Experimental verification of the theory of the successive production of striations in a glow discharge

The properties of the wave of stratification in the plasma of the positive column in a glow discharge in neon are measured. The measurements are compared with the results of the theory of the successive production of striations and good agreement is found.

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In conclusion the author thanks M. Novák for help in measuring and evaluating the experimental results, and F. Kroupa and V. Krejí for carefully reading this paper and for valuable remarks.     

Four-baryon weak interactions with ΔS = 1 and SU (6) symmetry

Relations are found among the amplitudes for four-baryon processes with S = 1 under the assumption that the Lagrangian for s-wave weak interactions has the transformation properties of a component of the SU(6) 35-plet. In particular, it is found that the amplitudes for the¹S₀ ¹S₀ and³S₁ ³S₁ transitions for the p pn reaction are the same, within a sign.Translated from Izvestiya VUZ. Fizika, No. 10, pp. 70–77, October, 1969.     

Microwave relaxation and phenomenological damping in thin films

The relation between relaxation timeT, frequency swept resonance linewidth , and phenomenological damping is given by =2/T=(_x+_y), where _x,y = (H ₀+(N _x,y –N _z ) 4M _s ).N _x,y,z are sample demagnetizing factors,H ₀ is the effectivez-directed static field, 4M _s is the saturation induction, and is the gyromagnetic ratio. This fairly simple but general relation shows that the numerical relation between damping and relaxation at a given frequency can be quite different for in-plane and normally magnetized thin films. For thesame loss processes, so thatT andT are equal, is larger than . For permalloy films at 1 GHz, =15 . In addition, the conventional field swept linewidth, H=/, is simply related to only forN _x =N _y . Both and H are geometry dependent and do not provide an intrinsic measure of the relaxation. These results are confirmed by both resonance and transient response experiments. The large values of for large angle switching may also be partially explained by this analysis because the relevant magnetization motion is due to a demagnetizing field normal to the film plane.Visiting scientist on leave fromRaytheon Company, U.S.A. Supported by the Japan Society for the Promotion of Science.     

Some remarks on variable range hopping—in particular in the quantum Hall regime

An expression for the heat conductivity _xx is derived in the effective medium approximation. Mott type formulas are obtained for _xx and the Peltier coefficient _xx . Using percolation theory in a three-dimensional system the Wiedemann-Franz ratio was found to depend on the temperature like . The Mott type formulas were evaluated in a similar way for a two-dimensional system in the quantum Hall regime within the high-field percolation model. In contrast to previous calculations of the high field hopping conductivity _xx , the results are fully consistent with the experimental data on _xx and the density of states at the Fermi level. Finally, _xx is estimated which together with _xx and _xy =ie ²/h(i=0,1,2,...), determines both thermopower coefficients _xx and _xy .Dedicated to Professor W. Brenig on the occasion of his 60th birthday     

Bunching phenomena during electron injection into the betatron II. Theory of starting conditions

A theory of the azimuthal bunching of electrons injected into the betatron is presented and compared with the experiments described in [1]. The bunching is treated as a small perturbation of the stationary beam.The stationary injected beam is replaced by the corresponding equilibrium beam of the same perveance so that the angular velocity spread of the injected electrons is proportional to the square root of the injection perveance.Self-consistent wave solutions for the perturbation of the stationary solution are then found. Equations giving the amplification of small density or energy disturbances along the beam are derived. These disturbances are assumed to be introduced by density or velocity modulation of the injected beam. The condition for the spontaneous occurrence of bunching is deduced by assuming that the disturbances do not vanish even when there is no modulation of the injected beam. The resulting expressions for the threshold perveance and the rise-time of the disturbance are in reasonably good agreement with the experiments. Such agreement may be considered as further verification of the statement made in [1] that the amplification of the disturbances is caused by the negative mass instability mechanism.

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Der Einfluss der Plastischen Verformung durch Kaltwalzen auf die Koerzitivkraft

Zusammenfassung Es werden die Ergebnisse der Messungen der Koerzitivkraft von Eisen, Nickel und einiger Fe-Ni-Legierungen in Abhängigkeit von der plastischen Verformung durch Kaltwalzen angegeben. Gemessen wurde in Richtung parallel und senkrecht zur Walzrichtung. Die Ergebnisse werden insbesondere vom Gesichtspunkt des Einflusses der Versetzungen und der einachsigen induzierten Anisotropie diskutiert.

