First-principles investigation on the interlayer doping of SnSe<Subscript>2</Subscript> bilayer

Using density functional theory calculations, we systematically investigated the effects of numbers and types of transition metals (TM) on the magnetic property of SnSe₂ bilayer nanosheet. Our results revealed that, when one TM is introduced into the interlayer, the magnetic moment induced by the Co and Ni is tiny while it is largely strengthened with the doping of V, Cr, Mn, and Fe. When two TMs are inserted into the interlayer, V and Cr make the system change into a weak antiferromagnetism (AFM) state while Mn-, Fe-, Co-doped systems display a weak ferromagnetism (FM) ground state. These FM states have the magnetic moments which double those of the one TM–doping systems. With the TM numbers further increasing to four, the robust AFM and FM features appear with the doping of Fe and Mn, respectively. Ni cannot induce any magnetism whatever the numbers of Ni are filling in. Interestingly, with the increase of the numbers of dopants, transitions from FM to AFM and AFM to FM are predicted to be realized on Fe-SnSe₂ and Cr-SnSe₂ systems, respectively. This kind of transition may be important for the applications in spintronic devices.

Open image in new window

Graphical Abstract ?

     

Structural and magnetic properties of MoS2 monolayer zigzag nanoribbon doped by Ti,V, Cr,and Mn

In order to find new functions of monolayer MoS₂ in nanoelectronics or spin electronic devices, using spin-polarized density functional theory (DFT) calculations with on-site coulomb interaction (U), we investigated substitutional doping of Mo atoms of monolayer zigzag MoS₂ nanoribbon (ZZ-MoS₂ NR) by transition metals (TM) (where TM = Ti, V, Cr, Mn) at the Mo-edge, S-edge, and the middle of the NRs. The results of this study indicate the NR widened irrespective of the doped TM position and type, and the Mo-edge was found as the easiest substitutional position. For ZZ-MoS₂ NR doped by Mn, Cr or V atoms, the preferred magnetic coupling state is the edge atoms of S at the S-edge, exhibiting the same spin polarization with TM (named the FM1 state), attributing the NR with metallic magnetism. For Ti-doped monolayer ZZ-MoS₂ NR, in addition to the FM1 state, other preferred magnetic coupling state was observed in which the edge atoms of S at the S-edge exhibit the opposite spin polarization with that of Ti (named the FM2 state). Thus, the NR doped by Ti atom possesses metallic (FM1 state) or half-metallic (FM2 state) magnetism. The total magnetic moments of the ZZ-MoS₂ NR doped by TM follows a linear relationship as a function of the TM dopants (Mn, Cr, V, and Ti). Under $>4\text{\%}$ applied strain, the NR doped by Ti atom only presents the characteristics of half-metallic magnetism as the initial one in the FM2 state, and its total magnetic moment always remained 0 μB, i.e., it was not affected by the width of the NR. This study provides a rational route of tuning the magnetic properties of ZZ-MoS₂ NRs for their promising applications in nanoelectronics and spin electronic devices.     

Spin-polarized calculations of electronic structures in ferromagnetic and antiferromagnetic Zn0.75TM0.25Se (TM=Cr,Fe, Co and Ni)

In this work, we aim to examine the spin-polarized electronic band structures, the local densities of states as well as the magnetism of Zn_1−xTM_xSe (TM=Cr, Fe, Co and Ni) diluted magnetic semiconductors in the ferromagnetic (FM) and antiferromagnetic (AFM) phases, and with 25% of TM. The calculations are performed by the developed full-potential augmented plane wave plus local orbitals method within the spin density functional theory. As exchange-correlation potential we used the generalized gradient approximation (GGA) form. We treated the ferromagnetic and antiferromagnetic phases and we found that all compounds are stable in the ferromagnetic structure. Structural properties are computed after total energy minimization. Our results show that the cohesive energies of Zn_0.75TM_0.25Se are greater than that of zinc blende ZnSe. We discuss the electronic structures, total and partial densities of states, local moments and the p–d exchange splitting. Furthermore, we found that p–d hybridization reduces the local magnetic moment of TM and produces small local magnetic moments on the nonmagnetic Zn and Se sites. We found also that in the AFM phase the TM local magnetic moments are smaller than in the FM phase; this is due to the greater interaction of the TM d-up and d-down orbitals.     

