Dielectric losses in the triglycine sulfate crystal under heating and cooling

Temperature dynamics of the dielectric spectra and domain structure in the triglycine sulfate (TGS) hydrogen-containing ferroelectric under heating and cooling has been studied using the dielectric spectroscopy and atomic-force microscopy methods. The dielectric spectra are analyzed by the temperature-frequency dependences of the losses ε″ and by the temperature behavior of the maximum losses ε″_max in the dispersion region at frequencies ranging from 102 to 106 Hz. A dynamic conductivity model is proposed for calculating temperature dependences of losses ε″_max. The domain structure dynamics during the heating and cooling of the TGS crystal near the phase transition is studied using the in situ piezoresponse force microscopy. It is experimentally and theoretically shown that the relaxation dispersion is governed by the binding of strongly correlated dipoles with the main lattice that serves as a thermostat.     

Changes in the microhardness and dielectric permittivity of TGS crystals after their exposure to a static magnetic field or ultralow crossed fields in the EPR scheme

Changes are found in the microhardness and dielectric permittivity of triglycine sulfate (TGS) crystals after magnetic treatment in a permanent magnetic field or in the scheme of electron paramagnetic resonance (EPR) using the Earth’s magnetic field. The temporal kinetics of microhardness reduction and the rise in dielectric permittivity (as along with their recovery) are nearly identical. The effects disappear when the crystal’s axis of symmetry is parallel to the static magnetic field in both variants of exposure.     

Investigation of domain structure of TGS single crystal after a transverse electric field by piezoresponse force microscopy

An investigation of the influence of electric field transverse to the ferroelectric axis b_HOP and parallel to c_HOP axis of triglycine sulfate (TGS) single crystal on ferroelectric domain structure was performed by piezoresponse force microscopy. To check if the applied electric field changed the dielectric properties and ferroelectric domain structure the hysteresis loop measurements were carried out as well as observations of domain structure by the liquid crystal technique. The investigation revealed existence of blocked domains in the crystal modified by the electric field TGS.     

Magnetic field effects on the electric modulus properties of nematic mixture E7

The molecular dynamics of the homogeneously aligned nematic liquid crystal mixture E7 subject to a magnetic field has been studied. The dielectric spectra study has revealed a low bias magnetic field effect on the evolution of dielectric relaxation spectra occurred at lower (∼kHz) (δ-relaxation) and higher (∼MHz) (α-relaxation) frequency regions. The complex electric modulus, which converted from experimental dielectric spectra, has been analyzed with theoretical model of Debye relaxation. The obtained fitting parameters of relaxation time and strength of dielectric components are shown to vary systematically with the strength of applied magnetic field. A microscopic molecular dynamic model has been proposed to describe the two-step variation of E7 molecular under the bias magnetic field. The results provide implication for magneto-modulation of liquid crystal molecular dynamics under the bias magnetic field.     

Dielectric relaxation in nanopillar NiFe–silicon structures in high magnetic fields

We explore the dielectric relaxation properties of NiFe nanowires in a nanoporous silicon template. Dielectric data of the NiFe–silicon structure show a strong relaxation resonance near 30 K. This system shows Arrhenius type of behavior in the temperature dependence of dissipation peaks vs. frequency. We report magnetic field dependence of dipolar relaxation rate and the appearance of structure in the dielectric spectrum related to multiple relaxation rates. A magnetic field affects both the exponential prefactor in the Arrhenius formula and the activation energy. From this field dependence we derive a simple exponential field dependence for the prefactor and linear field approximation for the activation energy which describes the data. We find a significant angular dependence of the dielectric relaxation spectrum for regular silicon and nanostructured silicon vs. magnetic field direction, and describe a simple sum rule that describes this dependence. We find that although similar behavior is observed in both template and nanostructured materials, the NiFe–silicon shows a more complex, magnetic field dependent relaxation spectrum.     

Influence of weak pulsed magnetic fields on triglycine sulfate crystals

The influence of weak (≤0.02 T) pulsed magnetic fields on the ferroelectric and dielectric characteristics of nominally pure triglycine sulfate crystals was detected for the first time. A short-term (seconds) pulsed magnetic impact caused long-term (hundreds of hours) changes in the coercive field and the temperature dependences of the dielectric constant, the dissipation factor, and the relaxation time of the dielectric constant near the ferroelectric phase transition. It was assumed that the effects detected were caused by unpinning of domain walls and dislocations from stoppers, followed by the formation of new defect and domain structures.     

