Anomalous Hall effect in granular Fe/SiO2 films in the tunneling-conduction regime

It is established that the Hall effect in Fe/SiO₂ nanocomposite films in the activational tunneling conduction range is anomalous, i.e., the Hall resistivity ρ_h is proportional to the magnetization and is due to the spin-orbit interaction. The parametric coupling of the Hall and longitudinal (ρ_xx) resistances ρ_h ∝ ρ _xx ^m (with temperature as the parameter) is characterized by a much lower value of the exponent m than in a uniform ferromagnetic metal. This circumstance is attributed to the characteristic features of the Hall effect mechanism in the hopping regime — in our case, the interference of the amplitudes of tunneling transitions in a set of three granules. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 2, 87–92 (25 July 1999)     

Concentration dependence of the anomalous Hall effect in Fe/SiO2 granular films below the percolation threshold

The anomalous Hall effect is studied on Fe_x(SiO₂)_1?x nanocomposite films with x<0.7 in the vicinity of the percolation transition (x _c ≈0.6). It is found that, as the transition is approached from the side of metallic conduction, the Hall angle nonmonotonically varies, passing through a minimum. A qualitative model for describing the concentration dependence of the anomalous Hall effect is proposed. The model is based on that of the conductivity of a two-phase system near the percolation threshold [9, 10]. The anomalous Hall effect is governed by two conduction channels: one of them (a conducting network) is formed by large metal clusters that are separated by narrow dielectric interlayers below the percolation threshold, and the other is represented by the dielectric part of the medium containing Fe grains; in this part of the medium, the anomalous Hall effect occurs through the interference of amplitudes from the tunneling junctions in a set of three grains. It is shown that, at x<x _c , the network may give rise to a “shunting” effect, which makes the effective Hall voltage even less than the Hall voltage of the dielectric component.     

Giant Hall effect in (GaAs)Fe granular films

A series of (GaAs)_1 − xFe_x (x: volume fraction) films with Fe granules embedded in GaAs matrix were prepared by magnetron sputtering. Hall Effect of the films was characterized. The largest saturated Hall resistivity of was observed in (GaAs)₃₀Fe₇₀ film at room temperature, which is over 2 orders larger than that of pure Fe, about 1 order larger than that of (NiFe)–(Al₂O₃) and (NiCo)–(SiO₂) granular films prepared under the same preparation conditions, and 150% larger than that of Ge₃₀Fe₇₀.     

Tunneling magnetoresistance and Hall effect of granular ferromagnetic metals

It is shown that two circumstances must be taken into account in order to describe the tunneling magnetoresistance and Hall effect in granular ferromagnetic metals: 1) the size variance of the metallic granules and 2) the percolation character of the tunneling conductivity of the system, determining the optimal (temperature-dependent) size of the granules through which current transport occurs. This complicates the dependences of the magnetoresistance and Hall resistance of the system on its magnetization and temperature. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 8, 579–584 (25 April 1999)     

Magnetorefractive effect in granular films with tunneling magnetoresistance

The magnetorefractive effect, consisting in a change of reflectivity under magnetization, has been observed in granular Co-Al-O metal-insulator magnetic films with tunneling magnetoresistance in the IR region. It is shown that this effect manifests itself most clearly in interference conditions, is even in magnetization, and reaches as high as 0.8% at frequencies of about 1100 cm^?, which exceeds both the linear equatorial Kerr and the even orientational magneto-optic effects by an order of magnitude.     

Magnetic properties, microstructures and magnetoresistance effect in Co/Alq3 granular films

A series of Co_x(Alq₃)_1−x granular films were prepared using the co-evaporating technique. HRTEM images show typical characteristics of granular films with the average size of 2-5 nm. It shows a gradual change from superparamagnetism to ferromagnetism with the rise of x. Negative magnetoresistance (MR) was observed, reaching −5.31% in x=0.44 sample at 30 K under the field of 10 kOe. The concentration dependence of MR and resistivity is also investigated. The inter-particle tunneling is believed to account for the negative MR effect.     

Hall effect and magnetoresistance of (SN)x films

Hall effect and electrical conductivity have been investigated between 77 K and 300 K and the magnetoresistance at 4.2 K for a number of (SN)_x films deposited at substrate temperatures between — 10 and 50°C. The small magnitude of the Hall mobility (? 1 cm² Vsec^?1 at 300 K) and its activated temperature dependence are interpreted in terms of a heterogenous model for (SN)_x films with thin depletion layers separating highly conductive islands. The hole concentration in these islands (p ≈ 10²¹ cm^?3, the microscopic mobility (μ ≈ 500 cm² Vsec^?1 at 4.2 K) and the temperatures dependence of μ are found to be close to values for (SN)_x crystals.     

Giant Hall effect in nonmagnetic granular metal films.

Nearly 3 orders of magnitude enhancement in the Hall coefficient is observed in Cu(x)-(SiO(2))(1--x) granular films. This large enhancement of the Hall coefficient not only is significantly larger than the prediction of the classical percolation theory, but also occurs at a metal concentration identified to be the quantum percolation threshold. Measurements of the electron dephasing length and magnetoresistance, plus the TEM characterization of microstructures, yield a physical picture consistent with the mechanism of the local quantum interference effect.     