铬和镍的添加对Fe3Al合金力学性能影响的DFT研究

利用第一原理研究了过渡金属元素 Cr 或 Ni 在 Fe₃Al合金中的优先占位行为及其合金化效应. 计算结果表明: Cr 或 Ni 的取代有助于Fe₃Al 合金体系更稳定, Cr 优先占据 Fe_I 位, Ni 优先占据 Fe_II位. Fe₂NiAl-II 具有最小的剪切模量G, 杨氏模量E和G/B值, 因此Fe₂NiAl-II合金的韧性、延展性最佳. 态密度和电荷密度图表明, 过渡金属元素的取代提高了它们与近邻基体原子之间的相互作用, 削弱了Al和Fe的相互作用.     

Ab initio study of magnetic properties in the adsorption of transition-metal atoms on arsenene

The magnetic properties of adsorption of different transition-metal (TM) atoms (Co, Cu, Mn, Fe, and Ni) on arsenene are investigated using density functional theory (DFT). Magnetism appears in the cases of Co, Mn, and Fe. Among all the magnetic cases, the TM atom prefers the same adsorption site. Then, we further study the interaction in two-TM-adsorbed system and different magnetic states are observed. Our results show that both nonmagnetic and ferromagnetic states exist in two-Co-adsorbed system and the p-d hybridization mechanism results in its ferromagnetic state. However, for two Mn and two Fe adsorbed systems, an AFM interaction is found, which could be reasonably explained by the superexchange mechanism. Such multiple magnetic properties may suggest promising applications of TM-adsorbed arsenene in the future.     

The evolution of electronic configuration and magnetic characterization of Fe<Subscript>9</Subscript>Ni<Subscript>1</Subscript>, Fe<Subscript>8</Subscript>Ni<Subscript>2</Subscript> alloy in theoretical calculation

To analyze the origin of the magnetic enhancement of Fe-Ni alloy, the electronicconfigurations and magnetic properties were investigated using density functional theorybased on the first-principle. The supercell (5 × 1 × 1) of Fe,Fe₉Ni₁ and Fe₈Ni₂ were constructed. Thedefect formation energy, band structure, density of states and electron density differencewere calculated. The results showed that Ni doping changed the electronic configuration ofFe atoms, resulting in the enhancement of spin polarization of Fe and the larger Bohrmagnetic moment in Fe-Ni alloys (Fe₉Ni₁). The results showed thatthe charge transfer and the atomic spacing between Fe atoms and the dopant Ni atoms playedan important role in determination of magnetic moment. The value of Fe supercell(5 × 1 × 1), Fe₉Ni₁ and Fe₈Ni₂ were 23.14,23.34 and 22.61μ _B, respectively.     

Geometric symmetry modulated spin polarization of electron transport in graphene-like zigzag FeB<Subscript>2</Subscript> nanoribbons

Due to electron deficiency, the graphene-like honeycomb structure of boron is unstable. By introducing Fe atoms, it is reported that FeB₂ monolayer has excellent dynamic and thermal stabilities at room temperature. Based on first-principles calculations, the spin-dependent transport of zigzag FeB₂ nanoribbons (ZFeB₂NRs) under ferromagnetic state (FM) is investigated. It is found that, around the Fermi level, FeB-terminated (or FeFe-terminated) ZFeB₂NRs exhibit completely spin-polarized (or spin-unpolarized) transmission, and BB-terminated configurations exhibit completely unpolarized or partially polarized transmission. Further analysis shows that, the hinge dihedral angle has a switching effect on the transport channels, and the spin polarization of the transmission is determined by the symmetry of the distribution of hinge dihedral angles along the transverse direction of the ribbon, where symmetric/asymmetric distribution induces spin-unpolarized/polarized transmission. Moreover, such a symmetry effect is found to be robust to the width of the ribbon, showing great application potential. Our findings may throw light on the development of B-based spintronic devices.     

First principles study on the electronic structure of the two chain compounds of [ M(N3)2(HCOO)][(CH3)2NH2] (M=Fe and Co)

First principles calculations have been performed to study the electronic structure and the ferromagnetic properties on the two chain compounds of [M(N₃)₂(HCOO)][(CH₃)₂NH₂] (M=Fe and Co). The relative stability of the ground state, the density of states and the electronic band structure are examined. The results reveal that antiferromagnetism (AFM) state is the ground state and ferromagnetism (FM) state is the metastable one for both of them. The two compounds exhibit semiconductor character with small gap in the FM state, while metallic in the AFM state. In the FM state, the magnetic moments mainly arise from the Fe and Co ions with little contribution from the nearest-neighboring N and O atoms due to the hybridization between the Fe or Co 3d states and the nearest-neighboring N and O 2p states.     

