Enhancement of LED light extraction via diffraction of hexagonal lattice fabricated in ITO layer with holographic lithography and wet etching

A novel method for enhancing light extraction efficiency of LEDs via diffraction of the lattice fabricated in ITO layers of LEDs is proposed. The lattice fabrication process includes holographic lithography and wet etching. 3-beam interference holographic approach was used to fabricate large-area hexagonal lattice mask which can cover 2-inch semiconductor wafer, and acid etching was used to transfer the lattice structure into p-contact ITO layer. 1.4 fold enhancement of light output at 20 mA injection current was obtained from GaN-based LEDs in the primary experiment. The lattice fabrication process is rapid and cost-effective thus enabling industrial mass production of high brightness LEDs.     

High-Reflectivity A1GaN/A1N Distributed Bragg Reflector in Ultraviolet Region

Thirty-pair Alo.3 Gao.T N/A1N distributed Bragg reflectors centred at 32Ohm are designed and grown on sapphire substrates by metalorganic chemical vapour deposition. No cracks are observed in the main area of the 2-inch wafer except for about 4 mm margin under an optical microscope. Regular stack of alternating layers is shown by scanning electron microscopy. Clear two-dimensional growth steps and very low surface roughness are shown by atomic force microscopy （AFM）. Well-defined periodicity is shown by high resolution x-ray diffraction. High refiectivity of 93% at 313nm with a bandwidth of 13nm is obtained.     

WCDMA通信系统用高温超导滤波器的设计

用于WCDMA移动通信系统接收频段的高温超导滤波器,滤波器的电路芯片采用蒸镀于2英寸0.5mmMgO基片上的双面DyBa2Cu3O7高温超导薄膜,设计制作的滤波器工作中心频率为1930MHz,相对带宽为1.04%,最终滤波器的工作温度为72K,实际测试结果满足了设计的要求。     

Design and Fabrication of Polarization-Independent Micro-Ring Resonators

Origin of polarization sensitivity of photonic wire waveguides （PWWs） is analysed and the effective refractive indices of two different polarization states are calculated by the three-dimensional full-vector beam propagation method. We find that PWWs are polarization insensitive if the distribution of its refractive index is uniform and the cross section is square. An MRR based on such a polarization-insensitive PWW is fabricated on an 8-inch silicon-on-insulator wafer using 248-nm deep ultraviolet lithography and reactive ion etching. The quasi-TE mode is resonant at 1542.25nm and 1558.90nm, and the quasi-TM mode is resonant at 1542.12nm and 1558.94nm. The corresponding polarization shift is 0. 13 nm at the shorter wavelength and 0.04 nm at the longer wavelength. Thus the fabricated device is polarization independent. The extinction ratio is larger than 10dB. The 3dB bandwidth is about 2.Snm and the Qvalue is about 620 at 1558.90nm.     

大面积高深宽比硅微通道板阵列制作

利用光辅助电化学刻蚀方法,在厚度为425μm的5英寸硅片上,制作成深宽比达50以上的微通道板阵列结构.理论分析了影响微孔阵列形貌形成的关键因素,并结合实验条件,通过调整刻蚀电压值和根据莱曼模型修正实验电流值得到理想的孔壁形貌.结果表明,相比于目前在硅基上制作高深宽微结构的几种技术,光辅助电化学刻蚀方法能够实现孔壁光滑、面积大和深宽比高的微通道板阵列结构的低成本制作.     

CDMA移动通信系统用高温超导滤波器的研制

研制了一种基于CDMA移动通信系统接收频段的高温超导滤波器,滤波器的电路芯片采用蒸镀于2英寸0.5mm MgO基片上的双面DyBa2Cu3O7高温超导薄膜,设计制作的滤波器中心频率为830MHz,通带宽度为10MHz,最终滤波器的工作温度为70K,各项技术指标均满足了CDMA系统的要求.     

中国联通GSM900通信系统用高温超导滤波器的研制

设计了用于中国联通GSM900移动通信系统接收频段的高温超导滤波器,给出了滤波器的理论设计和模拟仿真结果,滤波器的微带电路制作于2英寸MgO基片双面DyBa2Cu3O7高温超导薄膜上,中心频率为912MHz,相对带宽为0.66%,滤波器的工作温度为75K,各项技术指标均满足了GSM900系统的要求。     

SHF频段超宽带高温超导滤波器的研制

针对超宽带通信系统的发展趋势,采用1/4波长短截线结构设计了一个工作于超高频(SHF)频段的超宽带高温超导滤波器,滤波器的中心频率为4.2 GHz,相对带宽为50%,讨论了1/4波长短截线结构滤波器的设计原理,给出了所设计超宽带滤波器的理论曲线、模拟仿真结果。实际制作的超宽带高温超导滤波器的测量曲线与模拟仿真曲线基本吻合,得到了满意的结果。     