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Für die wertvollen Diskussionen und das Durchlesen der Arbeit danken wir den Kollegen J. Kaczér und V. Janovec, für die wirkungsvolle Hilfe bei den Messungen Koll. J. Grolmus.     

РАДИОМЕТРИЯ В ГЕОФИЗ ИКЕ

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Tunable UV radiation at short wavelengths (188–240 nm) generated by sum-frequency mixing in lithium borate

Sum-frequency mixing (₃=₁+₂) of UV laser radiation (₁=266 nm and 213 nm) and tunable coherent infrared light (₂=1.2–2.6 m) in lithium borate (LBO) generates radiation at short wavelengths (₃=188–242 nm). The UV radiation at ₁ is produced by the fourth and fifth harmonic of a pulsed Nd-YAG laser. The infrared light is generated with an optical parametric oscillator of beta barium borate. The phase-matching angle is measured as function of ₃ and compared with calculated values. For UV laser radiation at shorter wavelengths (173 nm₁213 nm) the calculations predict an extension of the tuning range of the sum-frequency generated at ₃ to wavelengths as short as the LBO transmission cutoff at 160 nm.     

Representations of state space transformations by Markov kernels

Every convex subset of a locally convex Hausdorff space (X, ) is equipped with the (-algebra generated by its-relatively open subsets. Within the set () of probability measures on two particular convex subsets are considered: (a) the set ^s () of probability measures with a separable support, and (b) the set ^c () of probability measures with a compact convex support. If is the base of a cone inX, then there exists an affine barycenter map from ^c () onto whose composition with the natural embedding of in ^c () yields the identity map on , and every-continuous affine transformation of can be represented by an affine transformation of ^c () that is induced by a Markov kernel. If (X, ) is a Banach space and is a closed, bounded, generating cone base inX that is contained in a hyperplane, then analogous results are obtained with respect to ^s (). Since the state spaces considered in noncommutative measure theory are cone bases and every change in time of an empirical system can be thought of as an affine transformation of the associated state space (Schrödinger picture), the existence of these representation theorems implies that the time evolution of general empirical systems can be described by dynamical concepts borrowed from classical probability theory.     

К ТЕОРИИ СПОНТАННОЙ Н АМАГНИЧЕННОСТИ ТОНКИХ СЛОЕВ. II. ЧАСТЬ)

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Effect of electrolytically deposited nickel films on the magnetic properties of iron-silicon alloy

The effect of electrolytically deposited nickel films on the magnetostriction, coercive force, residual induction, and the position with respect to each other of the magnetic susceptibility maxima _max. _max of specimens of iron-silicon alloy is investigated. It is shown that elastic extensions lead to a reduction in the spacing between the maxima _max, _max , and for certain loads this spacing disappears and only one maximum is observed.     

Dispersion of the permittivity of high-resistance semiconductors

We consider the mechanism of macroscopic polarization of semiconducting plates owing to the interaction of free carriers with an impurity level, in which role the level of the residual impurity of compensated semiconductors may appear. This mechanism, in combination with the diffusion-drift mechanism of polarization, results in additional dispersion of the real () and imaginary () parts of the dielectric permittivity, this being particularly significant for semiconductors of thickness smaller than the screening length L_s of free carriers. The character of the behavior of and depends on the relation between the Maxwell relation time _M and the times of carrier capture: _c and ejection _e by an impurity center. For _cetm and (/L_s) _e/_c1 the dispersion of and is the same as for thick plates (/L_s1). For _{c m e} and (/L_s)_e/_c1 the () curve has a characteristic kink in the region 1/_e, indicating additional absorption associated with the ejection of carriers into the surface region.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 11–13, October, 1981.     

Perturbations of flows on Banach spaces and operator algebras

For automorphism groups of operator algebras we show how properties of the difference _t – ' _t are reflected in relations between the generators , . Indeed for a von Neumann algebraM with separable predual we show that if _t – '_t 0.28 for smallt, then = 0(+)°^-1 where is an inner automorphism ofM and is a bounded derivation ofM. If the difference _t – ' _t =O(t) ast ; 0, then = + and if _t – ' _t 0.28 for allt then =. We prove analogous results for unitary groups on a Hilbert space andC ₀,C ₀ ^* groups on a Banach space.This paper subsumes an earlier work of the same title which appeared as a report from Z.I.F. der Universität BielefeldWith partial support of the U.S. National Science Foundation     

The effect of microsegregation on the generation of dislocations in zinc single crystals

The applicability of Tiller's considerations on the production of dislocations is proved. The density of dislocations appearing during impurity microsegregation increases with increasing rate of growth as a consequence of the corresponding change in the effective distribution coefficient. The real value of C at the microsegregation boundaries is at least twice as great as the average value of the concentration of impurities in the crystal in question.

