Specific features of electrical conductivity of V<Subscript>3</Subscript>O<Subscript>5</Subscript> single crystals

The electrical conductivity of V₃O₅ single crystals has been investigated over a wide temperature range, including the region of existence of the metallic phase and the region of the transition from the metallic phase to the insulating phase. It has been shown that the low electrical conductivity of metallic V₃O₅ is caused, on the one hand, by a lower concentration of electrons and, on the other hand, by a strong electronelectron correlation whose role with decreasing temperature increases as the phase transition temperature is approached. The temperature dependence of the electrical conductivity of the insulating phase of V₃O₅ has been explained in the framework of the theory of hopping conduction, which takes into account the effect of thermal vibrations of atoms on the resonance integral.     

Effects of BaTiO<Subscript>3</Subscript> and SrTiO<Subscript>3</Subscript> as the buffer layers of epitaxial BiFeO<Subscript>3</Subscript> thin films

BiFeO₃ (BFO) thin films with BaTiO₃ (BTO) or SrTiO₃ (STO) as buffer layer were epitaxially grown on SrRuO₃-covered SrTiO₃ substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain in the BFO films, whereas the STO buffer causes compressive strain. Different ferroelectric domain structures caused by these two strain statuses are revealed by piezoelectric force microscopy. Electrical and magnetical measurements show that the tensile-strained BFO/BTO samples have reduced leakage current and large ferroelectric polarization and magnetization, compared with compressively strained BFO/STO. These results demonstrate that the electrical and magnetical properties of BFO thin films can be artificially modified by using a buffer layer.     

Magnetotransport characteristics of strained La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> epitaxial manganite films

The electrical and magnetic characteristics of La_0.7Sr_0.3MnO₃ (LSMO) epitaxial manganite films are investigated by different methods under conditions when the crystal structure is strongly strained as a result of mismatch between the lattice parameters of the LSMO crystal and the substrate. Substrates with lattice parameters larger and smaller than the nominal lattice parameter of the LSMO crystal are used in experiments. It is shown that the behavior of the temperature dependence of the electrical resistance for the films in the low-temperature range does not depend on the strain of the film and agrees well with the results obtained from the calculations with allowance made for the interaction of electrons with magnetic excitations in the framework of the double-exchange model for systems with strongly correlated electronic states. Investigations of the magneto- optical Kerr effect have revealed that an insignificant (0.3%) orthorhombic distortion of the cubic lattice in the plane of the NdGaO₃(110) substrate leads to uniaxial anisotropy of the magnetization of the film, with the easy-magnetization axis lying in the substrate plane. However, LSMO films on substrates (((LaAlO₃)_0.3+(Sr₂AlTaO₆)_0.7)(001)) ensuring minimum strain of the films exhibit a biaxial anisotropy typical of cubic crystals. The study of the ferromagnetic resonance lines at a frequency of 9.76 GHz confirms the results of magnetooptical investigations and indicates that the ferromagnetic phase in the LSMO films is weakly inhomogeneous.     

A study of magnetic ordering in LaMnO<Subscript>3+δ</Subscript> single crystals

The magnetic state of LaMnO_3+δ single crystals with different contents of nonstoichiometric oxygen grown by electric deposition is studied by measuring the temperature and field dependences of magnetization for different orientations of a magnetic field. The results obtained are analyzed in terms of a two-phase magnetic-state model.     

Microstructures and impedance studies of Bi<Subscript>3.15</Subscript>Nd<Subscript>0.85</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films

Microstructures and impedance characteristics of chemical-solution-derived Bi_3.15Nd_0.85Ti₃O₁₂ thin films were studied as functions of temperature. A dielectric anomaly was found at around 450°C, corresponding to the paraelectric to ferroelectric transition. Via complex impedance studies, grain and grain boundary contributions to the impedance were separated. The resistance of grain and grain boundaries is found governed by the same kind of space charge with an activation energy around 1.1 eV, close to that of oxygen vacancies in perovskite ferroelectrics. The low temperature ac conductance of BNdT thin films shows a frequency dispersion, which can also be ascribed to space charges mainly due to oxygen vacancies. The results were compared with SrBi₂Ta₂O₉ in terms of oxygen vacancy conductivity.     

Dielectric and optical properties of Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)<Subscript>0.8</Subscript>Ti<Subscript>0.2</Subscript>O<Subscript>3</Subscript> (PMNT-0.2) ferroelectric relaxor single crystals

The dielectric and optical (optical transmission, small-angle light scattering, birefringence) properties of PMNT-0.2 single crystals and their variation induced by a dc electric field have been studied. The birefringence was found to increase anomalously at the transition from the rhombohedral ferroelectric to the inhomogeneous relaxor phase (the spontaneous ferroelectric transition temperature T_sp). Below T_sp, the dielectric and optical properties were observed to exhibit anomalies originating from reorientation and growth of domains in size. Unlike ferroelectric relaxors of the type of PbB′_1/3B′_2/3O₃ and PbB′_1/2B′_1/2O₃, in PMNT-0.2 neither induction of the ferroelectric phase by an electric field nor thermally stimulated destruction of the ferroelectric state occurs through the percolation mechanism (i.e., they are not accompanied by anomalously narrow maxima in small-angle light scattering). This is attributed to the inhomogeneous structure of the relaxor phase, as a result of which the phase transition does not take place simultaneously in various regions of the crystal.     

