Effect of CeO2 buffer layer thickness on the structures and properties of YBCO coated conductors

Biaxially textured YBa₂Cu₃O_7−x (YBCO) films were grown on inclined-substrate-deposited (ISD) MgO-textured metal substrates by pulsed laser deposition. CeO₂ was deposited as a buffer layer prior to YBCO growth. CeO₂ layers of different thickness were prepared to evaluate the thickness dependence of the YBCO films. The biaxial alignment features of the films were examined by X-ray diffraction 2θ-scans, pole-figure, ?-scans and rocking curves of Ω angles. The significant influence of the CeO₂ thickness on the structure and properties of the YBCO films were demonstrated and the optimal thickness was found to be about 10 nm. High values of T_c = 91 K and J_c = 5.5 × 10⁵ A/cm² were obtained on YBCO films with optimal CeO₂ thickness at 77 K in zero field. The possible mechanisms responsible for the dependence of the structure and the properties of the YBCO films on the thickness of the CeO₂ buffer layers are discussed.     

Reaction of water with Ce-Au(1 1 1) and CeOx/Au(1 1 1) surfaces: Photoemission and STM studies

This article reports photoemission and STM studies for the adsorption and dissociation of water on Ce-Au(1 1 1) alloys and CeO_x/Au(1 1 1) surfaces. In general, the adsorption of water at 300 K on disordered Ce-Au(1 1 1) alloys led to O-H bond breaking and the formation of Ce(OH)_x species. Heating to 500-600 K induced the decomposition or disproportionation of the adsorbed OH groups, with the evolution of H₂ and H₂O into gas phase and the formation of Ce₂O₃ islands on the gold substrate. The intrinsic Ce ↔ H₂O interactions were explored by depositing Ce atoms on water multilayers supported on Au(1 1 1). After adsorbing Ce on ice layers at 100 K, the admetal was oxidized immediately to yield Ce³⁺. Heating to room temperature produced finger-like islands of Ce(OH)_x on the gold substrate. The hydroxyl groups dissociated upon additional heating to 500-600 K, leaving Ce₂O₃ particles over the surface. On these systems, water was not able to fully oxidize Ce into CeO₂ under UHV conditions. A complete Ce₂O₃ → CeO₂ transformation was seen upon reaction with O₂. The particles of CeO₂ dispersed on Au(1 1 1) did not interact with water at 300 K or higher temperatures. In this respect, they exhibited the same reactivity as does a periodic CeO₂(1 1 1) surface. On the other hand, the Ce₂O₃/Au(1 1 1) and CeO_2−x/Au(1 1 1) surfaces readily dissociated H₂O at 300-500 K. These systems showed an interesting reactivity for H₂O decomposition. Water decomposed into OH groups on Ce₂O₃/Au(1 1 1) or CeO_2−x/Au(1 1 1) without completely oxidizing Ce³⁺ into Ce⁴⁺. Annealing over 500 K removed the hydroxyl groups leaving behind CeO_2−x/Au(1 1 1) surfaces. In other words, the activity of CeO_x/Au(1 1 1) for water dissociation can be easily recovered. The behavior of gold-ceria catalysts during the water-gas shift reaction is discussed in light of these results.     

Low energy Ar-ion bombardment effects on the CeO2 surface

The structure and electronic properties of epitaxial grown CeO₂(1 1 1) thin films before and after Ar⁺ bombardment have been comprehensively studied with synchrotron radiation photoemission spectroscopy (SRPES). Ar⁺ bombardment of the surface causes a new emission appearing at 1.6 eV above the Fermi edge which is related to the localized Ce 4f¹ orbital in the reduced oxidation state Ce³⁺. Under the condition of the energy of Ar ions being 1 keV and a constant current density of 0.5 μA/cm², the intensity of the reduced state Ce³⁺ increases with increasing time of sputtering and reaches a constant value after 15 min sputtering, which corresponds to the surface being exposed to 2.8 × 10¹⁵ ions/cm². The reduction of CeO₂ is attributed to a preferential sputtering of oxygen from the surface. As a result, Ar⁺ bombardment leads to a gradual buildup of an, approximately 0.69 nm thick, sputtering altered layer. Our studies have demonstrated that Ar⁺ bombardment is an effective method for reducing CeO₂ to CeO_2−x and the degree of the reduction is related to the energy and amount of Ar ions been exposed to the CeO₂ surface.     

