de Haas–van Alphen Quantum Oscillations in BaSn_3 Superconductor with Multiple Dirac Fermions

Characterization of Fermi surface of the BaSn_3 superconductor(Т_c ～ 4.4 K) by de Haas–van Alphen(dHvA)effect measurement reveals its non-trivial topological properties. Analysis of non-zero Berry phase is supported by the ab initio calculations, which reveals a type-Ⅱ Dirac point setting and tilting along the high symmetric ■–■ line of the Brillouin zone, about 0.13 eV above the Fermi level, and other two type-Ⅰ Dirac points on the high symmetric ■–■ direction, but slightly far below the Fermi level. The results demonstrate BaSn_3 as an excellent example hosting multiple Dirac fermions and an outstanding platform for studying the interplay between nontrivial topological states and superconductivity.     

An Emphasis of Electron Energy Calculation in Quantum Wells

We investigate various methods for the calculation of the electron energy in semiconductor quantum wells and focus on a matrix algorithm method. The results show better fitness of the factor -h^2/2 э/эz 1/m*（z） э/эz than that of -h^2/2 1/m*（z） э^2/эz^2 in the first part of the Schro^edinger equation. The effect of nonparabolicity in the conduction band is also discussed.     

Four Electrons in a Coupled Three-Layer Quantum Dot

We investigate four electrons confined in a coupled three-layer quantum dot, by the exact diagonalization method. A vertical magnetic field to the confinement plane is considered. The ground-state electronic structures and angular momentum transitions are investigated. We find that for four-electron Q Ds, the Series of the magic numbers in three-layer QDs are different from those in one-, and two-layer Q Ds. These are connected to the exchange and rotational symmetries of the systems.     

Effect of Nonradiative Recombination on Carrier Dynamics in GaInNAs/GaAs Quantum Wells

The nonradiative recombination effect on carrier dynamics in GalnNAs/GaAs quantum wells is studied by timeresolved photoluminescence （TRPL） and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well simulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems.     

Strain Compensated AlInGaAs/InGaAs/InAs Triangular Quantum Wells for Lasing Wavelength beyond 2μm

The subband energy and lasing wavelength of compressively strained triangular Ino.53Ga0.47As/InAs quantum well are calculated and compared with the conventional rectangular ones with the same strain contents. The strain compensation using Al0.33In0.36Ga0.31As barrier is introduced. The results show that lasing wavelength can be extended dramatically to beyond 2.8μm by changing the energy band from the conventional rectangular shape to a triangular one, the realization of such a structure using molecular beam epitaxy technology is also discussed.     

Resonant Optical Absorption in Semiconductor Quantum Wells

We have calculated the intraband photon absorption coefficients of hot two-dimensional electrons interacting with polar-optical phonon modes in quantum wells. The dependence of the photon absorption coefficients on the photon wavelength λ is obtained both by using the quantum mechanical theory and by the balance-equation theory. It is found that the photon absorption spectrum displays a local resonant maximum, corresponding to LO energy, and the absorption peak vanishes with increasing the electronic temperature.     

Multicomponent Electron–Hole Liquid in Si/SiGe Quantum Wells

The density functional theory is used to calculate the energy of an electron–hole liquid in Si/Si_1–xGe_x/Si quantum wells. Three one-dimensional nonlinear Schrödinger equations for electrons and light and heavy holes are solved numerically. It is shown that, in shallow quantum wells (small x), both light and heavy holes exist in the electron–hole liquid. Upon an increase in the Ge content, a transition to a state with one type of holes occurs, with the equilibrium density of electron–hole pairs decreasing by more than a factor of 2.     

InAs和InAs/GaSb异质结的MOCVD生长和表征

以三甲基铟(TMIn)、砷烷(AsH3)、三甲基镓(TMGa)和三甲基锑(TMSb)为源,用水平常压MOCVD技术,在较低的Ⅴ/Ⅲ比的条件下(1.5～4)于GaAs和GaSb衬底上成功地生长了InAs合金和InAs/GaSb异质结。实验表明,生长温度在500℃～620℃范围内,InAs外延生长是扩散控制的。在Ⅴ/Ⅲ比为2.5时,生长效率(相对Ⅲ族源)为3×103μm/mol.不掺杂InAs外延层为n型的,室温迁移率为2000cm2/V.s.InAs/GaSb异质结的12KPL谱为一个在375meV处较宽的与杂质相关的跃迁峰,和一个在417meV附近的几乎被杂质峰湮没的带边峰.     

Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-Ⅱ Superlattice

Type-Ⅱ InAs/GaSb superlattices made of 13 InAs monolayers(MLs) and 7 GaSb MLs are grown on GaSb substrates by solid source molecular beam epitaxy.To obtain lattice-matched structures,thin InSb layers are inserted between InAs and GaSb layers.We complete a series of experiments to investigate the influence of the InSb deposition time,Ⅴ/Ⅲ beam-equivalent pressure ratio and interruption time between each layer,and then characterize the superlattice(SL) structures with high-resolution x-ray diffraction and atomic force microscopy.The optimized growth parameters are applied to grow the 100-period SL structure,resulting in the full-width half-maximum of 29.55 arcsec for the first SL satellite peak and zero lattice-mismatch between the zero-order SL peak and the GaSb substrate peak.     

