Some optical properties of amorphous and crystalline antimony trisulphide thin films

The change in optical properties accompanying the amorphous crystalline transition has been studied for antimony trisulphide thin films. The real and imaginary parts of the dielectric constant are found to be much lower for amorphous films at lower photon energies, possibly because of a large number of defect states which would mostly disturb the top of the valence band and the conduction band comprised, respectively, of chalcogen lone pair and antibonding states. The crystalline material shows some structure in the imaginary part of the dielectric constant that corresponds to interband transitions, and apparently the direct band edge is at 1.88 eV. In the edge region the power law absorption has been observed in the amorphous material from which the extrapolated optical gap has been found to be 1.7 eV.     

Electrical conduction in coevaporated antimony trisulphide films

Antimony trisulphide films were prepared by the three temperature method. The temperature dependence of conductivity for films prepared at different substrate temperatures were measured. The I–V characteristics of the Sb-Sb₂S₃-Sb systems studied showed a space charge limited conduction indicating a I ∝ V² /d³ dependence. The trap density and the trap energy level were determined.     

Structural and optical properties of thermally evaporated antimony telluride thin films

Antimony telluride thin films were prepared on the well-cleaned glass substrates under a pressure of 10 – 5 torr by thermal evaporation method. The thicknesses of the films were measured using Multiple Beam Interferometer (MBI) technique. The structure of the sample was analyzed by X-ray diffraction technique. The film attains crystalline structure as the temperature of the substrate is increased to 373 K. The d spacing and the lattice parameters of the sample were calculated. Optical behavior of the film samples with the various thicknesses was analyzed by obtaining their transmittance spectra in the wavelength range of 400 – 800 nm. The transmittance is found to decrease with increase in film thickness and also it falls steeply with decreasing wavelength. The optical constants were estimated and the results are discussed. The optical band gap energy decreases with increase in the film thickness. The optical transition in these films is found to be indirect and allowed. Paper presented at the 2nd International Conference on Ionic Devices, Anna University, Chennai, India, Nov. 28–30, 2003.     

混沌介质光学常数测量

对基于漫射理论并应用CCD相机测量混沌介质的光学常数进行了实验研究.提出采用漫射中心环带约束法来提高逆向求解光学常数的精确性,以及采用在通过光的入射点和漫射中心的直线上截取一维原始数据的方法来提高算法的计算效率.以Intralipid脂肪乳剂作为混沌介质,对方法进行了实验验证.结果表明,本文提出的方法是可行的.     

Thickness effect on the structural and optical constants of stibnite thin films prepared by sulfidation annealing of antimony films

This paper deals with some physical properties of antimony sulphide Sb₂S₃ thin films obtained by an annealing process in sulphur vapors at 300 °C of Sb thermal evaporated thin films deposited on glass substrate. The crystal structure and surface morphology were investigated by both XRD and AFM techniques. This structural study shows that Sb₂S₃ thin films were well crystallized in orthorhombic structure and some parameters such as the lattice parameter, crystallite size, microstrain and degree of preferred orientation have been reported and correlated with the effect of crystallite size. On the other hand, the refractive index and the extinction coefficient were discussed in terms of the Forouhi–Bloomer model. The optical band gap was found to range from 1.75 to 2.23 eV. Finally, the analysis of the optical parameters extracted from the Urbach–Martienssen and Forouhi–Bloomer models lead to some explanations of the correlations between the structural properties in terms of the crystallite size and optical ones.     

Investigation of nonlinear optical parameters of zinc based amorphous chalcogenide films

Third order nonlinear optical properties of amorphous Zn_x–S_y–Se_100−x−y chalcogenide films have been investigated using single beam transmission z-scan technique at 1064 nm of Nd:YAG laser. Measurement of optical properties of amorphous Zn_x–S_y–Se_100−x−y chalcogenide films prepared by thermal evaporation technique has been made. X-ray diffraction patterns of chalcogenide films confirm the amorphous nature. Optical band gap (E_g) has been estimated using Tauc's plot method from transmission spectra that is found to decrease with increase in content due to valence band broadening and band tailing the system. Nonlinear refractive index (n₂), nonlinear absorption coefficient (β) and third order nonlinear susceptibility (χ³) of chalcogenide films have been estimated. Self-focusing effect has been observed in closed aperture and reverse saturable absorption in open aperture scheme. Limiting threshold and dynamic range have been calculated from optical limiting studies. The increase in nonlinearity with increase in Zn content has been observed that is understood to be due to decrease in band gap on Zn doping. High nonlinearity makes these films a potential candidate for waveguides, fibers and two photon absorption in optical limiters.     