A density functional theory study of formaldehyde adsorption and oxidation on CeO2(1 1 1) surface

The effects of different oxygen species and vacancies on the adsorption and oxidation of formaldehyde over CeO₂(1 1 1) surface were systematically investigated by using density functional theory (DFT) method. On the stoichiometric CeO₂(1 1 1) surface, the C-H bond rupture barriers of chemisorbed formaldehyde are much higher than that of formaldehyde desorption. On the reduced CeO₂(1 1 1) surface, the energy barriers of C-H bond ruptures are less than those on the stoichiometric CeO₂(1 1 1) surface. If the C-H bond rupture occurs, CO and H₂ form quickly with low energy barriers. When O₂ adsorbs on the reduced (1 1 1) surface (O₂/O_v species), the C-H bond rupture barriers of formaldehyde are greatly reduced in comparison with those on the stoichiometric CeO₂(1 1 1) surface. If O₂ adsorbs on oxygen vacancy at sub-layer surface, its oxidative roles on formaldehyde are much similar to that of O₂/O_v species.     

RAIRS studies of CO adsorption on Pd/CeO2−x(1 1 1)/Pt(1 1 1)

Reflection absorption infrared spectroscopy (RAIRS) has been used to investigate the adsorption of CO on CeO_2−x-supported Pd nanoparticles at room temperature. The results show that when CeO_2−x is initially grown on Pt(1 1 1), a small proportion of the surface remains as bare Pt sites. However, when Pd is deposited onto CeO_2−x/Pt(1 1 1), most of the Pd grows directly on top of the CeO_2−x(1 1 1). RAIR spectra of CO adsorption on 1 ML Pd/CeO_2−x/Pt(1 1 1) show a broad CO-Pd band, which is inconsistent with a single crystal Pd surface. However, the 5 ML and 10 ML Pd/CeO_2−x/Pt(1 1 1) spectra show vibrational bands consistent with the presence of Pd(1 1 1) and (1 0 0) faces, suggesting the growth of Pd nanostructures with well defined facets.     

Formation of alumina-ceria mixed oxide in model systems

Interaction of aluminium with cerium oxide was studied by photoelectron spectroscopy of Al/CeO₂(1 1 1) and CeO₂/Al(1 1 1) model systems. It was found in both cases that metallic aluminium was immediately oxidized, CeO₂ was partially reduced and a mixed oxide with cerium present as Ce³⁺ was formed. The compound is probably cerium aluminate CeAlO₃ mixed with Al₂O₃ or Ce₂O₃. In both cases the intermixing was limited by the diffusion of aluminium into ceria. The excess of deposited material above this limit formed AlO_x and CeO₂ overlayers on the top of the mixed oxide + aluminate/CeO₂ and mixed oxide + aluminate/Al films, respectively.     

Surface structure and solidification morphology of aluminum nanoclusters

Classical molecular dynamics simulation with embedded atom method potential had been performed to investigate the surface structure and solidification morphology of aluminum nanoclusters Al_n (n=256, 604, 1220 and 2048). It is found that Al cluster surfaces are comprised of (1 1 1) and (0 0 1) crystal planes. (1 1 0) crystal plane is not found on Al cluster surfaces in our simulation. On the surfaces of smaller Al clusters (n=256 and 604), (1 1 1) crystal planes are dominant. On larger Al clusters (n=1220 and 2048), (1 1 1) planes are still dominant but (0 0 1) planes cannot be neglected. Atomic density on cluster (1 1 1)/(0 0 1) surface is smaller/larger than the corresponding value on bulk surface. Computational analysis on total surface area and surface energies indicates that the total surface energy of an ideal Al nanocluster has the minimum value when (0 0 1) planes occupy 25% of the total surface area. We predict that a melted Al cluster will be a truncated octahedron after equilibrium solidification.     

Calculation of the surface energy of bcc transition metals by using the second nearest-neighbor modified embedded atom method

The surface energies for 24 surfaces of all bcc transition metals Fe, Cr, Mo, W, V, Nb and Ta have been calculated by using the second nearest-neighbor modified embedded atom method. The results show that, for all bcc transition metals, the order among three low-index surface energies E_(1 1 0) < E_(1 0 0) < E_(1 1 1) is in agreement with experimental results and E_(1 1 0) is also the lowest surface energy for various surfaces. So that from surface energy minimization, the (1 1 0) texture should be favorable in the bcc films. This is also consistent with experimental results. The surface energy for the other surfaces increases linearly with increasing angle between the surfaces (h k l) and (1 1 0). Therefore, a deviation of a surface orientation from (1 1 0) can be used to estimate the relative values of the surface energy.     

