Electroluminescence and internal screening of domains upon polarization switching of ferroelectric ceramics in a pulsed self-consistent field

This paper reports on the results of investigations into the electroluminescence induced by polarization switching of a ferroelectric ceramic material in an electric field with a rapidly increasing strength. A correlation between the polarization switching and luminescence kinetics is revealed. It is demonstrated that tunneling of electrons to the conduction band and impact ionization in field concentrators are the main mechanisms of generation of free charge carriers responsible for the electroluminescence and internal screening of switching domains.     

Electrophosphorescence and delayed electroluminescence from pristine polyfluorene thin-film devices at low temperature

Intrinsic long-lived electrophosphorescence and delayed electroluminescence from a conjugated polymer (polyfluorene) thin film is observed for the first time at low temperature. From bias offset voltage dependent measurements, it is concluded that the delayed fluorescence is generated via triplet-triplet annihilation. A fast and efficient triplet exciton quenching by charge carriers is found to occur in the active polymer layer of the working devices.     

Electroluminescence kinetics ofp-n-transitions with leakages

The kinetics of the decay in the electroluminescence intensity after gating a rectangular pulse of current in the p-n-transition with inhomogeneities, in particular, accumulations of dislocations is calculated. The basic assumptions are: on gating the rectangular pulse of current, a portion of the electrons injected into the thin p-region is extracted into the n-region, whereas the same number of electrons are injected into the inhomogeneity where they recombine without emission; the intensity of nonradiative recombination on the inhomogeneity is limited by drift of majority charge carriers (by leakages). It is shown that nonradiative recombination on inhomogeneities leads to nonexponential kinetics of electroluminescence, whose instantaneous relaxation time decreases with time. Odessa State Naval Academy, 8 Didrikhson St., Odessa, 270029, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 3, pp. 450–453, May–June, 1998     

LiF修饰阴极的双层有机电致发光器件的延时效应

基于载流子的注入、传输和复合过程,建立了双层有机发光器件的电致发光延时理论模型;讨论了电致发光延时随电压、注入势垒、内界面势垒、阳极区厚度及LiF缓冲层(BL)厚度的变化关系。结果表明:(1)低电压下,EL延时由复合过程主导,而高电压下,输运过程起着更重要的作用;(2)当δe/δh2时,M/O界面属于欧姆接触,电流是空间电荷限制的,注入势垒的变化对复合时间trec影响较大,当δe/δh2时,M/O界面成为接触限制,注入势垒的变化对trec几乎没有影响;(3)当内界面势垒超过0.3eV,H′h对trec的影响明显变弱,复合延迟时间基本上由电压和其它因素控制;(4)当电压较小时,随Lh/L的增大,trec增大;当电压超过某一值后,trec几乎不随Lh/L的变化而变化;(5)对于LiF/Ag阴极,在不同的偏压下,LiF的厚度在3.1nm左右时的复合时间最短,对应的EL延迟时间也最短,这与实验中从电致发光效率的角度得出的LiF最佳厚度一致。     

Electroluminescence of Thin Films of Organic Compounds (Review)

This paper is a brief review of investigations on the electroluminescence of organic compounds. It considers the background of the problem, the organic electroactive materials, the structures based on them and the technology of their preparation, the main physical characteristics of electroluminescence (spectra, polarization, volt-luminance and volt-ampere characteristics, kinetics, temperature dependence, quenching, efficiency and operation time, and ways of increasing them). A brief analysis of the investigations on injection of charge carriers, their transport, and the formation of excited states of molecules as well as applications and prospects of development of organic electroactive materials and structures is carried out.     