一种通带平坦的粗波分复用/解复用器件的研制

随着粗波分复用(CWDM)系统在城域网和接入网中日益广泛的应用,人们对粗波分复用／解复用器的研究也逐渐展开。报道了一种8通道波长间隔为20nm的粗复用／解复用器。该器件基于阵列波导光栅(AWG)原理设计,利用平面光波导技术(PLC)制作,采用多模干涉输入结构和“S”形阵列波导结构,实现了较宽的通带宽度和较低的串扰。实验测得1dB带宽大于10nm,相邻串扰大于24dB,非相邻串扰大于32dB。介绍了其设计原理和制作过程,给出了光束传播法(BPM)数值模拟结果,并和实验结果进行了对比。     

Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography

We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm,and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications.     

Analysis of exchange bias effect of NiO+NiFe2O4 composites

Exchange bias (EB) and magnetic properties of ferrimagnetic (FI) NiFe₂O₄ and antiferromagnetic (AFM) NiO bulk composites, prepared by a chemical co-precipitation and post-thermal decomposition method from Fe-doped NiO matrix, have been investigated. Enhanced coercivities and shifted hysteresis loops are still observed for these samples after field cooling. But the vertical magnetization shifts are not observed. In comparison with the bulk samples, a NiO/10% NiFe₂O₄ nanocomposite was also prepared via direct mixture, in which both the horizontal and vertical shift in the hysteresis loops are observed at 10 K. The observed phenomena are explained in terms of interfacial exchange interaction between the two phases and the finite-size effect, respectively.     

利用Ag_2O/PEDOT:PSS复合缓冲层提高P3HT:PCBM聚合物太阳能电池器件性能的研究

利用Ag2O/PEDOT:PSS(聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐)作为复合阳极缓冲层,制备了P3HT:PCBM(聚(3-已基噻吩):富勒烯衍生物)聚合物太阳能电池器件,并通过改变氧化银插入层的厚度来分析复合缓冲层对器件性能的影响.实验发现,具有阳极缓冲层修饰的器件在退火处理后,光伏性能得到了改善.相比于单一PEDOT:PSS缓冲层的器件,Ag2O/PEDOT:PSS复合缓冲层可以增大器件的短路电流密度和外量子效率,使器件效率得到提高.分析表明,退火处理可以有效改善活性层的薄膜形貌,增加光的吸收和激子的解离,而较薄氧化银的引入,可以有效降低阳极处空穴的输运势垒,提高器件空穴收集效率,并能充当化学间隔层,提高器件光伏性能和稳定性.     

The effects of porous silicon on the crystalline properties of ZnO thin films

In the present work, ZnO was deposited on porous silicon substrates by sol-gel spin coating and rf magnetron sputtering. The porous silicon (PS) substrates were formed by electrochemical anodization on p-type (1 0 0) silicon wafer, and the starting material for ZnO was Zinc acetate dehydrate. Raman spectroscopy revealed the good quality of the porous silicon substrate. XRD analysis showed that highly (0 0 2) oriented ZnO thin films were formed. SEM, AFM and optical microscope have been used to understand the effects of the substrate on crystalline properties of the samples. The results indicated that the porous silicon substrate is beneficial to improve the crystalline quality in lattice mismatch heteroepitaxy due to its sponge-like structure.     

基于共耦合谐振单元结构的高温超导五工器

文章采用共耦合谐振单元结构设计制作了一款高温超导五工器, 五工器五个信道的工作频率分别为807.5 MHz、810.5 MHz、813.5 MHz、816 .5 MHz、819 .5 MHz, 每信道通带宽度均为1 MHz. 滤波器电路用镝钡铜氧(DyBCO) 双面超导薄膜制作, 衬底为3 英寸0.5 mm 厚度的氧化镁( MgO) 基片. 文章给出了高温超导五工器的等效电路、 理论曲线、 耦合参数、Sonnet 软件全波电磁场模拟仿真和实际测试曲线, 取得较为理想的结果     

Photochemical etching of GaAs with Cl2 induced by synchrotron radiation

The quality and efficiency of etching at room temperature is determined in the wavelength range from 105 nm to 300 nm by replicating a mask on a GaAs(100) wafer and by wavelength selection of synchrotron radiation with filters and a monochromator. A good anisotropy and selectivity is found for Cl₂ pressures from 10^–2 mbar up to 1.5 mbar, but above 3 mbar the selectivity is lost. Efficiencies for stimulation of the chlorination reaction and for desorption are separated and an optimal efficiency for stimulation of about 100 removed Ga and As atoms per photon is obtained around a wavelength of 122 nm at 1.5 mbar. Growth of reaction products on the surface occurs for short wavelengths and transport processes through layers up to a thickness of 350 nm are relevant. The efficiency and quality of etching can be improved by additional desorption with long wavelengths especially with lasers.     

