Magnetism manipulation in ferromagnetic/ferroelectric heterostructures by electric field induced strain

Magnetization manipulation by an electric field(E-field) in ferromagnetic/ferroelectric heterostructures has attracted increasing attention because of the potential applications in novel magnetoelectric devices and spintronic devices, due to the ultra-low power consumption of the process. In this review, we summarize the recent progress in E-field controlled magnetism in ferromagnetic/ferroelectric heterostructures with an emphasis on strain-mediated converse magnetoelectric coupling. Firstly, we briefly review the history, the underlying theory of the magnetoelectric coupling mechanism, and the current status of research. Secondly, we illustrate the competitive energy relationship and volatile magnetization switching under an E-field. We then discuss E-field modified ferroelastic domain states and recent progress in non-volatile manipulation of magnetic properties. Finally, we present the pure E-field controlled 180° in-plane magnetization reversal and both E-field and current modified 180° perpendicular magnetization reversal.     

Distribution and amplification of an electric field in ferroelectric-dye heterostructures

The distribution of an electric field has been investigated in Langmuir-Blodgett thin-film heterostructures prepared by sequentially transferring layers of the ferroelectric copolymer poly(vinylidene fluoride-trifluoroethylene) P(70% VDF 70% ?C30% TrFE) and the azo dye. An alternating-current voltage applied to the electrodes is unevenly distributed across layers of the dye and the copolymer in accordance with a constant induction along the normal to the heterostructure. The electric-field-induced shift of the absorption spectrum of the dye serves as a probe of the electric field and reveals a noticeable amplification of the electric field in the dye layers (by a factor of 2?C7). The electric field in the ferroelectric is directed opposite to the direction of the electric field applied to the electrodes of the heterostructure.     

Time-dependent tunneling of wave-packets through heterostructures in an applied field

We investigate time-dependent tunneling of wave-packets through heterostructures by numerically solving the time-dependent effective mass Schrödinger equation. In particular, we analyze the effect of the form of the initial wave-packet on the energy-dependent transmission coefficient, discuss various time-scales related to resonant tunneling, and study effects of applied fields.     

Modulation of strain,electric field and organic cation rotation on the band gap and electronic structures of organic-inorganic hybrid perovskite CH3NH3PbI3

Band gap modulation engineering is an important step in the application of optoelectronic materials. In this paper, the first-principles calculations were carried out to study the influence of strain, external electric field, spatial orientation of organic cation on the band gaps and electronic structures of organic-inorganic hybrid halide perovskites CH₃NH₃PbI₃. The results show that both the uniform strain and the tetragonal deformation can modulate the band gap obviously. The electric field of 0.2 V/Å is the critical point of the band gap modulation. The band gap increases when an electric field is applied from 0 to 0.2 V/Å. The electric field above 0.2 V/Å will cause the band gap to decrease. The spatial orientation of the organic cation also has modulation influence on the band gap of CH₃NH₃PbI₃, but has no effect on the direct semiconductor characteristics. The above results will be helpful to study the band gap modulation of other organic-inorganic hybrid halide perovskites.     

Direct-to-indirect band gap conversion by application of electric field in the GaSbAlSb quantum well system

We propose the possibility of direct-to-indirect band-gap conversion in the GaSb/AlSb quantum well (QW) system by application of an electric field. This effect arises because the Г- and L bands are closely-spaced in energy in GaSb. As the electric field increases, the L-level in the proposed quantum well moves lower in energy than the Г-level. We have carried out theoretical calculations in the GaSb/AlSb system that show that such an effect is feasible at moderate electric fields, such as can be obtained by reverse biasing a p-i-n diode, provided that the wells comprise (Al,Ga)SB with about 10% Al, with a thickness of 100 Å. The effects of this band-gap crossover should show up in the intensity and lifetime properties of the luminescence of these quantum-well structures as a function of applied bias.     

The exact solutions of Kane equations which have position-dependence band gap in an external non-uniform electric field

The energy spectrum of electrons in narrow band gap semiconductor nanocrystals which have position dependence band gap in an external non-uniform electric field which compensate the position dependence of the band edge of the valence band potential are studied theoretically taking into account the non-parabolicity of electrons in dispersion laws. The exact solutions of the Kane equations with strong spin–orbital interaction are determined with and without magnetic field via the band gap changes as a function of the position. The position dependence of the band gap is taken parabolically.     