Breakdown of the homogeneity of weakly conducting liquids in high electric fields

A study of the structure of electrohydrodynamic flows shows that the electric charge carriers are ions that are practically frozen into the surrounding liquid. In other words, ions in weakly conducting liquids are capable of forming more or less stable structures whose viscoelastic properties are different from those of an uncharged liquid. One method of studying this effect is to investigate the velocity dispersion of ultrasound on charged supermolecular formations. The results of theoretical and experimental investigations of acoustic dispersion in liquid dielectrics subjected to prebreakdown electric fields are presented. A model problem of sound propagation in a liquid in which supermolecular structures have formed around elementary charge carriers is studied theoretically. Approximate formulas describing the dispersion of the acoustic phase velocity as a function of the electric field parameters and the electrophysical parameters of the liquid are obtained. The frequency dependence of the sound velocity is of a resonance character, the resonance frequency being determined by the electric charge density and the mass of the charged supermolecular structures. The experiments showed that the space charge affects the velocity of acoustic waves in liquid dielectrics. Zh. Tekh. Fiz. 67, 105–111 (October 1997)     

Specific features of magnetoabsorption resulting from exactly taking into account the electronic band spectrum

Effects related to the periodicity of the carrier dispersion relation in the reciprocal space are investigated. It is shown that, under certain conditions, magnetoabsorption in crystals exhibiting such dispersion significantly differs from the magnetoabsorption in crystals characterized by a parabolic dispersion relation for charge carriers.     

An Electroluminescence Delay Time Model of Bilayer Organic Light-Emitting Diodes

Based on the mechanism of injection, transport and recombination of the charge carriers, we develop a model to calculate the delay time of electroluminescence （EL） from bilayer organic light emitting diodes. The effect of injection, transport and recombination processes on the EL delay time is discussed, and the relationship between the internal interface barrier and the recombination time is revealed. ＂]~he results show that the EL delay time is dominated by the recombination process at lower applied voltage and by the transport process at higher applied voltage. When the internal interface barrier varies from 0.15 eV to 0.3 eV, the recombination delay time increases rapidly~ while the internal interface barrier exceeds about 0.3eV~ the dependence of the recombination delay time on applied voltage is almost undiversified, which may serve as a guideline for designing of a high-speed EL response device.     

Effect of transverse entrainment of charge carriers by the field of two electromagnetic waves in a semiconductor

The effect of transverse entrainment of charge carriers by two electromagnetic waves propagating in mutually perpendicular directions in a semiconductor with a parabolic dispersion law has been investigated. The dc component of the electric current density that appears in the direction perpendicular to the wave vectors has been calculated in the constant relaxation time approximation. It has been shown that the transverse dc current vanishes at a particular phase difference of the incident waves determined by the relaxation time of charge carriers in the material.     

Electroluminescence in anthracene crystals under time-varying electric fields

Electroluminescence in anthracene crystals has been systematically measured under time varying electric fields at various temperatures using a sodium electrode as the electron-injecting contact and a silver electrode as the hole-injecting contact. The results show that the electroluminescent brightness decreases with increasing frequency over the temperature range from ? 20 to 60°C; and that for a given frequency the brightness increases with increasing temperature, reaches a peak at a critical temperature, and then decreases with increasing temperature. The electroluminescence under a half-wave rectified sinusoidal a.c. field is brighter than that under a sinusoidal a.c. field of the same peak amplitude. There is a delay time between the application of the field and the appearance of electroluminescence, and this delay time decreases with increasing frequency and saturates at a value which may be associated with the transit time of the injected electrons across the specimen. All these results can be explained on the basis of the model that electroluminescence occurs when an electron space charge built up near the anode is sufficient to enhance hole injection from the anode.     

