Vibrational Excitation of N2(B,C) and N+2(B) States in N2 and N2 – H2 Flowing Microwave Discharges

The ro‐vibrational spectra of N₂ microwave discharges have been analysed by emission spectroscopy. It is deduced the rotational and vibrational temperatures of N₂ states. The characteristic of vibrational temperature Θ₁ of the N₂ (X, v) ground state has been specifically determined.It has been found that the N₂ (C, B, v') and N⁺₂ (B, v') radiative states are directly excited by electron collisions on the N₂ (X,v) ground state at a N₂ gas pressure of 0.1 Torr (discharge tube of 5 mm I.D, microwave power 100 Watt) with a Θ₁ value near 10⁴ K. At higher gas pressure up to 5 Torr, the N₂ (C, v') states remain alone to be mainly excited by electron collisions on N₂ (X, v). It is considered the excitations of the N₂ (B, v') states by collisions of electrons and N₂ (X,v > 4) vibrational molecules on the N₂ (A) metastable states.With x < 9% H₂ into N₂, it is observed an increase of N₂, 2^nd pos intensity, resulting of an increase of high energy electrons. Inversely, the N₂, 1^st pos intensity decreased, partly following the decrease of low energy electrons (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Determination of N and O – Atom and N2(A) Metastable Molecule Densities in the Afterglows of N2 and N2‐O2 Microwave Discharges

Early afterglows of N₂ and N₂‐O₂ flowing microwave discharges are characterized by optical emission spectroscopy. The N and O atom and N₂(A) metastable molecule densities are determined by optical emission spectroscopy after calibration by NO titration for N‐atoms and measurements of NO and N₂ band intensities for O‐atoms and N₂(A) metastable molecules. By using N₂ tanks with 50 and 10 ppm impurity, it is determined in the afterglow an O‐ atom impurity of 150‐200 ppm. Variations of the N and O‐atom and N₂(A) metastable molecule densities are obtained in the early afterglow of N₂–(9·10^–5–3·10^–3)O₂ gas mixtures. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

First-principles investigation on N/C co-doped CeO_2

The N and C doping effects on the crystal structures, electronic and optical properties of fluorite structure CeO_2 have been investigated using the first-principles calculation. Co-doping these two elements results in the local lattice distortion and volume expansion of CeO_2. Compared with the energy band structure of pure CeO_2, some local energy levels appear in the forbidden band, which may facilitate the light absorption. Moreover, the enhanced photo-catalytic properties of CeO_2 were explained through the absorption spectra and the selection rule of the band-to-band transitions.     

Determination of N and O‐atoms and N2 (A) Metastable Molecule Densities in the Afterglows of N2‐H2, Ar‐N2‐H2 and Ar‐N2‐O2 Microwave Discharges

Early afterglows of N₂‐H₂, Ar‐N₂‐H₂ and Ar‐N₂‐O₂ flowing microwave discharges are characterized by optical emission spectroscopy. The N and O atoms and the N₂ (A) metastable molecule densities are determined by optical emission spectroscopy after calibration by NO titration for N and O‐atoms and measurements of NO and N₂ band intensities. If an uncertainty of 30% is estimated on N‐atomic density, an inaccuracy of one order of magnitude is obtained on the O and N₂ (A) densities. In N₂‐(0.05‐2.5%)H₂ and Ar‐(1‐50%)N₂‐(0.05‐2.5%) H₂ gas mixtures, the O‐atoms are coming from O₂ impurities in the discharge. Concentrations of N and O‐atoms and of N₂ (A) densities are compared to the ones obtained in Ar‐(5‐50%)N₂‐(0.2‐2.5%) O₂ gas mixtures in which a controlled amount of O₂ is added. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

(C_5H_(11)N_2)~+和(C_7H_(12)N_2)~(2+)的NMR研究

结合1H NMR,13C NMR谱,分别对钨、钼配合物{WO2(C10H6O2)2(C5H11N2)2[H2N(CH2)3NH2]}3(1),{(C5H11N2)2[H2N(CH2)3NH2][MoO2(C10H6O2)2]}(2),{(C7H12N2)2[MoO2(C10H8O2)2]}(3)晶体结构中小分子环进行了归属.其中,配合物1和2中(C5H11N2)+的NMR研究证实了六元环由1,3-丙二胺和乙腈化合而成,配合物3中(C7H12N2)2+的NMR谱图证实了七元环由乙二胺和乙酰丙酮化合而成,并且推导出这些亲核加成-消除反应的反应机理.配合物1~3中的小分子环的合成在其它体系中尚未见报导,而在合成它们的反应中作为新产物随主体晶体析出,并由晶体结构解析和NMR得到了证实.     