Tunable electronic structure and magnetic coupling in strained two-dimensional semiconductor MnPSe<Subscript>3</Subscript>

The electronic structures and magnetic properties of strained monolayer MnPSe₃ are investigated systematically via first-principles calculations. It is found that the magnetic ground state of monolayer MnPSe₃ can be significantly affected by biaxial strain engineering, while the semiconducting characteristics are well-preserved. Owing to the sensitivity of the magnetic coupling towards structural deformation, a biaxial tensile strain of approximately 13% can lead to an antiferromagnetic (AFM)- ferromagnetic (FM) transition. The strain-dependent magnetic stability is mainly attributed to the competition of the direct AFM interaction and indirect FM superexchange interaction between the two nearest-neighbor Mn atoms. In addition, we find that FM MnPSe₃ is an intrinsic half semiconductor with large spin exchange splitting in the conduction bands, which is crucial for the spin-polarized carrier injection and detection. The sensitive interdependence among the external stimuli, electronic structure, and magnetic coupling makes monolayer MnPSe₃ a promising candidate for spintronics.     

Passive Q-switching based on ReS<Subscript>2</Subscript> saturable absorber in Er-doped fiber laser at 1532 nm

A passively Q-switched microsecond Er-doped fiber laser at 1532 nm wavelength was demonstrated by using a ReS₂-based saturable absorber. The absorber was fabricated with ReS₂ by exfoliating mechanically and transferred onto a fiber end. Stable Q-switched laser pulses were observed with the shortest pulse duration of 2.1 μs, the maximum average output power of 2.48 mW, and the pulse with energy up to 38 nJ. Our experimental results suggest that ReS₂ is potential for a Q-switcher near 1.55 μm wavelength.     

First-principles study on the magnetic properties of transition-metal atoms doped (ZnS)12 cluster

A first-principles density functional investigation has been performed to evaluate the structural, electronic, and magnetic properties of (ZnS)₁₂ doped with one or two transition-metal (TM) atoms (Fe, Co, and Ni). Substitutional- and interstitial-doping are considered. The substitutional isomers are found to be most favorable for Fe-doped clusters, while the interstitial isomers are found to be most favorable for Co- and Ni-doped clusters. Magnetic coupling between the TM atoms at the nearest neighbor position is mainly governed by the competition between direct ferromagnetic and antiferromagnetic interactions between two TM atoms via the S atom due to strong p-d hybridization. The coupling is short-ranged. Most importantly, we demonstrate that the Fe and Ni endohedral bi-doped (ZnS)₁₂ clusters favor the ferromagnetic state, which has potential applications in nanoscale quantum devices.     

Induction of an atomically thin ferromagnetic semiconductor in 1T′ phase ReS2 by doping with transition metals

Two-dimensional 1T′ phase ReS₂, a transition metal dichalcogenide, has a unique structure and electronic properties that are independent of thickness. The pure phase is a nonmagnetic semiconductor. Using density functional theory calculations, we show that ReS₂ can be tuned to a magnetic semiconductor by doping with transition metal atoms. The magnetism mainly comes from the dopant transition metal and neighboring Re and S atoms as a result of competition between exchange splitting and crystal field splitting. ReS₂ doped with Co can be considered as a promising diluted magnetic semiconductor owing to its strong ferromagnetism with long-range ferromagnetic interaction, high Curie temperature (above room temperature) and good stability. These findings may stimulate experimental validation and facilitate the development of new atomically thin diluted magnetic semiconductors based on transition metal dichalcogenides.     

The influence of the transition metal substitution on chemically prepared ferrite nanoparticles - Mössbauer studies

Mössbauer measurements were carried out in order to study the influence of the transition metal substitution TM/Fe (where TM = Co, Ni, Mn, and (TM)_xFe_3−xO₄) ranging from 0.1 to 0.9 on the morphology and magnetic properties of ferrite nanoparticles. Chemically prepared magnetite nanoparticles with 13 nm were used as a reference material. The Mössbauer spectrum of the initial magnetite sample show a well-resolved magnetically split patterns connected with tetrahedral (A) positions and octahedral (B) positions. For low concentrations of TM, the relative intensities of the sextet that comes from the iron B position decrease. This means that the Co, Ni, Mn atoms are located preferentially in the B-site of the magnetite. However, the qualitative analysis of the spectra also suggests that Mn and Ni partially occupy the A-site. The increase of the concentration of the substitution transition metal causes broadening of the magnetic part of the spectra and appearance of a doublet in the central part of spectra for all samples. TEM studies show that the incorporation of the Me atoms into the structure causes a decrease of the average particle size. This is also confirmed by XRD. This also means that the blocking temperature decreases and for about Ni/Fe = 0.8 and TM/Fe = 0.9 (for Mn and Co) reaches room temperature. In the case of the nominal 0.9 substitution by Ni, a pure superparamagnetic state is observed, while for Co and Mn some of the particles are still below the blocking temperature, in agreement with the TEM studies.     