Temperature dynamics of triglycine sulfate domain structure according to atomic force microscopy and dielectric spectroscopy data

A hydrogen-containing ferroelectric triglycine sulfate (TGS) was comprehensively studied with an atomic force microscopy (AFM) and dielectric spectroscopy. The domain structure dynamics was in situ investigated with piezoresponse force microscopy (PFM) during heating and cooling the TGS crystal near phase transition. Relaxation dependencies of domain boundaries general perimeter and domain dimensions were obtained. TGS dielectric spectra measured at the frequency range from 10 to 10¹¹ Hz were analyzed on basis of significant contribution of conductivity into the dielectric response of ferroelectrics and a good agreement with the experimental data was received. It allows us to obtain more information about temperature dynamics of the domain structure.     

Growth of 4-(dimethylamino) benzaldehyde doped triglycine sulphate single crystals and its characterization

Single crystals of triglycine sulphate (TGS) doped with 1 mol% of 4-(dimethylamino) benzaldehyde (DB) have been grown from aqueous solution at ambient temperature by slow evaporation technique. The effect of dopant on the crystal growth and dielectric, pyroelectric and mechanical properties of TGS crystal have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. FTIR spectra were employed to confirm the presence of 4-(dimethylamino) benzaldehyde in TGS crystal, qualitatively. The dielectric permittivity has been studied as a function of temperature by cooling the sample at a rate of 1 °C/min. An increase in the Curie temperature T_c=51 °C (for pure TGS, T_c=48.5 °C) and decrease in maximum permittivity has been observed for doped TGS when compared to pure TGS crystal. Pyroelectric studies on doped TGS were carried out to determine pyroelectric coefficient. The Vickers's hardness of the doped TGS crystals along (0 1 0) face is higher than that of pure TGS crystal for the same face. Domain patterns on b-cut plates were observed using scanning electron microscope. The low dielectric constant, higher pyroelectric coefficient and higher value of hardness suggest that doped TGS crystals could be a potential material for IR detectors.     

Pyroelectric coefficient manipulation in doped TGS crystals

Pure and l-alanine doped Triglycine sulphate (TGS) crystals were grown in paraelectric phase (∼52 °C). Doped crystals show unequal growth rates along the ferroelectric axis. Pure TGS crystals show peculiar dielectric behavior in the ferroelectric phase, after crossing up and down the Curie point in two successive runs between room temperature and 80 °C. Much higher and unstable permittivity was found returning in the ferroelectric phase. At constant temperature (35 °C), permittivity follows a relaxation process, characterized by two relaxation times. l-Alanine doped TGS crystal shows more than one order of magnitude smaller permittivity and dielectric losses. Internal bias field of ∼1 kV/cm, induced by the dopant, made the crystal almost monodomain and pined polarization in one direction. Pyroelectric coefficient measurements were performed at constant heating rate of the samples, using a computer controlled He cryostat and Keithley 6517 electrometer. The temperature dependence of P⁺ polarization component, obtained by computer integration of the pyroelectric coefficient, was measured on a large temperature interval (−20/+80 °C). Pyroelectric coefficient of the doped samples was also measured by the same procedure, using a dc bias electric field, pointing in the opposite direction to the pined polarization. The polarization could be reversed, on the whole temperature range, by dc fields higher than bias or coercive field. Surprisingly, for the first time, the pyroelectric coefficient (p) was found constant on quite large temperature intervals. Doped TGS crystals show much smaller values of permittivity ?_r versus the pure one and consequently, get higher figure of merit M = p/?_r. The pyroelectric coefficient of this material can be tailored to become constant on a defined temperature range, under a dc field control. This characteristic makes this material valuable to be used as pyroelectric material for IR devices.     