远紫外光谱遥感反演热层O/N2技术研究

磁暴会引起热层中性成分O和N2的显著变化。为研究热层中性成分随磁暴的变化规律,利用TIMED卫星搭载的全球紫外成像仪探测数据,借助AURIC完成了观测角和太阳天顶角归一化,提出了一种热层O/N2的反演方法。通过O/N2追踪太阳风暴的发生过程,分析了2002年9月29日到10月4日的O/N2数据发现受磁暴影响O/N2发生衰减,且衰减范围由极区向赤道方向延伸。     

Ni(C3H10N2)2NO2(ClO4)晶体的ESR研究

报道了Ni(C₃H₁₀N₂)₂NO₂(ClO₄)晶体在T=1.5K温度和W波段的ESR实验.建立了d⁸离子基态³A₂(F)的零场分裂参量D,E,和g因子与斜方对称晶场势参量间的关系,并应用于Ni(C₃H₁₀N₂)₂NO₂(ClO₄)晶体.计算值与实验数据符合很好,表明所给关系式是合理的.     

化合物(Et4N)2[Pd2(mp)2(μ-mpH)2]的NMR研究

采用¹H-¹H COSY,HMQC、HMBC等2D NMR技术对化合物(Et₄N)₂[Pd₂(mp)₂(μ-mpH)₂]进行¹H、¹³C NMR谱数据分析与归属,表明它在DMSO溶液中仍保持原有固体状态的分子结构.     

N2O在Yn(n=2-7)团簇表面的自然解离

运用第一性原理,研究了N2O在Yn (n=2-7) 团簇表面吸附机理。结果表明：N2O吸附于 Yn (n=2-7)团簇表面时,不需要克服任何能垒而自然解离。吸附导致了主团簇Y原子平均键长增大,体系表现出了巨大的吸附能 (约为8-10eV)。吸附对体系化学活性的影响具有一定的尺寸依赖性。在所有团簇中,Y6N2O吸附能最大,化学性质最稳定。     

N_2O在Y_n(n=2-7)团簇表面的自然解离

运用第一性原理,研究了N2O在Yn(n=2-7)团簇表面吸附机理.结果表明:N_2O吸附于Yn(n=2-7)团簇表面时,不需要克服任何能垒而自然解离.吸附导致了主团簇Y原子平均键长增大,体系表现出了巨大的吸附能(约为8-10 e V).吸附对体系化学活性的影响具有一定的尺寸依赖性.在所有团簇中,Y_6N_2O吸附能最大,化学性质最稳定.     

N_2在单原子催化剂Ir/MoS_2表面上吸附的第一性原理研究

利用密度泛函理论,在slab模型下,研究N_2在单原子催化剂Ir_1/MoS_2上的吸附行为,结果表明,N_2的优势吸附位为Ir原子的顶位,构型为垂直向下,吸附能达到1.57 eV,是化学吸附.电子结构说明主要是吸附N原子的2Pz轨道在Z方向上与Ir的5d_z~2、5d_(xz)、5d_(yz)、6P_z混合得以使N_2稳定吸附在Ir原子上.     

H2-O2(N2)混气着火过程非线性特性研究

本文采用基元反应模拟H2-O2(N2)混合气体的着火过程,得到了不同散热和不同燃料-氧化剂初始浓度比条件下着火临界曲线。结果表明: H2/O2摩尔比相同时,不同散热条件下的着火临界曲线非常相似,可近似看成同一曲线在第二区的“延伸线”上滑移。临界曲线第二区的P—T关系符合2k1=ks[Ms]。散热对着火极限的影响和着火延迟时间有密切关系,在临界曲线第二区延迟时间最小,导致散热对该区的影响最弱,从而使着火临界曲线非常相似。     

N2（A）及N（2D）对IF（X）的传能研究

在微波放电系统中,对NH_3-F-F_2-CF_3I体系进行研究,结果表明,向IF(X)传能的诸多媒介中,N_2(A)及N(~2D)起着主要作用,并且这一结论在经微波激发后的N_2与CF_3I的直接反应中得到了进一步证实。     

Cs(6P)+(Ne,N2)碰撞能量转移

在气体样品池条件下,研究了Cs(6P3/2) (Ne,N2)碰撞能量转移过程.用调频半导体激光器激发Cs原子至Cs(6P3/2)态,在不同的Ne或N2气压下,测量了直接6P3/2→6S1/2荧光和转移6P1/2→6S1/2荧光,对于6P3/2与Ne的碰撞,电子态能量仅能转移为Ne原子的平动能.在与N2的碰撞中,向分子振转态的转移是重要的.利用速率方程分析,可以得到碰撞转移速率系数,对于Ne,6PJ精细结构碰撞转移速率系数为1.45×10-12cm3·s-1.对于N2,测量6P Ne和6P N2二种情况下荧光的相对强度比,确定精细结构速率系数为1.64×10-12cm3·s-1,6P态猝灭速率系数为4.88×10-12cm3·s-1.     

新型FED荧光粉MSi2N2O2∶Eu2+(M=Sr,Ba)的发光性能

采用高温固相法合成了一系列新型绿色FED(Field Emission Display)荧光粉MSi2N2O2∶Eu2+(M=Sr,Ba),研究了该荧光粉在不同电压和电流密度下的发光特性.在电子束激发下,SrSi2N2O2:Eu2+的发射主峰位于541 nm,属于黄绿光发射;BaSi2N2O2∶Eu2+的发射主峰位于4...     