Catalysis of dispersed silver particles on directional etching of silicon

Silver particles are dispersed on silicon by magnetron sputtering and post-annealing to investigate the catalytic effects of individual silver particles on wet etching of silicon surface. According to scanning electron microscopy, dispersed deep holes are present and the major etching direction is vertical to the surface of a Si(1 0 0) wafer or inclined to that on a Si(1 1 1) wafer. Our experiments indicate that the effect of the anisotropy of Si on directional etching is fundamental and the wafer resistivity and experimental process have important influence on the etching results. In addition, aggregation of silver particles and random horizontal etching on the surface of the wafer are caused by the local imbalance between the oxidant and HF. Our results enable better understanding of the catalytic effects of metal particles on silicon and are helpful to the preparation new silicon nanostructures.     

Enhancement of field emission properties of graphite flakes by producing carbon nanotubes on above using thermal chemical vapor deposition

In order to improve the field emission properties of the graphite flakes, the carbon nanotubes (CNTs) are produced on above without the metallic catalyst using mixtures of C₂H₂ and H₂ gases by thermal chemical vapor deposition. We spin the graphite solution on the silicon wafer and dry it, then synthesize the CNTs on the graphite flakes. We change the synthetic time to obtain the optimal conditions for enhancement of field emission properties of graphite flakes. The experimental results show that the density and quality of the CNTs could be controlled significantly by the synthetic time. Besides, the field emission properties of the treated graphite flakes are also affected greatly by it. The emission current density of the treated graphite flakes reaches to 0.5 mA/cm² at 3 V/μm, and the turn-on field is decreased from 7.7 to 1.9 V/μm after producing the CNTs on above.     

Crystallization characteristics of a middle CoFeB layer in a double MgO barrier magnetic tunnel junction

The crystallization characteristics of a middle CoFeB free layer in a magnetic tunnel junction (MTJ) with double MgO barriers were investigated by tunneling magnetoresistance (TMR) measurements of patterned cells across an 8-inch wafer. The MTJ structure was designed to have two CoFeB free layers and one bottom pinned layer, separated by MgO tunnel barriers. The observed resistance showed three types of TMR curves depending on the crystallization of the middle CoFeB layer. From the analysis of TMR curves, coherent crystallization of the middle CoFeB layer with the top and bottom MgO barriers was found to occur non-uniformly: About 80% of the MTJ cells in the wafer exhibited coherent crystallization of the middle CoFeB layers with the bottom MgO tunnel barrier, while others had coherent crystallization with the top MgO tunnel barrier or both barriers. This non-uniform crystallization of the middle CoFeB layer in a double MTJ was also clearly observed in tunneling electron microscopy images. Thus, control of the crystallization of the middle CoFeB layer is important for optimizing the MTJ with double MgO barriers, and especially for the fabrication of double barrier MTJ on a large area substrate.     

A Sensor-on-Chip Based on Second-Order Optical Effect of ZnO Nanowires

Strong second-order nonlinear effect of ZnO nanowires on a silicon wafer are demonstrated by using the hyper- Rayleigh scattering （FIRS） measurement. The large nonlinear effect can be attributed to the following two factors： （1） the large total dipole moment caused by high surface defect density and electrostatic potential gradient, （2） coherent effect due to high crystal quality of single nanowire. Moreover, the second-order nonlinear effect is found to become weaker when the chip is put into organic solvent due to modification of surface defect caused by organic molecules. The variation of second-order signal in the solvent indicated the potential applications of ZnO nanowires as a sensor-on-chip （SoC）.     

X-ray diffraction imaging investigation of silicon carbide on insulator structures

A new process was recently developed to manufacture silicon carbide on insulator structures (SiCOI). The process consists of several steps: (i) hydrogen implantation into an oxidised SiC wafer, (ii) bonding the oxidised surface of this wafer to an oxidised silicon substrate and (iii) high temperature splitting of a thin SiC film from the SiC wafer at the depth of the maximum hydrogen concentration and further annealing of the splitted film. The defect generation occurring during this process was investigated by synchrotron radiation X-ray diffraction topography, with special emphasis on to the last two steps. Various X-ray topographic techniques were used to characterise the lattice defects inside the SiC wafer, to quantify the strong lattice distortion near the edges of the splitted SiC film and to reveal SiC film regions lost during the splitting process. Moreover, we show that the strain fields of dislocations, observed in the silicon substrate after high temperature splitting and annealing of the splitted structure, induce a corresponding deformation in the thin SiC overlayer, despite the presence of the sandwiched oxide film. The defect density is much lower in the central region of the SiCOI structure. Received: 29 June 2001 / Accepted: 8 November 2001 / Published online: 20 March 2002