Domain structure of triglycine sulfate family crystals according to the data of piezoresponse force microscopy and their macroscopic dielectric properties

The domain structure of triglycine sulfate (TGS) crystals, specifically nominally pure crystals and those with impurities (LADTGS+ADP, DTSG, and TGS:Cr), is studied by piezoresponse force microscopy (PFM). The measured macroscopic dielectric characteristics are compared with microscopic data on the domain structure of these crystals. The values of the spontaneous polarization, bias voltage, and dielectric permeability as a function of temperature ?(T) are shown to be in agreement with the PFM data. The anomalous behavior of the dependence ?(T) was observed for LADTGS+ADP crystals.     

Polarization- and direction-independent defect modes in a wide incident-angle range within Bragg gaps by photonic heterostructures containing negative-index materials

We propose a type of photonic heterostructure by combining dielectric one-dimensional (1D) defective photonic crystals (PCs) and magnetic 1D defective PCs. Both of the two PCs consist of alternating positive-index-material (PIM) layers with a negative-index-material (NIM) defect layer. It is demonstrated by transfer matrix method that there is a polarization- and direction-independent defect mode in a wide incident-angle range within Bragg gaps in the heterostructure. The field distributions prove that the dielectric 1D defective PC benefits to achieve the approximately omnidirectional defect mode for TE waves while the magnetic 1D defective PC benefits for TM waves. Such a structure is useful for designing polarization-independent and omnidirectional or large incident angle narrow-passband filters in optical devices.     

Crystal growth and dielectric, mechanical, electrical and ferroelectric characterization of n-bromo succinimide doped triglycine sulphate crystals

Single crystals of triglycine sulphate (TGS) doped with n-bromo succinimide (NBS) were grown at ambient temperature by the slow evaporation technique. An aqueous solution containing 1-20 mol% of n-bromo succinimide as dopant was used for the growth of NBSTGS crystals. The incorporation of NBS in TGS crystals has been qualitatively confirmed by FTIR spectral data. The effect of the dopant on morphology and crystal properties was investigated. The cell parameters of the doped crystal were determined by the powder X-ray diffraction technique. The dielectric constant of NBS doped TGS crystal was calculated along the ferroelectric direction over the temperature range of 30-60 °C. The dielectric constant of NBSTGS crystals decrease with the increase in NBS concentration and considerable shift in the phase transition temperature (T_C) towards the higher temperature observed. Pyroelectric studies on doped TGS were carried out to determine the pyroelectric coefficient. The emergence of internal bias field due to doping was studied by collecting P-E hysteresis data. Temperature dependence of DC conductivity of the doped crystals was studied and gradual increase in the conductivity with the increase of dopant concentration was observed. The activation energy (ΔE) calculated was found to be lower in both the ferroelectric and the paraelectric phases for doped crystals compared to that of pure TGS. The micro-hardness studies were carried out at room temperature on thin plates cut perpendicular to the b-axis. Less doped TGS crystals show higher hardness values compared to pure TGS. Piezoelectric measurements were also carried out on 010 plates of doped TGS crystals at room temperature.     

Growth,structural, mechanical,spectral and dielectric characterization of NaCl-added Triglycine sulfate single crystals

Pure and sodium chloride (NaCl)-added Triglycine sulfate (TGS) crystals were grown from aqueous solutions by slow evaporation technique. The values of concentration of dopants in the mother solution were 0.2, 0.6 and 1 mol%. The solubility of the grown samples have been found out at various temperatures. The determination of unit cell parameters was carried out by single crystal XRD method and found that the grown crystals crystallize in monoclinic structure. The dielectric characterization for the pure and NaCl-doped TGS crystals was performed by measuring the dielectric parameters like dielectric constant and dielectric loss with various frequencies in the range 10²–10⁶ Hz and with the temperatures ranging from 30 to 70 °C and this study reveals an increase of dielectric constant and loss with the increase of NaCl concentration. Studies on mechanical properties like microhardness and density of the grown pure and NaCl-doped TGS crystals were carried out. UV–Visible transmittance studies were carried out for the grown samples. A sharp fall in the transmittance is observed at 228 nm for pure and NaCl-doped TGS crystals. Atomic absorption spectroscopic (AAS) study was done on the NaCl-doped TGS crystals to ascertain the presence of Na⁺ ions in the lattice.     