The Hall effect in granular metal films near the percolation threshold

We have measured the Hall effect in the granular metals Au-SiO₂ and W-Al₂O₃ near their percolation thresholds. Our results indicate that when conduction is by electronic tunneling between isolated grains, the Hall coefficient is negative for both cermets. In the bulk, Au has a negative coefficient and W a positive one.     

FexSn100-x合金颗粒薄膜的反常霍耳效应

采用离子束溅射的方法制备了一系列不同原子比的FexSn100-x合金颗粒膜,系统地研究了该体系的反常霍耳效应.在该薄膜中发现了铁磁金属/非磁金属体系中最大的霍耳电阻率,讨论了不同原子配比、薄膜厚度对霍耳效应的影响.通过研究饱和霍耳电阻率ρxys同电阻率ρxx的关系,讨论了反常霍耳效应的机理.     

Hall effect in granular materials

We show that in granular materials the Hall coefficient cannot, in general, be used to estimate directly the density of carriers, since it will depend on the ratio of the mobility within the grains to the conductivity mobility. The Hall voltage is predominantly determined within the individual grains, where the mobility may be quite large. On the other hand, the conductivity mobility may be considerably smaller due to a strong potential barrier between grains. The Hall coefficient depends on the ratio of these mobilities as well as on the carrier density.     

Anomalous Hall effect in Cu and Fe codoped In2O3 and ITO thin films

We present a systematic study of the structure, magnetization, resistivity, and Hall effect properties of pulsed laser deposited Fe- and Cu-codoped In₂O₃ and indium-tin-oxide (ITO) thin films. Both the films show a clear ferromagnetism and anomalous Hall effect at 300 K. The saturated magnetic moments are almost the same for the two samples, but their remanent moments M_r and coercive fields H_C are quite different. M_r and H_C values of ITO film are much smaller than that of In₂O₃. The ITO sample shows a typical semiconducting behavior in whole studied temperature range, while the In₂O₃ thin film is metallic in the temperature range between 147 and 285 K. Analysis of different conduction mechanisms suggest that charge carriers are not localized in the present films. The profile of the anomalous Hall effect vs. magnetic field was found to be identical to the magnetic hysteresis loops, indicating the possible intrinsic nature of ferromagnetism in the present samples.     

Influence of sputtering pressure on the giant magnetoresistance and structure in Fe–Cu–Ni granular thin films

Composition, structure and giant magnetoresistance in Fe_xCu_yNi_z films prepared at different sputtering pressures were investigated. X-ray diffraction studies showed only Cu (1 1 1) peak from the Cu grain. The shifts in the d-spacing d₁₁₁ of Cu indicates a progressive substitution of Ni in the Cu lattice. Similar trends in d₁₁₁ of Cu observed for the samples prepared at different sputtering pressures indicate that the structural behaviour of the samples is nearly independent of the sputtering pressure. A significant enhancement of magnetoresistance (MR) for the samples sputtered at 0.001 mbar as compared to that sputtered at 0.02 mbar is attributed to the reduced role of residual gas impurities in the films upon lowering the sputtering pressure. An interesting observation is that the MR did not significantly decrease even with a large substitution of Ni in the Cu grains.     

Mechanism of grain-boundary magnetoresistance in Fe O films

The magnetotransport properties of magnetite films with different microstructures were investigated in order to identify prerequisites for the attainment of a large tunnelling magnetoresistance in polycrystalline samples. Epitaxial films on MgAl₂O₄, polycrystalline films on Al₂O₃ and rough MgAl₂O₄ substrates and a polycrystalline La_0.7Ca_0.3MnO₃ film on MgO were compared. Although grain boundaries induce a large high-field magnetoresistance in magnetite films, the low-field magnetoresistance characteristic for spin-polarized tunnelling was virtually absent in these samples. Two factors might be responsible for this behaviour: (1) grain boundaries in magnetite are conducting and do not form tunnelling barriers and (2) the spin-polarization near grain boundaries is suppressed due to non-stoichiometry. Received 15 April 2002 Published online 13 August 2002     

Planar Hall effect and magnetoresistance in Ni81Fe19 and Co square shaped thin films

Ni₈₁Fe₁₉ and Co thin films have been fabricated and their transport properties have been investigated for potential applications in ultra sensitive magnetic field sensors. The Ni₈₁Fe₁₉ films exhibit an anisotropic magnetoresistance (AMR) of 2.5% with a coercivity 2.5 Oe and the Co films exhibit an AMR of 0.7% with coercivity 11 Oe. Large planar Hall effect magnetoresistance values at room temperature are reported for both cases. An unbalanced Wheatstone bridge model is proposed to describe quantitatively the observed experimental Planar Hall Effect data.     

Fe15.16Ag84.84金属颗粒膜自旋极化相关的霍尔效应研究

采用磁控溅射法分别在玻璃和单晶硅衬底上同时制备了Fe15.16Ag84.84金属颗粒膜样品,并对样品的霍尔效应和霍尔系数RH随外加磁场H的变化关系进行了实验研究.观察到霍尔电压UH与外加磁场H的关系曲线呈现出自旋极化相关的反常现象,并与其磁电阻效应具有对应关系.基于自旋相关的散射理论对此作出了合理的解释.