The bound polaron in an electric field in polar semiconductor heterostructures

We have calculated the ionization energy of a bound polaron confined in general step quantum wells (QWs) in the presence of an electric field, in which the coupling of an electron with confined bulk-like LO phonons, half-space LO phonons and interface phonons is considered. In particular, the interaction of the impurity with the various phonon modes is also included in QWs. Results have been obtained as a function of the barrier height, the well width, the electric field intensities and the position coordinates of the impurity in the QWs. Our numerical calculations clearly show that the interaction between the impurity and the phonon field plays an important role in screening the Coulomb interaction. It is shown that the cumulative effect of the electron–phonon coupling and the impurity–phonon coupling can contribute appreciably to the donor ionization energy. Only for a certain range of well widths can we neglect all the polaronic effects.     

Modulation of four-wave mixing via photonic band gap

The dressed four-wave mixing （FWM） in a four-level S5Rb atomic system, experimentally demon- strated in this paper, is comprised by two coexisting processes. One is emission signal due to enhanced nonlinear via electromagnetically induced transparency （EIT）. The other is the Bragg reflection of probe beam because of the created photonic band gap （PBG）, which is affected by both linear and third-order nonlinear susceptibility. Moreover, we have demonstrated that different experimental parameters can significantly influence the measured signal with flexibly controlled PBG. These studies are found useful for understanding the fundamental mechanisms in generated FWM processing.     

Modulation of curved graphene nanoribbon optical absorption spectra by an electric field

The optical absorption spectra of curved graphene nanoribbons exhibit rich dependence on the magnitude and direction of the electric field. The wave functions have spatial symmetry originating from the equivalence of the two sublattices. There exists an optical selection rule caused by the special structure of the Hamiltonian matrix and the wave function spatial symmetry. An electric field may or may not disrupt such spatial symmetry depending on its direction and magnitude. Therefore, the optical selection rule can be controlled. In addition, the two-fold degeneracy of the optical absorption peaks is lifted by the electric field, and the variations of the absorption peak energies with the field are explored.     

Strong amplification of an electric field and electro-optical response in ultrathin heterostructures ferroelectric-linear dielectric

An electroded heterostructure consisting of a dye layer sandwiched between two polymer ferroelectric layers is discussed. The dye layer plays a role of the probe of the electric field measured by an electroabsorption technique. Using this new method the electric field in ferroelectric and dielectric layers can be measured separately. When an a.c. voltage is applied to the heterostructure, the electric field in the dye layer increases 2.2 times (up to 0.55 GV/m), whereas the field in the ferroelectric decreases 2 times with respect to the average field in the entire structure. Moreover, the dye layer sandwiched between the ferroelectric layers may stand without breakdown the fields 5–7 times higher than a neat reference dye layer confined between metal electrodes. Therefore, the performance of electro-optical, electromechanical and other field controlled devices may be improved considerably when their functional materials are placed between ferroelectrics layers.     

Lasing characteristics of a pendant drop deformed by an applied electric field

The lasing properties of an oval-shaped resonant cavity (ORC) with a continuously variable aspect ratio have been studied. The ORC was formed with a dye-doped pendant drop placed inside a variable static electric field. When the drop ORC was pumped by a nitrogen laser, lasing from the ORC was found to have strong directional emission characteristics and an intensity enhancement factor as great as 19.5. Calculated results of light rays escaping from ORC's by refraction are in good agreement with the experimental data.     

Phase diagram of water under an applied electric field

Simulations are used to investigate for the first time the anisotropy of the dielectric response and the effects of an applied electric field E(ex) on the phase diagram of water. In the presence of electric fields ice II disappears from the phase diagram. When E(ex) is applied in the direction perpendicular to the ac crystallographic plane the melting temperatures of ices III and V increase whereas that of ice Ih is hardly affected. Ice III also disappears as a stable phase when E(ex) is applied in the direction perpendicular to the ab plane. E(ex) increases by a small amount the critical temperature and reduces slightly the temperature of the maximum density of liquid water. The presence E(ex) modifies all phase transitions of water but its effect on solid-solid and solid-fluid transitions seems to be more important and different depending on the direction of E(ex).     

Synthesis and photonic band gap characterization of high quality photonic crystal heterostructures

High quality photonic crystal heterostructures with a thin titania planar defect layer between its two constitutional photonic crystals were fabricated and their structural and optical properties were analyzed. The results suggest that the thin planar defect layer is beneficial to separate the two constitutional photonic crystals from each other and to reduce the roughness of the interface. The quality of the resulting photonic crystal heterostructures is improved largely and the main features of the photonic band gaps of the two constitutional photonic crystals are inherited. The predominant optical quality of these heterostructures (e.g. deep double photonic band gaps and steep photonic band edges) may afford new flexibility and functionality for engineered photonic behavior in practical devices such as late-model light-operated switches.     