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The room-temperature decomposition of metastable phases precipitated in the Al-Zn alloys at 200 °C

The room-temperature decomposition of metastable phases in the Al-Zn alloys (from 25 to 50 wt. % Zn) was studied by the transmission electron microscopy and X-ray diffraction. Metastable phases, i.e. G.-P. zones, _R-and -phases, were grown at 200 °C and their decomposition into equilibrium -phase at 20 °C was investigated. Ageing times comprised 1 to 999 days.Both the decomposition mechanism and the rate of decomposition of coherent phases were found to be dependent on the particle sizes and their density reached at 200 °C. The local vacancy supersaturation around the -nucleus in a dense system of G.-P. zones leads to an enhanced growth rate of such nucleus and thus to the formation of one large -precipitate at the expense of several neighbouring G.-P. zones. The elastic stress field around this -particle promotes the further nucleation and growth of -precipitates and leads to their gradual spread throughout the matrix. The decomposition of intermediately sized _Rprecipitates results in the development of -precipitates of comparable sizes nucleated on the array of misfit dislocations at the periphery of _R-precipitates. The cooperative effect between neighbouring particles does not influence the decomposition of large _R-precipitated which split then into several smaller -particles. The rate of G.-P. zones or _R to -decomposition increases with the increasing sizes of transition precipitates and with the zinc content of the alloy. The kinetics of to -decomposition was found to be independent both on the annealing time at 200 °C and on the investigated alloy composition. This can be attributed to the constant density of misfit dislocations as nucleation sites for -precipitates along the -matrix interface and to the large mutual separation of -precipitates in all these alloys.In conclusion we would like to express our thanks to Doc. Dr. V.Syneek, CSc. for his valuable discussions and to Ing. V.íma for the preparation of Al-Zn alloys. Our thanks are also due to Mr. Z.iký for his help in the X-ray diffraction measurement and to P.Vyhlídka for the careful chemical analyses of the investigated alloys.     

Металлографические методы определепия нлотности дислокаци й В монокристаллах германия

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Electronic processes andZ centres in NaCl and KC1 crystals

The paper gives the experimental results of the team-work study of coloured pure and Ca doped NaCl and KC1 crystals. The mechanism of the formation ofR centres by coagulation ofF centres and of the formation ofZ centres fromF centres, cation vacancies and Ca ions is discussed. An alternative model forZ ₃ centres is proposed. The possible connections between physical and chemical behaviour are indicated.

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Z- NaCl 1

NaCl KCl . R- F- Z- F-, Ca. Z ₃-. .

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This work was presented by the courtesy of Prof. R. Maurer at the Symposium on Color Centers, Corvallis, Oregon (1959).

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The authors wish to express their gratitude to K. Suk, K. Listoová and M. Javrková for carefully carrying out the measurements and I. Kunzlová and L. Nováková for preparing the crystals.     

Quantum mechanics without the projection postulate

I show that the quantum state can be interpreted as defining a probability measure on a subalgebra of the algebra of projection operators that is not fixed (as in classical statistical mechanics) but changes with and appropriate boundary conditions, hence with the dynamics of the theory. This subalgebra, while not embeddable into a Boolean algebra, will always admit two-valued homomorphisms, which correspond to the different possible ways in which a set of determinate quantities (selected by and the boundary conditions) can have values. The probabilities defined by (via the Born rule) are probabilities over these two-valued homomorphisms or value assignments. So any universe of interacting systems, including those functioning as measuring instruments, can be modelled quantum mechanically without the projection postulate.     

Bremsstrahlung spectrum in beta decay

The spectrum of the bremsstrahlung due to the complete slowing down in aluminium of beta particles belonging to the continuous spectrum, was calculated for an arrangement, in which the beta emitter is completely enclosed in an absorber. The Bethe-Heitler cross-section, corrected by an empirical factor, was used. A table is given which makes it possible to calculate bremsstrahlung spectra of beta emitters with their maximal energy between 0·6 MeV and 2·0 MeV; the necessary additional calculations are quite simple. The error in the calculation is practically determined by the uncertainty in the determination of the cross-section and is equal to about 10%.

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АНТИПРОТОННАЯ СХЕМА β-РАСПАДА

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