Synthesis and characterization of mesoporous and hollow-mesoporous M<Subscript>x</Subscript>Fe<Subscript>3-x</Subscript>O<Subscript>4</Subscript> (M=Mg,Mn, Fe,Co, Ni,Cu, Zn) microspheres for microwave-triggered controllable drug delivery

Spinel ferrites can be used in magnetic targeting and microwave heating and can therefore be used for targeted and controllable drug delivery. We used the cetyltrimethylammonium bromide-assisted solvothermal method to synthesize a series of spinel ferrites (M_xFe_3-xO₄, M=Mg, Mn, Fe, Co, Ni, Cu, Zn) with a mesoporous or hollow-mesoporous structure suitable for direct drug loading and the particle diameters ranging from 200 to 350 nm. We investigated the effects of M²⁺ cation on the morphology and properties of these products by analyzing their transmission electron microscopy images, mesoporous properties, magnetic properties, and microwave responses. We chose hollow-mesoporous M_xFe_3-xO₄ (M=Fe, Co, Zn) nanoparticles, which had better overall properties, for the drug VP16 (etoposide) loading and microwave-controlled release. The Co_xFe_3-xO₄ and Fe₃O₄ particles trapped 61.5 and 64.8%, respectively, of the VP16, which were higher than that (60.4%) of Zn_xFe_3-xO₄. Controllable drug release by these simple magnetic nanocarriers can be achieved by microwave irradiation, and VP16-loaded Co_xFe_3-xO₄ released the most VP16 molecules (more than 50% after 1 h and 69.1% after 6 h) under microwave irradiation. Our results confirm the favorable drug loading and microwave-controlled delivery by these ferrites, and lay a theoretical foundation to promote clinical application of the targeted controllable drug delivery system.

Open image in new window

Graphical abstract In the present study, we prepared mesoporous or hollow-mesoporous spinel ferrites (M_xFe_3-xO₄, M=Mg, Mn, Fe, Co, Ni, Cu, Zn) by CTAB-assisted solvothermal method and solved the problem of Cu and Ni impurities in Cu_xFe_3-xO₄ and Ni_xFe_3-xO₄ products by means of magnetic separation and additional redox reactions, respectively. We investigated the effects of the M²⁺ cation on the morphology, mesoporous properties, magnetic properties, and microwave responses of these ferrites. Then, the drug loading and microwave-controlled drug release of hollow-mesoporous M_xFe_3-xO₄ (M?=?Fe, Co, Zn) nanoparticles with better overall properties were also studied. Co_xFe_3-xO₄ has the best overall performances for microwave-controlled drug release.

     

Structural,electronic,and magnetic properties of transition-metal atom adsorbed two-dimensional GaAs nanosheet

By using first-principles calculations within the framework of density functional theory,the electronic and magnetic properties of 3d transitional metal(TM) atoms(from Sc to Zn) adsorbed monolayer Ga As nanosheets(Ga As NSs) are systematically investigated.Upon TM atom adsorption,Ga As NS,which is a nonmagnetic semiconductor,can be tuned into a magnetic semiconductor(Sc,V,and Fe adsorption),a half-metal(Mn adsorption),or a metal(Co and Cu adsorption).Our calculations show that the strong p–d hybridization between the 3d orbit of TM atoms and the 4p orbit of neighboring As atoms is responsible for the formation of chemical bonds and the origin of magnetism in the Ga As NSs with Sc,V,and Fe adsorption.However,the Mn 3d orbit with more unpaired electrons hybridizes not only with the As 4p orbit but also with the Ga 4p orbit,resulting in a stronger exchange interaction.Our results may be useful for electronic and magnetic applications of Ga As NS-based materials.     