Emission of terahertz radiation from GaAsN/GaAs heterostructures in an electric field

Emission of terahertz radiation from strained Be-doped GaAsN layers has been revealed at 4.2 K in postbreakdown electric fields. Heavy and light hole subbands are split in strained layers, and, along with localized acceptor states, resonant states arise. The spectrum of terahertz radiation has been obtained, the current-voltage characteristics of the samples were investigated, and the energy spectra of acceptors were calculated. Peaks in the spontaneous emission spectrum correlate well with the results of the energy spectrum calculations. The transitions between the resonant and localized states of the acceptors make the main contribution to the terahertz radiation intensity.     

Nonvolatile control of transport and magnetic properties in magnetoelectric heterostructures by electric field

Nonvolatile manipulation of transport and magnetic properties by external electric field is significant for information storage. In this study, we investigate the electric field control of resistance and magnetization in a magnetoelectric heterostructure comprising an electronic phase-separated La_(0.325)Pr_(0.3)Ca_(0.375)MnO_3(LPCMO) thin film and a ferroelectric(011)-oriented 0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3(PMN-PT) substrate. In a room-temperature poled sample, the metal-toinsulator transition temperature of an LPCMO film increases and the resistance decreases with variation in the effect of the remnant strain. Meanwhile, the increase in the magnetization of the sample is observed as well. This effect would be beneficial for the development of novel storage devices with low power consumption.     

Tunable magnetic interaction by an applied electric field in a Co-adsorbed SiC monolayer

The magnetic properties of Co-adsorbed SiC monolayer under an external electric field are investigated using first-principles method. In the absence of the electric field, the interaction between two Co atoms is ferromagnetic, which is originated by the p?d hybridization between Co and its neighboring C and Si atoms. When an electric field was introduced along the c axis, the interaction between two Co dopants switched from ferromagnetic to antiferromagnetic, which could be dominated by the competition between p?d exchange and superexchange. Moreover, the magnetic anisotropy prefers to parallel to the a axis and it seems not to be turn into the c axis under the electric field.     

Electronic and optical properties of 3N-doped graphdiyne/MoS2 heterostructures tuned by biaxial strain and external electric field

The construction of van der Waals (vdW) heterostructures by stacking different two-dimensional layered materials have been recognised as an effective strategy to obtain the desired properties. The 3N-doped graphdiyne (N-GY) has been successfully synthesized in the laboratory. It could be assembled into a supercapacitor and can be used for tensile energy storage. However, the flat band and wide forbidden bands could hinder its application of N-GY layer in optoelectronic and nanoelectronic devices. In order to extend the application of N-GY layer in electronic devices, MoS₂ was selected to construct an N-GY/MoS₂ heterostructure due to its good electronic and optical properties. The N-GY/MoS₂ heterostructure has an optical absorption range from the visible to ultraviolet with a absorption coefficient of 10⁵ cm^-1. The N-GY/MoS₂ heterostructure exhibits a type-Ⅱ band alignment allows the electron-hole to be located on N-GY and MoS₂ respectively, which can further reduce the electron-hole complexation to increase exciton lifetime. The power conversion efficiency of N-GY/MoS₂ heterostructure is up to 17.77%, indicating it is a promising candidate material for solar cells. In addition, the external electric field and biaxial strain could effectively tune the electronic structure. Our results provide a theoretical support for the design and application of N-GY/MoS₂ vdW heterostructures in semiconductor sensors and photovoltaic devices.     

Modulation of terahertz generation in dual-color filaments by an external electric field and preformed plasma

Terahertz generation driven by dual-color filaments in air is demonstrated to be remarkably enhanced by applying an external electric field to the filaments. As terahertz generation is sensitive to the dual-color phase difference, a preformed plasma is verified efficiently in modulating terahertz radiation from linear to elliptical polarization. In the presence of preformed plasma, a dual-color filament generates terahertz pulses of elliptical polarization and the corresponding ellipse rotates regularly with the change of the preformed plasma density. The observed terahertz modulation with the external electric field and the preformed plasma provides a simple way to estimate the plasma density and evaluate the photocurrent dynamics of the dual-color filaments. It provides further experimental evidence of the photo-current model in governing the dual-color filament driven terahertz generation processes.