采用瞬态电致发光研究磷光掺杂体系发光瞬时过冲的发射机理

掺杂型有机电致发光器件中载流子累积、载流子复合等物理过程的深入了解对提高器件效率和稳定性有重要作用。通过瞬态电致发光测量可以研究掺杂型有机电致发光器件内部载流子累积。对结构为: ITO/NPB(30 nm)/host: Ir(ppy)₃/BCP(10 nm)/Alq₃(20 nm)/LiF(0.7 nm)/Al(100 nm)的器件分别研究主体材料以及客体掺杂浓度变化对有机掺杂型器件瞬态发光行为的影响。实验发现,当单脉冲驱动电压关闭后,只有TAZ: Ir(ppy)₃掺杂器件出现发光瞬时过冲现象,即发光强度衰减到一定时间时突然增强;且随着客体掺杂浓度的增加,瞬时过冲强度逐渐增强。通过分析TAZ: Ir(ppy)₃掺杂器件的瞬时过冲强度对主体材料与掺杂浓度的依赖关系,进一步发现,瞬时过冲效应强度主要受限于发光层内部积累的电子载流子;TAZ: Ir(ppy)₃发光层内电子容易被客体材料分子俘获并积累,电场突变时陷阱电子容易跳跃到主体材料上并与主体材料上积累的空穴形成激子,激子能量传递到客体材料上并复合发光继而出现发光强度的瞬时过冲现象。研究发光瞬时过冲行为可探究器件发光层内的载流子和激子的动态行为,有利于指导器件的设计,从而减少积累电荷的影响,提高器件的性能。     

Light-emitting silicon <Emphasis Type="Italic">pn</Emphasis> diodes

We report on the electrical and optical characteristics of silicon light-emitting pn diodes. The diodes are prepared by ion implantation of boron at high doses and subsequent high-temperature annealing. Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si. We present a rate-equation model for bound excitons, free excitons and free carriers which successfully describes the electrical and optical behaviour of the diodes at low temperatures. Especially, an electrical bistability observed below 50 K is shown to be based on the interplay of bound excitons, free excitons and free carriers in the active area of the diodes. The ionisation of bound excitons is the origin of an improved electroluminescence from the diodes at higher lattice temperatures. PACS 78.60.Fi; 78.55.Ap; 71.35.-y; 71.55.Cn     

Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell

The internal behaviors of carriers in InGaAsP single-junction solar cell are investigated by using electroluminescence (EL) measurements. Two emission peaks can be observed in current-dependent electroluminescence spectra at low temperatures, and carrier localization exists for both peaks under low excitation. The trends of power index α extracted from excitation-dependent EL spectra at different temperatures imply that there exists a competition between Shockley-Read-Hall recombination and Auger recombination. Auger recombination becomes dominant at high temperatures, which is probably responsible for the lower current density of InGaAsP solar cell. Besides, the anomalous "S-shape" tendency with the temperature of band-edge peak position can be attributed to potential fluctuation and carrier redistribution, demonstrating delocalization, transfer, and redistribution of carriers in the continuum band-edge. Furthermore, the strong reduction of activation energy at high excitations indicates that electrons and holes escaped independently, and the faster-escaping carriers are holes.     

Electroluminescence and its excitation mechanism of SiOx films deposited by electron-beam evaporation

Blue electroluminescence from SiO_x films deposited by electron beam evaporation was observed. This blue emission blueshifted from 450 to 410 nm with increasing applied voltage. The dependences of blue emission on applied voltage, frequency and conduction current were studied. Our experimental data support that blue emission from SiO_x films is the result of both recombination of charge carriers injected from opposite electrodes and impact excitation of hot electrons, the recombination of carriers injected is dominant in low and medium electric fields but hot electron impact excitation is dominant under high electric fields.     

Influence of spectral-dynamic effects in a laser and light guide on the dynamics of recirculation in a closed contour

The influence of stimulated emission delay, dynamic shift in generation frequency, residual charge effect, timing jitter of the radiation and excitation regime of an injection laser, as well as of dispersion in a fiber light guide on the data-internal storage time in an electrooptical contour is investigated. It is found that the storage duration of an interval depends strongly on the lifetime of nonequilibrium charge carriers, the simultaneous effect of a residual charge and jitter in an injection laser, as well as on the dc bias current of the laser. Belarusian State University, 4. F. Skorina Ave., Minsk, 220050, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 1, pp. 56–61, January–February, 1998.     