Annealing-induced optical and sub-band-gap absorption parameters of Sn-doped CdSe thin films

Thin films of Sn-doped CdSe were prepared by thermal evaporation onto glass substrates in an argon gas atmosphere and annealed at different temperatures. Structural evaluation of the films was carried out using X-ray diffraction and their stoichiometry studied by energy-dispersive X-ray analysis. The films exhibit a preferred orientation along the hexagonal direction of CdSe. The optical transmittance of the films shows a red shift of the absorption edge with annealing. The fundamental absorption edge corresponds to a direct energy gap with a temperature coefficient of 3.34 × 10^?3 eV K^?1. The refractive index, optical conductivity and real and imaginary parts of the dielectric constants were found to increase after annealing. The sub-band gap absorption coefficient was evaluated using the constant photocurrent method. It varies exponentially with photon energy. The Urbach energy, the density of defect states, and the steepness of the density of localized states were evaluated from the sub-band-gap absorption.     

Thickness dependent optical dispersion parameters and nonlinear optical properties of nanostructured Cr doped CdO thin films

Cr doped CdO thin films were deposited on glass substrates by reactive DC magnetron sputtering with varying film thickness from 250 to 400 nm. XRD studies reveal that the films exhibit cubic structure with preferred orientation along the (2 0 0) plane. The optical transmittance of the films decreases from 92 to 72%, whereas the optical energy band gap of the films decreased from 2.88 to 2.78 eV with increasing film thickness. The Wemple–DiDomenico single oscillator model has been used to evaluate the optical dispersion parameters such as dispersion energy (E_d), oscillator energy (E_o), static refractive index (n_o) and high frequency dielectric constant (ε_∞). The nonlinear optical parameters such as optical susceptibility (χ⁽¹⁾), third order nonlinear optical susceptibility (χ⁽³⁾) and nonlinear refractive index (n₂) of the films were also determined.     

Microstructural parameters and optical constants of ZnTe thin films with various thicknesses

Different thickness of polycrystalline ZnTe films have been deposited onto glass substrates at room temperature by vacuum evaporation technique. The structural characteristics studied by X-ray diffraction (XRD) showed that the films are polycrystalline and have a zinc blende (cubic) structure. The calculated microstructure parameters revealed that the crystallite size increases and microstrain decreases with increasing film thickness. The transmittance and reflectance have been measured at normal and near normal incidence, respectively, in the spectral range 400-2500 nm. For ZnTe films of different thicknesses, the dependence of absorption coefficient, α on the photon energy showed the occurrence of a direct transition with band gap energy (For ZnTe films of different thicknesses) confirming the independency of deduced energy gap on film thickness. The refractive indices have been evaluated in terms of envelope method, which has been suggested by Swanepoul in the transparent region. The refractive index could be extrapolated by Cauchy dispersion relationship over the whole spectra range, which extended from 400 to 2500 nm. It was observed that the refractive index, n increased upon increasing the film thickness up to 508 nm, lying within the experimental error for further increases in film thickness.     

一种获得半导体薄膜光学参数的方法

实现薄膜光学参数的简便测量对于薄膜的制备和应用具有重要意义。引入适用于半导体材料的Forouhi_Bloomer模型,用其表征薄膜折射率与色散的关系。考虑到粗糙度的影响,假设薄膜厚度服从正态分布,给出了模拟退火法与迭代法相结合、由可见光光谱测定薄膜光学参数的方法。作为尝试,以硅系薄膜为例进行了计算。结果表明,获得的厚度与用椭偏仪测量的结果较为吻合。该方法适用于研究和测量半导体薄膜的光学性能和膜厚,具有很高的实用价值。     

Role of various LB parameters on the optical characteristics of mixed Langmuir-Blodgett films

This communication reports the spectroscopic characterizations of mixed Langmuir-Blodgett (LB) films of non-amphiphilic N,N-bis (2,5-di-tert-butylphenyl)- 3,4,9-perylenedicarboximide (DBPI) molecules, mixed with polymethyl methacrylate (PMMA) and stearic acid (SA). J- aggregates of DBPI molecules in the mixed LB films have been confirmed by UV-Vis absorption spectroscopic study. Formation of organized structure of molecular stacking in the mixed LB films gives rise to the strong excimeric emission, which is manifested by a broad structureless band in the longer wavelength region of the fluorescence spectra and is confirmed by excitation spectroscopic study. A weak hump at around 576 nm due to monomeric emission is observed in the fluorescence spectra of 0.1 M of DBPI-PMMA mixed LB films of lower number of layers. The intensity of the 0-0 band at 530 nm in the fluorescence spectra is observed to be a function of the molefraction, number of layers, surface pressure of lifting and the matrix materials.     