Geometric frustrations in magnetically diluted complex oxides Li<Emphasis Type="Italic">M</Emphasis>O<Subscript>2</Subscript> (<Emphasis Type="Italic">M</Emphasis> = Sc,Ga, 3<Emphasis Type="Italic">d</Emphasis> elements)

The effect of local environment of a transition-element atom on the properties of bulk ceramics has been investigated by the example of complex oxides LiMO₂ (M = Sc, Ga, Fe, Co, Ni). It is found that the anomalies in the magnetic properties of all systems studied are due to the presence of nanoclusters of transition-element atoms and the magnetic and geometric frustrations related to the nanocluster formation.     

TM掺杂的Ⅲ-Ⅴ族稀磁半导体电磁性质的第一原理计算

使用基于自旋局域密度泛函理论的第一性原理方法对3d过渡金属(TM=V，Cr，Mn，Fe，Co和Ni)掺杂的Ⅲ-Ⅴ族半导体(GaAs和GaP)的电磁性质进行了计算.结果发现：用V，Cr和Mn掺杂时体系将出现铁磁状态，而Fe掺杂时将出现反铁磁状态，Co和Ni掺杂时，其磁性则不稳定.其中，Cr掺杂的GaAs和GaP将可能是具有较高居里温度的稀磁半导体(DMS).在这些DMS系统中，V离子的磁矩大于理论期待值，Fe，Co和Ni离子的磁矩小于理论期待值，Cr和Mn离子的磁矩与期待值的差距取决于晶体的对称性以及磁性离子的能带分布.此外，使用Si和Mn共同对Ⅲ-Ⅴ族半导体进行掺杂，将有利于DMS表现为铁磁状态，并可以使体系的T_C进一步提高. 关键词： 稀磁半导体 过渡金属 掺杂 共掺杂     

All-electron relativistic calculation on Au5X (X = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn) clusters

All-electron scalar relativistic calculations on Au₅X (X = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn) clusters have been performed by using density functional theory with the generalized gradient approximation. Our calculation results indicate that all the lowest energy geometries of Au₅X clusters have planar structures; the doped X atoms prefer to occupy the fourfold coordination site. Except Au₅Fe, Au₅Co and Au₅Zn, for other clusters including pure Au₆ cluster, the HOMO are delocalized obviously with a contribution from all atoms in the cluster. On the contrary, the electron localization in Au₅Zn is very strong resulting in the least stability of this cluster. Au₅Cu cluster with six delocalized electrons being defined as magic number for two-dimensional system has the largest VIP and deepest HOMO energy level. With the substitution Au for X atoms, the metallicity of all Au₅X clusters is reinforced.     

双轴应变调控二维单层C2X2TM（X = O, H; TM=Fe, Cr） 的多铁性研究

基于密度泛函理论的第一性原理计算,系统地研究了过渡金属原子插层的单层氧化/氢化石墨烯的磁学性质和铁电性质.在考虑了电子在位库仑作用和自旋轨道耦合作用下,得到了过渡金属Fe、Cr插层形成的C₂X₂TM二维单层膜的稳定结构以及基态磁性结构,研究了不同应变作用下C₂X₂TM的磁性、能带、铁电极化以及电子结构的变化.结果发现,对于任何应变下的C₂X₂TM其基态磁性都为手性逆时针反铁磁结构.在无应变时体系存在一个较大的离子翻转势垒,通过外加双轴应变,可有效调控体系的势垒高度和能隙,发现25%应变下C₂O₂Cr和30%应变时C₂O₂Fe单层薄膜具有与GeS等二维铁电材料相近的铁电极化和翻转势垒,这些研究结果表明C₂O₂Fe(Cr)单层薄膜是一种新型二维多铁性材料.     

Electronic structures,magnetic properties and band alignments of 3d transition metal atoms doped monolayer MoS2

Utilizing first-principles calculations, the electronic structures, magnetic properties and band alignments of monolayer MoS₂ doped by 3d transition metal atoms have been investigated. It is found that in V, Cr, Mn, Fe-doped monolayers, the nearest neighboring S atoms (S_NN) are antiferromagnetically polarized with the doped atoms. While in Co, Ni, Cu, Zn-doped systems, the S_NN are ferromagnetically coupled with the doped atoms. Moreover, the nearest neighboring Mo atoms also demonstrate spin polarization. Compared with pristine monolayer MoS₂, little change is found for the band edges' positions in the doped systems. The Fermi level is located in the spin-polarized impurity bands, implying a half-metallic state. These results provide fundamental insights for doped monolayer MoS₂ applying in spintronic, optoelectronic and electronic devices.