3.59×10^-19, 2.05×10^-19 and 0.98×10^-19 cm^2 eV for He-like to C-like Kr ions, respectively.     

Measurement of Density Inhomogeneity for Glass Pendulum

The density inhomogeneity of a glass pendulum is determined by an optical interference method. The relative variations of the densities over a volume with sizes of 5 × 5×5 mm^3 are （0.64 ± 0.97） × 10^-5 and （0.99 ± 0.92） × 10^-5 for the K9 glass and silica glass pendulum, respectively. These variations of densities contributing to the relative uncertainties of the Newtonian gravitational constant G are 0.20 ppm and 0.21 ppm in our experiment on measurement of G.