Magnetorefractive effect in La<Subscript>0.7</Subscript>Ca<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> in the infrared spectral range

The reflection and magnetic reflection spectra, magnetic resistance, electrical properties, and equatorial Kerr effect in La_0.7Ca_0.3MnO₃ crystals have been complexly investigated. The measurements have been performed in wide temperature and spectral ranges in magnetic fields up to 3.5 kOe. It has been found that magnetic reflection is a high-frequency response in the infrared spectral range to the colossal magnetore-sistance near the Curie temperature. Correlation between the field and temperature dependences of the magnetic reflection and colossal magnetoresistance has been revealed. The previously developed theory of the magnetorefractive effect for metallic systems makes it possible to explain the experimental data at the qualitative level. Both demerits of the theory of the magnetorefractive effect in application to the magnets and possible additional mechanisms responsible for the magnetic reflection are discussed.     

Phase transition in nanostructured LaMnO<Subscript>3</Subscript>

Nanocrystalline LaMnO₃ samples have been synthesized by the coprecipitation of lanthanum and manganese salt solutions followed by annealing at 800°C in air and then in an argon flow. With the use of X-ray and neutron diffraction analysis, it has been found that the resulting samples had an orthorhombic crystal structure (space group Pbnm). In the nanocrystalline LaMnO₃ samples, an order-disorder phase transition from the low-temperature phase to the high-temperature phase occurs at (220 ± 10)°C, which is much lower than the value of 477°C for bulk LaMnO₃. The phase transition is due to the removal of the Jahn-Teller distortion of the Mn³⁺O₆ oxygen octahedrons and is accompanied by a decrease in the unit cell volume of lanthanum manganite over a narrow temperature range.     

Luminescence and scintillation properties of Y<Subscript>3</Subscript>A<Subscript>l5</Subscript>O<Subscript>12</Subscript>:Ce single crystals and single-crystal films

Luminescence and scintillation properties of Y₃A_l5O₁₂:Ce single crystals grown from the melt by the Czochralski and horizontal directed crystallization methods in various gas media and Y₃A_l5O₁₂:Ce single-crystal films grown by liquid-phase epitaxy from a melt solution based on a PbO-B₂O₃ flux have been comparatively analyzed. The strong dependence of scintillation properties of Y₃A_l5O₁₂:Ce single crystals on their growth conditions and concentrations of Y_Al antisite defects and vacancy defects has been established. Vacancy defects are involved in Ce³⁺ ion emission excitation as the centers of intrinsic UV luminescence and trapping centers. It has been shown that Y₃A_l5O₁₂:Ce single-crystal films are characterized by faster scintillation decay kinetics than single crystals and a lower content of slow components in Ce³⁺ ion luminescence decay during high-energy excitation due to the absence of Y_Al antisite defects in them and low concentration of vacancy defects. At the same time, the light yield of Y₃A_l5O₁₂:Ce single-crystal films is comparable to that of single crystals grown by directed crystallization due to the quenching effect of the Pb²⁺ ion impurity as a flux component and is slightly lower (∼25%) than the light yield of single crystals grown by the Czochralski method.     

Lattice dynamics and ferroelectric instability in ordered and disordered PbSc<Subscript>1/2</Subscript>Ta<Subscript>1/2</Subscript>O<Subscript>3</Subscript> and PbSc<Subscript>1/2</Subscript>Nb<Subscript>1/2</Subscript>O<Subscript>3</Subscript> solid solutions

The dynamic Born charges and the frequency spectra of lattice oscillations in the crystals of ordered and disordered PbSc_1/2Ta_1/2O₃ (PST) and PbSc_1/2Nb_1/2O₃ (PSN) solid solutions have been calculated within the framework of the generalized Gordon-Kim model with allowance for the dipole and quadrupole polarizabilities. The phonon spectra of both compounds contain ferroelectric soft modes. The influence of various interactions on the magnitude of dynamic charges and ferroelectric instability in PSN and PST solid solutions has been studied and it is shown that both these charges and the ferroelectric instability are determined by the competition between long-range dipole-dipole interactions and short-range dipole-charge interactions, the determining role played by the interaction of Nb (Ta) cations and oxygen anions in the Nb-O (Ta-O) bond direction.     