Microstructure parameters and optical properties of cadmium ferrite thin films of variable thickness

CdFe₂O₄ thin films of different thicknesses were deposited onto glass substrates by the thermal evaporation technique. Their structural characteristics were studied by X-ray diffraction (XRD). The microstructure parameters, crystallite size, and microstrain were calculated. It is observed that both the crystallite size increases and microstrain increase with increasing with the film thickness. The fundamental optical parameters like absorption coefficient and optical band gap are calculated in the strong absorption region of transmittance and reflectance spectrum. The refractive indices have been evaluated in terms of the envelope method, which has been suggested by Swanepoel in the transparent region. The refractive index can be extrapolated by the Cauchy dispersion relationship over the whole spectra range, which extended from 400 to 2500 nm. The refractive index, n, increases on increasing the film thickness up to 733 nm and the variation of n with higher thickness lies within the experimental errors.     

Measuring the optical parameters of thin films by p-polarized laser beams

The refractive index n_f, extinction coefficient k_f and thickness d_f of a dip coated film are measured by using p-polarized laser beams. A sample is oblique illuminated with a p-polarized laser beam, and then two reflected beams, from the front and back surfaces, are received with a detector. After measuring their intensity ratio versus the angle of incidence, it is convenient to obtain the parameters of the film by means of data fitting. The films of polymethyltriethoxy silane (PMTES), which were made on a BK-7 glass substrate by dip coating, were measured. The method is non-contact, non-destructive and has the advantages of simplicity of both equipment and understanding. It is also shown that the values measured by this method are coincident with those measured by ellipsometry.     

The quantum size effect in thin antimony films

Thin antimony films have been epitaxially deposited at 350K onto cleavage surfaces of mica at different residual gas pressures between 10^?5 and 10^?9 torr, and their resistivity ? measured as a function of film thicknessd≦500Å at temperaturesT=110K andT=300K. The ?(d) characteristics of films deposited at residual gas pressures of about 10^?6 torr with condensation rates of about 1Å/s showed generally decreasing slopes as film thicknesses increased, but irregularities in detail. The ?(d) characteristics of films deposited at 10^?8 torr with the same condensation rate decreasing with increasingd, too, show no such irregularities but very small regular variations of ?(d) with constant oscillation length Δd between the maxima, and decreasing amplitudes with increasingd. These variations are better recognizable in a modified ?(d) graph. We tend to interprete these variations by the quantum size effect as we found oscillation lengths and amplitudes compatibel with theory.

     

The quantum size effect in thin antimony films

Thin antimony films have been epitaxially deposited at 350K onto cleavage surfaces of mica at different residual gas pressures between 10⁻⁵ and 10⁻⁹ torr, and their resistivity ∂ measured as a function of film thicknessd≦500? at temperaturesT=110K andT=300K. The ∂(d) characteristics of films deposited at residual gas pressures of about 10⁻⁶ torr with condensation rates of about 1?/s showed generally decreasing slopes as film thicknesses increased, but irregularities in detail. The ∂(d) characteristics of films deposited at 10⁻⁸ torr with the same condensation rate decreasing with increasingd, too, show no such irregularities but very small regular variations of ∂(d) with constant oscillation length Δd between the maxima, and decreasing amplitudes with increasingd. These variations are better recognizable in a modified ∂(d) graph. We tend to interprete these variations by the quantum size effect as we found oscillation lengths and amplitudes compatibel with theory.     

Measurements on high-bandwidth optical waveguides

Frequency response measurements on six high-bandwidth optical waveguides made by the doped deposited silica process are reported. One of these had an extrapolated bandwidth in excess of 3 GHz-km. From plane wave measurements the actual or optimum waveguide profile may be determined given the other. Data taken on a germanium borosilicate waveguide is in agreement with interference measurements.     

Effect of some preparative parameters on optical properties of spray deposited iridium oxide thin films

Optical properties of iridium oxide films fabricated by the spray pyrolysis technique (SPT) have been investigated. The transmission and reflection spectra of the sprayed films were measured by using a double-beam spectrophotometer in the wavelength range from 200 to 2500 nm. Influences of the preparative parameters; namely, substrate temperature (350-500 °C) and solution molarity (0.005-0.03 M), on the optical characteristics were examined. The solution molarity of the iridium chloride solution was varied so as to prepare iridium oxide thin films with thicknesses ranging from 160 to 325 nm. Some important characteristics of optical absorption, such as optical dispersion energies, the dielectric constant, the ratio of the number of charge carriers to the effective mass, the single oscillator wavelength, and the average value of the oscillator strength, were evaluated. The value of the refractive index was found to depend on the chemical composition as well as the degree of stoichiometry of IrO₂. The values obtained for the high frequency dielectric constant through two procedures are in the range of 2.8-3.9 and 3.3-4.6 over the relevant ranges of the substrate temperature and solution molarity, respectively. Analysis of the energy dispersion curve of the absorption coefficient indicated a direct optical transition with the bandgap energy ranging between 2.61 and 2.51 eV when the substrate temperature increases from 350 to 500 °C.