Enhanced gas-sensing behaviour of Ru-doped SnO2 surface: A periodic density functional approach

A theoretical study on Ru-doped rutile SnO₂(1 1 0) surface has been carried out by means of periodic density functional theory (DFT) at generalized gradient approximation (GGA-RPBE) level with a periodic supercell approach. Electronic structure analysis was performed based on the band structure and partial density of states. The results provide evidence that the electronic structures of SnO₂(1 1 0) surface are modified by the surface Ru dopant, in which Ru 4d orbital are located at the edge of the band gap region. It is demonstrated that molecular oxygen adsorption characteristics on stoichiometric SnO₂(1 1 0) surface are changed from endothermic to exothermic due to the existence of surface Ru dopant. The dissociative adsorption of molecular oxygen on the Ru_5c/SnO₂(1 1 0) surface is exothermic, which indicates that Ru could act as an active site to increase the oxygen atom species on SnO₂(1 1 0) surface. Our present study reveals that the Ru dopant on surface is playing both electronic and chemical role in promoting the SnO₂ gas-sensing property.     

Growth of ultra-thin cerium oxide layers on Cu(1 1 1)

The reactive vacuum deposition of CeO₂ on Cu(1 1 1) surface in oxygen atmosphere provides high quality epitaxial ceria overlayers. We report the growth characteristics of Ce oxide, the structures, and the temperature stability of the oxide phases as investigated by low-energy electron diffraction (LEED) and X-ray photoelectron spectroscopy. We find that Ce oxide on the Cu(1 1 1) grows initially in the form of islands giving sharp hexagonal LEED pattern of the CeO₂(1 1 1) structure corresponding to the (1.5 × 1.5) structure. The CeO₂-Cu(1 1 1) films exhibited mixed valence states and temperature dependent CeO₂-Ce₂O₃ transition above 900 K due to the vacuum annealing. The transition progressed more rapidly at the surface, probably by formation of oxygen vacancies.     

Sn interaction with the CeO2(1 1 1) system: Bimetallic bonding and ceria reduction

A tin layer 0.8 nm thick was deposited onto the CeO₂(1 1 1) surface by molecular beam deposition at a temperature of 520 K. The interaction of tin with cerium oxide (ceria) was investigated by X-ray photoelectron spectroscopy (XPS), ultra-violet photoelectron spectroscopy (UPS) and resonant photoelectron spectroscopy (RPES). The strong tin-ceria interaction led to the formation of a homogeneous bulk Ce-Sn-O mixed oxide system. The bulk compound formation is accompanied by partial Ce⁴⁺ → Ce³⁺ reduction, observed as a giant 4f resonance enhancement of the Ce³⁺ species. CeO₂ and SnO₂ oxides were formed after oxygen treatment at 520 K. The study proved the existence of strong Ce-Sn interaction and charge transfer from Sn to the Ce-O complex that lead to a weakening of the cerium-oxygen bond, and consequently, to the formation of oxygen deficient active sites on the ceria surface. This behavior can be a key for understanding the higher catalytic activity of the SnO_x/CeO_x mixed oxide catalysts as compared with the individual pure oxides.     

Compositional dependence of in-vitro bioactivity in sodium calcium borate glasses

Borate glasses with composition xCaO (100−x) B₂O₃ (20≤x≤50), where x is in mole percent) and 50CaO·45B₂O₃·5Na₂O have been prepared using conventional melt quench technique. Samples were submerged in simulating body fluid solution (SBF) at 37 °C for various periods of time. After storage the samples were analyzed in order to investigate if a surface layer of hydroxyl carbonate apatite layer (HCA layer/Ca-P layer) had formed. The analysis technique used included Fourier-Transform Infrared Spectroscopy (FTIR). The rate of HCA layer formation on the surface of exposed glass samples is determined by FTIR, percentage weight loss measurements of glass samples in SBF and variation of pH of SBF as a function of time. Increase in calcium content in the glass matrix has shown to decrease the rate of HCA formation on glass surfaces. The borate glass with x=20 has shown HCA layer formation on glass surface within two days of dipping. The bone like apatite formation of glass surface demonstrates the potential of glass for integration with bone.     