Response of the electrical resistivity of La<Subscript>0.67</Subscript>Ba<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript>(20 nm)/LaAlO<Subscript>3</Subscript>(001) films to magnetic field and variation in temperature

The structure, electrical resistivity, and magnetotransport parameters of 20-nm-thick epitaxial La_0.67Ba_0.33MnO₃ films grown by laser ablation on LaAlO₃(001) substrates are studied. The unit cell volume V _eff = 58.80 ų of the as-grown manganite films is found to be less than that for bulk La_0.67Ba_0.33MnO₃ crystals. Maximum values of the negative magnetoresistance MR(μ₀ H = 1 T) = ?0.27 for La_0.67Ba_0.33MnO₃ films are observed at a temperature of about 225 K. For 5 < T < 100 K, the film magnetoresistance depends only weakly on temperature and is on the order of ?0.1. At temperatures below 100 K and for 3 < μ₀ H < 5 T, the electrical resistivity of the as-grown films decreases linearly with increasing magnetic field.     

Effect of the la concentration on the dielectric and optical properties of the transparent ferroelectric ceramics 75PbMg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>O<Subscript>3</Subscript>-25PbTiO<Subscript>3</Subscript>

The dielectric, optical, and electro-optical properties of transparent ferroelectric ceramics 75PbMg_1/3Nb_2/3O₃-25PbTiO₃ (75PMN-25PT) with different La concentrations (2, 3, and 4 at %) have been studied. It has been shown that all the samples under study undergo a diffuse phase transition, and the degree of diffuseness increases with an increase in the La concentration. The temperature dependences of the optical transmission in different regimes of applying an electric field and the quadratic electro-optical effect have been investigated. It has been found that, at room temperature, the maximum electro-optical effect is observed in the ceramics with a La concentration of 3 at %. This is explained by the fact that the measurement temperature is close to the Vogel-Fulcher temperature at which the minimum electric field is required to induce ferroelectric states from the relaxor phase.     

Magnetic and magnetoelectric properties of the Tb<Subscript>0.75</Subscript>Ho<Subscript>0.25</Subscript>Fe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> ferroborate

Single crystals of the Tb_0.75Ho_0.25Fe₃(BO₃)₄ ferroborate have been grown by the group method from a solution–melt based on bismuth trimolybdate. The magnetic and magnetoelectric properties of the ferroborate single crystals have been investigated in the temperature range from 4.2 to 300 K and in magnetic fields up to 9 T. Magnetically, this material is an antiferromagnet with the Néel temperature T _N = 38.8 K and easy-axis anisotropy. The magnitude of the magnetoelectric polarization has been found to be more than 1.5–2.0 times greater than the sum of the polarizations induced by the magnetic field for the ferroborates TbFe₃(BO₃)₄ and HoFe₃(BO₃)₄ taken in the corresponding shares.     

Phase transitions in the oxyfluoride (NH<Subscript>4</Subscript>)<Subscript>3</Subscript>NbOF<Subscript>6</Subscript>

(NH₄)₃NbOF₆ single crystals were grown, polarization-optical studies were performed, and birefringence was measured over the temperature range 90–500 K. A sequence of first-order structural phase transitions was found at temperatures T _1↓ = 259.7 K and T _2↓ = 257.7 K with temperature hysteresis δT ₁ = 0.9 K and δT ₂ = 1.9 K. The transitions are accompanied by twinning and the following change in the crystal symmetry: cubic ? tetragonal ? monoclinic. Optical second harmonic generation is found to occur at room temperature, which indicates that the cubic phase is not centrosymmetric. It is assumed that the phase transitions are ferroelastic and ferroelectric in nature.     

Impedance investigation on porous Sr-doped LaMnO<Subscript>3</Subscript> films onto Sr-Mg-doped LaGaO<Subscript>3</Subscript> electrolyte

The use of Sr-Mg-doped LaGaO₃ (LSGM), a highly conducting oxygen ion electrolyte, in intermediate temperature solid oxide fuel cells (IT-SOFC) technology requires suitable electrode materials. Because the Sr-doped LaMnO₃ (LSM) cathode coupled with the YSZ electrolyte had shown relatively good performances, it has been also suggested for LSGM-based cells. As cathode overpotential is the main performance limitation, the optimization of the LSM/LSGM interface might be of fundamental relevance in the technology development of LSGM-based IT-SOFC. LSM films with different porosities were screen printed on both faces of the LSGM pellets; their morphology and electrical properties were investigated by scanning electron microscopy and impedance spectroscopy, respectively. Porosity was induced by the addition of icing sugar (3–5 wt%) to the LSM powder during ink preparation. Homogeneous electrode layers with a thickness of about 30 μm were obtained. The higher the sugar amount, the higher the film porosity and the lower the LSM grain size. The Nyquist plots show two low frequency arcs to which the charge transfer and mass transfer process or oxygen dissociation process were associated, respectively. One can expect that the best electrochemical performances are obtained using highly porous electrode. Paper presented at the 11th EuroConference on the Science and Technology of Ionics, Batz-sur-Mer, Sept. 9–15, 2007.     