Mechanical anisotropy and electronic properties of X2N2 (XH2 ): first-principles calculations*

The mechanical anisotropy, structural properties, electronic band structures and thermal properties of C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are detailed and investigated in this work. The novel silicon nitride phase Si₂ N₂ (SiH₂ ) and germanium nitride phase Ge₂ N₂ (GeH₂ ) in the Cmc 2₁ structure are proposed in this work. The novel proposed Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are both mechanically and dynamically stable. The electronic band calculation of the HSE06 hybrid functional shows that C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are all wide band gap semiconductor materials, and C₂ N₂ (CH₂ ) and Si₂ N₂ (SiH₂ ) are direct band gap semiconductor materials, while Ge₂ N₂ (GeH₂ ) is a quasi-direct band gap semiconductor material, the band gap of C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are 5.634 eV, 3.013 eV, and 2.377 eV, respectively. The three-dimensional and plane distributions of Young’s modulus, shear modulus and Poisson’s ratio of C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) show that these materials have different degrees of mechanical anisotropy. The order of Young’s modulus of Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) in different directions is different from that of C₂ N₂ (CH₂ ). When the tensile axis is in a particular direction, the order of the Young’s modulus of Si₂ N₂ (SiH₂ ): E _[110] <E _[120] <E _[111] <E _[101] <E _[010] =E _[100] <E _[011] <E _[001], and the order of the Young’s modulus of Ge₂ N₂ (GeH₂ ): E _[110] <E _[111] <E _[101] <E _[120] <E _[100] <E _[010] <E _[011] <E _[001] .     

Modulation of Schottky barrier in XSi2N4/graphene (X=Mo and W) heterojunctions by biaxial strain

Reducing the Schottky barrier height (SBH) and even achieving the transition from Schottky contacts to Ohmic contacts are key challenges of achieving high energy efficiency and high-performance power devices. In this paper, the modulation effects of biaxial strain on the electronic properties and Schottky barrier of MoSi₂N₄ (MSN)/graphene and WSi₂N₄ (WSN)/graphene heterojunctions are examined by using first principles calculations. After the construction of heterojunctions, the electronic structures of MSN, WSN, and graphene are well preserved. Herein, we show that by applying suitable external strain to a heterojunction stacked by MSN or WSN — an emerging two-dimensional (2D) semiconductor family with excellent mechanical properties — and graphene, the heterojunction can be transformed from Schottky p-type contacts into n-type contacts, even highly efficient Ohmic contacts, making it of critical importance to unleash the tremendous potentials of graphene-based van der Waals (vdW) heterojunctions. Not only are these findings invaluable for designing high-performance graphene-based electronic devices, but also they provide an effective route to realizing dynamic switching either between n-type and p-type Schottky contacts, or between Schottky contacts and Ohmic contacts.     

Comparative study of electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes

In this paper, the electrical parameters of Au/n-Si (MS) and Au/Si₃N₄/n-Si (MIS) Schottky diodes are obtained from the forward bias current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Experimental results show that the rectifying ratios of MS and MIS diode at ± 5 V are found to be 1.25×10³ and 1.27×10⁴, respectively. The main electrical parameters of MS and MIS diode, such as the zero-bias barrier height (Φ _Bo) and ideality factor (n) are calculated to be 0.51 eV (I-V), 0.53 eV (C-V), and 4.43, and 0.65 eV (I-V), 0.70 eV (C-V), and 3.44, respectively. Also, the energy density distribution profile of the interface states (N_ss) is obtained from the forward bias I-V. In addition, the values of series resistance (R_s) for the two diodes are calculated from Cheung's method and Ohm's law.     

Renormalization and resummation in the O(N) model

In the O(N) model for the large N expansion one needs resummation which makes the renormalization of the model difficult. In the paper it is discussed, how can one perform a consistent perturbation theory at zero as well as at finite temperature with the help of momentum dependent renormalization schemes.     

N+2离子在氮直流辉光放电中碰撞离解的作用

采用氮辉光放电等离子体快电子和各种重粒子（N＋２，N＋，Nf）的混合Monte Carlo模型，从不同放电条件的离解碰撞率，快原子态粒子（N+，Nf）在阴极鞘层区的输运过程及轰击阴极的能量及角分布三个方面研究了 N＋２+N２→N+＋N+N2f反应在氮气直流辉光放电中的作用.该过程在电压较高时为阴极鞘层区的重要离解过程， 且主要发生在阴极附近，其碰撞率随电压和气压增加而增加；阴极表面附近的活性粒子（N＋，Nf）主要由该离解过程产生（而不是e--N2离解电离过程），而且这些粒子具有中等的平均能量且小角入射，是 关键词： 氮直流辉光放电 Monte Carlo模拟 N＋２-N２碰撞离解