Sr2CeO4:Eu and Sr2CeO4:5 mol% Eu, 3 mol% Dy microphosphors: Wet chemistry synthesis from hybrid precursor and photoluminescence properties

In this article, Sr₂CeO₄:x mol% Eu³⁺ and Sr₂CeO₄:5 mol%Eu³⁺, 3 mol% Dy³⁺ phosphors were synthesized from assembling hybrid precursors by wet chemical method. As-prepared samples present uniform grain-like morphology and the particle size is about 0.2 μm. The luminescence spectra of Sr₂CeO₄:x mol% Eu³⁺ have been measured to examine the influence of the intensity of red emission lines for Eu³⁺ on the concentration of Eu³⁺, showing that the intensity of the red emission increases with an increase of the concentration from 1 to 5 mol%. Additionally, from the emission spectra of Sr₂CeO₄:5 mol%Eu³⁺, 3 mol% Dy³⁺ phosphors, the characteristic lines of Dy³⁺ have also been observed. This result indicates that there also exists an energy transfer process between Sr₂CeO₄ and Dy³⁺.     

Electronic structure and topography of annealed SrTiO3(1 1 1) surfaces studied with MIES and STM

Perovskites of ABO₃ type like strontium titanate (SrTiO₃) are of great practical concern as materials for oxygen sensors operating at high temperatures. It is well known that the surface layer shows different properties compared to the bulk. Numerous studies exist for the SrTiO₃(1 0 0) and (1 1 0) surfaces which have investigated the changes in the electronic structure and topography as a function of the preparation conditions. They have indicated a rather complex behaviour of the surface and the near surface region of SrTiO₃ at elevated temperatures. Up to now, the behaviour of the SrTiO₃(1 1 1) surfaces under thermal treatment is not sufficiently known. This contribution is intended to work out the relation between alteration of the surface topography with respect to the preparation conditions and the simultaneous changes of the electronic structure. We applied scanning tunneling microscopy (STM) to investigate the surface topography and, additionally, metastable impact electron spectroscopy (MIES) to study the surface electronic structure of reconstructed SrTiO₃(1 1 1) surfaces. The crystals were heated up to 1000 °C under reducing and oxidizing conditions. Both preparation conditions cause strong changes of the surface topography and electronic structure. A microfaceting of the topmost layers is found.     

Reactivity and XAFS study on (1−x)CeO2-xNiO (x=0.025-0.3) system in the two-step water-splitting reaction for solar H2 production

The redox reaction of Ce⁴⁺-Ce³⁺ promoted by the catalytic function of nickel ions in a (1−x)CeO₂-xNiO solid solution was investigated for solar H₂ production by the two-step water-splitting reaction. By irradiation using an infrared imaging lamp as a solar simulator, the O₂-releasing reaction with (1−x)CeO₂-xNiO solid solution proceeded at 1673-1873 K, and its reduced form was produced. The amounts of H₂ gas evolved by the reduced form were 1.2-2.5 cm³/g and the evolved gases amounts ratio of H₂/O₂ was nearly 2, which is equal to the stoichiometric value of the water-splitting reaction (H₂O=H₂+1/2O₂). The maximum amounts of evolved H₂ and O₂ gases were obtained at the Ce:Ni mole ratio of 0.95:0.05 (x=0.05) in the (1−x)CeO₂-xNiO system. The X-ray absorption fine structure (XAFS) measurement showed that the O₂-releasing and H₂-generation reactions with (1−x)CeO₂-xNiO solid solution were repeatable with the redox system of Ce⁴⁺-Ce³⁺, which was enhanced by the catalytic function of Ni²⁺-Ni⁰.     

Growth of oriented crystalline Ag nanoislands on air-exposed Si(0 0 1) surfaces

Growth of Ag islands under ultrahigh vacuum condition on air-exposed Si(0 0 1)-(2 × 1) surfaces has been investigated by in-situ reflection high energy electron diffraction (RHEED). A thin oxide is formed on Si via exposure of the clean Si(0 0 1)-(2 × 1) surface to air. Deposition of Ag on this oxidized surface was carried out at different substrate temperatures. Deposition at room temperature leads to the growth of randomly oriented Ag islands while well-oriented Ag islands, with (0 0 1)_Ag||(0 0 1)_Si, [1 1 0]_Ag||[1 1 0]_Si, have been found to grow at substrate temperatures of ≥350 °C in spite of the presence of the oxide layer between Ag islands and Si. The RHEED patterns show similarities with the case of Ag deposition on H-passivated Si(0 0 1) surfaces.     