Effect of the postimplantation-annealing temperature on the properties of silicon light-emitting diodes fabricated through boron ion implantation into <Emphasis Type="Italic">n</Emphasis>-Si

The effect of the temperature of postimplantation annealing on the electroluminescence and the electrophysical and structural properties of light-emitting diodes fabricated by the implantation of boron ions into n-Si with a resistivity of 0.5 and 500 Ω cm is studied. All spectra contain strong electroluminescence (EL) peaks associated with band-to-band radiative transitions. An increase in the annealing temperature from 700 to 1100°C is accompanied by a monotonic increase in the quantum efficiency for the dominating EL peak and in the effective minority-carrier lifetime in the base of the light-emitting diodes and by the transformation of extended structural defects. Analysis of the experimental data shows that the extended structural defects formed are most likely to affect the EL properties via the formation or gettering of the radiative or nonradiative recombination centers rather than via preventing the removal of charge carriers to nonradiative recombination centers. The maximum internal quantum efficiency is reached after annealing at 1100°C (where extended structural defects are absent) and is estimated to be 0.4% at 300 K.     

Elektrolumineszenz an Zinksulfid-Einkristallen

Brightness waves observed at the anode of ZnS crystals on excitation with a.c. voltage, with and without superimposed d.c. voltage, show “green” maxima (5200 Å) at phases related to the phases of zero voltage or current. They disappear if the electrodes are isolated from the crystal. The observations can be interpreted by assuming hole injection as the cause of the electroluminescence and taking into account a decrease of recombination probability with increasing velocity of the charge carriers. At high voltages, a “blue” maximum (4770 Å) appears in phase with voltage maximum, and this over the whole crystal.     

Terahertz spectroscopy of AuFe spin glasses

The electrodynamic response of spin glasses (in the form of thin AuFe films) in the terahertz frequency range has been studied using backward-wave oscillator (BWO) spectroscopy (10–40 cm^?1) and optical ellipsometry (5000–33000 cm^?1) techniques at temperatures from 5 to 295 K. The room-temperature dynamic conductivity spectra of AuFe films are typical of metals and can be described within the framework of the Drude theory of conduction by free charge carriers. Changes in the microscopic parameters of charge carriers in AuFe films with increasing iron content, which are related to additional scattering of carriers on the impurity magnetic moments, have been studied on the quantitative level, including the carrier relaxation frequency and characteristic time, plasma frequency, and conductivity. It is established that the spin-glass phase at a temperature of ～5 K exhibits dispersion of the conductivity in the frequency range 10–40 cm^?1, which can be related to the appearance of a mobility gap in the subsystem of free electrons involved in the RKKY interaction between magnetic centers (Fe atoms).     

Electron and hole states in a narrow-band semiconductor InSb film in the presence of uniform electrostatic field

The states of charge carriers in a narrow-gap semiconductor InSb film, placed in a uniform electrostatic field, are considered theoretically. We consider the case when the heavy holes are described by the standard dispersion, and Kane’s dispersion law takes place for electrons and for light holes within the framework of two-band mirror model. For a certain range of values of the external field, explicit expressions for the energy spectrum and the envelope wave functions of charge carriers are obtained. Corresponding numerical estimations of allowed range of the external field are derived, for which the proposed approach allows exact analytical solutions.     

Photoluminescence and electroluminescence properties of ZnO films on p-type silicon wafers

A simplified n-ZnO/p-Si heterojunction has been prepared by growing n-type ZnO rods on p-type silicon wafer through the chemical vapour deposition method. The reflectance spectrum of the sample shows an independent absorption peak at 384 nm, which may be originated from the bound states at the junction. In the photoluminescence spectrum a new emission band is shown at 393 nm, besides the bandedge emission at 380 nm. The electroluminescence spectrum of the n-ZnO/p-Si heterojunction shows a stable yellow luminescence band centred at 560 nm,which can be attributed to the emission from trapped states. Another kind of discrete ZnO rod has also been prepared on such silicon wafer and is encapsulated with carbonated polystyrene for electroluminescence detection. This composite structure shows a weak ultraviolet electroluminescence band at 395 nm and a yellow electroluminescence band. These data prove that surface modification which blocks the transverse movement of carriers between neighbouring nanorods plays important roles in the ultraviolet emission of ZnO nanorods. These findings are vital for future display device design.