The impedance-characteristic method in the study of specific temperature features of dielectric anomaly suppression in triglycine sulfate

The reflection and absorption coefficients in a waveguide loaded on ferroelectric triglycine sulfate (TGS), which has a layered domain structure near the phase transition, are calculated by the impedance-characteristic method. The calculated and experimental data do not reveal any correlations with the specific temperature features in the TGS dielectric response to microwave irradiation. The mechanism of the microwave effect is discussed.     

基于磁光子晶体的低损耗窄带THz滤波器

本文提出一种采用石榴石型铁氧体磁性材料的太赫兹滤波器,利用波导线缺陷和腔内点缺陷的耦合特性,通过改变腔内介质柱半径及分布,实现对某个波长的耦合,达到了高效率滤波的功能;改变外磁场的大小,影响铁氧体材料的磁导率变化,使谐振频率发生改变,从而对THz波进行滤波.应用平面波展开法(PWM)和时域差分有限法(FDTD)进行仿真分析,研究结果表明,该滤波器其插入损耗为0.0997 d B,3 d B带宽为8.22 GHz,实现了低损耗窄带滤波.     

Two forms of polarization relaxation in polydomain ferroelectrics in an electric field

The characteristic features of the polarization and depolarization kinetics of polydomain ferroelectrics with square and narrow “extended” dielectric hysteresis loops are investigated for the model of TGS and Rb₂ZnCl₄ crystals. It is shown that for the second crystal, in contrast to the first crystal, the local free energy is asymmetric relative to the direction of polarization, the coercive field does not have a definite value, and only part of the crystal volume participates in the slow thermoactivational relaxation. The slow relaxation follows a universal empirical power law in all cases. The distribution functions of the relaxation times in crystals are constructed on the basis of experimental data, and comparative estimates are made of the relaxation parameters and the parameters of the energy barriers for domain walls. Fiz. Tverd. Tela (St. Petersburg) 41, 499–504 (March 1999)     

Dielectric properties of film materials based on polyethylene terephthalate and polycarbonate with ferroelectric inclusions

The dielectric properties of film materials based on polyethylene terephthalate and polycarbonate with inclusions of triglycine sulfate (TGS) and TGS with admixture of L, ??-alanine (ATGS) have been studied. An increase in the temperature of the phase transition in these materials as compared to in bulk TGS and ATGS has been revealed.     

Low frequency dielectric relaxation in lightly doped VO2 single crystals

The relative effects of intrinsic and extrinsic defects on the dielectric relaxation of VO₂ crystals have been investigated by measurement of the dielectric parameters of undoped crystals and crystals doped with Ti, Cr and Al. Measurements have been made in the temperature range 77–250 K and the frequency range 50–100 kHz. The dielectric data is described by a Cole-Cole distribution function with a distribution parameter α ? 0.45 which decreases with increasing temperature. However, the distribution of activation energies g(E) derived from α is almost independent of temperature. The overall dielectric relaxation behaviour is determined primarily by the intrinsic defect structure of VO₂, and the effect of impurities is observed only in changes in the low frequency limiting (static) value of the dielectric constant. The same transport mechanism is found to determine the dc conductivity and the dielectric relaxation and evidence is presented that the dielectric relaxation is of dipolar origin.     

Defect mode suppression in a photonic crystal with a magnetic defect in the ferromagnetic resonance region

The specific features of the transmission and reflection spectra of a one-dimensional photonic crystal structure with a magnetically active layer placed between dielectric Bragg mirrors have been investigated. If the magnetic resonance frequency coincides with the frequency of the defect mode in one of the photonic bands, the defect mode in the photonic crystal can be completely suppressed, which makes it possible to effectively control the spectrum of such a structure by an external magnetic field.     

NMR study of triglycine sulphate (TGS) in electric field perpendicular to the ferroelectric axis

The electric field applied perpendicular to the ferroelectric axis bHOP (in Hoshino, Okaya, Pepinsky notation) of the TGS crystal, results new domain structure-striped domains with walls parallel to the cHOP axis. The process is accompanied by changes of the dielectric properties. We present the results of NMR study of TGS crystal with electric field applied parallel to the cHOP or to the cHOP x bHOP directions. After 12 h application of the DC field, a decrease in amplitude of the 1H NMR central line is observed.