Improving p-type contact characteristics by Ni-assisted annealing and effects on surface morphologic evolution of InGaN LED films grown on Si (1 1 1)

Ni thin layer was deposited to assist to activate p-GaN and then was removed. The process was named Ni-assisted annealing (NA). We investigate the surface morphology and p-type contact behaviors of InGaN LED films grown on Si (1 1 1) substrates. Compared with conventional thermal annealing (TA), NA can improve the p-type contact characteristic at lower anneal temperature and a smaller specific contact resistivity (ρ_c = 6.1 × 10⁻⁵ Ω cm²) employing nonalloy Pt electrode was obtained. A wet etching method using acid-hydrogen peroxide was adopted to boil films surface after activation. We found that some nano-pits appeared on surfaces while original surface step structure was still clearly visible, which shows a defect-selective etching characteristic. Otherwise, we demonstrated that the surface morphology could be affected by NA while independent to TA. Some mechanisms for experimental phenomena were also discussed in the letter.     

Ceria nanoformations in CO oxidation on Pt(1 1 1): Promotional effects and reversible redox behaviour

A well-defined CeO_x/Pt(1 1 1) model catalytic system has been fabricated using the self-assembling of Ce adatoms on a Pt(1 1 1) surface with a subsequent oxidation of the nucleating Ce submonolayer (0.3 ML). The resulting system of the “inverse supported catalyst” type consists of CeO_x nanoformations (2D islands of 5-15 nm size and ∼0.3 nm in height) more or less uniformly distributed over the Pt(1 1 1) surface. This CeO_x/Pt(1 1 1) system has been tested in the CO oxidation reaction where both the CO₂ production rate and the Ce oxidation state were monitored in situ. An enhanced reactivity and a remarkable shift of the bistable region of the reaction towards higher CO pressures were observed when compared to a clean Pt(1 1 1) surface. The CeO_x islands exhibit a pronounced redox behaviour that follows the hysteresis cycle of the reaction. The usefulness of such a type of the “inverse model catalyst” for studying the oxygen diffusion supply and the redox behaviour of ceria in the ceria-platinum catalysts is demonstrated.     

Effect of substrate temperature and annealing temperature on the structural, electrical and microstructural properties of thin Pt films by rf magnetron sputtering

Influence of both substrate temperature, T_s, and annealing temperature, T_a, on the structural, electrical and microstructural properties of sputtered deposited Pt thin films have been investigated. X-ray diffraction results show that as deposited Pt films (T_s = 300, 400 °C) are preferentially oriented along (1 1 1) direction. A little growth both along (2 0 0) and (3 1 1) directions are also noticed in the as deposited Pt films. After annealing in air (T_a = 500-700 °C), films become strongly oriented along (1 1 1) plane. With annealing temperature, average crystallite size, D, of the Pt films increases and micro-strain, e, and lattice constant, a₀, decreases. Residual strain observed in the as deposited Pt films is found to be compressive in nature while that in the annealed films is tensile. This change in the strain from compressive to tensile upon annealing is explained in the light of mismatch between the thermal expansion coefficients of the film material and substrate. Room temperature resistivity of Pt films is dependant on both the T_s and T_a of the films. Observed decrease in the film resistivity with T_a is discussed in terms of annihilation of film defects and grain-boundary. Scanning electron microscopic study reveals that as the annealing temperature increases film densification improves. But at an annealing temperature of ∼600 °C, pinholes appear on the film surface and the size of pinhole increases with further increase in the annealing temperature. From X-ray photoelectron spectroscopic analysis, existence of a thin layer of chemisorbed atomic oxygen is detected on the surfaces of the as deposited Pt films. Upon annealing, coverage of this surface oxygen increases.     

Structure and stability of β-Mo2C bulk and surfaces: A density functional theory study

Density functional theory calculations have been performed on the structure and stability of β-Mo₂C bulk and the corresponding low-index surfaces. The eclipse configuration with a Mo-C-Mo-C stacking is the most stable, followed by the structure with a Mo-C-Mo-Mo-C stacking where there is an empty carbon layer every fourth layer. For (0 0 1) and (1 0 0) surfaces, the pure C terminations are more stable than the pure Mo terminations. For (0 1 0) and (1 1 1) surfaces, the Mo terminations are more stable than the C terminations. For the (0 1 1) surface, the mixed Mo/C termination is a little more stable than the Mo termination. Relaxation of these surfaces is moderate with no relaxation degree exceeding 12.8%. Among these surfaces, the mixed Mo/C termination of the (0 1 1) surface is the most stable with the lowest surface free energy, followed by the (1 0 1) surface and the T_Mo-2 termination of the (0 1 0) surface.