Low-frequency relaxation processes in Pb<Subscript>5</Subscript>Ge<Subscript>3</Subscript>O<Subscript>11</Subscript> ferroelectric crystals

Measurements and analysis of the temperature and frequency dependences of permittivity and losses and of the electrical resistivity of Pb₅Ge₃O₁₁ ferroelectric crystals at temperatures of 100 to 600 K and frequencies of 0.1 to 100 kHz are reported. The dielectric characteristics of the crystals exhibit, in addition to clearly pronounced anomalies near the Curie point T_C=450 K, less distinct anomalous features of the relaxation character in the range 230–260 K. The data obtained on the effect of various factors (degree of crystal polarization, crystal annealing at different temperatures and in different environments, etc.) on the low-temperature anomalies serve as a basis for discussing the possible mechanisms responsible for these anomalies. It is concluded that the low-temperature dielectric anomalies originate from thermal carrier localization in defect levels in the band gap, which entail the formation of local polarized states.     

Physical properties of Ba<Subscript>0.8</Subscript>Sr<Subscript>0.2</Subscript>TiO<Subscript>3</Subscript> thin films

The behavior of material constants in ferroelectric Ba_0.8Sr_0.2TiO₃ thin films is studied depending on the misfit strain at room temperature in the context of nonlinear thermodynamic potential of the phenomenological theory. Some constants are found to undergo drastic changes with the alternating strain at the interfaces. The gathered results allow one to evaluate the material constants for a specific film and to outline the direction in searching the ways to synthesize films with the needed properties.     

Response of the electrical resistivity and magnetoresistance of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> epitaxial films to biaxial compressive mechanical (001) or (110) strains

The behavior of the electrical resistivity and magnetoresistance of 40-to 120-nm-thick La_0.67Ca_0.33MnO₃ films grown on differently oriented lanthanum aluminate substrates was studied. The cell volume in thin (40 nm) La_0.67Ca_0.33MnO₃ films grown coherently on (001)LaAlO₃ was found to be substantially smaller. Mechanical stress relaxation in biaxially strained La_0.67Ca_0.33MnO₃ films is accompanied by an increase in the cell volume. The temperatures at which the electrical resistivity and magnetoresistance in biaxially strained La_0.67Ca_0.33MnO₃ films were maximum can differ by 60–70 K from those observed in bulk single crystals.     

Sub-unit cell layer-by-layer growth of Fe<Subscript>3</Subscript>O<Subscript>4</Subscript>, MgO,and Sr<Subscript>2</Subscript>RuO<Subscript>4</Subscript> thin films

The use of oxide materials in oxide electronics requires their controlled epitaxial growth. Recently, it was shown that Reflection High Energy Electron Diffraction (RHEED) allows the growth of oxide thin films to be monitored, even at high oxygen pressures. Here, we report the sub-unit cell molecular or block layer growth of the oxide materials Sr₂RuO₄, MgO, and magnetite using Pulsed Laser Deposition (PLD) from stoichiometric targets. Whereas a single RHEED intensity oscillation is found to correspond to the growth of a single unit cell for perovskites such as SrTiO₃ or doped LaMnO₃, in materials where the unit cell is composed of several molecular layers or blocks with identical stoichiometry, sub-unit cell molecular or block layer growth is established, resulting in several RHEED intensity oscillations during the growth of a single unit cell. PACS 61.14.Hg; 74.76.Db; 75.70.-i; 81.15.Fg     

Electrical properties of Sr<Subscript>3</Subscript>Bi<Subscript>4</Subscript>Ti<Subscript>6</Subscript>O<Subscript>21</Subscript> thin films

Highly c-axis-oriented Sr₃Bi₄Ti₆O₂₁ (SBTi) thin films were fabricated on Pt-coated Si substrates by pulsed laser deposition (PLD). The structures were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). No peaks of SrTiO₃ (STO) could be detected in the XRD pattern, indicating the existence of the SBTi single phase. Good ferroelectric hysteresis loops of the films with Pt electrodes were obtained. With an applied field of 400 kV/cm, the measured remanent polarization (P_r) and coercive field (E_c) values were 4.1 C/cm² and 75 kV/cm respectively. The films showed little fatigue after 2.22×10⁹ switching cycles: the nonvolatile polarizations decreased by less than 5% of the initial values. The dielectric constant and the loss tangent of the films were measured to be 363 and 0.04 at 100 kHz. These results might be advantageous for nonvolatile ferroelectric random access memory (NVFRAM) and dynamic random access memory (DRAM). PACS 77.84.Dy; 77.22.-d; 68.55.Jk