Anomalous Temperature Dependence of Photoluminescence in GaInNAs／GaAs Multiple Quantum Wells

Photoluminescence (PL) spectra of GaInNAs/GaAs multiple quantum wells grown on a GaAs substrate by molecular beam epitaxy are measured in a range of temperatures and excitation power densities.The energy position of the dominant PL peak shows an anomalous S-shape temperature dependence instead of the Varshni relation.By careful inspection,especially for the PL under lower excitation power density,two near bandedge peaks are well identified.These are assigned to carriers localized in nitrogen-induced bound states and interband excitonic recombinations,respectively.It is suggested that the temperature-induced switch of such two luminescence peaks in relative intensity causes a significant mechanism responsible for the S-shape shift observed in GaInNAs.A quantitative model based on the thermal depopulation of carriers is used to explain the temperature dependence of the PL peak related to N-induced bound states.     

Many-Body Effect in Spin Dephasing in n-Type GaAs Quantum Wells

By constructing and numerically solving the kinetic Bloch equations we perform a many-body study of the spin dephasing due to the D‘yakonov-Perel‘ effect in n-type GaAs (100) quantum wells for high temperatures. In our study, we include the spin-conserving scattering such as the electron-phonon, the electron-nonmagnetic impurity as well as the electron-electron Coulomb scattering into consideration. The dephasing obtained from our theory contains both the single-particle and the many-body contributions with the latter originating from the inhomogeneous broadening introduced by the DP term [J. Supercond.: Incorp. Novel Magn. 14 (2001) 245; Eur. Phys. J. B 18 (2000) 373]. Our result agrees very well with the experimental data [Phys. Rev. B 62 (2000) 13034] of Malinowski et al. We further show that in the case we study, the spin dephasing is dominated by the many-body effect.     

Anticrossing Gap between Pairs of the Subbands in AlxGa1-xN/GaN Double Quantum Wells

Dependences of anticrossing gaps between pairs of subbands in Alx Ga1-xN/GaN double quantum wells （DQWs） on the width and the Al composition of the central barrier of the DQWs and on the well width of the DQWs have been investigated by solving the Schroedinger and Poisson equations self-consistently. It is found that the anticrossing gaps are not influenced by the polarization-induced electric field in the DQWs. The anticrossing gaps decrease with increasing the width and the Al composition of the central barrier of the DQWs, as well as with the increasing well width of the DQWs. According to the results of the calculation, the anticrossing gaps can reach 150 meV in AlxGa1-xN/GaN DQWs. There is significant coupling between the two wells of the DQWs when the width of the central barrier of the DQWs is narrower than 2nm.     

Polaron Energy and Effective Mass in Parabolic Quantum Wells

The energy and effective mass of a polaron in a parabolic quantum well are studied theoretically by using LLP-like transformations and a variational approach. Numerical results are presented for the polaron energy and effective mass in the GaAs/Al0.3Ga0.7As parabolic quantum well. The results show that the energy and the effective mass of the polaron both have their maxima in the finite parabolic quantum well but decrease monotonously in the infinite parabolic quantum well with the increasing well width. It is verified that the bulk longitudinal optical phonon mode approximation is an adequate formulation for the electron-phonon coupling in parabolic quantum well structures.     

InAs/AlSb/GaSb量子阱中的双色光吸收

为了降低噪声对InAs/GaSb量子阱作为双色电探测器性能的影响,设计性能优良的光电探测器,在InAs/GaSb量子阱中加入AlSb夹层,以减少电子和空穴在界面处的复合,从而抑制由于电子和空穴复合引起的噪声。首先应用转移矩阵方法求解薛定谔方程得到量子阱中电子和空穴的能级和波函数,研究AlSb夹层对电子和空穴波函数的影响。应用平衡方程方法求解外加光场条件下的玻尔兹曼方程,研究所有电子和空穴跃迁通道对光吸收系数的贡献,重点研究了AlSb夹层厚度对光吸收系数的影响。结果表明:基于In As/GaSb的量子阱体系可以实现双色光吸收,加入AlSb夹层可以有效抑制电子和空穴在界面处的隧穿,从而降低复合噪声,同时AlSb夹层的加入也对吸收峰有影响。AlSb夹层的厚度达到2 nm即可有效降低电子和空穴复合噪声,双色光吸收峰在中远红外波段,为该量子阱作为性能良好的中远红外光电探测器提供理论支撑。     

Ultrafast Relaxation of Coherent Control Photocurrent in AlGaAs／GaAs Multi Quantum Wells

We theoretically and experimentally study the ultrafast dynamics of coherent control photocurrent in AsGaAs/GaAs multi quantum wells at room temperature. A ballistic photocurrent relaxation time of～200fs is deduced based on the theory of density matrix and is evidenced with the three-colour femtosecond pump-probe measurements.     

InAs/GaSb量子阱的能带结构及光吸收

采用八能带K-P理论以及有限差分方法,研究了沿[001]方向生长的InAs/GaSb二类断带量子阱体系的能带结构、波函数分布和对[110]方向线性偏振光的吸收特性.研究发现,通过改变InAs或GaSb层的厚度,可有效调节该量子阱体系的能带结构及波函数分布.计算结果表明,当InAs/GaSb量子阱的导带底与价带顶处于共振状态时,导带基态与轻空穴基态杂化效应很小,且导带基态与第一激发态的波函数存在较大的重叠,导带基态与第一激发态之间在布里渊区中心处的跃迁概率明显大于导带底与价带顶处于非共振状态时的跃迁概率.研究结果对基于InAs/GaSb二类断带量子阱体系的中远红外波段的新型级联激光器、探测器等光电器件的设计具有重要意义.     

Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing

We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. To identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. Our experiment reveals that some composition redistribution or other related ordering processes may occur in the quantum-well layer during annealing. Annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells.